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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISS42DN-T1-GE3

Name: SISS42DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS42DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISS42DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8S

Datasheet:: SISS42DN-T1-GE3.pdf

Description:: MOSFET N-CH 100V 11.8/40.5A PPAK

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Product details

Overview

SISS42DN-T1-GE3 from Vishay Siliconix is an N-channel 100 V, 40.5 A (T_C = 25 °C) TrenchFET® Gen IV power MOSFET in a PowerPAK® 1212-8S package, featuring R_DS(on) = 14.4 mΩ @ V_GS = 10 V, Q_g = 18.9 nC (typ.), and R_DS(on)–Q_oss FOM optimized for high-efficiency DC/DC converters and synchronous rectification.

For engineers reviewing the SISS42DN-T1-GE3 datasheet, SISS42DN-T1-GE3 pinout, SISS42DN-T1-GE3 application, or SISS42DN-T1-GE3 equivalent, this device is selected for high-frequency switching topologies requiring low conduction and switching losses, robust avalanche capability (E_AS = 11.2 mJ), and thermally efficient leadless packaging in space-constrained industrial and solar microinverter designs.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to achieve a low R_DS(on)–Q_oss figure-of-merit, enabling reduced switching losses in hard-switched and resonant converter stages. Its gate threshold voltage (V_GS(th) = 2.0–3.4 V) supports standard 5 V and 10 V gate drive, while its 100 % R_g and UIS testing ensures production reliability under transient stress.

The PowerPAK 1212-8S package delivers low R_thJC = 1.7 °C/W (typ.) and integrates drain-source body diode with t_rr = 47 ns (typ.) and Q_rr = 100 nC (typ.), making it suitable for synchronous rectifier operation where fast, low-loss reverse recovery is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Withstands up to 100 V drain-source blocking voltage, suitable for 48 V input bus and 100 V-class primary-side switch applications.
R_DS(on) max @ V_GS = 10 V	14.4 mΩ - Enables ≤ 6 W conduction loss at 20 A continuous drain current, reducing thermal load in high-current power stages.
Q_g typ.	18.9 nC - Low gate charge minimizes driver power and propagation delay, supporting >1 MHz switching in GaN-compatible half-bridge layouts.
I_D continuous @ T_C = 25 °C	40.5 A - Rated for high-current output stages without external heatsink when mounted on ≥1" × 1" FR4 PCB with 2 oz copper.
E_AS	11.2 mJ - Guaranteed single-pulse avalanche energy supports robustness against inductive switching transients in motor drive and DC/DC flyback circuits.
R_thJC max	2.2 °C/W - Enables direct thermal coupling to PCB copper or heatsink, supporting high-power density designs with junction temperature control.
V_SD @ I_S = 5 A	0.77–1.1 V - Low forward voltage of integrated body diode reduces reverse-recovery losses in synchronous rectifier mode.

Pinout & Package

SISS42DN-T1-GE3 uses the leadless PowerPAK® 1212-8S package (3.3 mm × 3.3 mm footprint), with exposed drain pads on the bottom side for thermal and electrical connection. The top-side marking includes polarity dot for Pin 1 identification.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
5, 6, 7, 8	Drain (D)	Four exposed drain terminals on bottom side provide low-inductance, high-current path to PCB ground plane or heatsink.
Gate (G)	Control terminal	Single top-side gate pad enables compact gate loop layout; R_g = 0.3–1.5 Ω (typ./max) supports stable gate drive without external damping.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers industry-leading R_DS(on)–Q_oss FOM for minimized total switching loss in high-frequency SMPS.
100 % R_g and UIS tested	Ensures gate resistance consistency and ruggedness against unclamped inductive switching events in real-world motor and converter loads.
PowerPAK 1212-8S package	Provides 4× drain and 4× source terminals for ultra-low package inductance (<0.5 nH) and enhanced thermal dissipation via bottom-side copper exposure.
Low V_GS(th) range (2.0–3.4 V)	Enables reliable turn-on with 3.3 V or 5 V logic-level gate drivers, eliminating need for level-shifting in many isolated controller interfaces.
Body diode t_rr = 47 ns (typ.)	Reduces reverse recovery charge (Q_rr = 100 nC) and associated switching loss during freewheeling, improving efficiency in synchronous rectifier applications.

