Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISS5810DN-T1-GE3

Name: SISS5810DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS5810DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SISS5810DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8S

Datasheet:: SISS5810DN-T1-GE3.pdf

Description:: N-CHANNEL 80 V (D-S) MOSFET 150C

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,943

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SISS5810DN-T1-GE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® 1212-8S package, with R_DS(on) = 0.010 Ω at V_GS = 10 V, Q_g = 9.2 nC (typ.), and 51 A continuous drain current at T_C = 25 °C - optimized for high-efficiency synchronous rectification and DC/DC converter primary-side switching.

For engineers reviewing the SISS5810DN-T1-GE3 datasheet, SISS5810DN-T1-GE3 pinout, SISS5810DN-T1-GE3 application, or SISS5810DN-T1-GE3 equivalent, key selection criteria include its low R_DS(on) × Q_oss figure-of-merit, 100% R_g and UIS tested reliability, and thermal performance with R_thJC = 1.9 °C/W (typ.) for high-power density designs.

Technical Context

This MOSFET employs TrenchFET® Gen V silicon technology to achieve ultra-low conduction and switching losses. Its gate charge profile (Q_g = 9.2 nC, Q_gd = 1.5 nC) and low output capacitance (C_oss = 380 pF) support fast, efficient hard-switching operation up to 1 MHz in isolated and non-isolated topologies.

The device features a robust body diode with t_rr = 44 ns (typ.) and Q_rr = 40 nC (typ.) at I_F = 10 A, enabling reliable reverse recovery in OR-ing and hot-swap applications. It is rated for 80 V V_DS, ±20 V V_GS, and operates across -55 °C to +150 °C junction temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - supports 48 V input bus systems with 20 % derating margin for transient overvoltage
R_DS(on) max @ 10 V	0.010 Ω - enables <1 W conduction loss at 10 A, critical for high-current synchronous rectifiers
Q_g typ.	9.2 nC - reduces gate drive power and allows use of lower-cost, lower-current drivers
I_D cont. @ T_C = 25 °C	51 A - supports high-output-current DC/DC converters without external heatsinking
R_thJC max.	2.4 °C/W - ensures efficient heat transfer to PCB copper or heatsink in compact layouts
V_GS(th)	2–4 V - compatible with standard 3.3 V and 5 V logic-level gate drivers
C_iss	900 pF - balances EMI control and switching speed in high-frequency SMPS designs

Pinout & Package

SISS5810DN-T1-GE3 is housed in a leadless PowerPAK® 1212-8S package (3.3 mm × 3.3 mm footprint), with exposed drain pads on the bottom side for enhanced thermal performance and dual-source/drain terminals for current sharing. The top-side marking includes polarity dot for Pin 1 identification.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications
5, 6, 7, 8	Drain (D)	Four exposed drain terminals on bottom side provide low-inductance, high-current path to PCB ground plane
G (center pad)	Gate (G)	Single center-top gate pad minimizes gate loop inductance and improves switching stability

Key Features

Feature	Design Value
TrenchFET® Gen V silicon	Delivers industry-leading R_DS(on) × Q_oss FOM for reduced switching losses in high-frequency converters
100 % R_g and UIS tested	Ensures gate robustness and avalanche energy handling (E_AS = 20 mJ) in real-world fault conditions
Low Q_gd/Q_g ratio (≈16 %)	Improves Miller immunity and enables stable operation with minimal gate resistance
Body diode t_rr = 44 ns (typ.)	Reduces reverse recovery loss and EMI in synchronous rectifier and OR-ing configurations
Lead (Pb)-free and halogen-free	Meets RoHS Directive 2011/65/EU and JEDEC JS709C material compliance requirements

Applications

Synchronous Rectification	Primary-Side Switch
Use Scenario: Secondary-side switching in isolated LLC and phase-shifted full-bridge DC/DC converters delivering 12 V/50 A output. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to minimize conduction loss and improve efficiency above 95 %. Use Value: R_DS(on) = 0.010 Ω cuts conduction loss by >60 % vs. 40 V Schottky, directly increasing full-load efficiency by 0.8–1.2 %.	Use Scenario: High-side switch in 48 V input, 12 V output buck converter operating at 500 kHz. IC Role / Device Role / Timing Role: Primary power switch controlling energy transfer into output inductor with fast turn-on/off timing. Use Value: Q_g = 9.2 nC and Q_gd = 1.5 nC enable clean 15 ns rise/fall times, reducing switching loss to <0.35 W at 10 A.
OR-ing and Hot Swap	Battery Management System
Use Scenario: Redundant 28 V power supply OR-ing in avionics subsystems requiring zero-failure failover. IC Role / Device Role / Timing Role: Back-to-back configured MOSFET acting as ideal diode with controlled turn-on/turn-off sequencing. Use Value: Body diode V_SD = 0.8–1.1 V and t_rr = 44 ns ensure low forward drop and minimal reverse recovery overshoot during switchover.	Use Scenario: Charge/discharge path switch in 3S Li-ion battery pack (12.6 V max) with protection IC supervision. IC Role / Device Role / Timing Role: High-current, low-R_DS(on) main FET controlling bidirectional current flow between battery and load/charger. Use Value: 51 A I_D rating and 80 V V_DS support 2× overvoltage margin for 12.6 V nominal, enabling safe operation during surge events.

Synchronous Rectification

Primary-Side Switch

Use Scenario: Secondary-side switching in isolated LLC and phase-shifted full-bridge DC/DC converters delivering 12 V/50 A output.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to minimize conduction loss and improve efficiency above 95 %.

Use Value: R_DS(on) = 0.010 Ω cuts conduction loss by >60 % vs. 40 V Schottky, directly increasing full-load efficiency by 0.8–1.2 %.

