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Vishay Siliconix SISS40DN-T1-GE3
- Part No.:
- SISS40DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8S
- Datasheet:
-
SISS40DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 100V 36.5A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,491
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Product details
Overview
SISS40DN-T1-GE3 from Vishay Siliconix is an N-channel 100 V (D-S) MOSFET in a PowerPAK 1212-8S package, optimized for high-efficiency power conversion with RDS(on) = 0.0210 Ω at VGS = 10 V, Qg = 16 nC (typ.), and 36.5 A continuous drain current at TC = 25 °C. It serves as a primary-side switch or synchronous rectifier in DC/DC converters and inverters.
For engineers reviewing the SISS40DN-T1-GE3 datasheet, SISS40DN-T1-GE3 pinout, SISS40DN-T1-GE3 application, or SISS40DN-T1-GE3 equivalent, this page delivers verified electrical parameters, thermal performance data, gate charge behavior, body diode characteristics, and validated alternative options for high-frequency switching designs requiring low conduction and switching losses.
Technical Context
This MOSFET employs ThunderFET® technology to balance RDS(on), total gate charge (Qg), output charge (Qoss), and switching charge (Qsw). Its 100 V VDS rating supports industrial and telecom DC/DC topologies operating up to 48 V input rails with margin.
It features 100 % Rg and UIS tested units, guaranteed gate-source threshold voltage (VGS(th)) of 2.3–3.5 V, and a body diode with trr = 39–75 ns and Qrr = 49–95 nC - enabling fast recovery in synchronous rectification without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports 48 V bus systems with 2× safety margin against transients |
| RDS(on) max | 0.0210 Ω @ VGS = 10 V - enables ≤0.78 W conduction loss at 28 A RMS in 12 V output stage |
| ID cont. | 36.5 A @ TC = 25 °C - suitable for high-current primary switches in 200–500 W isolated converters |
| Qg typ. | 16 nC @ VDS = 50 V - reduces gate drive power and enables >500 kHz operation with standard 1-A drivers |
| Ciss | 845 pF - low input capacitance minimizes Miller-induced shoot-through risk in half-bridge configurations |
| RthJC max | 2.4 °C/W - allows ≥40 W dissipation with modest heatsinking on PCB copper area |
| VSD | 0.8–1.2 V @ IS = 4 A - low forward drop improves light-load efficiency in synchronous rectifier mode |
Pinout & Package
SISS40DN-T1-GE3 uses the leadless PowerPAK 1212-8S package (3.3 mm × 3.3 mm × 0.75 mm), with exposed drain pads on the bottom side for enhanced thermal conduction. The top-side terminals are arranged in an 8-pin dual-row configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source connections reduce source inductance and improve current sharing in high-di/dt switching |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals connect directly to internal die drains and PCB thermal pad for minimal RthJC |
| G (center pad, bottom) | Gate (G) | Single gate terminal located centrally beneath die; requires controlled solder mask opening for reliable gate routing |
Key Features
| Feature | Design Value |
|---|---|
| ThunderFET® optimization | Simultaneous minimization of RDS(on), Qg, Qoss, and Qsw - enables high-efficiency, high-frequency operation without trade-off penalties |
| 100 % Rg and UIS tested | Guaranteed gate resistance ≤1.5 Ω and ruggedness against unclamped inductive switching - eliminates need for external gate resistors or snubbers in most flyback designs |
| Low Qrr body diode | Qrr = 49–95 nC with trr = 39–75 ns - reduces reverse recovery loss and EMI in synchronous rectification below 200 kHz |
| Lead (Pb)-free & Halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709B - qualified for automotive and industrial applications requiring green compliance |
Applications
| Primary Side Switch | Synchronous Rectification |
|---|---|
Use Scenario: High-voltage primary switch in 65–100 kHz flyback or active-clamp forward converters delivering 100–300 W. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input to transformer; driven by PWM controller with 10 V gate drive. Use Value: Low RDS(on) (0.0210 Ω) and Qg (16 nC) minimize conduction and switching losses, improving full-load efficiency by ≥0.8 % over comparable 100 V MOSFETs. | Use Scenario: Secondary-side rectifier in isolated DC/DC converters (e.g., 12 V or 5 V outputs) replacing Schottky diodes. IC Role / Device Role / Timing Role: Synchronously gated N-channel switch replacing passive diode; driven by transformer-coupled or controller-synchronized signal. Use Value: Body diode VSD = 0.8–1.2 V and Qrr = 49–95 nC enable >95 % light-load efficiency and eliminate reverse recovery spikes seen with 40 V Schottkys. |
| DC/DC Conversion | Boost Converters |
Use Scenario: High-current buck or multiphase buck converter stage in server VRMs or telecom POL modules. IC Role / Device Role / Timing Role: Low-side switch in synchronous buck topology; switched at 300–600 kHz with 10 V gate drive. Use Value: RthJC = 2.4 °C/W and 36.5 A rating allow direct mounting on 2-oz copper thermal pads, supporting ≥35 A continuous current without external heatsink. | Use Scenario: Boost switch in PFC front-end or battery charging circuits stepping 12–48 V input to 300–400 V bus. IC Role / Device Role / Timing Role: High-side boost switch handling peak currents up to 60 A (IDM); operated at 65–135 kHz. Use Value: Avalanche-rated (EAS = 20 mJ) and 100 % UIS tested - withstands inductive kickback during overload or startup without failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF540NPBF | RDS(on) = 0.044 Ω @ 10 V; Qg = 71 nC; TO-220 package | Higher conduction loss and gate drive demand; unsuitable for >200 kHz due to higher Ciss (1,300 pF) | Prefer SISS40DN-T1-GE3 where board space, thermal density, or switching frequency exceed TO-220 limits. |
