My Inquiry
My Account
Vishay Siliconix SISS5808DN-T1-GE3
- Part No.:
- SISS5808DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8S
- Datasheet:
-
SISS5808DN-T1-GE3.pdf
- Description:
- N-CHANNEL 80 V (D-S) MOSFET POWE
- Quantity:
- Payment:
- Shipping:
Inventory:2,964
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SISS5808DN-T1-GE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® 1212-8S package, delivering RDS(on) = 7.45 mΩ @ VGS = 10 V, Qg = 11.8 nC (typ.), and 66.4 A continuous drain current at TC = 25 °C. It serves as a high-efficiency primary-side switch or synchronous rectifier in DC/DC converters and OR-ing circuits.
For engineers reviewing the SISS5808DN-T1-GE3 datasheet, SISS5808DN-T1-GE3 pinout, SISS5808DN-T1-GE3 application, or SISS5808DN-T1-GE3 equivalent, key selection criteria include its low RDS(on) × Qoss figure-of-merit, 100% Rg and UIS tested reliability, and thermal performance with RthJC = 1.5 °C/W (typ.) for high-power density designs.
Technical Context
This MOSFET employs TrenchFET® Gen V silicon technology optimized for fast switching and minimal conduction loss in hard-switched and synchronous rectification topologies. Its gate charge profile (Qg = 11.8 nC @ 7.5 V, Qgd = 1.5 nC) supports efficient operation in 100–500 kHz DC/DC stages while maintaining low EMI via controlled dV/dt.
The device features a robust body diode with trr = 45 ns (typ.), Qrr = 45 nC (typ.), and VSD = 0.76 V (typ. @ IS = 5 A), enabling reliable reverse recovery in bidirectional power paths such as hot-swap and battery OR-ing applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Supports input rails up to 64 V DC with 25 % safety margin for transient clamping in industrial and telecom power supplies. |
| RDS(on) max @ 10 V | 7.45 mΩ - Enables ≤ 50 mW conduction loss at 40 A, critical for high-current POL converters and motor drive half-bridges. |
| Qg typ. @ 7.5 V | 11.8 nC - Reduces gate drive power and allows use of low-current drivers (e.g., < 1 A peak) without sacrificing switching speed. |
| ID cont. @ TC = 25 °C | 66.4 A - Sustains full-load current in compact 3.3 mm × 3.3 mm footprint without external heatsink under forced-air cooling. |
| RthJC max | 1.9 °C/W - Permits > 30 W dissipation with ≤ 57 °C junction rise above case, supporting high-duty-cycle operation in sealed enclosures. |
| Body diode trr | 45 ns (typ.) - Minimizes reverse recovery loss and shoot-through risk when used as freewheeling diode in synchronous buck stages. |
Pinout & Package
PowerPAK® 1212-8S is a leadless surface-mount package with exposed copper drain paddle on bottom side; dimensions 3.3 mm × 3.3 mm × 0.75 mm (max). Thermal performance relies on soldered drain pad area; no solder fillet required at singulated edge.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (S) | Source | Common source connection for internal die; electrically tied to bottom drain paddle via substrate-requires separate PCB source trace routing. |
| 5, 6, 7, 8 (D) | Drain | Internally connected to exposed copper paddle; primary thermal and current path-must be soldered to large copper pour for heat extraction. |
| G (Gate) | Control terminal | Single gate pad (Pin 1 dot location); low Rg = 1.0 Ω (max) enables stable gate drive with minimal ringing in high-dV/dt environments. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen V silicon | Delivers industry-leading RDS(on) × Qoss FOM for reduced switching + conduction loss trade-off in high-frequency SMPS. |
| 100 % Rg tested | Ensures gate resistance ≤ 1.8 Ω across lot, guaranteeing consistent turn-on/turn-off timing and driver stress in parallel configurations. |
| 100 % UIS tested | Validates ruggedness against unclamped inductive switching events up to IAS = 25 A and EAS = 31.25 mJ-critical for motor drive and solenoid control. |
| Lead (Pb)-free & halogen-free | Meets RoHS 2011/65/EU and JEDEC JS-709C requirements; compatible with standard SnAgCu reflow profiles up to 260 °C peak. |
Applications
| Server VRM Synchronous Rectifier | Industrial DC/DC Primary Switch |
|---|---|
Use Scenario: High-current, multiphase 48 V–12 V buck converter in AI server power delivery network. IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 300–500 kHz with 50–70 A per phase. Use Value: 7.45 mΩ RDS(on) reduces conduction loss by >35 % vs. legacy Gen IV MOSFETs, improving full-load efficiency to >95.2 %. | Use Scenario: Isolated flyback or active-clamp forward converter in programmable logic controller (PLC) power supply. IC Role / Device Role / Timing Role: Primary-side switching transistor handling 65 V input with 66.4 A peak surge capability. Use Value: 1.5 °C/W RthJC enables direct thermal coupling to chassis, eliminating need for discrete thermal interface material in space-constrained DIN-rail mounts. |
| Battery OR-ing Controller | BLDC Motor Phase Switch |
Use Scenario: Dual-battery redundancy system in medical portable equipment requiring seamless switchover. IC Role / Device Role / Timing Role: Back-to-back configured OR-ing switch managing 24 V battery inputs with reverse-current blocking. Use Value: Body diode VSD = 0.76 V (typ.) minimizes forward drop during transition, reducing voltage sag to < 120 mV during 20 A load step. | Use Scenario: 3-phase inverter stage in cordless power tool driving 18–24 V brushed-DC or BLDC motors. IC Role / Device Role / Timing Role: High-side or low-side phase leg switch operating at 20–40 kHz PWM with 50 A peak current. Use Value: UIS-tested ruggedness withstands motor inductive kickback up to 25 A, eliminating need for external TVS in Class II insulation systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7480TRPBF | RDS(on) = 8.2 mΩ @ 10 V; Qg = 14.2 nC; PowerSO-8 package (larger 4.9 mm × 6.0 mm footprint) | Higher gate charge increases driver loss; larger package limits board density in multi-phase VRMs. | Prefer SISS5808DN-T1-GE3 where board area < 12 mm² per switch and Qg < 13 nC is required. |
| DMTH8008LPS-13 | RDS(on) = 7.8 mΩ @ 10 V; Qg = 10.5 nC; same PowerPAK 1212-8S footprint but rated for 100 V VDS | Higher voltage rating adds cost and slightly higher Ciss; over-spec for 48 V systems but suitable for future 60 V upgrades. | Choose DMTH8008LPS-13 only if system requires 100 V breakdown margin or long-term voltage scalability. |
Compared with IRF7480TRPBF and DMTH8008LPS-13, SISS5808DN-T1-GE3 offers the lowest RDS(on) × Qoss FOM in its class and the smallest footprint among 80 V alternatives-making it optimal for thermally constrained, high-current, high-frequency power stages where layout area and switching loss are co-critical.
Availability
SISS5808DN-T1-GE3 is available at Aetrix Electronics and suitable for server VRM design, industrial DC/DC converter production, and battery management systems requiring stable component supply and guaranteed long-term sourcing.
Supply support for SISS5808DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency performance.
The SISS5808DN-T1-GE3 belongs to Vishay's TrenchFET® Gen V family, engineered specifically for high-frequency, high-current power conversion in data center, industrial automation, and battery-powered equipment where thermal density and switching efficiency are paramount.
FAQ
What is the maximum continuous drain current rating for SISS5808DN-T1-GE3 at 70 °C case temperature?
The SISS5808DN-T1-GE3 supports 53.1 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK 1212-8S package under sustained high-power operation and must be validated against actual PCB copper area and airflow in the final SISS5808DN-T1-GE3 implementation.
Does SISS5808DN-T1-GE3 have avalanche capability, and how is it rated?
Yes, SISS5808DN-T1-GE3 is 100 % tested for Unclamped Inductive Switching (UIS) with single-pulse avalanche current IAS = 25 A and energy EAS = 31.25 mJ (L = 0.1 mH). This rating ensures robustness against inductive transients in motor drive and relay-driving applications without requiring external snubbers in the SISS5808DN-T1-GE3 design.
What is the gate-source threshold voltage range for SISS5808DN-T1-GE3, and why does it matter?
The SISS5808DN-T1-GE3 has a VGS(th) range of 2.0 V to 4.0 V at ID = 250 μA. This tight threshold window ensures predictable turn-on behavior across temperature and process variation, reducing risk of partial enhancement in high-noise industrial environments-critical for reliable gate drive timing in SISS5808DN-T1-GE3-based power stages.
Can SISS5808DN-T1-GE3 be used in parallel configurations, and what validation supports this?
Yes, SISS5808DN-T1-GE3 is suitable for paralleling due to its 100 % Rg testing (Rg = 0.5–1.8 Ω) and positive temperature coefficient of RDS(on). These characteristics promote current sharing stability across multiple SISS5808DN-T1-GE3 devices in high-current modules like server VRMs or EV chargers without external ballasting resistors.
What is the recommended maximum soldering temperature for SISS5808DN-T1-GE3, and are there rework constraints?
The SISS5808DN-T1-GE3 supports peak reflow temperature of 260 °C per JEDEC J-STD-020, but manual soldering with an iron is not recommended due to its leadless PowerPAK 1212-8S construction. Rework requires precision hot-air tools with controlled ramp/soak profiles-direct contact methods risk delamination or voiding in the SISS5808DN-T1-GE3 solder joint.
SISS5808DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8S
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 18.3A (Ta), 66.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 119mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 24 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1210 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 65.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8S
SISS5808DN-T1-GE3 FAQ
1.How can I place an order for SISS5808DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SISS5808DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SISS5808DN-T1-GE3 reliable?
The price and inventory of SISS5808DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS5808DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SISS5808DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS5808DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SISS5808DN-T1-GE3?
SISS5808DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SISS5808DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SISS5808DN-T1-GE3?
For technical support, including SISS5808DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS5808DN-T1-GE3 requirements.
6.How does Aetrix verify that SISS5808DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SISS5808DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS5808DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SISS5808DN-T1-GE3?
All SISS5808DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS5808DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SISS5808DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SISS5808DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SISS5808DN-T1-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
