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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISS5708DN-T1-BE3

Name: SISS5708DN-T1-BE3
Brand: Vishay Siliconix
SKU: SISS5708DN-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISS5708DN-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8S

Datasheet:: SISS5708DN-T1-BE3.pdf

Description:: N-CHANNEL 150 V (D-S) MOSFET 150

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Product details

Overview

SISS5708DN-T1-BE3 from Vishay Siliconix is an N-channel 150 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® 1212-8S package, delivering R_DS(on) = 0.023 Ω at V_GS = 10 V, Q_g = 9.7 nC, and 33.8 A continuous drain current at T_C = 25 °C. It serves as a high-efficiency primary-side switch or synchronous rectifier in DC/DC converters and industrial power supplies.

For engineers reviewing the SISS5708DN-T1-BE3 datasheet, SISS5708DN-T1-BE3 pinout, SISS5708DN-T1-BE3 application, or SISS5708DN-T1-BE3 equivalent, key selection criteria include its low R_DS(on) × Q_oss figure-of-merit, 100% R_g and UIS testing, and thermal resistance R_thJC = 1.5 °C/W for high-power density designs.

Technical Context

This MOSFET employs TrenchFET® Gen V silicon architecture optimized for fast switching and minimal conduction losses in hard-switched and synchronous rectification topologies. Its gate charge profile-Q_gd = 1.4 nC and Q_gs = 6.0 nC-enables precise control of turn-on/turn-off timing with low gate drive loss.

The device features a robust body diode with t_rr = 63 ns (typ.), Q_rr = 130 nC (typ.), and V_SD = 0.79 V (typ. at I_S = 5 A), supporting efficient reverse recovery in buck and LLC resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Supports primary-side switching in 48 V–110 V input DC/DC and offline auxiliary supplies.
R_DS(on) max @ 10 V	0.023 Ω - Enables ≤ 2.3 W conduction loss at 10 A, critical for thermally constrained PCB layouts.
Q_g typ.	9.7 nC - Reduces gate driver power demand and enables >1 MHz operation with low EMI.
I_D cont. @ T_C = 25 °C	33.8 A - Sustains high-current loads without derating when mounted on ≥1"×1" FR4 with copper pour.
R_thJC max.	1.9 °C/W - Allows direct thermal coupling to heatsink or metal-core PCB for <10 °C junction rise per watt.
V_GS(th)	2–4 V - Ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level gate drivers.
E_AS	11.25 mJ - Withstands single-pulse avalanche stress during inductive load switching without failure.

Pinout & Package

SISS5708DN-T1-BE3 uses the leadless PowerPAK® 1212-8S package (3.3 mm × 3.3 mm × 0.75 mm), with exposed drain pads on bottom side for optimal thermal and electrical performance. The top-side marking includes "SISS5708DN" and date code; no plating on singulated copper tips - solder fillet not required for functional interconnection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 (S)	Source	Low-impedance parallel source connection; ties directly to power ground plane for minimal loop inductance.
5, 6, 7, 8 (D)	Drain	Exposed copper drain terminals on bottom; electrically and thermally connected to PCB copper pour or heatsink.
G (pin 1 dot adjacent)	Gate	Single top-side gate pad; requires controlled impedance routing to minimize ringing during fast switching.

Key Features

Feature	Design Value
TrenchFET® Gen V silicon	Delivers industry-leading R_DS(on) × Q_oss FOM for reduced switching + conduction loss trade-off in high-frequency SMPS.
100% R_g and UIS tested	Ensures gate resistance consistency (<0.5–2.1 Ω) and ruggedness against unclamped inductive switching stress.
Optimized body diode	t_rr = 63 ns and Q_rr = 130 nC enable soft-recovery behavior, lowering EMI and reducing snubber losses.
PowerPAK 1212-8S package	Reduces parasitic inductance by >30% vs. SO-8; supports >2× current density with same footprint.

Applications

Server VRM Power Stage	Industrial DC/DC Converter
Use Scenario: High-current, multiphase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 200 A per phase. IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 500 kHz–1 MHz with synchronous rectification. Use Value: Low R_DS(on) × Q_g minimizes combined conduction and gate loss, enabling >95% efficiency at full load.	Use Scenario: 24 V input to 5 V/12 V isolated DC/DC module for PLC I/O modules and motor drives. IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or half-bridge topology. Use Value: 150 V rating and 11.25 mJ E_AS withstand reflected transients from transformer leakage inductance.
Telecom Rectifier Module	Automotive On-Board Charger (OBC) Auxiliary Supply
Use Scenario: 48 V telecom rectifier with 380 V output, using SiSS5708DN-T1-BE3 in LLC resonant half-bridge primary switches. IC Role / Device Role / Timing Role: Fast-switching primary MOSFET with low Q_gd/Q_g ratio for ZVS optimization. Use Value: Q_gd = 1.4 nC ensures clean turn-off transition, reducing dead-time loss and improving light-load efficiency.	Use Scenario: 400 V battery-fed auxiliary 12 V supply in EV OBC, requiring high-reliability primary-side switching. IC Role / Device Role / Timing Role: Isolated flyback or forward converter primary switch with reinforced insulation requirements. Use Value: -55 °C to +150 °C operating range and 100% UIS test support automotive AEC-Q101 stress compliance pathways.

Server VRM Power Stage

Industrial DC/DC Converter

Use Scenario: High-current, multiphase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 200 A per phase.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 500 kHz–1 MHz with synchronous rectification.

Use Value: Low R_DS(on) × Q_g minimizes combined conduction and gate loss, enabling >95% efficiency at full load.

Use Scenario: 24 V input to 5 V/12 V isolated DC/DC module for PLC I/O modules and motor drives.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or half-bridge topology.

Use Value: 150 V rating and 11.25 mJ E_AS withstand reflected transients from transformer leakage inductance.

Telecom Rectifier Module

Automotive On-Board Charger (OBC) Auxiliary Supply

Use Scenario: 48 V telecom rectifier with 380 V output, using SiSS5708DN-T1-BE3 in LLC resonant half-bridge primary switches.

IC Role / Device Role / Timing Role: Fast-switching primary MOSFET with low Q_gd/Q_g ratio for ZVS optimization.

Use Value: Q_gd = 1.4 nC ensures clean turn-off transition, reducing dead-time loss and improving light-load efficiency.

Use Scenario: 400 V battery-fed auxiliary 12 V supply in EV OBC, requiring high-reliability primary-side switching.

IC Role / Device Role / Timing Role: Isolated flyback or forward converter primary switch with reinforced insulation requirements.

Use Value: -55 °C to +150 °C operating range and 100% UIS test support automotive AEC-Q101 stress compliance pathways.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 150 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TRPBF	R_DS(on) = 0.025 Ω @ 10 V; Q_g = 11.5 nC; PowerSO-8 package (larger footprint, higher R_thJA)	Higher gate charge increases driver loss; less suitable for >1 MHz designs.	Prefer SISS5708DN-T1-BE3 where board space and thermal performance are constrained.
DMTH1500UTS-13	R_DS(on) = 0.022 Ω @ 10 V; Q_g = 10.5 nC; PowerDI 5060 package (different pinout, non-drop-in)	Requires PCB redesign; body diode t_rr = 75 ns - higher recovery loss than SISS5708DN-T1-BE3.	Choose SISS5708DN-T1-BE3 for existing PowerPAK 1212-8S layouts and tighter EMI targets.

Compared with IRF6642TRPBF and DMTH1500UTS-13, SISS5708DN-T1-BE3 offers the lowest R_DS(on) × Q_oss FOM and best thermal resistance in its footprint class, making it optimal for high-density, high-efficiency 150 V switching applications where layout reuse and thermal headroom are critical.

Availability

SISS5708DN-T1-BE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, telecom rectifiers, and automotive auxiliary power supplies requiring stable component supply across multi-year production cycles.

Supply support for SISS5708DN-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SISS5708DN-T1-BE3 belongs to Vishay's TrenchFET® Gen V family, engineered specifically for high-frequency, high-current power conversion in datacenter, industrial, and automotive systems where low FOM and ruggedness are mandatory.

FAQ

What is the maximum continuous drain current rating for SISS5708DN-T1-BE3 at 70 °C case temperature?

The SISS5708DN-T1-BE3 supports 27 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under steady-state conduction; actual usable current depends on PCB copper area, airflow, and ambient conditions. For sustained 27 A operation, a minimum 1" × 1" FR4 board with 2 oz copper and thermal vias is recommended per Vishay's layout guidelines.

Does SISS5708DN-T1-BE3 have avalanche capability, and what is its rated single-pulse energy?

Yes, SISS5708DN-T1-BE3 is 100% tested for unclamped inductive switching (UIS) and rated for 11.25 mJ single-pulse avalanche energy (E_AS) with L = 0.1 mH. This capability allows safe operation during transient overcurrent events in inductive circuits such as motor drives or DC/DC converters without external clamping. The device's 15 A I_AS rating further confirms its ruggedness under short-duration overload conditions.

What is the gate-source threshold voltage range for SISS5708DN-T1-BE3, and how does it affect gate drive design?

The gate-source threshold voltage (V_GS(th)) for SISS5708DN-T1-BE3 is specified as 2–4 V at I_D = 250 µA. This range ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers while maintaining sufficient noise margin. Designers should apply ≥7.5 V gate drive to achieve the rated R_DS(on) of 0.027 Ω, and ≥10 V to reach 0.023 Ω - critical for minimizing conduction loss in high-current applications.

How does the PowerPAK 1212-8S package of SISS5708DN-T1-BE3 improve thermal performance compared to SO-8?

The PowerPAK 1212-8S package of SISS5708DN-T1-BE3 achieves R_thJC = 1.5 °C/W (typ.), nearly 3× better than typical SO-8 MOSFETs (~4–5 °C/W). Its dual-sided copper structure places drain terminals directly on the bottom for low-inductance, high-current paths and efficient heat transfer to the PCB. Unlike SO-8, it eliminates bond wires and plastic body thermal barriers, enabling higher power density without forced cooling in compact power stages.

Is SISS5708DN-T1-BE3 suitable for synchronous rectification in a 12 V output LLC resonant converter?

Yes, SISS5708DN-T1-BE3 is well-suited for synchronous rectification in 12 V LLC outputs due to its low R_DS(on) (0.023 Ω @ 10 V), fast body diode (t_rr = 63 ns), and low Q_gd/Q_g ratio (1.4/9.7 ≈ 0.14), which supports precise timing control and reduces reverse recovery loss. Its 150 V rating provides ample margin against voltage spikes in secondary-side configurations, and the PowerPAK 1212-8S footprint simplifies layout in high-density secondary-side layouts.

SISS5708DN-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen V

Package/Case:: PowerPAK® 1212-8S

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 9.3A (Ta), 33.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 23mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 975 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 65.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8S

SISS5708DN-T1-BE3 FAQ

1.How can I place an order for SISS5708DN-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISS5708DN-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISS5708DN-T1-BE3 reliable?

The price and inventory of SISS5708DN-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS5708DN-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SISS5708DN-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS5708DN-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISS5708DN-T1-BE3?

SISS5708DN-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISS5708DN-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISS5708DN-T1-BE3?

For technical support, including SISS5708DN-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS5708DN-T1-BE3 requirements.

6.How does Aetrix verify that SISS5708DN-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SISS5708DN-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS5708DN-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SISS5708DN-T1-BE3?

All SISS5708DN-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS5708DN-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISS5708DN-T1-BE3 part is unused and in its original packaging.

Return procedure for SISS5708DN-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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