Applications

Synchronous Rectifier	Primary-Side Switch
Use Scenario: Secondary-side rectification in isolated DC/DC converters (e.g., LLC, phase-shifted full-bridge) operating at 300–1000 kHz. IC Role / Device Role / Timing Role: High-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve light-load efficiency. Use Value: 14.4 mΩ R_DS(on) and 47 ns body diode t_rr cut conduction and recovery losses by >30 % vs. 40 V Schottky in 12 V output rails.	Use Scenario: Primary-side switching element in 48 V–100 V input DC/DC converters for telecom and server power supplies. IC Role / Device Role / Timing Role: Main power switch in hard-switched or quasi-resonant topologies requiring high dV/dt immunity and avalanche robustness. Use Value: 100 V V_DS, 11.2 mJ E_AS, and 18.9 nC Q_g enable stable 500 kHz operation with <1.5 W switching loss at 10 A.
Solar Microinverter	Motor Drive Switch
Use Scenario: DC link switching and H-bridge leg in single-phase string or module-level solar inverters (≤1 kW). IC Role / Device Role / Timing Role: High-efficiency, thermally robust switch handling bidirectional current and partial shading transients. Use Value: 40.5 A I_D rating and -55 to +150 °C T_J range support outdoor deployment with minimal derating under ambient >65 °C.	Use Scenario: Half-bridge leg in 24–48 V BLDC motor drives for industrial automation and e-mobility subsystems. IC Role / Device Role / Timing Role: Low-R_DS(on) switching element managing PWM commutation at 20–50 kHz with fast body diode recovery. Use Value: 0.77 V V_SD and 100 nC Q_rr minimize shoot-through risk and freewheeling loss during dead-time transitions.

Synchronous Rectifier

Primary-Side Switch

Use Scenario: Secondary-side rectification in isolated DC/DC converters (e.g., LLC, phase-shifted full-bridge) operating at 300–1000 kHz.

IC Role / Device Role / Timing Role: High-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve light-load efficiency.

Use Value: 14.4 mΩ R_DS(on) and 47 ns body diode t_rr cut conduction and recovery losses by >30 % vs. 40 V Schottky in 12 V output rails.

Use Scenario: Primary-side switching element in 48 V–100 V input DC/DC converters for telecom and server power supplies.

IC Role / Device Role / Timing Role: Main power switch in hard-switched or quasi-resonant topologies requiring high dV/dt immunity and avalanche robustness.

Use Value: 100 V V_DS, 11.2 mJ E_AS, and 18.9 nC Q_g enable stable 500 kHz operation with <1.5 W switching loss at 10 A.

Solar Microinverter

Motor Drive Switch

Use Scenario: DC link switching and H-bridge leg in single-phase string or module-level solar inverters (≤1 kW).

IC Role / Device Role / Timing Role: High-efficiency, thermally robust switch handling bidirectional current and partial shading transients.

Use Value: 40.5 A I_D rating and -55 to +150 °C T_J range support outdoor deployment with minimal derating under ambient >65 °C.

Use Scenario: Half-bridge leg in 24–48 V BLDC motor drives for industrial automation and e-mobility subsystems.

IC Role / Device Role / Timing Role: Low-R_DS(on) switching element managing PWM commutation at 20–50 kHz with fast body diode recovery.

Use Value: 0.77 V V_SD and 100 nC Q_rr minimize shoot-through risk and freewheeling loss during dead-time transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 15.5 mΩ @ 10 V; Q_g = 22 nC; TO-252 package; higher R_thJA (62 °C/W)	Larger footprint, lower current density, less suitable for >500 kHz or space-constrained layouts	Prefer SISS42DN-T1-GE3 for high-frequency, high-power-density designs; IRF7470PBF fits legacy TO-252 footprints with relaxed thermal constraints.
DMTH10H015LPS-13	R_DS(on) = 15.0 mΩ @ 10 V; Q_g = 20.5 nC; PowerDI 5060 package; no 100 % UIS test	Lower avalanche rating (E_AS = 7.5 mJ); not rated for primary-side switch in high-energy flyback	Choose SISS42DN-T1-GE3 when guaranteed UIS performance and 11.2 mJ E_AS are required for motor or inverter reliability.

Compared with IRF7470PBF and DMTH10H015LPS-13, SISS42DN-T1-GE3 offers superior R_DS(on)–Q_oss FOM, lower R_thJC, and production-tested UIS robustness-making it the preferred choice for high-efficiency, high-reliability 100 V switching in thermally demanding, high-frequency applications.

Availability

SISS42DN-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, primary-side DC/DC switching, and solar microinverter applications requiring stable component supply, consistent parametric performance across production lots, and long-term industrial lifecycle support.

Supply support for SISS42DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency silicon solutions.

The SISS42DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET product line, engineered specifically for high-frequency, high-efficiency power conversion in industrial, renewable energy, and motor control systems where low R_DS(on)–Q_oss FOM and robust avalanche performance are critical.

FAQ

What is the maximum continuous drain current rating for SISS42DN-T1-GE3 at T_C = 70 °C?

The SISS42DN-T1-GE3 has a maximum continuous drain current (I_D) rating of 32.4 A at case temperature T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limits under sustained high-power operation and must be validated against actual PCB layout, copper area, and airflow conditions in the target application.

Does SISS42DN-T1-GE3 support logic-level gate drive?

Yes, SISS42DN-T1-GE3 supports logic-level gate drive with a gate threshold voltage (V_GS(th)) range of 2.0–3.4 V at I_D = 250 μA. It achieves full enhancement and low R_DS(on) at V_GS = 5 V (R_DS(on) = 0.0170 Ω max @ 7.5 V), making it compatible with 3.3 V and 5 V microcontroller or gate driver outputs without level shifting.

What is the body diode reverse recovery time (t_rr) of SISS42DN-T1-GE3, and why does it matter?

The SISS42DN-T1-GE3 body diode reverse recovery time is 47 ns (typ.) at I_F = 10 A, di/dt = 100 A/μs, and T_J = 25 °C. This fast t_rr minimizes reverse recovery current spikes and associated switching loss during synchronous rectification, directly improving efficiency and reducing EMI in high-frequency DC/DC converters.

Is SISS42DN-T1-GE3 suitable for avalanche-rated applications like motor drives?

Yes, SISS42DN-T1-GE3 is 100 % UIS (unclamped inductive switching) tested and rated for single-pulse avalanche energy E_AS = 11.2 mJ at T_J = 25 °C. This makes it suitable for motor drive H-bridge legs and other inductive load switching applications where voltage overshoot during turn-off must be safely absorbed within the MOSFET.

What is the thermal resistance from junction to case (R_thJC) for SISS42DN-T1-GE3?

The SISS42DN-T1-GE3 has a typical junction-to-case thermal resistance (R_thJC) of 1.7 °C/W and a maximum of 2.2 °C/W, measured from junction to the exposed drain paddle. This low value enables efficient heat transfer to the PCB or external heatsink, supporting high-power operation in compact PowerPAK 1212-8S layouts without additional thermal interface materials.

SISS42DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® 1212-8S

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 11.8A (Ta), 40.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 14.4mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1850 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 4.8W (Ta), 57W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8S

SISS42DN-T1-GE3 FAQ

1.How can I place an order for SISS42DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISS42DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISS42DN-T1-GE3 reliable?

The price and inventory of SISS42DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS42DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISS42DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS42DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISS42DN-T1-GE3?

SISS42DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISS42DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISS42DN-T1-GE3?

For technical support, including SISS42DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS42DN-T1-GE3 requirements.

6.How does Aetrix verify that SISS42DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISS42DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS42DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISS42DN-T1-GE3?

All SISS42DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS42DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISS42DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISS42DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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