Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISS588DN-T1-BE3

Name: SISS588DN-T1-BE3
Brand: Vishay Siliconix
SKU: SISS588DN-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SISS588DN-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8S

Datasheet:: SISS588DN-T1-BE3.pdf

Description:: N-CHANNEL 80 V (D-S) MOSFET 150

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,739

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SISS588DN-T1-BE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® 1212-8S package, delivering R_DS(on) = 8.0 mΩ @ V_GS = 10 V, Q_g = 14.2 nC (typ.), and continuous drain current I_D = 58.1 A at T_C = 25 °C. It serves as a high-efficiency primary-side switch or synchronous rectifier in DC/DC converters and OR-ing circuits.

For engineers reviewing the SISS588DN-T1-BE3 datasheet, SISS588DN-T1-BE3 pinout, SISS588DN-T1-BE3 application, or SISS588DN-T1-BE3 equivalent, key selection criteria include its low R_DS(on) × Q_oss figure-of-merit, 100% R_g and UIS tested reliability, and thermal performance with R_thJC = 2.2 °C/W max for high-power density designs.

Technical Context

This MOSFET employs TrenchFET® Gen V silicon technology optimized for switching efficiency in high-frequency power conversion. Its gate charge profile (Q_g = 14.2 nC typ. @ 7.5 V, Q_gd = 2.1 nC) enables fast turn-on/turn-off with low drive loss, while C_iss = 1380 pF and C_oss = 390 pF support stable operation under hard-switching conditions.

The device features a robust body diode with t_rr = 36 ns (typ.), Q_rr = 32 nC, and V_SD = 0.78 V @ I_S = 5 A, making it suitable for synchronous rectification where reverse recovery behavior directly impacts system efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for primary-side switch applications up to 48 V input bus systems with margin.
R_DS(on) max @ 10 V	8.0 mΩ - Enables <1.5 W conduction loss at 40 A, critical for thermally constrained DC/DC modules.
Q_g typ. @ 7.5 V	14.2 nC - Low gate charge reduces driver power and allows use of smaller gate drivers in space-constrained designs.
I_D continuous @ T_C = 25 °C	58.1 A - Supports high-current output stages without external heatsinking when mounted on 1"×1" FR4 board.
R_thJC max	2.2 °C/W - Enables direct thermal coupling to PCB copper or heatsink for efficient junction-to-case heat transfer.
t_rr typ.	36 ns - Fast body diode recovery minimizes switching loss and voltage overshoot during synchronous rectification.

Pinout & Package

SISS588DN-T1-BE3 uses the leadless PowerPAK® 1212-8S package (3.3 mm × 3.3 mm), with exposed drain pads on bottom side for thermal and electrical connection. The top-side terminals are arranged in dual-row configuration: pins 1–4 source, pins 5–8 drain, pin 2 gate.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection; pins 1–4 are internally tied and provide low-inductance return path for high di/dt currents.
2	Gate (G)	Single gate input; pin 2 is dedicated gate terminal-no shared pin with source or drain.
5, 6, 7, 8	Drain (D)	Parallel drain connections; pins 5–8 are internally connected to the die drain and serve as main power output and thermal interface.

Key Features

Feature	Design Value
TrenchFET® Gen V silicon	Delivers industry-leading R_DS(on) × Q_oss FOM for reduced switching + conduction loss trade-off in 500 kHz–1 MHz converters.
100% R_g and UIS tested	Ensures gate resistance consistency and ruggedness against unclamped inductive switching stress in motor drive and DC/DC primary-side operation.
Low Q_gd/Q_g ratio (≈15%)	Improves Miller immunity and enables stable operation with moderate gate resistors in high dv/dt environments.
Exposed drain thermal pad	Provides direct thermal path to PCB ground plane, achieving R_thJA = 21 °C/W (typ.) on 1"×1" FR4 with 2 oz Cu.

Applications

Server VRM Synchronous Rectifier	Industrial DC/DC Primary Switch
Use Scenario: High-current, high-efficiency 48 V–12 V buck converter in AI server power delivery network. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve full-load efficiency. Use Value: 8.0 mΩ R_DS(on) cuts rectifier loss by >60% vs. 40 V Schottky, enabling >95% peak efficiency at 100 A output.	Use Scenario: 24 V input, 300 kHz flyback or active clamp forward converter in programmable logic controller (PLC) power supply. IC Role / Device Role / Timing Role: Primary-side switching transistor handling repetitive 50 A peak drain current with 80 V blocking margin. Use Value: 14.2 nC Q_g and 36 ns t_rr minimize switching loss and EMI generation, supporting compact magnetics and lower filter cost.
Hot-Swap OR-ing Circuit	Battery Protection Switch
Use Scenario: Redundant 12 V power rail OR-ing in telecom shelf with automatic fault isolation. IC Role / Device Role / Timing Role: Low-side OR-ing FET controlling power path direction and enabling seamless switchover between supplies. Use Value: Ultra-low R_DS(on) ensures <50 mV forward drop at 30 A, minimizing voltage mismatch and preventing backfeed during hot insertion.	Use Scenario: 3S Li-ion battery pack protection circuit requiring overcurrent and short-circuit cutoff. IC Role / Device Role / Timing Role: High-side load switch isolating battery from system during fault conditions with fast turn-off capability. Use Value: 25 A single-pulse avalanche rating (IAS) and 31.25 mJ EAS enable reliable energy absorption during short-circuit events without failure.

Server VRM Synchronous Rectifier

Industrial DC/DC Primary Switch

Use Scenario: High-current, high-efficiency 48 V–12 V buck converter in AI server power delivery network.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve full-load efficiency.

Use Value: 8.0 mΩ R_DS(on) cuts rectifier loss by >60% vs. 40 V Schottky, enabling >95% peak efficiency at 100 A output.

Use Scenario: 24 V input, 300 kHz flyback or active clamp forward converter in programmable logic controller (PLC) power supply.

IC Role / Device Role / Timing Role: Primary-side switching transistor handling repetitive 50 A peak drain current with 80 V blocking margin.

Use Value: 14.2 nC Q_g and 36 ns t_rr minimize switching loss and EMI generation, supporting compact magnetics and lower filter cost.

Hot-Swap OR-ing Circuit

Battery Protection Switch

Use Scenario: Redundant 12 V power rail OR-ing in telecom shelf with automatic fault isolation.

IC Role / Device Role / Timing Role: Low-side OR-ing FET controlling power path direction and enabling seamless switchover between supplies.

Use Value: Ultra-low R_DS(on) ensures <50 mV forward drop at 30 A, minimizing voltage mismatch and preventing backfeed during hot insertion.

Use Scenario: 3S Li-ion battery pack protection circuit requiring overcurrent and short-circuit cutoff.

IC Role / Device Role / Timing Role: High-side load switch isolating battery from system during fault conditions with fast turn-off capability.

Use Value: 25 A single-pulse avalanche rating (IAS) and 31.25 mJ EAS enable reliable energy absorption during short-circuit events without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR870DP-T1-GE3	R_DS(on) = 7.0 mΩ @ 10 V; Q_g = 21.5 nC; PowerPAK® 8x8 package (larger footprint)	Higher current rating (70 A) but larger package limits use in ultra-dense layouts	Choose for higher I_D headroom where board area permits; not pin-compatible.
IRL8726PBF	R_DS(on) = 7.2 mΩ @ 10 V; Q_g = 27 nC; TO-220AB package (through-hole)	Requires through-hole mounting and external heatsink; unsuitable for fully SMT designs	Choose only if legacy TO-220 mechanical integration or manual rework is required.

Compared with SiR870DP-T1-GE3 and IRL8726PBF, SISS588DN-T1-BE3 offers optimal balance of low R_DS(on), minimal Q_g, and compact 3.3 mm × 3.3 mm footprint-making it preferred for space-constrained, high-frequency, high-efficiency SMT power stages where thermal performance and gate drive simplicity are critical.

Availability

SISS588DN-T1-BE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, hot-swap OR-ing circuits, and battery management systems requiring stable component supply and consistent parametric performance across production lots.

Supply support for SISS588DN-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency silicon solutions.

The SISS588DN-T1-BE3 belongs to Vishay's TrenchFET® Gen V power MOSFET family, engineered specifically for high-frequency, high-density power conversion in datacenter, industrial, and automotive auxiliary systems.

FAQ

What is the maximum continuous drain current rating for SISS588DN-T1-BE3 at case temperature of 70 °C?

The maximum continuous drain current for SISS588DN-T1-BE3 is 46.5 A when the case temperature (T_C) is maintained at 70 °C. This rating reflects thermal derating due to reduced heat dissipation capacity at elevated temperatures and is specified in the Absolute Maximum Ratings table. SISS588DN-T1-BE3 must be mounted on appropriate PCB copper area or heatsink to sustain this current reliably.

Does SISS588DN-T1-BE3 have avalanche capability, and what are the rated parameters?

Yes, SISS588DN-T1-BE3 is rated for single-pulse avalanche with I_AS = 25 A (L = 0.1 mH) and E_AS = 31.25 mJ. These values are validated per JEDEC standard test methods and confirm ruggedness under unclamped inductive switching stress. SISS588DN-T1-BE3 leverages TrenchFET® Gen V process enhancements to ensure repeatable avalanche performance without degradation.

What is the gate-source threshold voltage range for SISS588DN-T1-BE3, and how does it affect drive requirements?

The gate-source threshold voltage (V_GS(th)) for SISS588DN-T1-BE3 is specified from 2.0 V to 4.0 V at I_D = 250 μA. This range ensures reliable turn-on with standard 5 V or 7.5 V gate drivers while maintaining noise immunity. SISS588DN-T1-BE3 achieves full enhancement at V_GS ≥ 7.5 V, where R_DS(on) drops to 9.3 mΩ-critical for low-loss operation in high-current applications.

How does the PowerPAK® 1212-8S package of SISS588DN-T1-BE3 impact thermal design?

The PowerPAK® 1212-8S package of SISS588DN-T1-BE3 features an exposed drain pad that serves as both electrical connection and primary thermal path. With R_thJC = 2.2 °C/W (max), SISS588DN-T1-BE3 requires direct soldering to a large PCB copper pour or thermal via array for effective heat extraction. Its leadless construction eliminates wirebond thermal resistance but mandates strict reflow profile adherence per Vishay doc#73257.

Is SISS588DN-T1-BE3 suitable for synchronous rectification in 48 V to 12 V buck converters?

Yes, SISS588DN-T1-BE3 is explicitly recommended for synchronous rectification in high-current buck converters, including 48 V to 12 V VRMs. Its low R_DS(on) (8.0 mΩ), fast body diode (t_rr = 36 ns, Q_rr = 32 nC), and low Q_g (14.2 nC) minimize both conduction and switching losses. SISS588DN-T1-BE3 has been characterized in such topologies and supports >95% efficiency at 100 A output in reference designs.

SISS588DN-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen V

Package/Case:: PowerPAK® 1212-8S

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 16.9A (Ta), 58.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 28.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1380 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 4.8W (Ta), 56.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8S

SISS588DN-T1-BE3 FAQ

1.How can I place an order for SISS588DN-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISS588DN-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISS588DN-T1-BE3 reliable?

The price and inventory of SISS588DN-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS588DN-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SISS588DN-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS588DN-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISS588DN-T1-BE3?

SISS588DN-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISS588DN-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISS588DN-T1-BE3?

For technical support, including SISS588DN-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS588DN-T1-BE3 requirements.

6.How does Aetrix verify that SISS588DN-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SISS588DN-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS588DN-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SISS588DN-T1-BE3?

All SISS588DN-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS588DN-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISS588DN-T1-BE3 part is unused and in its original packaging.

Return procedure for SISS588DN-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …