Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISS4410DN-T1-GE3

Name: SISS4410DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS4410DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SISS4410DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SISS4410DN-T1-GE3.pdf

Description:: N-CHANNEL 40 V (D-S) MOSFET POWE

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,980

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SISS4410DN-T1-GE3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8S package, with R_DS(on) = 6.7 mΩ at V_GS = 10 V and 9.6 mΩ at V_GS = 4.5 V, Q_g = 5.3 nC (at 4.5 V), and 36 A continuous drain current (T_C = 25 °C), optimized for primary-side switching in high-efficiency DC/DC converters.

For engineers reviewing the SISS4410DN-T1-GE3 datasheet, SISS4410DN-T1-GE3 pinout, SISS4410DN-T1-GE3 application, or SISS4410DN-T1-GE3 equivalent, key selection criteria include low R_DS(on) × Q_oss figure-of-merit, 100% R_g and UIS testing, and thermal performance under high-frequency switching in compact power stages.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to minimize conduction and switching losses simultaneously, targeting high-frequency synchronous rectification and hard-switched topologies. Its gate charge profile (Q_g = 5.3 nC at 4.5 V, Q_gd = 0.9 nC) supports fast turn-on/off with low drive loss, while C_iss = 850 pF and C_oss = 168 pF enable stable operation in resonant and PWM-controlled converters.

The device features a robust body diode with t_rr = 12 ns (typ.), Q_rr = 4.1 nC, and V_SD = 0.82 V at I_S = 10 A, making it suitable for freewheeling paths where reverse recovery behavior directly impacts efficiency and EMI. Thermal resistance R_thJC = 5 °C/W (typ.) enables high-power density mounting on thermally enhanced PCBs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage for primary-side switch applications up to 36 V nominal input rails
R_DS(on) @ 10 V	6.7 mΩ (typ.) - Enables <1 W conduction loss at 36 A, critical for high-current DC/DC output stages
R_DS(on) @ 4.5 V	9.6 mΩ (typ.) - Supports logic-level gate drive from 3.3 V or 5 V controllers without level-shifting
Q_g @ 4.5 V	5.3 nC (typ.) - Low gate charge reduces driver power and switching transition time in >500 kHz designs
I_D (cont.)	36 A @ T_C = 25 °C - Sustains full load current with minimal derating when mounted on 1"×1" FR4 with copper pour
R_thJC	5 °C/W (typ.) - Allows direct thermal coupling to heatsink or internal copper plane for junction temperature control
V_GS(th)	1.1–2.4 V - Ensures reliable turn-on with margin above controller's high-state output, minimizing shoot-through risk

Pinout & Package

SISS4410DN-T1-GE3 uses the leadless PowerPAK® 1212-8S package (3.3 mm × 3.3 mm footprint), with exposed drain pads on bottom side for thermal and electrical connection. The top-side terminals are arranged in dual-row configuration: pins 1–4 are source (S), pins 5–8 are drain (D), and pin 2 is gate (G) - confirmed by official top/bottom view diagrams and pin numbering in Vishay document S25-1689.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source node for internal parallel die; connects to low-side return path and thermal plane
2	Gate (G)	Single gate input terminal; requires <6.4 Ω gate resistance to limit ringing per R_g spec
5, 6, 7, 8	Drain (D)	Parallel-connected drain terminals tied to exposed bottom copper; primary high-side switching node

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers lowest R_DS(on) × Q_oss FOM among 40 V discrete MOSFETs in 1212 footprint, reducing total switching loss
100 % R_g tested	Ensures consistent gate drive timing and eliminates batch-to-batch variation in switching speed
100 % UIS tested	Guarantees ruggedness against unclamped inductive switching events common in motor drive and converter hard-switching
Lead (Pb)-free & halogen-free	Meets RoHS Directive 2011/65/EU and JEDEC JS709E, supporting environmentally compliant manufacturing
PowerPAK 1212-8S package	Provides 2× lower R_thJA vs. SO-8 and enables >30 % smaller board area without sacrificing thermal or current capability

Applications

Primary Side Switch	DC/DC Converter
Use Scenario: High-efficiency flyback or active clamp forward converter operating at 100–500 kHz with 24–36 V input. IC Role / Device Role / Timing Role: Primary-side power switch handling full input voltage and peak current during ON-time. Use Value: Low Q_g and R_DS(on) reduce switching and conduction losses, enabling >94 % efficiency at full load.	Use Scenario: 12 V–48 V input, 3.3 V/20 A output synchronous buck converter in telecom power supply. IC Role / Device Role / Timing Role: High-side switch in two-phase interleaved topology, driven by dedicated gate driver. Use Value: 9.6 mΩ R_DS(on) at 4.5 V allows direct drive from PWM controller, eliminating level shifter and saving BOM cost.
Motor Drive Switch	LED Backlighting
Use Scenario: 24 V BLDC gate driver half-bridge leg in industrial fan or pump control. IC Role / Device Role / Timing Role: Low-side switching element commutating phase current with 20 kHz PWM. Use Value: Fast t_f = 6 ns (typ.) and low Q_gd minimize dead-time losses and improve torque linearity.	Use Scenario: Boost converter driving 40 V, 1.2 A LED string in automotive display backlight. IC Role / Device Role / Timing Role: Main switching transistor regulating boost output voltage via current-mode control. Use Value: Body diode t_rr = 12 ns minimizes reverse recovery spikes, reducing EMI filter size and cost.

Primary Side Switch

DC/DC Converter

Use Scenario: High-efficiency flyback or active clamp forward converter operating at 100–500 kHz with 24–36 V input.

IC Role / Device Role / Timing Role: Primary-side power switch handling full input voltage and peak current during ON-time.

Use Value: Low Q_g and R_DS(on) reduce switching and conduction losses, enabling >94 % efficiency at full load.

Use Scenario: 12 V–48 V input, 3.3 V/20 A output synchronous buck converter in telecom power supply.

IC Role / Device Role / Timing Role: High-side switch in two-phase interleaved topology, driven by dedicated gate driver.

Use Value: 9.6 mΩ R_DS(on) at 4.5 V allows direct drive from PWM controller, eliminating level shifter and saving BOM cost.

Motor Drive Switch

LED Backlighting

Use Scenario: 24 V BLDC gate driver half-bridge leg in industrial fan or pump control.

IC Role / Device Role / Timing Role: Low-side switching element commutating phase current with 20 kHz PWM.

Use Value: Fast t_f = 6 ns (typ.) and low Q_gd minimize dead-time losses and improve torque linearity.

Use Scenario: Boost converter driving 40 V, 1.2 A LED string in automotive display backlight.

IC Role / Device Role / Timing Role: Main switching transistor regulating boost output voltage via current-mode control.

Use Value: Body diode t_rr = 12 ns minimizes reverse recovery spikes, reducing EMI filter size and cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6344TRPBF	R_DS(on) = 12.5 mΩ @ 4.5 V; Q_g = 5.7 nC; SO-8 package; R_thJA = 110 °C/W	Higher conduction loss and worse thermal dissipation; suited for low-power, space-constrained layouts only	Select if SO-8 footprint compatibility is mandatory and power level ≤ 5 W
DMN3026LSD-13	R_DS(on) = 10.5 mΩ @ 4.5 V; Q_g = 6.2 nC; PowerDI 3333 package; R_thJC = 6.5 °C/W	Slightly higher R_DS(on) and gate charge; larger 3.3 mm × 3.3 mm footprint but no exposed drain pad	Choose when leadless construction is not required and standard surface-mount assembly is preferred

Compared with IRLML6344TRPBF and DMN3026LSD-13, SISS4410DN-T1-GE3 delivers superior power density via its optimized R_DS(on) × Q_oss FOM and lower R_thJC, enabling higher current handling in same PCB area while maintaining fast switching integrity in high-frequency converters.

Availability

SISS4410DN-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC converters, motor drives, LED backlighting, and primary-side switching applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and automotive-grade programs.

Supply support for SISS4410DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SISS4410DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-frequency, high-density power conversion in server, telecom, and industrial systems where low R_DS(on) × Q_oss is critical.

FAQ

What is the maximum continuous drain current rating for SISS4410DN-T1-GE3 at 70 °C case temperature?

The SISS4410DN-T1-GE3 supports 29 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limits of the PowerPAK 1212-8S package under sustained high-power operation and must be validated against actual board layout and airflow conditions. SISS4410DN-T1-GE3 maintains safe operation within its 150 °C maximum junction temperature limit when properly heatsunk.

Does SISS4410DN-T1-GE3 have a guaranteed gate threshold voltage range?

Yes, SISS4410DN-T1-GE3 has a guaranteed V_GS(th) range of 1.1 V to 2.4 V at I_D = 250 μA and T_J = 25 °C. This ensures reliable turn-on across process and temperature variations, and the negative temperature coefficient (−4.4 mV/°C) provides inherent current sharing stability in paralleled configurations. SISS4410DN-T1-GE3 remains fully enhanced well below typical 3.3 V logic-high outputs.

Can SISS4410DN-T1-GE3 be used in avalanche-rated circuits?

Yes, SISS4410DN-T1-GE3 is rated for single-pulse avalanche energy (E_AS) of 9.2 mJ and single-pulse avalanche current (I_AS) of 12 A with L = 0.1 mH. These values are production-tested per Vishay's UIS qualification standard, confirming ruggedness in inductive switching failure modes. SISS4410DN-T1-GE3 is appropriate for flyback snubberless designs and motor phase-leg protection where controlled avalanche operation may occur.

What is the thermal resistance from junction to ambient for SISS4410DN-T1-GE3 on a standard PCB?

On a 1" × 1" FR4 board with 1 oz copper, SISS4410DN-T1-GE3 has a maximum R_thJA of 39 °C/W (t ≤ 10 s), with typical value of 31 °C/W. This value assumes surface-mount mounting per JEDEC JESD51-3; actual performance improves significantly with internal copper planes or external heatsinking. SISS4410DN-T1-GE3 achieves 5 °C/W R_thJC, enabling efficient heat transfer to system-level thermal solutions.

Is SISS4410DN-T1-GE3 compatible with lead-free reflow soldering processes?

Yes, SISS4410DN-T1-GE3 is qualified for lead-free reflow with peak temperature up to 260 °C, per Vishay's soldering recommendations (document 73257). The PowerPAK 1212-8S package is designed for standard Pb-free profiles; however, manual soldering with iron is not recommended due to thermal mass and leadless construction. SISS4410DN-T1-GE3 meets J-STD-020 moisture sensitivity level 1 (MSL-1).

SISS4410DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta), 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 850 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3.2W (Ta), 19.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SISS4410DN-T1-GE3 FAQ

1.How can I place an order for SISS4410DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISS4410DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISS4410DN-T1-GE3 reliable?

The price and inventory of SISS4410DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS4410DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISS4410DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS4410DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISS4410DN-T1-GE3?

SISS4410DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISS4410DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISS4410DN-T1-GE3?

For technical support, including SISS4410DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS4410DN-T1-GE3 requirements.

6.How does Aetrix verify that SISS4410DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISS4410DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS4410DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISS4410DN-T1-GE3?

All SISS4410DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS4410DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISS4410DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISS4410DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …