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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISS4402DN-T1-GE3

Name: SISS4402DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS4402DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISS4402DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8S

Datasheet:: SISS4402DN-T1-GE3.pdf

Description:: N-CHANNEL 40 V (D-S) MOSFET POWE

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Product details

Overview

SISS4402DN-T1-GE3 from Vishay Siliconix is an N-channel 40 V TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8S package, delivering R_DS(on) = 2.2 mΩ at V_GS = 10 V and 3.2 mΩ at V_GS = 4.5 V, with 128 A continuous drain current (T_C = 25 °C), optimized for high-efficiency synchronous rectification and DC/DC conversion.

For engineers reviewing the SISS4402DN-T1-GE3 datasheet, SISS4402DN-T1-GE3 pinout, SISS4402DN-T1-GE3 application, or SISS4402DN-T1-GE3 equivalent, key selection criteria include low gate charge (Q_g = 21.5 nC typ. at 4.5 V), ultra-low output capacitance (Q_oss = 24.5 nC), and robust 100% R_g and UIS testing for reliable high-frequency switching in compact power stages.

Technical Context

This MOSFET employs a trench-based silicon structure with optimized gate-drain charge ratio (Q_gd/Q_gs) to minimize switching losses in hard-switched topologies. Its low R_DS(on) and high current rating support high-density buck converter designs operating up to 1 MHz.

The device features a thermally enhanced PowerPAK 1212-8S leadless package with exposed drain copper on the bottom side, achieving R_thJC = 1.5 °C/W (typ.) and enabling efficient heat transfer to PCB copper planes without requiring external heatsinks in many applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage; suitable for 12 V and 24 V input bus systems with margin.
R_DS(on) @ 10 V	2.2 mΩ max - Enables <1 W conduction loss at 70 A, critical for high-current synchronous rectifiers.
R_DS(on) @ 4.5 V	3.2 mΩ max - Ensures strong enhancement-mode turn-on with standard logic-level gate drivers.
Q_g @ 4.5 V	21.5 nC typ. - Reduces gate drive power and enables fast switching with minimal driver stress.
I_D (continuous)	128 A @ T_C = 25 °C - Supports high-current power delivery in server VRMs and telecom DC/DC modules.
Q_oss	24.5 nC - Low output charge minimizes turn-off energy loss and improves light-load efficiency.
R_thJC	1.5 °C/W typ. - Allows direct thermal coupling to PCB ground plane for effective junction temperature control.

Pinout & Package

SISS4402DN-T1-GE3 uses the PowerPAK® 1212-8S surface-mount package: 3.3 mm × 3.3 mm footprint, 0.75 mm nominal height, leadless construction with exposed drain copper on the bottom side for thermal and electrical performance. Pin 1 is marked by a dot in the top-left corner.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt operation.
5, 6, 7, 8	Drain (D)	Four parallel drain terminals connect to exposed bottom-side copper pad for low-inductance, high-current path and thermal conduction.
G	Gate (G)	Single gate terminal located at top edge; optimized layout minimizes gate loop inductance for stable high-speed switching.

Key Features

Feature	Design Value
TrenchFET® Gen IV process	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for reduced total switching + conduction losses.
100% R_g tested	Ensures consistent gate resistance across production lots, critical for predictable gate drive timing and EMI behavior.
100% UIS tested	Validates ruggedness under unclamped inductive switching stress-essential for reliability in synchronous buck converters.
Optimized Q_gd/Q_gs ratio	Minimizes Miller plateau duration and dv/dt-induced false turn-on risk in high-side configurations.
Lead (Pb)-free and halogen-free	Meets RoHS Directive 2011/65/EU and JEDEC JS709C requirements for environmentally compliant manufacturing.

Applications

Synchronous Rectifier in Isolated DC/DC	High-Density Synchronous Buck Converter
Use Scenario: Secondary-side rectification in 48 V–12 V isolated telecom or server DC/DC converters operating at 300–600 kHz. IC Role / Device Role / Timing Role: Low-loss synchronous rectifier replacing Schottky diode; driven by controller's complementary gate signal with precise timing alignment. Use Value: Achieves >97% efficiency at full load by eliminating 0.4–0.7 V forward drop, reducing heat generation and enabling smaller heatsinks.	Use Scenario: High-current (≥60 A) point-of-load regulator in AI accelerators or GPU power delivery, using multiphase interleaved topology. IC Role / Device Role / Timing Role: High-side or low-side switch in 500 kHz–1 MHz buck stage; leverages low Q_g and Q_oss for minimal switching loss. Use Value: Enables 1.5× higher power density vs. legacy MOSFETs due to 2.2 mΩ R_DS(on) and 21.5 nC Q_g, reducing board area and thermal mass.
Load Switch for 12 V/24 V Systems	Hot-Swap and OR-ing Circuit
Use Scenario: Inrush-controlled power rail enable in industrial PLC I/O modules or automotive body control units. IC Role / Device Role / Timing Role: Single N-channel load switch with external gate resistor and RC network for soft-start; handles 128 A peak surge. Use Value: Eliminates need for discrete current-limiting ICs; integrated low R_DS(on) reduces voltage drop and self-heating during sustained 50–100 A loads.	Use Scenario: Redundant 12 V power supply OR-ing in data center power shelves or telecom base stations. IC Role / Device Role / Timing Role: Back-to-back configured MOSFET acting as ideal diode; body diode forward voltage minimized via low V_SD (0.73 V typ.). Use Value: Reduces forward voltage drop by >60% vs. Schottky diodes, cutting conduction loss and improving system efficiency at 40–80 A per rail.

Synchronous Rectifier in Isolated DC/DC

High-Density Synchronous Buck Converter

Use Scenario: Secondary-side rectification in 48 V–12 V isolated telecom or server DC/DC converters operating at 300–600 kHz.

