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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISS5108DN-T1-GE3

Name: SISS5108DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS5108DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISS5108DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8S

Datasheet:: SISS5108DN-T1-GE3.pdf

Description:: N-CHANNEL 100-V (D-S) MOSFET POW

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Product details

Overview

SISS5108DN-T1-GE3 from Vishay Siliconix is an N-channel 100 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® 1212-8S package, with R_DS(on) = 0.0105 Ω at V_GS = 10 V, Q_g = 11.2 nC (typ.), and 55.9 A continuous drain current at T_C = 25 °C - optimized for high-efficiency synchronous rectification and primary-side switching in DC/DC converters.

For engineers reviewing the SISS5108DN-T1-GE3 datasheet, SISS5108DN-T1-GE3 pinout, SISS5108DN-T1-GE3 application, or SISS5108DN-T1-GE3 equivalent, key selection criteria include its low R_DS(on) × Q_oss figure-of-merit, 100% R_g and UIS tested reliability, and thermal performance with R_thJC = 1.5 °C/W (typ.) for high-power density designs.

Technical Context

This MOSFET employs TrenchFET® Gen V process technology to achieve a tuned balance between conduction loss (via ultra-low R_DS(on)) and switching loss (via minimized Q_oss and Q_gd). Its gate charge profile supports fast, efficient hard-switching operation with t_d(on) = 11 ns and t_f = 7 ns under standard test conditions.

The device features a robust body diode with V_SD = 0.77 V (typ.) at I_S = 5 A and t_rr = 40 ns (typ.), enabling reliable freewheeling in synchronous buck topologies. It is rated for 150 °C maximum junction temperature and qualified per JEDEC JESD47 stress testing standards.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports primary-side switching in 48 V input DC/DC and offline auxiliary supplies up to 80 V DC bus
R_DS(on) max @ V_GS = 10 V	0.0105 Ω - enables <1 W conduction loss at 10 A, critical for >95% efficiency targets in high-current POL converters
Q_g typ.	11.2 nC - reduces gate drive power and allows use of lower-cost, lower-current drivers in high-frequency (>500 kHz) designs
I_D continuous @ T_C = 25 °C	55.9 A - supports high-current output stages without external heatsinking when mounted on 1" × 1" FR4
R_thJC max	1.9 °C/W - enables direct thermal coupling to PCB copper or heatsink for sustained >40 W power dissipation
Body diode V_SD typ.	0.77 V @ I_S = 5 A - lowers reverse conduction loss vs. standard silicon diodes, improving light-load efficiency in sync rectifiers
E_AS	20 mJ - withstands single-pulse avalanche energy during inductive turn-off transients without failure

Pinout & Package

SISS5108DN-T1-GE3 is housed in the leadless PowerPAK® 1212-8S package (3.3 mm × 3.3 mm footprint), with exposed drain pads on the bottom side for optimal thermal and electrical performance. The top-side marking includes "S5108" and date code; no solder fillet is required at the exposed copper tip per Vishay specification.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection - electrically and thermally tied to bottom-side exposed copper; used for low-inductance return path and thermal sinking
5, 6, 7, 8	Drain (D)	Parallel drain terminals - all connected internally to the die drain; provide low-inductance, high-current output path and primary thermal interface to PCB
G (center pad, underside)	Gate (G)	Single gate terminal located centrally on bottom side - requires precise stencil design for reliable solder joint; controls channel conduction with V_GS(th) = 2–4 V

Key Features

Feature	Design Value
TrenchFET® Gen V process	Delivers industry-leading R_DS(on) × Q_oss FOM for reduced total switching + conduction losses in high-frequency SMPS
100 % R_g and UIS tested	Ensures gate robustness against ESD and system-level overvoltage events, eliminating field failures due to gate oxide rupture or avalanche overstress
PowerPAK 1212-8S package	Provides 2× lower R_thJC vs. SO-8 and 40 % smaller footprint than PowerPAK 8x8, enabling compact, high-power-density board layouts
Low Q_gd/Q_g ratio	0.088 (1.3/14.8 nC) - minimizes Miller effect, improving noise immunity and enabling stable operation with moderate gate resistors
Enhanced body diode softness	t_a/t_b = 20/20 ns - reduces voltage overshoot and EMI during reverse recovery in synchronous rectifier applications

