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Vishay Siliconix SISS5110DN-T1-GE3
- Part No.:
- SISS5110DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8S
- Datasheet:
-
SISS5110DN-T1-GE3.pdf
- Description:
- N-CHANNEL 100 V (D-S) MOSFET POW
- Quantity:
- Payment:
- Shipping:
Inventory:12,000
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Product details
Overview
SISS5110DN-T1-GE3 from Vishay Siliconix is an N-channel 100 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® 1212-8S package, delivering RDS(on) = 12.6 mΩ @ VGS = 10 V, Qg = 9.7 nC (typ.), and 46.3 A continuous drain current at TC = 25 °C. It serves as a high-efficiency primary-side switch or synchronous rectifier in DC/DC converters and industrial power supplies.
For engineers reviewing the SISS5110DN-T1-GE3 datasheet, SISS5110DN-T1-GE3 pinout, SISS5110DN-T1-GE3 application, or SISS5110DN-T1-GE3 equivalent, key selection criteria include its low RDS(on) × Qoss figure-of-merit, 100% Rg and UIS tested reliability, and thermal performance with RthJC = 1.8 °C/W (typ.) for high-power density designs.
Technical Context
This MOSFET employs TrenchFET® Gen V silicon architecture optimized for fast switching and minimal conduction loss. Its gate charge profile (Qg = 9.7 nC @ 7.5 V, Qgd = 1.4 nC) enables efficient operation in hard-switched topologies up to several hundred kHz.
The device integrates a robust body diode with trr = 46 ns (typ.) and Qrr = 43 nC (typ.) at IF = 10 A, supporting ZVS-capable synchronous rectification. Thermal design is enabled by its exposed-drain PowerPAK 1212-8S package, offering low junction-to-case resistance and compatibility with standard reflow profiles per JEDEC J-STD-020.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Withstands up to 100 V drain-source blocking voltage, suitable for 48 V input bus and 100 V-class DC/DC stages. |
| RDS(on) max @ 10 V | 12.6 mΩ - Enables <1.3 W conduction loss at 10 A, critical for high-current synchronous rectifiers. |
| Qg typ. @ 7.5 V | 9.7 nC - Low gate drive energy reduces driver IC loading and improves efficiency in high-frequency PWM control. |
| ID cont. @ TC = 25 °C | 46.3 A - Supports high-current primary-side switching without external heatsink in compact layouts. |
| RthJC max | 2.2 °C/W - Allows direct thermal coupling to PCB copper or heatsink for >50 W power dissipation management. |
| VGS(th) | 2–4 V - Ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers. |
| EAS | 20 mJ - Rated single-pulse avalanche energy supports robustness against inductive switching transients. |
Pinout & Package
SISS5110DN-T1-GE3 uses the leadless PowerPAK® 1212-8S package (3.3 mm × 3.3 mm), with exposed drain on the bottom side for thermal and electrical connection. The top-side terminals are arranged in dual-row configuration: pins 1–4 are source (S), pins 5–8 are drain (D), and pin 1 (top-left corner, marked with dot) is gate (G).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Pin 1) | Gate control input | Low-impedance gate terminal accepting standard CMOS/TTL drive; Rg = 0.4–1.7 Ω ensures stable switching with minimal ringing. |
| S (Pins 1–4) | Source return path | Four parallel source terminals reduce loop inductance and improve current sharing in high-di/dt applications like motor drives. |
| D (Pins 5–8) | Drain power output | Four drain terminals connect to exposed bottom copper pad-primary thermal and high-current path to PCB ground plane or heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen V silicon | Delivers industry-leading RDS(on) × Qoss FOM for reduced switching losses in high-frequency SMPS. |
| 100 % Rg and UIS tested | Ensures gate robustness and avalanche reliability across production lots-critical for automotive and industrial power stages. |
| PowerPAK 1212-8S package | Enables 2× higher current density vs. SO-8 while maintaining compatible footprint; bottom-exposed drain simplifies thermal design. |
| Body diode trr = 46 ns (typ.) | Minimizes reverse recovery loss and EMI in synchronous rectification, especially in LLC and phase-shifted full-bridge topologies. |
| VGS = ±20 V rating | Supports gate drive with margin against overshoot in noisy environments, including motor drive half-bridges and industrial inverters. |
Applications
| Server VRM Output Stage | Industrial DC/DC Converter |
|---|---|
|
Use Scenario: High-current, high-efficiency 12 V → 1 V conversion in AI accelerator server VRMs. IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter, operating at 500–1000 kHz with 40–60 A per phase. Use Value: 12.6 mΩ RDS(on) and 9.7 nC Qg reduce both conduction and switching losses, enabling >95 % efficiency at full load. |
Use Scenario: 48 V input isolated DC/DC module for factory automation PLCs and HMIs. IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or asymmetrical half-bridge topology. Use Value: 100 V VDS rating and 20 mJ EAS withstand reflected transients and leakage spikes during transformer reset. |
| Brushless Motor Drive | Telecom Rectifier Module |
|
Use Scenario: 24–48 V three-phase inverter for servo and BLDC motors in robotics and CNC systems. IC Role / Device Role / Timing Role: Low-side switch in 6-pack inverter stage, commutated at ≤20 kHz with PWM dead-time control. Use Value: Fast 5 ns rise/fall times and low Qgd/Qgs ratio minimize shoot-through risk and improve torque linearity. |
Use Scenario: 380 V DC input telecom rectifier (AC/DC + PFC + isolation) delivering 48 V/30 A output. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in center-tapped or LLC resonant transformer output. Use Value: Optimized body diode (VSD = 0.77 V typ., trr = 46 ns) reduces reverse recovery loss and improves light-load efficiency over Schottky alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF540N | RDS(on) = 44 mΩ @ 10 V, Qg = 71 nC, TO-220 package, 33 A ID. | Higher conduction loss and larger footprint; suited for lower-frequency, lower-current designs where thermal mass matters more than density. | Choose IRF540N only when legacy TO-220 layout reuse or cost sensitivity outweighs efficiency and space requirements. |
| DMTH10H015LPSQ | RDS(on) = 15.5 mΩ @ 10 V, Qg = 12.5 nC, PowerPAK SO-8L, AEC-Q101 qualified. | Automotive-grade variant with tighter parametric distribution and extended temperature validation; same footprint but slightly higher Qg. | Prefer DMTH10H015LPSQ for automotive ADAS or infotainment power stages requiring AEC-Q101 compliance. |
Compared with IRF540N and DMTH10H015LPSQ, SISS5110DN-T1-GE3 offers the lowest RDS(on) × Qg FOM in its class, enabling highest efficiency in space-constrained 500 kHz+ DC/DC converters-without requiring AEC-Q101 qualification or TO-220 thermal mass.
Availability
SISS5110DN-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and brushless motor drives requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.
Supply support for SISS5110DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SISS5110DN-T1-GE3 belongs to Vishay's TrenchFET® Gen V family, engineered specifically for high-efficiency, high-density power conversion in datacenter, industrial, and telecom infrastructure.
FAQ
What is the maximum continuous drain current for SISS5110DN-T1-GE3 at case temperature of 70 °C?
The maximum continuous drain current for SISS5110DN-T1-GE3 is 37 A at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK 1212-8S package under sustained power dissipation. Engineers must verify board-level thermal design-including copper area, via count, and airflow-to sustain this current in real-world conditions. SISS5110DN-T1-GE3 achieves this rating with RthJC = 1.8 °C/W (typ.), enabling effective heat transfer to the PCB.
Does SISS5110DN-T1-GE3 support logic-level gate drive?
Yes, SISS5110DN-T1-GE3 has a gate threshold voltage VGS(th) of 2–4 V, making it fully compatible with 3.3 V and 5 V logic-level gate drivers. Its low Rg (0.4–1.7 Ω) and moderate Qg (9.7 nC @ 7.5 V) ensure fast, clean switching without excessive driver stress. This eliminates the need for level-shifting or high-current gate drivers in most industrial and telecom power applications using SISS5110DN-T1-GE3.
What is the body diode forward voltage of SISS5110DN-T1-GE3 at 5 A source current?
The body diode forward voltage (VSD) of SISS5110DN-T1-GE3 is 0.77 V (typ.) at IS = 5 A and TJ = 25 °C, per the Drain-Source Body Diode Characteristics table. This low VSD, combined with trr = 46 ns (typ.), makes SISS5110DN-T1-GE3 highly effective as a synchronous rectifier-reducing conduction loss and reverse recovery energy compared to discrete Schottky diodes in the same application.
Is SISS5110DN-T1-GE3 RoHS-compliant and halogen-free?
Yes, SISS5110DN-T1-GE3 is lead (Pb)-free and halogen-free, as confirmed in the Ordering Information section of the datasheet. It complies with RoHS Directive 2011/65/EU and Vishay's material categorization standard (document #99912). The "-GE3" suffix explicitly denotes green, lead-free, and halogen-free packaging-making SISS5110DN-T1-GE3 suitable for environmentally regulated industrial and telecom equipment.
How does the PowerPAK 1212-8S package of SISS5110DN-T1-GE3 compare thermally to SO-8?
The PowerPAK 1212-8S package used in SISS5110DN-T1-GE3 provides significantly better thermal performance than standard SO-8: RthJC is 1.8 °C/W (typ.) versus ~3.5–4.5 °C/W for SO-8, due to its exposed-drain construction and optimized copper slug. This allows SISS5110DN-T1-GE3 to dissipate >50 W with proper PCB copper, whereas SO-8 variants typically max out near 25 W. The smaller 3.3 mm × 3.3 mm footprint also saves >40 % board area versus SO-8.
SISS5110DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8S
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 13.4A (Ta), 46.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 920 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 4.8W (Ta), 56.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8S
SISS5110DN-T1-GE3 FAQ
1.How can I place an order for SISS5110DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SISS5110DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SISS5110DN-T1-GE3 reliable?
The price and inventory of SISS5110DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS5110DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SISS5110DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS5110DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SISS5110DN-T1-GE3?
SISS5110DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SISS5110DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SISS5110DN-T1-GE3?
For technical support, including SISS5110DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS5110DN-T1-GE3 requirements.
6.How does Aetrix verify that SISS5110DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SISS5110DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS5110DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SISS5110DN-T1-GE3?
All SISS5110DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS5110DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SISS5110DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SISS5110DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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