IC Role / Device Role / Timing Role: Low-loss synchronous rectifier replacing Schottky diode; driven by controller's complementary gate signal with precise timing alignment.

Use Value: Achieves >97% efficiency at full load by eliminating 0.4–0.7 V forward drop, reducing heat generation and enabling smaller heatsinks.

Use Scenario: High-current (≥60 A) point-of-load regulator in AI accelerators or GPU power delivery, using multiphase interleaved topology.

IC Role / Device Role / Timing Role: High-side or low-side switch in 500 kHz–1 MHz buck stage; leverages low Q_g and Q_oss for minimal switching loss.

Use Value: Enables 1.5× higher power density vs. legacy MOSFETs due to 2.2 mΩ R_DS(on) and 21.5 nC Q_g, reducing board area and thermal mass.

Load Switch for 12 V/24 V Systems

Hot-Swap and OR-ing Circuit

Use Scenario: Inrush-controlled power rail enable in industrial PLC I/O modules or automotive body control units.

IC Role / Device Role / Timing Role: Single N-channel load switch with external gate resistor and RC network for soft-start; handles 128 A peak surge.

Use Value: Eliminates need for discrete current-limiting ICs; integrated low R_DS(on) reduces voltage drop and self-heating during sustained 50–100 A loads.

Use Scenario: Redundant 12 V power supply OR-ing in data center power shelves or telecom base stations.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET acting as ideal diode; body diode forward voltage minimized via low V_SD (0.73 V typ.).

Use Value: Reduces forward voltage drop by >60% vs. Schottky diodes, cutting conduction loss and improving system efficiency at 40–80 A per rail.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 2.7 mΩ @ 4.5 V; Q_g = 24 nC; PowerSO-10 package (larger footprint, higher R_thJA)	Higher thermal resistance limits continuous current in compact layouts; less suited for >500 kHz switching.	Prefer SISS4402DN-T1-GE3 when board space, thermal performance, or switching frequency exceed 400 kHz.
DMTH4007LPSQ-13	R_DS(on) = 2.5 mΩ @ 4.5 V; Q_g = 27 nC; PowerDI 5060 package; AEC-Q101 qualified	Automotive-qualified but higher Q_g increases gate drive loss; larger package reduces power density.	Select SISS4402DN-T1-GE3 for non-automotive high-efficiency, high-density applications where qualification overhead is unnecessary.

Compared with IRLHS6342TRPBF and DMTH4007LPSQ-13, SISS4402DN-T1-GE3 offers the lowest R_DS(on) × Q_g product in its class, enabling superior efficiency in space-constrained, high-frequency DC/DC converters without automotive qualification overhead.

Availability

SISS4402DN-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, high-power-density DC/DC converters, and load switching applications requiring stable component supply, tight parametric consistency, and long-term manufacturability.

Supply support for SISS4402DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SISS4402DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-frequency, high-current DC/DC conversion in computing, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current rating for SISS4402DN-T1-GE3 at 70 °C case temperature?

The SISS4402DN-T1-GE3 supports 103 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK 1212-8S package and ensures safe operation under sustained high-power conditions without exceeding the 150 °C maximum junction temperature.

Does SISS4402DN-T1-GE3 require a gate resistor for stable operation in a 500 kHz synchronous buck converter?

Yes, SISS4402DN-T1-GE3 benefits from an external gate resistor (typically 1–5 Ω) to dampen ringing and control slew rate in 500 kHz operation. Its low gate resistance (R_g = 0.5–1.8 Ω) and 21.5 nC Q_g make it responsive but susceptible to oscillation without proper gate drive impedance matching-verified in Vishay's application notes for high-frequency buck stages.

Can SISS4402DN-T1-GE3 be used in a back-to-back configuration for OR-ing applications?

Yes, SISS4402DN-T1-GE3 is suitable for back-to-back OR-ing due to its low body diode forward voltage (V_SD = 0.73 V typ. at 5 A) and robust 100% UIS rating. When paired with a dedicated ideal diode controller, it delivers lower conduction loss than Schottky alternatives-confirmed in Vishay's AN958 application note on high-efficiency OR-ing circuits.

What is the thermal resistance from junction to ambient (R_thJA) for SISS4402DN-T1-GE3 on a standard 1" × 1" FR4 board?

On a 1" × 1" FR4 board, SISS4402DN-T1-GE3 has R_thJA = 20 °C/W (typical) and 25 °C/W (maximum), per the Thermal Resistance Ratings table. This value assumes standard 2 oz. copper and no additional heatsinking-critical for estimating junction temperature rise in thermally constrained PCB layouts.

Is SISS4402DN-T1-GE3 compatible with lead-free reflow soldering profiles?

Yes, SISS4402DN-T1-GE3 is rated for lead-free reflow with a peak temperature of 260 °C, as documented in the Absolute Maximum Ratings section. The PowerPAK 1212-8S package is qualified per J-STD-020, and Vishay recommends following the profile in document 73257 for optimal interconnect reliability and void minimization.

SISS4402DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8S

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 35.5A (Ta), 128A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 3850 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 65.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8S

SISS4402DN-T1-GE3 FAQ

1.How can I place an order for SISS4402DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISS4402DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISS4402DN-T1-GE3 reliable?

The price and inventory of SISS4402DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS4402DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISS4402DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS4402DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISS4402DN-T1-GE3?

SISS4402DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISS4402DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISS4402DN-T1-GE3?

For technical support, including SISS4402DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS4402DN-T1-GE3 requirements.

6.How does Aetrix verify that SISS4402DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISS4402DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS4402DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISS4402DN-T1-GE3?

All SISS4402DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS4402DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISS4402DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISS4402DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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