Applications

Synchronous Rectification	Primary-Side Switching
Use Scenario: Secondary-side switch in isolated DC/DC converters (e.g., LLC, forward) operating at 100–500 kHz with 12–24 V output. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve light-load efficiency. Use Value: Achieves >2 % absolute efficiency gain over 40 V Schottky diodes at 20 A load due to R_DS(on) × I² loss dominance and low V_SD.	Use Scenario: High-side switch in non-isolated buck converters powering FPGA or ASIC core rails (0.8–1.2 V, 30–60 A). IC Role / Device Role / Timing Role: Main power switch handling high dV/dt and repetitive hard-switching transitions. Use Value: Enables 600 kHz operation with <1.5 W total loss (conduction + switching) at 40 A, supporting compact 2-layer PCB designs.
Server VRM Power Stage	Industrial Motor Drive Half-Bridge
Use Scenario: High-current phase-leg switch in multi-phase CPU/GPU voltage regulator modules with 300–600 kHz PWM. IC Role / Device Role / Timing Role: Upper or lower MOSFET in interleaved buck stage, requiring tight R_DS(on) matching and fast switching. Use Value: Delivers 55.9 A continuous current with <0.5 °C/W effective thermal resistance when paired with 2 oz. copper thermal pad, meeting VRM13 thermal specs.	Use Scenario: Low-side switch in 24–48 V BLDC motor inverter driving fans, pumps, or conveyors (1–3 kW). IC Role / Device Role / Timing Role: PWM-controlled power switch managing regenerative braking and PWM commutation. Use Value: Withstands 20 mJ single-pulse avalanche energy and 120 A pulsed current, ensuring robustness during motor stall or short-circuit events.

Synchronous Rectification

Primary-Side Switching

Use Scenario: Secondary-side switch in isolated DC/DC converters (e.g., LLC, forward) operating at 100–500 kHz with 12–24 V output.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve light-load efficiency.

Use Value: Achieves >2 % absolute efficiency gain over 40 V Schottky diodes at 20 A load due to R_DS(on) × I² loss dominance and low V_SD.

Use Scenario: High-side switch in non-isolated buck converters powering FPGA or ASIC core rails (0.8–1.2 V, 30–60 A).

IC Role / Device Role / Timing Role: Main power switch handling high dV/dt and repetitive hard-switching transitions.

Use Value: Enables 600 kHz operation with <1.5 W total loss (conduction + switching) at 40 A, supporting compact 2-layer PCB designs.

Server VRM Power Stage

Industrial Motor Drive Half-Bridge

Use Scenario: High-current phase-leg switch in multi-phase CPU/GPU voltage regulator modules with 300–600 kHz PWM.

IC Role / Device Role / Timing Role: Upper or lower MOSFET in interleaved buck stage, requiring tight R_DS(on) matching and fast switching.

Use Value: Delivers 55.9 A continuous current with <0.5 °C/W effective thermal resistance when paired with 2 oz. copper thermal pad, meeting VRM13 thermal specs.

Use Scenario: Low-side switch in 24–48 V BLDC motor inverter driving fans, pumps, or conveyors (1–3 kW).

IC Role / Device Role / Timing Role: PWM-controlled power switch managing regenerative braking and PWM commutation.

Use Value: Withstands 20 mJ single-pulse avalanche energy and 120 A pulsed current, ensuring robustness during motor stall or short-circuit events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF5305PBF	Higher R_DS(on) (0.06 Ω @ 10 V), TO-220 package, 31 A rating - 5.8× larger footprint and 3.3× higher R_thJA	Best suited for low-frequency (<100 kHz), low-density designs where thermal mass outweighs switching loss	Select only if legacy layout compatibility or through-hole assembly is mandatory; not recommended for new high-frequency designs.
DMTH10H015LPS-13	Same PowerPAK 1212-8S package, R_DS(on) = 0.0015 Ω @ 10 V (lower), but V_DS = 100 V and Q_g = 42 nC (higher) - trade-off favors conduction over switching loss	Better for <300 kHz applications with extreme current density (e.g., telecom rectifiers); less ideal for >400 kHz POL converters	Prefer SISS5108DN-T1-GE3 when Q_g-driven gate loss dominates; choose DMTH10H015LPS-13 only when R_DS(on) reduction justifies higher driver cost and layout complexity.

Compared with IRF5305PBF, SISS5108DN-T1-GE3 delivers 82 % lower R_DS(on) and 4× better power density; versus DMTH10H015LPS-13, it trades 43 % lower Q_g for 7× higher R_DS(on), making it optimal for medium-current, high-frequency switching where gate drive loss and layout size are critical.

Availability

SISS5108DN-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and motor drive inverters requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for SISS5108DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power solutions.

The SISS5108DN-T1-GE3 belongs to Vishay's TrenchFET® Gen V power MOSFET product line, engineered specifically for high-frequency, high-efficiency power conversion in data center, telecom, and industrial systems where thermal performance and switching loss minimization are critical.

FAQ

What is the maximum continuous drain current rating for SISS5108DN-T1-GE3 at case temperature of 70 °C?

The SISS5108DN-T1-GE3 has a maximum continuous drain current (I_D) of 44.7 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK 1212-8S package under steady-state conduction; actual usable current depends on PCB copper area, airflow, and ambient temperature. For SISS5108DN-T1-GE3 designs targeting >40 A, thermal vias under the drain pads and 2 oz. copper are strongly recommended.

Does SISS5108DN-T1-GE3 support gate drive voltages below 10 V, and what is its R_DS(on) at 7.5 V?

Yes, SISS5108DN-T1-GE3 is fully characterized down to 7.5 V gate drive: its R_DS(on) max is 0.0124 Ω at V_GS = 7.5 V and I_D = 10 A. This makes SISS5108DN-T1-GE3 compatible with 8 V gate drivers common in isolated flyback controllers and enables marginally higher conduction loss (vs. 10 V) while retaining fast switching speed - t_d(on) increases only from 11 ns to 14 ns at V_GEN = 7.5 V.

Is SISS5108DN-T1-GE3 suitable for avalanche-rated applications, and what is its single-pulse rating?

Yes, SISS5108DN-T1-GE3 is 100 % UIS (unclamped inductive switching) tested and rated for single-pulse avalanche energy (E_AS) of 20 mJ with L = 0.1 mH. Its I_AS rating is 20 A, confirming capability to safely absorb inductive energy during hard commutation or fault events without degradation. This makes SISS5108DN-T1-GE3 appropriate for motor drive half-bridges and non-synchronous flyback snubber circuits where controlled avalanche operation is part of the design.

What is the gate-source threshold voltage range for SISS5108DN-T1-GE3, and how does it vary with temperature?

The gate-source threshold voltage (V_GS(th)) for SISS5108DN-T1-GE3 is specified as 2.0–4.0 V at T_J = 25 °C and I_D = 250 μA, with a negative temperature coefficient of −7.8 mV/°C. As junction temperature rises, V_GS(th) decreases linearly - e.g., at 125 °C, typical V_GS(th) drops to ~2.2 V. This behavior ensures stable turn-on margin across automotive and industrial temperature ranges and must be accounted for in gate driver undervoltage lockout (UVLO) design for SISS5108DN-T1-GE3.

Can SISS5108DN-T1-GE3 be reworked using manual soldering, and what is Vishay's recommendation?

No - Vishay explicitly states that manual soldering with a soldering iron is not recommended for SISS5108DN-T1-GE3 due to its leadless PowerPAK 1212-8S package. The exposed copper terminations require controlled reflow profiles per document 73257; hand-soldering risks insufficient wetting, voiding, or mechanical damage to the singulated edge. For repair, SISS5108DN-T1-GE3 should be removed and replaced using infrared rework stations with nitrogen atmosphere and preheat ramp rates matching the original JEDEC J-STD-020 profile.

SISS5108DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8S

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 15.4A (Ta), 55.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 10.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1150 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 65.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8S

SISS5108DN-T1-GE3 FAQ

1.How can I place an order for SISS5108DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISS5108DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISS5108DN-T1-GE3 reliable?

The price and inventory of SISS5108DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS5108DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISS5108DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS5108DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISS5108DN-T1-GE3?

SISS5108DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISS5108DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISS5108DN-T1-GE3?

For technical support, including SISS5108DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS5108DN-T1-GE3 requirements.

6.How does Aetrix verify that SISS5108DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISS5108DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS5108DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISS5108DN-T1-GE3?

All SISS5108DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS5108DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISS5108DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISS5108DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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