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Vishay Siliconix SISS588DN-T1-GE3
- Part No.:
- SISS588DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8S
- Datasheet:
-
SISS588DN-T1-GE3.pdf
- Description:
- N-CHANNEL 80 V (D-S) MOSFET POWE
- Quantity:
- Payment:
- Shipping:
Inventory:6,000
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Product details
Overview
SISS588DN-T1-GE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® Gen V power MOSFET in a PowerPAK® 1212-8S package, delivering RDS(on) = 8.0 mΩ at VGS = 10 V, Qg = 14.2 nC (typ.), and continuous drain current ID = 58.1 A at TC = 25 °C - optimized for high-efficiency synchronous rectification and DC/DC converter primary-side switching.
For engineers reviewing the SISS588DN-T1-GE3 datasheet, SISS588DN-T1-GE3 pinout, SISS588DN-T1-GE3 application, or SISS588DN-T1-GE3 equivalent, key selection criteria include its low RDS(on) × Qoss figure-of-merit, 100 % Rg and UIS tested reliability, and thermal performance with RthJC = 1.8 °C/W (typ.) for high-power-density board-level designs.
Technical Context
This MOSFET employs TrenchFET® Gen V silicon technology to minimize conduction and switching losses simultaneously, with gate charge profile tuned specifically for lowest RDS(on) × Qoss FOM. Its dynamic parameters - Ciss = 1380 pF, Coss = 390 pF, Crss = 6.6 pF at VDS = 40 V - support fast, low-loss hard-switching operation in high-frequency power stages.
The device features a robust body diode with trr = 36 ns (typ.), Qrr = 32 nC (typ.), and VSD = 0.78 V (typ. at IS = 5 A), enabling reliable reverse recovery in OR-ing and bidirectional power path applications without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - supports 48 V input bus systems with 20 % derating margin for transient overvoltage handling |
| RDS(on) max @ 10 V | 8.0 mΩ - enables <1.5 W conduction loss at 40 A, critical for thermally constrained 12–48 V DC/DC converters |
| Qg typ. @ 7.5 V | 14.2 nC - reduces gate drive power and allows use of lower-current drivers in compact isolated gate-drive designs |
| ID continuous @ TC = 25 °C | 58.1 A - sustains high output current in power supply primary switches without forced airflow or heatsinking |
| RthJC max | 2.2 °C/W - ensures efficient heat transfer to PCB copper or external heatsink, supporting >40 W dissipation at ΔT = 90 °C |
| VGS(th) | 2–4 V - compatible with standard 3.3 V and 5 V logic-level controllers, enabling direct microcontroller drive in low-voltage control loops |
| Body diode VSD | 0.78 V (typ. at 5 A) - lowers forward drop vs. discrete Schottky in OR-ing, reducing standby power loss by ~15 % |
Pinout & Package
PowerPAK® 1212-8S is a leadless, surface-mount package with exposed-drain thermal pad (8 mm² bottom-side copper area) and 0.65 mm pitch. Dimensions: 3.3 mm × 3.3 mm × 0.75 mm (L × W × H). Pin 1 marked by dot; top-side terminals are source (pins 1–4), gate (pin 5), and drain (pins 6–8).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–4 (S) | Source | Low-inductance parallel connection for return path integrity; ties directly to ground plane for EMI reduction |
| 5 (G) | Gate | Single-point gate connection minimizes ringing; requires local 10 nF gate-to-source capacitor for stability |
| 6–8 (D) | Drain | Exposed copper thermal pad (pins 6–8) serves dual role: high-current drain path and primary thermal interface to PCB |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen V silicon | Enables simultaneous optimization of RDS(on) and Qg, achieving industry-leading RDS(on) × Qoss FOM for 80 V class |
| 100 % Rg and UIS tested | Guarantees gate resistance consistency (<1.8 Ω max) and ruggedness against unclamped inductive switching stress up to 25 A |
| Low Qgd/Qg ratio | Qgd = 2.1 nC / Qg = 14.2 nC → 14.8 % - suppresses Miller-induced shoot-through in half-bridge configurations |
| Enhanced body diode softness | ta/tb = 18 ns / 18 ns - balanced reverse recovery minimizes voltage overshoot during commutation in synchronous rectifiers |
| Lead (Pb)-free and halogen-free | Meets RoHS 2011/65/EU and JEDEC JS709C requirements without compromising thermal or electrical performance |
Applications
| Server VRM Synchronous Rectifier | Industrial 48 V Input DC/DC Converter |
|---|---|
Use Scenario: High-current, high-frequency (300–600 kHz) buck converter output stage in AI accelerator server power delivery. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 95 % at 50–100 A load. Use Value: 8.0 mΩ RDS(on) cuts I²R loss by >60 % vs. 40 V Schottky, enabling 2–3 °C junction temperature reduction at full load. | Use Scenario: Primary-side switch in isolated flyback or active-clamp forward converter for factory automation PLC power supplies. IC Role / Device Role / Timing Role: Main switching element handling 80 V bus transients and 58 A peak currents during burst-mode operation. Use Value: 100 % UIS tested rating supports reliable operation under 25 A inductive fault conditions without derating. |
| Hot-Swap OR-ing Controller | Battery Management System (BMS) Protection |
Use Scenario: Back-to-back configuration in redundant 12–24 V power distribution units for telecom base stations. IC Role / Device Role / Timing Role: Bidirectional OR-ing switch enabling seamless switchover between two independent power sources. Use Value: Body diode VSD = 0.78 V (typ.) and trr = 36 ns allow fast reverse recovery without external snubbers, cutting board space by 30 %. | Use Scenario: Charge/discharge path protection switch in 16-cell Li-ion battery packs (nominal 57.6 V, max 67.2 V). IC Role / Device Role / Timing Role: High-side load switch controlling main pack current flow with overcurrent and short-circuit protection. Use Value: 80 V VDS rating provides 10 V margin above pack OVP threshold, ensuring safe operation during regenerative braking events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7480TRPBF | RDS(on) = 9.0 mΩ @ 10 V; Qg = 16.5 nC; PowerSO-8 package (larger footprint, higher RthJA) | Higher conduction loss and slower switching limit efficiency in >400 kHz designs; less suitable for ultra-thin modules | Prefer SISS588DN-T1-GE3 where board area and thermal resistance are constrained |
| DMTH8006LPS-13 | RDS(on) = 6.5 mΩ @ 10 V but Qg = 24.5 nC; SO-8FL package; higher gate charge increases driver loss | Lower RDS(on) benefits low-frequency operation, but elevated Qg degrades high-frequency efficiency and EMI performance | Choose SISS588DN-T1-GE3 when optimizing for combined conduction + switching loss in 300–1000 kHz topologies |
Compared with IRF7480TRPBF and DMTH8006LPS-13, SISS588DN-T1-GE3 delivers superior RDS(on) × Qoss FOM and lower RthJC, making it optimal for thermally dense, high-frequency power stages where both conduction and switching losses must be minimized simultaneously.
Availability
SISS588DN-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial 48 V DC/DC converters, hot-swap OR-ing modules, and battery management systems requiring stable component supply and long-term production continuity.
Supply support for SISS588DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SISS588DN-T1-GE3 belongs to Vishay's TrenchFET® Gen V power MOSFET family, engineered for high-frequency, high-efficiency power conversion in datacenter, industrial, and automotive subsystems where low RDS(on) × Qg and rugged UIS performance are critical.
FAQ
What is the maximum continuous drain current rating for SISS588DN-T1-GE3 at case temperature of 70 °C?
The SISS588DN-T1-GE3 supports a continuous drain current of 46.5 A at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and is validated under steady-state conditions with proper PCB copper area per Vishay's recommended layout guidelines.
Does SISS588DN-T1-GE3 require a gate resistor for stable switching in a half-bridge configuration?
Yes, SISS588DN-T1-GE3 benefits from an external gate resistor (typically 1–5 Ω) to dampen ringing and control dV/dt during turn-on/turn-off. Its low Qgd/Qg ratio (14.8 %) improves Miller immunity, but gate resistance remains essential to prevent oscillation and ensure clean transitions in high-speed half-bridge applications using the SISS588DN-T1-GE3.
Can SISS588DN-T1-GE3 be used in place of a Schottky diode for synchronous rectification?
Yes, SISS588DN-T1-GE3 is explicitly designed for synchronous rectification, with its low RDS(on) (8.0 mΩ) and optimized body diode (VSD = 0.78 V, trr = 36 ns) enabling superior efficiency vs. Schottky diodes in 12–48 V output stages. Unlike Schottky devices, the SISS588DN-T1-GE3 supports bidirectional current flow and withstands higher reverse voltages without leakage degradation.
What is the thermal resistance from junction to case (RthJC) for SISS588DN-T1-GE3, and how does it impact heatsink design?
The SISS588DN-T1-GE3 has a typical junction-to-case thermal resistance of 1.8 °C/W, with a maximum of 2.2 °C/W. This low value enables efficient heat transfer from the die to the PCB copper or external heatsink. When designing thermal management, this RthJC allows calculation of allowable power dissipation - e.g., at ΔT = 90 °C, up to 50 W can be safely dissipated - making heatsink sizing more compact than with higher-RthJC alternatives.
Is SISS588DN-T1-GE3 suitable for automotive applications such as 48 V mild-hybrid systems?
SISS588DN-T1-GE3 meets AEC-Q101 stress test requirements per Vishay qualification reports and operates across –55 °C to +150 °C junction temperature range. Its 80 V VDS, low RDS(on), and robust UIS rating make it suitable for 48 V mild-hybrid DC/DC converters and motor control inverters - provided system-level validation confirms compliance with ISO 16750 and EMC requirements for the specific vehicle architecture using SISS588DN-T1-GE3.
SISS588DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen V
- Package/Case:
- PowerPAK® 1212-8S
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 16.9A (Ta), 58.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 28.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1380 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 4.8W (Ta), 56.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8S
SISS588DN-T1-GE3 FAQ
1.How can I place an order for SISS588DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SISS588DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SISS588DN-T1-GE3 reliable?
The price and inventory of SISS588DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS588DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SISS588DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS588DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SISS588DN-T1-GE3?
SISS588DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SISS588DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SISS588DN-T1-GE3?
For technical support, including SISS588DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS588DN-T1-GE3 requirements.
6.How does Aetrix verify that SISS588DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SISS588DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS588DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SISS588DN-T1-GE3?
All SISS588DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS588DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SISS588DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SISS588DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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