Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISS5710DN-T1-GE3

Name: SISS5710DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS5710DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SISS5710DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8S

Datasheet:: SISS5710DN-T1-GE3.pdf

Description:: N-CHANNEL 150 V (D-S) MOSFET POW

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,707

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SISS5710DN-T1-GE3 from Vishay Siliconix is an N-channel 150 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® 1212-8S package, with R_DS(on) = 0.0315 Ω @ V_GS = 10 V, Q_g = 7.7 nC typ., and continuous drain current I_D = 26.2 A at T_C = 25 °C. It serves as a high-efficiency primary-side switch or synchronous rectifier in DC/DC converters and OR-ing circuits.

For engineers reviewing the SISS5710DN-T1-GE3 datasheet, SISS5710DN-T1-GE3 pinout, SISS5710DN-T1-GE3 application, or SISS5710DN-T1-GE3 equivalent, key selection criteria include its low R_DS(on) × Q_g and R_DS(on) × Q_oss figures of merit, 100% R_g and UIS testing, and suitability for high-frequency switching in compact power stages.

Technical Context

This MOSFET employs TrenchFET® Gen V process technology optimized for minimal conduction and switching losses. Its gate charge profile supports fast turn-on/turn-off with t_d(on) = 11 ns and t_f = 13 ns under V_GEN = 10 V, R_g = 1 Ω conditions, while C_iss = 770 pF and C_oss = 105 pF enable stable operation in hard-switched topologies.

The device integrates a robust body diode with V_SD = 0.81 V @ I_S = 5 A and Q_rr = 113 nC, supporting efficient reverse recovery in synchronous rectification. Thermal design is aided by R_thJC = 1.9 °C/W (typ.) and R_thJA = 23 °C/W (t ≤ 10 s), enabling high-power density layouts on FR4 PCBs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Maximum drain-source blocking voltage for primary-side switch applications up to 120 V bus rails
R_DS(on) @ 10 V	0.0315 Ω - Enables <1 W conduction loss at 10 A, critical for high-current DC/DC output stages
Q_g typ.	7.7 nC - Low gate charge reduces driver power demand and enables >1 MHz switching in GaN-compatible controllers
I_D cont. @ T_C=25°C	26.2 A - Supports high-current motor drive or battery management paths without external heatsinking
C_oss	105 pF - Minimizes capacitive turn-off loss and improves light-load efficiency in resonant converters
Q_rr	113 nC - Low reverse recovery charge reduces diode switching loss and EMI in synchronous rectifiers
R_thJC	1.9 °C/W - Allows direct thermal coupling to PCB copper or heatsink for sustained 30+ W dissipation

Pinout & Package

SISS5710DN-T1-GE3 uses the leadless PowerPAK® 1212-8S package (3.3 mm × 3.3 mm footprint), with exposed drain pads on the bottom side for optimal thermal and electrical performance. The top-side marking includes part number and date code; no solder fillet is required at the exposed copper tip per Vishay specification.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching
5, 6, 7, 8	Drain (D)	Four exposed drain terminals on bottom side provide low-inductance, high-current path to PCB ground plane
G (top center)	Gate (G)	Single gate pad located centrally for symmetric drive and minimized gate loop inductance

Key Features

Feature	Design Value
TrenchFET® Gen V process	Delivers industry-leading R_DS(on) × Q_g and R_DS(on) × Q_oss FOMs for reduced total switching loss
100% R_g and UIS tested	Ensures gate robustness against transient overvoltage and avalanche energy handling up to 11.25 mJ
Low Q_rr body diode	113 nC typical reverse recovery charge minimizes shoot-through risk and EMI in synchronous rectification
PowerPAK 1212-8S package	Enables 2× higher current density vs. SO-8 while maintaining compatibility with standard SMT reflow profiles
Lead (Pb)-free and halogen-free	Meets RoHS 2011/65/EU and JEDEC JS709C requirements without compromising thermal or electrical performance

Applications

High-Frequency DC/DC Converter	Synchronous Rectifier
Use Scenario: 48 V–12 V buck converter operating at 500 kHz–1 MHz in telecom power supplies. IC Role / Device Role / Timing Role: Primary-side high-side switch controlling power delivery with precise duty-cycle modulation. Use Value: Low R_DS(on) × Q_g enables high efficiency (>95%) at full load while minimizing gate driver losses and thermal stress.	Use Scenario: Secondary-side rectification in isolated LLC resonant converters for server PSUs. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce forward voltage drop and conduction loss. Use Value: V_SD = 0.81 V and Q_rr = 113 nC lower heat generation and improve light-load efficiency by 1.2–1.8%.
OR-ing / Hot-Swap Controller	Battery Protection Circuit
Use Scenario: Redundant 12 V power rail combining two hot-pluggable modules in industrial PLC backplanes. IC Role / Device Role / Timing Role: Back-to-back configured MOSFET acting as ideal diode with ultra-low forward drop. Use Value: R_DS(on) = 0.0315 Ω limits voltage drop to <315 mV at 10 A, reducing power loss and thermal derating needs.	Use Scenario: Cell-balancing and discharge path control in 4S Li-ion battery packs for portable medical devices. IC Role / Device Role / Timing Role: High-side load switch isolating battery from system during fault or sleep mode. Use Value: 150 V V_DS rating provides margin for surge transients; 100% UIS tested ensures reliability under inductive load disconnect.

High-Frequency DC/DC Converter

Synchronous Rectifier

Use Scenario: 48 V–12 V buck converter operating at 500 kHz–1 MHz in telecom power supplies.

IC Role / Device Role / Timing Role: Primary-side high-side switch controlling power delivery with precise duty-cycle modulation.

Use Value: Low R_DS(on) × Q_g enables high efficiency (>95%) at full load while minimizing gate driver losses and thermal stress.

Use Scenario: Secondary-side rectification in isolated LLC resonant converters for server PSUs.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce forward voltage drop and conduction loss.

Use Value: V_SD = 0.81 V and Q_rr = 113 nC lower heat generation and improve light-load efficiency by 1.2–1.8%.

OR-ing / Hot-Swap Controller

Battery Protection Circuit

Use Scenario: Redundant 12 V power rail combining two hot-pluggable modules in industrial PLC backplanes.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET acting as ideal diode with ultra-low forward drop.

Use Value: R_DS(on) = 0.0315 Ω limits voltage drop to <315 mV at 10 A, reducing power loss and thermal derating needs.

Use Scenario: Cell-balancing and discharge path control in 4S Li-ion battery packs for portable medical devices.

IC Role / Device Role / Timing Role: High-side load switch isolating battery from system during fault or sleep mode.

Use Value: 150 V V_DS rating provides margin for surge transients; 100% UIS tested ensures reliability under inductive load disconnect.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-GE3	R_DS(on) = 0.028 Ω @ 10 V, Q_g = 11.5 nC, same PowerPAK 1212-8S package	Higher gate charge increases driver loss at >1 MHz but offers lower conduction loss at <8 A	Select when optimizing for low-I_D conduction loss over switching frequency; verify gate driver capability for 11.5 nC load
IRFH7107TRPBF	R_DS(on) = 0.032 Ω @ 10 V, Q_g = 12.5 nC, PQFN 5×6 mm package	Larger footprint and higher Q_g limit high-frequency use; different thermal interface (exposed drain on bottom only)	Choose if existing layout uses 5×6 mm footprints or requires higher pulse current (I_DM = 120 A)

Compared with SiR626DP-T1-GE3 and IRFH7107TRPBF, SISS5710DN-T1-GE3 delivers the lowest combined switching-conduction loss at medium currents (8–20 A) and high frequencies (>500 kHz), making it optimal for space-constrained, high-efficiency DC/DC and OR-ing designs where thermal resistance and gate drive simplicity are critical.

Availability

SISS5710DN-T1-GE3 is available at Aetrix Electronics and suitable for high-frequency DC/DC converters, synchronous rectifiers, and OR-ing/hot-swap applications requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for SISS5710DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SISS5710DN-T1-GE3 belongs to Vishay's TrenchFET® Gen V power MOSFET family, engineered specifically for high-frequency, high-efficiency power conversion in telecom, computing, and industrial systems where low R_DS(on) × Q_g and robust body diode performance are essential.

FAQ

What is the maximum junction temperature rating for SISS5710DN-T1-GE3?

The SISS5710DN-T1-GE3 has an operating junction temperature range of –55 °C to +150 °C. This rating is confirmed in the Absolute Maximum Ratings table of Vishay document 62049, and the device is designed to sustain continuous operation at T_J = 150 °C when properly heatsinked. Derating curves in the datasheet show current capability reduction above T_C = 25 °C.

Does SISS5710DN-T1-GE3 support gate drive voltages below 10 V?

Yes, SISS5710DN-T1-GE3 is fully specified down to V_GS = 7.5 V, with R_DS(on) = 0.037 Ω max. at that level. Its gate threshold voltage V_GS(th) ranges from 2 V to 4 V, enabling reliable enhancement-mode operation with 5 V or 8 V logic-level drivers. However, full-rated 26.2 A current requires V_GS ≥ 10 V per the Product Summary.

Is SISS5710DN-T1-GE3 suitable for avalanche energy handling in inductive switching?

Yes, SISS5710DN-T1-GE3 is 100% UIS (Unclamped Inductive Switching) tested and rated for single-pulse avalanche energy E_AS = 11.25 mJ and current I_AS = 15 A (L = 0.1 mH). This makes it suitable for flyback and boost converters where unclamped inductive turn-off may occur, provided layout minimizes stray inductance and peak V_DS remains within 150 V.

How does the PowerPAK 1212-8S package affect PCB layout for SISS5710DN-T1-GE3?

The PowerPAK 1212-8S package of SISS5710DN-T1-GE3 requires a 3.3 mm × 3.3 mm land pattern with four drain and four source pads on the bottom side, plus a central gate pad. Vishay specifies no solder fillet at the exposed copper drain tips-reliability depends on bottom-side solder interconnection only. Manual rework is not recommended; use vapor-phase or infrared reflow per doc 73257.

What is the body diode forward voltage of SISS5710DN-T1-GE3 at 5 A?

The body diode forward voltage V_SD of SISS5710DN-T1-GE3 is 0.81 V typical and 1.1 V maximum at I_S = 5 A and T_J = 25 °C, as specified in the Drain-Source Body Diode Characteristics table. This low V_SD supports efficient synchronous rectification and OR-ing functions, especially when compared to Schottky diodes with ~0.4–0.55 V drop but higher leakage and temperature sensitivity.

SISS5710DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8S

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 7.2A (Ta), 26.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 31.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 770 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 4.1W (Ta), 54.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8S

SISS5710DN-T1-GE3 FAQ

1.How can I place an order for SISS5710DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISS5710DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISS5710DN-T1-GE3 reliable?

The price and inventory of SISS5710DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS5710DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISS5710DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS5710DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISS5710DN-T1-GE3?

SISS5710DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISS5710DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISS5710DN-T1-GE3?

For technical support, including SISS5710DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS5710DN-T1-GE3 requirements.

6.How does Aetrix verify that SISS5710DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISS5710DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS5710DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISS5710DN-T1-GE3?

All SISS5710DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS5710DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISS5710DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISS5710DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …