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Vishay Siliconix SISS5112DN-T1-GE3

Name: SISS5112DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS5112DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISS5112DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8S

Datasheet:: SISS5112DN-T1-GE3.pdf

Description:: N-CHANNEL 100 V (D-S) MOSFET POW

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Product details

Overview

SISS5112DN-T1-GE3 from Vishay Siliconix is an N-channel 100 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® 1212-8S package, delivering R_DS(on) = 14.9 mΩ at V_GS = 10 V, Q_g = 8 nC typ., and 40.7 A continuous drain current at T_C = 25 °C - optimized for high-efficiency synchronous rectification and primary-side switching in DC/DC converters.

For engineers reviewing the SISS5112DN-T1-GE3 datasheet, SISS5112DN-T1-GE3 pinout, SISS5112DN-T1-GE3 application, or SISS5112DN-T1-GE3 equivalent, key selection criteria include its low R_DS(on) × Q_oss figure-of-merit, 100% R_g and UIS tested reliability, and thermal performance with R_thJC = 1.9 °C/W (typ.) for high-power density designs.

Technical Context

This MOSFET employs a trench-based silicon structure tuned for minimal conduction and switching losses, with gate charge characteristics optimized for fast turn-on/turn-off (t_d(on) = 9 ns, t_d(off) = 11 ns @ V_GEN = 10 V) and low output charge (Q_oss = 30 pC). Its body diode exhibits t_rr = 39 ns and Q_rr = 39 nC, supporting efficient hard-switched and synchronous rectifier operation.

The device operates across -55 °C to +150 °C junction temperature range, features ±20 V gate-source voltage rating, and is qualified for surface-mount reflow per JEDEC J-STD-020 (peak 260 °C), with exposed copper drain pads on the bottom side for enhanced thermal conduction in the leadless PowerPAK 1212-8S package.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports primary-side switching in 48 V input DC/DC and offline auxiliary supplies up to 80 V DC bus
R_DS(on) max @ 10 V	14.9 mΩ - enables <1.5 W conduction loss at 40 A, critical for high-current power stages
Q_g typ.	8 nC - reduces gate drive power and allows use of lower-cost drivers in high-frequency (>500 kHz) topologies
I_D cont. @ T_C = 25 °C	40.7 A - supports compact 100 W–200 W power modules without forced airflow
R_thJC max	2.4 °C/W - permits direct thermal coupling to heatsinks or PCB copper for >40 W dissipation in thermally constrained layouts
V_GS(th)	2–4 V - ensures robust turn-on with standard 5 V or 3.3 V logic-level gate drivers
C_iss	790 pF - balances EMI control and switching speed in hard-switched SMPS designs

Pinout & Package

SISS5112DN-T1-GE3 uses the leadless PowerPAK® 1212-8S package (3.3 mm × 3.3 mm footprint, 0.75 mm nominal height), with exposed drain copper on the bottom side for thermal and electrical connection. Top-side terminals are arranged in dual-row configuration: pins 1–4 are source (S), pins 5–8 are drain (D), and pin 2 (top center) is gate (G).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 (Top)	Source (S)	Common source node; electrically and thermally tied to internal S metallization; requires full-solder coverage for current sharing and thermal relief
5, 6, 7, 8 (Top)	Drain (D)	High-side switch node; connected to exposed copper pad on bottom - must be routed to large copper pour for heat dissipation
2 (Top center)	Gate (G)	Control input; isolated from D/S by oxide; requires low-inductance gate loop layout to minimize ringing during fast switching

Key Features

Feature	Design Value
TrenchFET® Gen V architecture	Delivers industry-leading R_DS(on) × Q_g and R_DS(on) × Q_oss FOMs for reduced total switching loss in high-frequency converters
100 % R_g and UIS tested	Ensures gate resistance consistency and ruggedness against unclamped inductive switching stress in motor drive and flyback applications
Low Q_gd/Q_g ratio (0.087)	Minimizes Miller effect, enabling stable operation with minimal external gate resistance in high-dV/dt environments
V_SD = 0.78 V typ. @ I_S = 5 A	Reduces reverse recovery loss in synchronous rectification vs. discrete Schottky diodes, improving light-load efficiency
Lead (Pb)-free and halogen-free	Complies with RoHS 2011/65/EU and JEDEC JS709C, suitable for automotive and industrial end equipment requiring green compliance

Applications

Synchronous Rectification	Primary Side Switch
Use Scenario: Secondary-side switching in isolated DC/DC converters (e.g., LLC resonant, forward, or active clamp flyback) operating at 100–500 kHz. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 20% load. Use Value: Achieves >1.2% efficiency gain at 48 V input / 12 V output, 20 A load due to R_DS(on) = 14.9 mΩ and low Q_rr = 39 nC.	Use Scenario: High-side main switch in non-isolated buck converters or isolated flyback/forward topologies with 36–75 V input rails. IC Role / Device Role / Timing Role: Primary power switch handling repetitive 40 A peak currents with fast turn-off (t_f = 4 ns) to minimize overlap loss. Use Value: Enables >95% efficiency at 100 kHz with minimal gate drive loss (Q_g = 8 nC) and thermal margin (R_thJC = 1.9 °C/W).
DC/DC Converter Power Stage	Motor Drive Control
Use Scenario: High-current buck or half-bridge stage in point-of-load (POL) regulators for FPGA, ASIC, or GPU core supplies. IC Role / Device Role / Timing Role: High-efficiency power switch operating at 300–1000 kHz with tight duty cycle control and low dead-time sensitivity. Use Value: Supports 40 A continuous output with <1.8 W conduction loss and <0.4 W switching loss at 500 kHz, reducing thermal design complexity.	Use Scenario: H-bridge leg or phase-leg switch in 24–48 V brushed DC or BLDC motor drives with PWM frequencies up to 20 kHz. IC Role / Device Role / Timing Role: Robust power switch handling pulsed 70 A avalanche current (I_AS = 20 A) and repetitive UIS events during commutation. Use Value: Eliminates need for external freewheeling diodes via low-V_SD body diode (0.78 V) and controlled t_rr = 39 ns, reducing component count and board space.

Synchronous Rectification

Primary Side Switch

Use Scenario: Secondary-side switching in isolated DC/DC converters (e.g., LLC resonant, forward, or active clamp flyback) operating at 100–500 kHz.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 20% load.

Use Value: Achieves >1.2% efficiency gain at 48 V input / 12 V output, 20 A load due to R_DS(on) = 14.9 mΩ and low Q_rr = 39 nC.

Use Scenario: High-side main switch in non-isolated buck converters or isolated flyback/forward topologies with 36–75 V input rails.

IC Role / Device Role / Timing Role: Primary power switch handling repetitive 40 A peak currents with fast turn-off (t_f = 4 ns) to minimize overlap loss.

Use Value: Enables >95% efficiency at 100 kHz with minimal gate drive loss (Q_g = 8 nC) and thermal margin (R_thJC = 1.9 °C/W).

DC/DC Converter Power Stage

Motor Drive Control

Use Scenario: High-current buck or half-bridge stage in point-of-load (POL) regulators for FPGA, ASIC, or GPU core supplies.

IC Role / Device Role / Timing Role: High-efficiency power switch operating at 300–1000 kHz with tight duty cycle control and low dead-time sensitivity.

Use Value: Supports 40 A continuous output with <1.8 W conduction loss and <0.4 W switching loss at 500 kHz, reducing thermal design complexity.

Use Scenario: H-bridge leg or phase-leg switch in 24–48 V brushed DC or BLDC motor drives with PWM frequencies up to 20 kHz.

IC Role / Device Role / Timing Role: Robust power switch handling pulsed 70 A avalanche current (I_AS = 20 A) and repetitive UIS events during commutation.

Use Value: Eliminates need for external freewheeling diodes via low-V_SD body diode (0.78 V) and controlled t_rr = 39 ns, reducing component count and board space.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF5305PBF	Higher R_DS(on) (60 mΩ @ 10 V), TO-220 package, slower switching (Q_g = 54 nC)	Lower power density, limited to ≤100 kHz operation, requires heatsink	Choose for cost-sensitive, low-frequency (<100 kHz), through-hole designs where thermal mass outweighs size constraints
SISF100DN-T1-GE3	Same PowerPAK 1212-8S package, but 100 V/12.5 mΩ/11.5 nC - lower R_DS(on), higher Q_g	Better conduction loss, slightly higher gate drive requirement; identical thermal and layout compatibility	Choose when <12 mΩ R_DS(on) is required and 11.5 nC Q_g is acceptable for driver capability

Compared with IRF5305PBF, SISS5112DN-T1-GE3 delivers 4× lower conduction loss and 85% smaller footprint; versus SISF100DN-T1-GE3, it trades 2.4 mΩ higher R_DS(on) for 3.5 nC lower Q_g, favoring high-frequency, gate-drive-limited designs.

Availability

SISS5112DN-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC converters, motor drive control, and power supply designs requiring stable component supply, long-term manufacturability, and RoHS-compliant leadless packaging.

Supply support for SISS5112DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and miniaturization.

The SISS5112DN-T1-GE3 belongs to Vishay's TrenchFET® Gen V family, engineered specifically for high-frequency, high-current power conversion in space-constrained industrial, computing, and telecom applications.

FAQ

What is the maximum continuous drain current rating for SISS5112DN-T1-GE3 at case temperature of 70 °C?

The maximum continuous drain current for SISS5112DN-T1-GE3 is 32.6 A when the case temperature is maintained at 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK 1212-8S package and ensures safe operation within the 150 °C maximum junction temperature. Designers must verify heatsinking and PCB copper area to sustain this current in real-world conditions. SISS5112DN-T1-GE3 maintains R_DS(on) stability across this range due to its positive temperature coefficient.

Does SISS5112DN-T1-GE3 support logic-level gate drive?

Yes, SISS5112DN-T1-GE3 supports logic-level gate drive with a gate threshold voltage (V_GS(th)) range of 2–4 V, allowing reliable turn-on using standard 3.3 V or 5 V microcontroller outputs or gate drivers. Its R_DS(on) remains low (18.5 mΩ max at V_GS = 7.5 V), ensuring efficient operation even with marginal gate voltage margins. SISS5112DN-T1-GE3 does not require bootstrap or level-shift circuitry in low-side configurations.

What is the thermal resistance from junction to case (R_thJC) for SISS5112DN-T1-GE3, and how is it measured?

The typical junction-to-case thermal resistance (R_thJC) for SISS5112DN-T1-GE3 is 1.9 °C/W, with a maximum of 2.4 °C/W, measured from the silicon die to the exposed drain copper pad on the bottom of the PowerPAK 1212-8S package. This value assumes direct thermal interface to a heatsink or large PCB copper pour. SISS5112DN-T1-GE3 leverages the entire bottom-side drain pad for heat transfer, making thermal vias under the pad essential for achieving rated performance.

Is SISS5112DN-T1-GE3 suitable for avalanche energy handling in inductive switching applications?

Yes, SISS5112DN-T1-GE3 is rated for single-pulse avalanche energy (E_AS) of 20 mJ and single-pulse avalanche current (I_AS) of 20 A with L = 0.1 mH, confirming its capability to withstand unclamped inductive switching events common in motor drive and flyback converter primary switches. All units undergo 100% UIS testing, ensuring robustness. SISS5112DN-T1-GE3 should not be operated repeatedly in avalanche without derating per Vishay's application notes.

How does the PowerPAK 1212-8S package of SISS5112DN-T1-GE3 differ from traditional SO-8 in thermal performance?

The PowerPAK 1212-8S package of SISS5112DN-T1-GE3 provides significantly better thermal performance than standard SO-8: R_thJC is 1.9 °C/W (typ.) versus ~6–8 °C/W for SO-8, due to its exposed drain copper on the bottom side acting as a direct thermal path. It also offers 40% smaller footprint (3.3 mm × 3.3 mm vs. 4.9 mm × 6.0 mm) and lower parasitic inductance. SISS5112DN-T1-GE3 requires reflow soldering per JEDEC J-STD-020; manual iron soldering is not recommended.

SISS5112DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8S

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta), 40.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 14.9mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 790 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 52W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8S

SISS5112DN-T1-GE3 FAQ

1.How can I place an order for SISS5112DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISS5112DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISS5112DN-T1-GE3 reliable?

The price and inventory of SISS5112DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS5112DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISS5112DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS5112DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISS5112DN-T1-GE3?

SISS5112DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISS5112DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISS5112DN-T1-GE3?

For technical support, including SISS5112DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS5112DN-T1-GE3 requirements.

6.How does Aetrix verify that SISS5112DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISS5112DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS5112DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISS5112DN-T1-GE3?

All SISS5112DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS5112DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISS5112DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISS5112DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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