Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISS46DN-T1-GE3

Name: SISS46DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS46DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SISS46DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8S

Datasheet:: SISS46DN-T1-GE3.pdf

Description:: MOSFET N-CH 100V 12.5/45.3A PPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,918

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SISS46DN-T1-GE3 from Vishay Siliconix is an N-channel 100 V, 45.3 A TrenchFET® Gen IV power MOSFET in a PowerPAK® 1212-8S package, featuring R_DS(on) = 0.0128 Ω at V_GS = 10 V, Q_g = 21.5 nC (typ.), and optimized for low R_DS(on)–Q_oss figure-of-merit. It serves as a primary-side switch or synchronous rectifier in high-efficiency DC/DC converters.

For engineers reviewing the SISS46DN-T1-GE3 datasheet, SISS46DN-T1-GE3 pinout, SISS46DN-T1-GE3 application, or SISS46DN-T1-GE3 equivalent, key selection criteria include its 100 V V_DS, 45.3 A continuous drain current at T_C = 25 °C, 1.5 °C/W junction-to-case thermal resistance, and leadless PowerPAK 1212-8S footprint compatibility with high-density PCB layouts.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to achieve ultra-low gate charge and output charge trade-offs-Q_g = 21.5 nC and Q_oss = 28.9 nC at V_DS = 50 V-enabling high-frequency switching in hard-switched and resonant topologies. Its 100 % R_g and UIS tested construction ensures robustness in transient overload conditions.

The device operates with a gate threshold voltage of 2.0–3.4 V (V_GS(th)), supports ±20 V gate drive, and delivers g_fs = 50 S (typ.) at V_DS = 15 V, ID = 10 A-providing strong transconductance for precise gate control in closed-loop power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage; suitable for 48 V input bus and 100 V-class industrial and solar microinverter applications.
R_DS(on) max @ V_GS = 10 V	0.0128 Ω - Low conduction loss enabling <1.3 W I²R loss at 10 A, critical for thermally constrained DC/DC designs.
I_D continuous @ T_C = 25 °C	45.3 A - High current capability supports compact high-power density converter designs without external heatsinking.
Q_g typ.	21.5 nC - Enables efficient gate driving at >500 kHz switching frequencies with moderate gate driver strength (e.g., 2 A peak).
R_thJC max	1.9 °C/W - Low thermal resistance from junction to case allows direct mounting to copper planes or heatsinks for thermal management.
V_SD @ I_S = 5 A	0.77–1.1 V - Body diode forward voltage impacts reverse recovery losses in synchronous rectification; low V_SD reduces conduction loss during dead-time.
E_AS	20 mJ - Avalanche energy rating supports operation in inductive switching circuits without external snubbers under defined single-pulse conditions.

Pinout & Package

SISS46DN-T1-GE3 is housed in a surface-mount, leadless PowerPAK® 1212-8S package (3.3 mm × 3.3 mm, 0.75 mm height) with exposed drain copper on the bottom side for enhanced thermal performance and current handling.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
5, 6, 7, 8	Drain (D)	Four parallel drain terminals connect directly to internal die drains; bottom-side exposed copper serves as primary thermal and current path.
G (top-side pad)	Gate (G)	Single top-side gate pad enables standard reflow-compatible layout; requires controlled gate drive impedance to manage dV/dt-induced turn-on.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers industry-leading R_DS(on)–Q_g and R_DS(on)–Q_oss FOMs for improved efficiency in high-frequency SMPS.
100 % R_g and UIS tested	Ensures gate resistance consistency and ruggedness against unclamped inductive switching stress without derating.
PowerPAK 1212-8S package	Provides 3× lower R_thJC vs. SO-8, enabling higher power density and eliminating wirebond reliability concerns.
Low Q_gd/Q_g ratio	Q_gd = 4.2 nC / Q_g = 21.5 nC ≈ 20 % - Reduces Miller plateau duration and improves switching controllability.
Body diode t_rr = 40–80 ns	Enables reliable synchronous rectification in LLC and phase-shifted full-bridge converters with minimal reverse recovery loss.

Applications

Synchronous Rectification	Primary-Side Switch
Use Scenario: Used as secondary-side switch in isolated DC/DC converters (e.g., LLC, forward) to replace Schottky diodes. IC Role / Device Role / Timing Role: N-channel power MOSFET operating in synchronous rectifier mode, driven by transformer-coupled or controller-synchronized gate signals. Use Value: Reduces conduction loss by >40 % vs. 100 V Schottky diodes due to R_DS(on) = 0.0128 Ω, improving full-load efficiency by up to 1.2 %.	Use Scenario: High-side switch in non-isolated buck or isolated flyback/forward converters with 48–100 V input. IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer into transformer or inductor; rated for 100 V breakdown and 45.3 A continuous current. Use Value: Supports >300 W output in compact designs thanks to low R_DS(on) and 1.5 °C/W R_thJC, minimizing thermal margin constraints.
Solar Microinverter	Motor Drive Switch
Use Scenario: DC-link or H-bridge switch in single-phase string or module-level solar inverters operating up to 100 V DC input. IC Role / Device Role / Timing Role: High-efficiency, high-reliability N-channel MOSFET used in half-bridge legs; handles bidirectional current during MPPT and grid synchronization. Use Value: Low Q_oss = 28.9 nC minimizes turn-off loss during high-frequency PWM, extending inverter lifetime and reducing heatsink size.	Use Scenario: Half-bridge or 3-phase inverter leg switch in BLDC or stepper motor drivers for industrial automation and HVAC fans. IC Role / Device Role / Timing Role: Power switching element controlling motor phase current; operated with 10 V gate drive and fast switching (<30 ns rise/fall). Use Value: 100 % UIS tested capability withstands motor inductive kickback; low R_DS(on) limits I²R heating during stall or high-torque conditions.

Synchronous Rectification

Primary-Side Switch

Use Scenario: Used as secondary-side switch in isolated DC/DC converters (e.g., LLC, forward) to replace Schottky diodes.

IC Role / Device Role / Timing Role: N-channel power MOSFET operating in synchronous rectifier mode, driven by transformer-coupled or controller-synchronized gate signals.

Use Value: Reduces conduction loss by >40 % vs. 100 V Schottky diodes due to R_DS(on) = 0.0128 Ω, improving full-load efficiency by up to 1.2 %.

Use Scenario: High-side switch in non-isolated buck or isolated flyback/forward converters with 48–100 V input.

IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer into transformer or inductor; rated for 100 V breakdown and 45.3 A continuous current.

Use Value: Supports >300 W output in compact designs thanks to low R_DS(on) and 1.5 °C/W R_thJC, minimizing thermal margin constraints.

Solar Microinverter

Motor Drive Switch

Use Scenario: DC-link or H-bridge switch in single-phase string or module-level solar inverters operating up to 100 V DC input.

IC Role / Device Role / Timing Role: High-efficiency, high-reliability N-channel MOSFET used in half-bridge legs; handles bidirectional current during MPPT and grid synchronization.

Use Value: Low Q_oss = 28.9 nC minimizes turn-off loss during high-frequency PWM, extending inverter lifetime and reducing heatsink size.

Use Scenario: Half-bridge or 3-phase inverter leg switch in BLDC or stepper motor drivers for industrial automation and HVAC fans.

IC Role / Device Role / Timing Role: Power switching element controlling motor phase current; operated with 10 V gate drive and fast switching (<30 ns rise/fall).

Use Value: 100 % UIS tested capability withstands motor inductive kickback; low R_DS(on) limits I²R heating during stall or high-torque conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 0.014 Ω @ 10 V, Q_g = 25 nC, TO-252 package, R_thJC = 2.5 °C/W	Higher thermal resistance and larger footprint limit power density; less suitable for >300 kHz designs	Prefer SISS46DN-T1-GE3 where board space and thermal performance are critical.
DMTH10H015LPS-13	R_DS(on) = 0.015 Ω @ 10 V, Q_g = 23.5 nC, PowerDI 5060 package, R_thJC = 1.7 °C/W	Slightly higher R_DS(on) and Q_g; same leadless format but different pinout and thermal pad geometry	Acceptable alternative if layout accommodates PowerDI 5060; SISS46DN-T1-GE3 offers better FOM and avalanche rating.

Compared with IRF7470PBF and DMTH10H015LPS-13, SISS46DN-T1-GE3 delivers the lowest R_DS(on)–Q_oss FOM and tightest thermal resistance, making it optimal for high-frequency, high-power-density applications where efficiency and thermal headroom are design-critical.

Availability

SISS46DN-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC converters, solar microinverters, and motor drives requiring stable component supply, long-term manufacturability, and RoHS-compliant lead-free packaging.

Supply support for SISS46DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SISS46DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-frequency, high-efficiency switching in server power supplies, telecom rectifiers, and renewable energy systems.

FAQ

What is the maximum continuous drain current rating for SISS46DN-T1-GE3 at T_C = 70 °C?

The SISS46DN-T1-GE3 supports 36.2 A continuous drain current at case temperature T_C = 70 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the PowerPAK 1212-8S package's junction-to-case thermal resistance of 1.5–1.9 °C/W. Designers must ensure adequate PCB copper area or heatsinking to maintain T_C ≤ 70 °C when operating near this current level. The SISS46DN-T1-GE3 datasheet specifies this value under steady-state conditions with proper thermal management.

Does SISS46DN-T1-GE3 have avalanche capability, and how is it rated?

Yes, SISS46DN-T1-GE3 is rated for single-pulse avalanche energy E_AS = 20 mJ and single-pulse avalanche current I_AS = 20 A (L = 0.1 mH), as confirmed in its Absolute Maximum Ratings table. These values are validated through 100 % UIS (unclamped inductive switching) testing per JEDEC standards. The SISS46DN-T1-GE3 is not rated for repetitive avalanche operation; designers must avoid repeated exposure beyond these single-pulse limits to ensure long-term reliability.

What is the gate threshold voltage range for SISS46DN-T1-GE3, and how does it vary with temperature?

The SISS46DN-T1-GE3 has a gate threshold voltage V_GS(th) of 2.0–3.4 V at T_J = 25 °C and I_D = 250 μA, with a negative temperature coefficient of −7.1 mV/°C. As junction temperature rises, V_GS(th) decreases linearly-e.g., dropping ~0.7 V over a 100 °C rise-requiring gate drive designs that maintain sufficient overdrive margin across the full −55 to +150 °C operating range. This behavior is fully characterized in the SISS46DN-T1-GE3 datasheet's electrical specifications section.

Can SISS46DN-T1-GE3 be used in synchronous rectification with zero-voltage switching (ZVS)?

Yes, SISS46DN-T1-GE3 is well-suited for ZVS synchronous rectification due to its low Q_oss = 28.9 nC and fast body diode t_rr = 40–80 ns, which minimize reverse recovery losses and enable clean turn-on under resonant conditions. Its low R_DS(on) and optimized gate charge profile allow precise timing control in LLC and phase-shifted full-bridge topologies. The SISS46DN-T1-GE3 datasheet confirms these parameters under standard test conditions and recommends gate drive timing alignment to avoid shoot-through.

Is SISS46DN-T1-GE3 compatible with standard reflow soldering profiles, and what precautions apply?

Yes, SISS46DN-T1-GE3 is qualified for standard lead-free reflow per IPC/JEDEC J-STD-020, with peak temperature up to 260 °C. However, due to its PowerPAK 1212-8S leadless construction, manual soldering with an iron is not recommended. The exposed copper drain pad on the bottom side may not form a visible solder fillet, but adequate interconnection is ensured via bottom-side wetting. Reflow profile adherence-including ramp rates, soak time, and cooling slope-is critical; full details are in Vishay document 73257 referenced in the SISS46DN-T1-GE3 datasheet.

SISS46DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® 1212-8S

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 12.5A (Ta), 45.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 12.8mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 3.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2140 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 65.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8S

SISS46DN-T1-GE3 FAQ

1.How can I place an order for SISS46DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISS46DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISS46DN-T1-GE3 reliable?

The price and inventory of SISS46DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS46DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISS46DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS46DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISS46DN-T1-GE3?

SISS46DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISS46DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISS46DN-T1-GE3?

For technical support, including SISS46DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS46DN-T1-GE3 requirements.

6.How does Aetrix verify that SISS46DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISS46DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS46DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISS46DN-T1-GE3?

All SISS46DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS46DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISS46DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISS46DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …