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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISS64DN-T1-GE3

Name: SISS64DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS64DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISS64DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8S

Datasheet:: SISS64DN-T1-GE3.pdf

Description:: MOSFET N-CH 30V 40A PPAK1212-8S

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Product details

Overview

SISS64DN-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET in a PowerPAK® 1212-8S package, delivering R_DS(on) = 2.10 mΩ at V_GS = 10 V and 2.86 mΩ at V_GS = 4.5 V, with 40 A continuous drain current and optimized gate charge (Q_g = 21 nC typ. at 4.5 V) for high-efficiency synchronous buck converters and VRMs.

For engineers reviewing the SISS64DN-T1-GE3 datasheet, SISS64DN-T1-GE3 pinout, SISS64DN-T1-GE3 application, or SISS64DN-T1-GE3 equivalent, this device is selected for low-loss power switching in space-constrained DC/DC modules where thermal performance (R_thJC = 1.7 °C/W typ.) and robust UIS testing are critical.

Technical Context

This MOSFET employs trench-based silicon architecture with tightly controlled Q_gd/Q_gs ratio (0.024–0.048) to minimize switching loss during hard commutation. Its gate threshold voltage (V_GS(th) = 1.1–2.2 V) enables reliable 4.5 V logic-level drive while maintaining low leakage (I_DSS ≤ 1 μA at 30 V).

The device integrates a fast body diode (t_rr = 40–80 ns, Q_rr = 34–70 nC) with low forward voltage (V_SD = 0.73–1.2 V at 10 A), supporting efficient synchronous rectification without external Schottky diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in industrial DC/DC systems
R_DS(on) @ 10 V	2.10 mΩ max - Enables <1 W conduction loss at 20 A, critical for high-current VRM phases
R_DS(on) @ 4.5 V	2.86 mΩ max - Ensures stable on-resistance under typical 5 V controller gate drive
Q_g	21 nC typ. @ 4.5 V - Reduces gate driver power demand and switching transition time in MHz-range converters
I_D (cont.)	40 A @ T_C = 25 °C - Supports high-current load switching without forced air cooling on standard PCBs
R_thJC	1.7 °C/W typ. - Allows direct thermal coupling to heatsink or copper pour for >40 W dissipation capability
Body diode t_rr	40–80 ns - Limits reverse recovery loss and EMI in synchronous rectifier operation

Pinout & Package

PowerPAK® 1212-8S is a leadless surface-mount package measuring 3.3 mm × 3.3 mm × 0.75 mm with exposed drain paddle on bottom side. The top-side terminals are arranged in two rows of four pins; pins 1–4 are source (S), pin 5 is gate (G), and pins 6–8 are drain (D). No solder fillet required at exposed copper tip per Vishay specification.

Pin/Terminal	Circuit Role	Design Meaning
1–4	Source (S)	Low-inductance parallel connection point for return path; ties directly to PCB ground plane
5	Gate (G)	High-impedance control input requiring <1 Ω series resistance to damp ringing during fast switching
6–8	Drain (D)	High-current output node connected to internal die backside via exposed copper paddle; primary thermal path

Key Features

Feature	Design Value
TrenchFET® Gen IV process	Enables sub-3 mΩ R_DS(on) at 30 V with reduced cell pitch and lower gate charge versus prior generations
100 % R_g and UIS tested	Guarantees gate resistance consistency (0.2–1.6 Ω) and single-pulse avalanche ruggedness (E_AS = 45 mJ)
Optimized Q_gd/Q_gs ratio	0.024–0.048 minimizes Miller plateau duration, improving dV/dt immunity and reducing turn-off energy
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E material definitions

Applications

Synchronous Buck Converter	VRM for CPU/GPU
Use Scenario: High-frequency (500 kHz–1 MHz), multiphase step-down converter supplying core voltage to modern processors. IC Role / Device Role / Timing Role: Low-side switch in synchronous rectification topology, operating with 4.5 V gate drive from integrated PWM controller. Use Value: 2.86 mΩ R_DS(on) at 4.5 V ensures <0.5 W conduction loss at 15 A, enabling >95 % efficiency at full load.	Use Scenario: Voltage regulator module on server motherboard delivering 0.8–1.2 V at up to 40 A per phase. IC Role / Device Role / Timing Role: High-current power switch handling continuous 40 A drain current with minimal thermal rise on 1 oz. copper PCB. Use Value: 1.7 °C/W R_thJC allows junction temperature rise of only ~68 °C at 40 A, staying within 150 °C limit without heatsink.
High Power Density DC/DC	Load Switching in Telecom PSU
Use Scenario: Compact 12 V–1 V DC/DC module for AI accelerator cards with strict board area constraints. IC Role / Device Role / Timing Role: Primary power FET in 3.3 mm × 3.3 mm footprint, replacing larger SO-8 or PowerPAK 5x6 devices. Use Value: PowerPAK 1212-8S package reduces layout area by 55 % vs. SO-8 while maintaining same current rating and thermal performance.	Use Scenario: Hot-swap and inrush current control in 48 V telecom power supply outputs. IC Role / Device Role / Timing Role: Single N-channel load switch configured with external gate resistor for controlled slew rate and fault protection. Use Value: 30 V V_DS rating provides 2× margin over 48 V nominal rail, and 100 μs pulsed I_DM = 100 A supports short-circuit withstand.

Synchronous Buck Converter

VRM for CPU/GPU

Use Scenario: High-frequency (500 kHz–1 MHz), multiphase step-down converter supplying core voltage to modern processors.

IC Role / Device Role / Timing Role: Low-side switch in synchronous rectification topology, operating with 4.5 V gate drive from integrated PWM controller.

Use Value: 2.86 mΩ R_DS(on) at 4.5 V ensures <0.5 W conduction loss at 15 A, enabling >95 % efficiency at full load.

Use Scenario: Voltage regulator module on server motherboard delivering 0.8–1.2 V at up to 40 A per phase.

IC Role / Device Role / Timing Role: High-current power switch handling continuous 40 A drain current with minimal thermal rise on 1 oz. copper PCB.

Use Value: 1.7 °C/W R_thJC allows junction temperature rise of only ~68 °C at 40 A, staying within 150 °C limit without heatsink.

High Power Density DC/DC

Load Switching in Telecom PSU

Use Scenario: Compact 12 V–1 V DC/DC module for AI accelerator cards with strict board area constraints.

IC Role / Device Role / Timing Role: Primary power FET in 3.3 mm × 3.3 mm footprint, replacing larger SO-8 or PowerPAK 5x6 devices.

Use Value: PowerPAK 1212-8S package reduces layout area by 55 % vs. SO-8 while maintaining same current rating and thermal performance.

Use Scenario: Hot-swap and inrush current control in 48 V telecom power supply outputs.

IC Role / Device Role / Timing Role: Single N-channel load switch configured with external gate resistor for controlled slew rate and fault protection.

Use Value: 30 V V_DS rating provides 2× margin over 48 V nominal rail, and 100 μs pulsed I_DM = 100 A supports short-circuit withstand.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-GE3	R_DS(on) = 2.35 mΩ @ 10 V; higher Q_g (27 nC @ 4.5 V); same PowerPAK 1212-8S package	Marginally higher conduction loss but identical footprint and thermal behavior	Preferred when tighter V_GS(th) distribution (1.2–1.8 V) is needed for gate drive margin
IRLHS6282TRPBF	R_DS(on) = 2.9 mΩ @ 4.5 V; Q_g = 23 nC; PowerPAK SC-70-6L package (smaller, lower current)	Lower I_D rating (16 A) limits use to sub-20 A loads; not drop-in due to different pinout and size	Selected only for ultra-compact designs where 16 A maximum current suffices and board area is more constrained than thermal budget

Compared with SiR626DP-T1-GE3 and IRLHS6282TRPBF, SISS64DN-T1-GE3 offers the lowest R_DS(on) at 4.5 V among 30 V PowerPAK 1212-8S devices, making it optimal for high-current, thermally limited synchronous rectifiers where conduction loss dominates total loss.

Availability

SISS64DN-T1-GE3 is available at Aetrix Electronics and suitable for synchronous buck converters, VRMs, and high-density DC/DC modules requiring stable component supply and consistent parametric performance across production lots.

Supply support for SISS64DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for industrial and computing markets.

The SISS64DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-frequency, high-current DC/DC conversion in data center, telecom, and AI hardware where low R_DS(on), fast switching, and thermal efficiency are mandatory.

FAQ

What is the maximum continuous drain current rating for SISS64DN-T1-GE3 at 70 °C case temperature?

The SISS64DN-T1-GE3 supports 40 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects derating from the 40 A value at 25 °C case temperature and is validated by Vishay's thermal design model using R_thJC = 1.7 °C/W and T_J(max) = 150 °C. The SISS64DN-T1-GE3 maintains full current capability up to 70 °C case without additional heatsinking.

Does SISS64DN-T1-GE3 require a gate driver with negative turn-off capability?

No, SISS64DN-T1-GE3 does not require negative turn-off drive. Its gate-source voltage rating is +20 V / –16 V, and typical gate drive uses 0 V to 4.5 V or 10 V. The SISS64DN-T1-GE3 operates reliably with standard unipolar gate drivers, and its low Q_gd (2.7 nC typ.) minimizes Miller-induced shoot-through risk even without active pull-down.

Is SISS64DN-T1-GE3 suitable for avalanche energy handling in inductive switching applications?

Yes, SISS64DN-T1-GE3 is 100 % UIS (Unclamped Inductive Switching) tested with E_AS = 45 mJ at T_J = 25 °C. This confirms its ability to absorb inductive energy during hard-switching events such as synchronous rectifier freewheeling or motor drive phase transitions. The SISS64DN-T1-GE3 is rated for single-pulse avalanche current I_AS = 30 A, making it appropriate for non-repetitive inductive fault conditions.

What is the recommended PCB pad layout for SISS64DN-T1-GE3's PowerPAK 1212-8S package?

Vishay recommends minimum pad dimensions of 0.039" × 0.068" (0.99 mm × 1.725 mm) for pins 1–4 and 6–8, and 0.016" × 0.026" (0.405 mm × 0.660 mm) for pin 5 (gate), per Application Note 826. The exposed drain paddle requires a solid 3.2 mm × 3.2 mm thermal pad with 8–12 vias (0.3 mm diameter) to inner ground layers. The SISS64DN-T1-GE3 layout must avoid solder mask defined pads to ensure reliable thermal and electrical connection to the copper paddle.

How does the body diode performance of SISS64DN-T1-GE3 compare to external Schottky diodes in synchronous rectification?

The SISS64DN-T1-GE3 body diode delivers V_SD = 0.73–1.2 V at 10 A and t_rr = 40–80 ns, achieving forward voltage and recovery speed competitive with 30 V Schottky diodes. Unlike discrete Schottkys, the SISS64DN-T1-GE3 body diode shares the same thermal path as the MOSFET channel, eliminating mismatched junction temperatures. In practice, the SISS64DN-T1-GE3 eliminates need for external diodes in most 30 V synchronous buck designs, reducing BOM count and layout complexity.

SISS64DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® 1212-8S

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.1mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 3420 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 57W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8S

SISS64DN-T1-GE3 FAQ

1.How can I place an order for SISS64DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISS64DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISS64DN-T1-GE3 reliable?

The price and inventory of SISS64DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS64DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISS64DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS64DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISS64DN-T1-GE3?

SISS64DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISS64DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISS64DN-T1-GE3?

For technical support, including SISS64DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS64DN-T1-GE3 requirements.

6.How does Aetrix verify that SISS64DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISS64DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS64DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISS64DN-T1-GE3?

All SISS64DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS64DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISS64DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISS64DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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