| DMN10H110LK-7 | RDS(on) = 0.0195 Ω @ 10 V; Qg = 13.5 nC; same PowerPAK 1212-8S footprint | Nearly identical specs but lower VGS(th) (1.2–2.2 V) increases risk of spurious turn-on in noisy environments | SISS40DN-T1-GE3 offers tighter VGS(th) control (2.3–3.5 V) for robust gate drive margin in industrial SMPS. |
Compared with IRF540NPBF and DMN10H110LK-7, SISS40DN-T1-GE3 delivers superior thermal performance (RthJC = 2.4 °C/W vs. 62 °C/W for TO-220), higher current density per mm², and ThunderFET-optimized charge trade-offs - making it preferred for compact, high-frequency, thermally constrained DC/DC stages.
Availability
SISS40DN-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC conversion, synchronous rectification, and boost converter applications requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.
Supply support for SISS40DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power components.
The SiSS40DN product line targets high-frequency, high-density power conversion in telecom, server, and industrial SMPS - engineered for low RDS(on)/Qg ratio and robust avalanche capability without sacrificing manufacturability.
FAQ
What is the maximum continuous drain current for SISS40DN-T1-GE3 at 70 °C case temperature?
The maximum continuous drain current for SISS40DN-T1-GE3 is 29 A at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK 1212-8S package under sustained power dissipation. Engineers must verify PCB copper area and airflow to sustain this current in actual SISS40DN-T1-GE3 implementations.
Does SISS40DN-T1-GE3 have avalanche capability, and is it production-tested?
Yes, SISS40DN-T1-GE3 is rated for single-pulse avalanche energy (EAS) of 20 mJ and single-pulse avalanche current (IAS) of 20 A, with 100 % UIS (unclamped inductive switching) testing performed on every unit. This ensures robustness against inductive transients in flyback and resonant converter topologies using SISS40DN-T1-GE3 as the main switch.
What is the gate-source threshold voltage range for SISS40DN-T1-GE3, and how does it affect drive design?
The gate-source threshold voltage (VGS(th)) for SISS40DN-T1-GE3 is 2.3–3.5 V at ID = 250 µA. This tight range ensures predictable turn-on behavior across temperature and process variation, allowing reliable operation with 5 V logic-level gate drivers while maintaining noise immunity - critical for stable SISS40DN-T1-GE3 switching in noisy industrial environments.
Can SISS40DN-T1-GE3 be used in synchronous rectification without an external Schottky diode?
Yes, SISS40DN-T1-GE3 can replace Schottky diodes in synchronous rectification due to its low body diode forward voltage (VSD = 0.8–1.2 V at IS = 4 A) and fast reverse recovery (trr = 39–75 ns). Its integrated body diode eliminates need for external diodes in most 12–48 V output converters, reducing BOM count and layout area for SISS40DN-T1-GE3-based designs.
What is the thermal resistance from junction to case (RthJC) for SISS40DN-T1-GE3, and how is it measured?
The maximum junction-to-case thermal resistance (RthJC) for SISS40DN-T1-GE3 is 2.4 °C/W under steady-state conditions, measured from the silicon junction to the exposed drain pad on the bottom of the PowerPAK 1212-8S package. This value assumes proper soldering to a 1" × 1" FR4 board with 2-oz copper - essential for accurate thermal modeling of SISS40DN-T1-GE3 in high-power applications.
SISS40DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- ThunderFET®
- Package/Case:
- PowerPAK® 1212-8S
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 36.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 21mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 24 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 845 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 52W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8S
SISS40DN-T1-GE3 FAQ
1.How can I place an order for SISS40DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SISS40DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SISS40DN-T1-GE3 reliable?
The price and inventory of SISS40DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS40DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SISS40DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS40DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SISS40DN-T1-GE3?
SISS40DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SISS40DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SISS40DN-T1-GE3?
For technical support, including SISS40DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS40DN-T1-GE3 requirements.
6.How does Aetrix verify that SISS40DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SISS40DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS40DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SISS40DN-T1-GE3?
All SISS40DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS40DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SISS40DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SISS40DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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