Use Scenario: High-side switch in 48 V input, 12 V output buck converter operating at 500 kHz.

IC Role / Device Role / Timing Role: Primary power switch controlling energy transfer into output inductor with fast turn-on/off timing.

Use Value: Q_g = 9.2 nC and Q_gd = 1.5 nC enable clean 15 ns rise/fall times, reducing switching loss to <0.35 W at 10 A.

OR-ing and Hot Swap

Battery Management System

Use Scenario: Redundant 28 V power supply OR-ing in avionics subsystems requiring zero-failure failover.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET acting as ideal diode with controlled turn-on/turn-off sequencing.

Use Value: Body diode V_SD = 0.8–1.1 V and t_rr = 44 ns ensure low forward drop and minimal reverse recovery overshoot during switchover.

Use Scenario: Charge/discharge path switch in 3S Li-ion battery pack (12.6 V max) with protection IC supervision.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) main FET controlling bidirectional current flow between battery and load/charger.

Use Value: 51 A I_D rating and 80 V V_DS support 2× overvoltage margin for 12.6 V nominal, enabling safe operation during surge events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7759L2TRPBF	R_DS(on) = 0.011 Ω @ 10 V; Q_g = 11.5 nC; PowerSO-8 package (larger footprint)	Higher gate charge increases driver loss; larger thermal resistance (R_thJC = 3.0 °C/W) limits power density	Prefer SISS5810DN-T1-GE3 where board space and thermal performance are constrained
DMTH8006LPS-13	R_DS(on) = 0.0095 Ω @ 10 V; Q_g = 10.8 nC; PowerPAK SO-8L package (different pinout)	Lower R_DS(on) but higher Q_g; not pin-compatible - requires PCB redesign	Select SISS5810DN-T1-GE3 for drop-in replacement in existing PowerPAK 1212-8S layouts

Compared with IRF7759L2TRPBF and DMTH8006LPS-13, SISS5810DN-T1-GE3 delivers superior R_DS(on) × Q_g FOM (0.092 Ω·nC), smallest footprint, and lowest R_thJC, making it optimal for space-constrained, thermally demanding high-efficiency power stages.

Availability

SISS5810DN-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, primary-side switching, and OR-ing applications requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for SISS5810DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SISS5810DN-T1-GE3 belongs to Vishay's TrenchFET® Gen V power MOSFET family, engineered specifically for high-frequency, high-current DC/DC conversion and synchronous rectification in server, telecom, and industrial power supplies.

FAQ

What is the maximum continuous drain current rating for SISS5810DN-T1-GE3 at case temperature of 70 °C?

The SISS5810DN-T1-GE3 supports 40.8 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be validated against actual PCB layout and airflow conditions in the final design. SISS5810DN-T1-GE3 maintains R_DS(on) stability across this range, ensuring predictable conduction loss.

Does SISS5810DN-T1-GE3 require a gate resistor for stable switching in a 500 kHz buck converter?

SISS5810DN-T1-GE3 can operate with minimal external gate resistance (≤1 Ω) due to its low Q_gd (1.5 nC) and optimized gate structure. In a 500 kHz buck converter, a 0.5–1.0 Ω resistor typically suffices to dampen ringing while preserving fast 4–8 ns rise time. SISS5810DN-T1-GE3's low C_iss/C_oss ratio further enhances controllability without compromising EMI performance.

Is SISS5810DN-T1-GE3 suitable for use in a 48 V automotive DC/DC module?

SISS5810DN-T1-GE3 is rated for 80 V V_DS, providing adequate margin for 48 V automotive systems with load-dump transients (up to 60–65 V). However, it is not AEC-Q101 qualified; for automotive-grade deployment, SISS5810DN-T1-GE3 must undergo system-level qualification per OEM requirements. Its thermal performance (R_thJC = 1.9 °C/W) supports sustained operation in under-hood environments when properly mounted.

How does the body diode performance of SISS5810DN-T1-GE3 compare to standard Schottky diodes in OR-ing applications?

SISS5810DN-T1-GE3's body diode exhibits V_SD = 0.8–1.1 V at 5 A and t_rr = 44 ns, offering lower forward voltage than most 45 V Schottkys above 3 A while avoiding leakage and temperature sensitivity issues. In OR-ing, this translates to lower conduction loss and faster, more predictable reverse recovery than discrete diodes - a key advantage SISS5810DN-T1-GE3 delivers in redundant power paths.

Can SISS5810DN-T1-GE3 be reflow soldered using standard lead-free profiles?

Yes, SISS5810DN-T1-GE3 is qualified for lead-free reflow per J-STD-020, with peak temperature up to 260 °C. Its PowerPAK 1212-8S package requires adherence to Vishay's recommended profile (document 73257), including controlled ramp rates and soak time, to ensure void-free solder joints on the exposed drain pads. Manual soldering with an iron is not recommended due to thermal mass and leadless construction.

SISS5810DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen V

Package/Case:: PowerPAK® 1212-8S

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 13.9A (Ta), 51A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 900 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 3.9W (Ta), 52W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8S

SISS5810DN-T1-GE3 FAQ

1.How can I place an order for SISS5810DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISS5810DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISS5810DN-T1-GE3 reliable?

The price and inventory of SISS5810DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS5810DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISS5810DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS5810DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISS5810DN-T1-GE3?

SISS5810DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISS5810DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISS5810DN-T1-GE3?

For technical support, including SISS5810DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS5810DN-T1-GE3 requirements.

6.How does Aetrix verify that SISS5810DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISS5810DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS5810DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISS5810DN-T1-GE3?

All SISS5810DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS5810DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISS5810DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISS5810DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …