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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISS5708DN-T1-GE3

Name: SISS5708DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS5708DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISS5708DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8S

Datasheet:: SISS5708DN-T1-GE3.pdf

Description:: N-CHANNEL 150 V (D-S) MOSFET POW

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Product details

Overview

SISS5708DN-T1-GE3 from Vishay Siliconix is an N-channel 150 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® 1212-8S package, delivering R_DS(on) = 0.023 Ω at V_GS = 10 V, Q_g = 9.7 nC, and continuous drain current I_D = 33.8 A at T_C = 25 °C. It is engineered for high-efficiency synchronous rectification and primary-side switching in DC/DC converters and industrial power supplies.

For engineers reviewing the SISS5708DN-T1-GE3 datasheet, SISS5708DN-T1-GE3 pinout, SISS5708DN-T1-GE3 application, or SISS5708DN-T1-GE3 equivalent, key selection criteria include its low R_DS(on) × Q_g and R_DS(on) × Q_oss figures-of-merit, 100 % R_g and UIS testing, and thermal resistance R_thJC = 1.5 °C/W for high-power density designs.

Technical Context

This MOSFET employs TrenchFET® Gen V silicon technology optimized for fast switching and low conduction loss. Its gate charge profile-Q_gd = 1.4 nC and Q_gs = 6.0 nC-supports efficient hard-switching operation with t_r = 6–12 ns and t_f = 9–18 ns under 10 A load conditions.

The device features a robust body diode with V_SD = 0.79–1.1 V at I_S = 5 A and reverse recovery charge Q_rr = 130–260 nC, enabling reliable operation in synchronous rectifier topologies where diode conduction and recovery behavior directly impact efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Maximum drain-source blocking voltage suitable for 120 V AC-input or 48 V bus-derived isolated DC/DC primary-side switching.
R_DS(on) @ 10 V	0.023 Ω - Enables <1.5 W conduction loss at 10 A, critical for thermally constrained power stages.
Q_g typ.	9.7 nC - Low gate charge reduces driver power demand and enables high-frequency PWM up to 1 MHz with minimal switching loss.
I_D cont. @ T_C = 25 °C	33.8 A - Supports high-current output stages without external heatsinking when mounted on ≥1"×1" FR4 board.
R_thJC max.	1.9 °C/W - Allows direct thermal coupling to PCB copper or heatsink for junction temperature control in high-PD applications.
V_GS(th)	2–4 V - Ensures clean turn-on with standard 5 V or 3.3 V logic-level gate drivers without level-shifting.
C_iss	975 pF - Input capacitance impacts gate drive loop stability and Miller effect during high-dV/dt transitions.

Pinout & Package

SISS5708DN-T1-GE3 is housed in the leadless PowerPAK® 1212-8S package (3.3 mm × 3.3 mm footprint), with exposed drain pads on the bottom side for enhanced thermal performance and source/gate terminals accessible on the top surface.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 (Top)	Source (S)	Four parallel top-side source terminals reduce source inductance and improve current sharing in high-di/dt applications.
5, 6, 7, 8 (Top)	Drain (D)	Four top-side drain terminals provide low-inductance connection path for high-frequency switching nodes.
G (Center, Top)	Gate (G)	Single central gate pad minimizes gate loop inductance and improves switching consistency across paralleled devices.
Bottom (Entire Exposed Area)	Drain (D)	Large copper-exposed bottom drain serves as primary thermal path and high-current return path, requiring full-solder coverage per IPC-7095.

Key Features

Feature	Design Value
TrenchFET® Gen V silicon	Delivers industry-leading R_DS(on) × Q_g = 0.22 Ω·nC and R_DS(on) × Q_oss = 1.0 Ω·nC, directly reducing total switching + conduction loss in 300–1000 kHz converters.
100 % R_g and UIS tested	Guarantees gate resistance ≤2.1 Ω and single-pulse avalanche energy E_AS = 11.25 mJ, ensuring ruggedness against transient overvoltage and gate drive mismatch.
PowerPAK® 1212-8S package	Provides 4× source and 4× drain top terminals plus full-bottom drain exposure, enabling <500 pF effective source inductance and <0.5 °C/W additional thermal resistance vs. SO-8.
Low V_GS(th) variation	ΔV_GS(th)/T_J = −8.6 mV/°C ensures stable turn-on threshold across −55 to +150 °C, minimizing shoot-through risk in half-bridge configurations.
Body diode Q_rr optimization	Q_rr = 130–260 nC with t_rr = 63–126 ns supports soft-recovery behavior in synchronous rectifiers, reducing voltage spikes and EMI generation.

Applications

Synchronous Rectifier in Isolated DC/DC	Primary-Side Switch in Flyback Converter
Use Scenario: Used on secondary side of 65–100 W USB PD adapters to replace Schottky diodes. IC Role / Device Role / Timing Role: N-channel power MOSFET operating in synchronous rectification mode, driven by transformer-coupled or controller-synchronized gate signal. Use Value: Reduces forward voltage drop from ~0.5 V to <0.05 V at 10 A, improving efficiency by 1.2–2.0 % and lowering thermal stress on secondary PCB area.	Use Scenario: Primary switch in 36–75 W offline flyback converters for industrial IoT gateways. IC Role / Device Role / Timing Role: High-voltage N-channel MOSFET handling 150 V DC link, switching at 65–130 kHz with ZVS-assisted topology. Use Value: Low Q_g and optimized C_oss enable >90 % efficiency at full load while maintaining <150 °C peak junction temperature without forced air cooling.
48 V Input DC/DC Buck Converter	Brushless DC Motor Phase Switch
Use Scenario: High-current buck stage converting 48 V bus to 12 V for server auxiliary rails. IC Role / Device Role / Timing Role: Low-side switch in multiphase interleaved buck regulator with 500 kHz PWM frequency. Use Value: R_DS(on) = 0.023 Ω limits conduction loss to <2.3 W at 30 A, allowing compact 2-layer PCB layout with minimal copper area.	Use Scenario: Half-bridge leg switch in 200–500 W BLDC motor drives for HVAC actuators. IC Role / Device Role / Timing Role: N-channel MOSFET in 3-phase inverter bridge, commutated via 6-step trapezoidal control at ≤20 kHz. Use Value: Robust UIS rating and 15 A single-pulse avalanche current support safe operation during motor stall or short-circuit events without external snubbers.

Synchronous Rectifier in Isolated DC/DC

Primary-Side Switch in Flyback Converter

Use Scenario: Used on secondary side of 65–100 W USB PD adapters to replace Schottky diodes.

IC Role / Device Role / Timing Role: N-channel power MOSFET operating in synchronous rectification mode, driven by transformer-coupled or controller-synchronized gate signal.

Use Value: Reduces forward voltage drop from ~0.5 V to <0.05 V at 10 A, improving efficiency by 1.2–2.0 % and lowering thermal stress on secondary PCB area.

Use Scenario: Primary switch in 36–75 W offline flyback converters for industrial IoT gateways.

IC Role / Device Role / Timing Role: High-voltage N-channel MOSFET handling 150 V DC link, switching at 65–130 kHz with ZVS-assisted topology.

Use Value: Low Q_g and optimized C_oss enable >90 % efficiency at full load while maintaining <150 °C peak junction temperature without forced air cooling.

48 V Input DC/DC Buck Converter

Brushless DC Motor Phase Switch

Use Scenario: High-current buck stage converting 48 V bus to 12 V for server auxiliary rails.

IC Role / Device Role / Timing Role: Low-side switch in multiphase interleaved buck regulator with 500 kHz PWM frequency.

Use Value: R_DS(on) = 0.023 Ω limits conduction loss to <2.3 W at 30 A, allowing compact 2-layer PCB layout with minimal copper area.

Use Scenario: Half-bridge leg switch in 200–500 W BLDC motor drives for HVAC actuators.

IC Role / Device Role / Timing Role: N-channel MOSFET in 3-phase inverter bridge, commutated via 6-step trapezoidal control at ≤20 kHz.

Use Value: Robust UIS rating and 15 A single-pulse avalanche current support safe operation during motor stall or short-circuit events without external snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 150 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TRPBF	R_DS(on) = 0.025 Ω @ 10 V; Q_g = 11.5 nC; PowerSO-8 package (larger footprint, higher R_thJA).	Higher gate charge increases driver losses above 500 kHz; less suitable for ultra-thin adapter designs due to 1.7 mm height.	Prefer SISS5708DN-T1-GE3 for space-constrained, high-frequency synchronous rectifiers where thermal resistance and footprint are critical.
DMTH10H150LPS-13	R_DS(on) = 0.021 Ω @ 10 V; Q_g = 14.5 nC; PowerDI 5060 package; lower V_GS(th) (1.2–2.4 V) increases noise sensitivity.	Higher Q_g degrades high-frequency efficiency; wider V_GS(th) tolerance requires tighter gate drive design margin.	Choose SISS5708DN-T1-GE3 when consistent gate drive timing and low Q_g-driven losses outweigh marginal R_DS(on) advantage.

Compared with IRF6642TRPBF and DMTH10H150LPS-13, SISS5708DN-T1-GE3 offers the best balance of low R_DS(on) × Q_g, tight V_GS(th) distribution, and ultra-compact PowerPAK® 1212-8S thermal performance-making it optimal for high-density, high-efficiency 150 V switching applications where layout area and thermal headroom are constrained.

Availability

SISS5708DN-T1-GE3 is available at Aetrix Electronics and suitable for industrial power supplies, telecom DC/DC modules, and motor control inverters requiring stable component supply, RoHS-compliant packaging, and long-term production continuity.

Supply support for SISS5708DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The SISS5708DN-T1-GE3 belongs to Vishay's TrenchFET® Gen V power MOSFET family, designed specifically for high-frequency, high-efficiency switching in space- and thermally-constrained power conversion systems.

FAQ

What is the maximum continuous drain current rating for SISS5708DN-T1-GE3 at case temperature 70 °C?

The SISS5708DN-T1-GE3 supports a continuous drain current I_D of 27 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area (1" × 1" FR4) and accounts for thermal derating beyond 25 °C case temperature. The device maintains R_DS(on) stability up to 150 °C junction temperature, enabling robust operation in enclosed industrial environments.

Does SISS5708DN-T1-GE3 require a gate resistor for stable switching in a 500 kHz flyback converter?

Yes, SISS5708DN-T1-GE3 benefits from an external gate resistor (typically 2–10 Ω) to dampen ringing caused by its low gate resistance (R_g = 0.5–2.1 Ω) and minimize overshoot during 500 kHz switching. The datasheet confirms t_r = 6–12 ns and t_f = 9–18 ns with R_g = 1 Ω, so increasing gate resistance slightly extends transition times to reduce EMI while keeping total switching loss within acceptable limits for that frequency.

Can SISS5708DN-T1-GE3 be used in a synchronous rectifier configuration with 3.3 V gate drive?

Yes, SISS5708DN-T1-GE3 has a gate threshold voltage V_GS(th) of 2–4 V and delivers R_DS(on) = 0.027 Ω at V_GS = 7.5 V, making it compatible with 3.3 V logic-level gate drivers when paired with appropriate bootstrap or isolated gate drive circuitry. However, full enhancement requires ≥7.5 V for minimum R_DS(on); operation at 3.3 V yields higher conduction loss and must be validated for thermal margin at target load.

What is the thermal resistance from junction to ambient (R_thJA) for SISS5708DN-T1-GE3 on a standard FR4 board?

The SISS5708DN-T1-GE3 exhibits R_thJA = 20–25 °C/W under standard test conditions (surface-mounted on 1" × 1" FR4 board, t ≤ 10 s). This value reflects natural convection cooling; actual R_thJA improves significantly with added copper pour, internal layers, or heatsink attachment to the exposed drain pad. For steady-state design, R_thJC = 1.5–1.9 °C/W should be used with external thermal interface resistance.

Is SISS5708DN-T1-GE3 suitable for avalanche-rated operation in motor drive fault conditions?

Yes, SISS5708DN-T1-GE3 is 100 % UIS (Unclamped Inductive Switching) tested and rated for single-pulse avalanche energy E_AS = 11.25 mJ and avalanche current I_AS = 15 A (L = 0.1 mH). This makes it suitable for controlled avalanche operation during motor phase short-circuits or inductive load turn-off, provided pulse duration and repetition rate remain within datasheet limits and PCB layout minimizes stray inductance.

SISS5708DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8S

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 9.3A (Ta), 33.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 23mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 975 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 65.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8S

SISS5708DN-T1-GE3 FAQ

1.How can I place an order for SISS5708DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISS5708DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISS5708DN-T1-GE3 reliable?

The price and inventory of SISS5708DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS5708DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISS5708DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS5708DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISS5708DN-T1-GE3?

SISS5708DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISS5708DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISS5708DN-T1-GE3?

For technical support, including SISS5708DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS5708DN-T1-GE3 requirements.

6.How does Aetrix verify that SISS5708DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISS5708DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS5708DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISS5708DN-T1-GE3?

All SISS5708DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS5708DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISS5708DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISS5708DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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