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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISS66DN-T1-GE3

Name: SISS66DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS66DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISS66DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8S

Datasheet:: SISS66DN-T1-GE3.pdf

Description:: MOSFET N-CH 30V 49.1/178.3A PPAK

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Product details

Overview

SiSS66DN-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET with integrated monolithic Schottky diode in a PowerPAK® 1212-8S package. It delivers R_DS(on) = 1.38 mΩ at V_GS = 10 V, Q_g = 24.7 nC (at 4.5 V), and 178.3 A continuous drain current (T_C = 25 °C), optimized for high-frequency synchronous rectification in DC/DC converters.

For engineers reviewing the SiSS66DN-T1-GE3 datasheet, SiSS66DN-T1-GE3 pinout, SiSS66DN-T1-GE3 application, or SiSS66DN-T1-GE3 equivalent, key selection criteria include its low R_DS(on) × Q_g figure of merit, 100% R_g and UIS tested reliability, and thermal performance with R_thJC = 1.5 °C/W (typical) for high-power density buck converter designs.

Technical Context

This device integrates a Schottky diode monolithically with the MOSFET die to enable efficient synchronous rectification without external diode placement or layout complexity. Its SKYFET® architecture ensures fast body diode recovery (t_rr = 47 ns typ.) and low V_SD = 0.45 V (typ. at I_S = 10 A), reducing conduction loss during dead-time intervals.

The PowerPAK 1212-8S leadless package provides dual-side cooling via exposed copper drain pads on both top and bottom surfaces, supporting high-current operation with minimal thermal resistance. Gate drive compatibility is ensured across 4.5 V and 10 V logic levels, with V_GS(th) = 1–2.5 V and guaranteed 100% UIS testing per JEDEC JESD22-A109.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V and 24 V input DC/DC stages
R_DS(on) @ 10 V	1.38 mΩ max - Enables <1 W conduction loss at 178 A, critical for >95% efficiency targets
R_DS(on) @ 4.5 V	2.19 mΩ max - Ensures robust switching under 5 V gate drive in controller-based systems
Q_g @ 4.5 V	24.7 nC typ. - Low gate charge reduces driver power and enables >1 MHz operation
I_D (continuous)	178.3 A @ T_C = 25 °C - Supports high-current output rails in server VRMs and GPU power stages
R_thJC	1.5 °C/W typical - Allows direct heatsink attachment to drain pad for thermal management
V_SD	0.45 V typ. @ I_S = 10 A - Lower forward drop than discrete Schottky alternatives, reducing dead-time loss

Pinout & Package

SiSS66DN-T1-GE3 uses the PowerPAK® 1212-8S surface-mount, leadless package (3.3 mm × 3.3 mm footprint) with dual-sided copper-exposed drain terminals for enhanced thermal and electrical performance. The package features eight terminals arranged in a 2×4 grid, with pins 1–4 as source, pin 5 as gate, and pins 6–8 as drain connections.

Pin/Terminal	Circuit Role	Design Meaning
1–4	Source (S)	Common source connection for internal MOSFET and Schottky cathode; low-inductance return path
5	Gate (G)	Single gate input with R_g = 0.12–1.2 Ω; compatible with standard 5 V or 3.3 V PWM controllers
6–8	Drain (D)	Parallel-connected drain terminals tied to exposed copper pad; supports high-current output routing and thermal sinking

Key Features

Feature	Design Value
TrenchFET® Gen IV process	Enables ultra-low R_DS(on) × Q_g FOM for high-efficiency, high-frequency switching in compact layouts
Monolithic SKYFET® Schottky diode	Eliminates external diode placement, reduces PCB area, and guarantees matched thermal behavior with MOSFET
100% R_g and UIS tested	Ensures gate robustness against transient overvoltage and ruggedness in unclamped inductive switching events
PowerPAK 1212-8S package	Provides dual-side cooling and 30% lower R_thJA vs. SO-8, enabling higher power density without forced airflow

Applications

Server VRM Output Stage	GPU Core Power Delivery
Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 600 A peak. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in low-side position, operating at 500 kHz–1 MHz with tight dead-time control. Use Value: 1.38 mΩ R_DS(on) minimizes I²R loss; integrated Schottky reduces reverse recovery loss during dead time, improving full-load efficiency by ~0.8%.	Use Scenario: Point-of-load regulator delivering 0.7–1.1 V to GPU cores under dynamic load transients exceeding 300 A/μs. IC Role / Device Role / Timing Role: Low-side switch in interleaved multiphase topology, requiring fast turn-on and low Q_gd for stable control loop response. Use Value: 5.8 nC Q_gd and 24.7 nC Q_g at 4.5 V enable clean switching edge and reduced gate drive loss, supporting stable regulation under rapid load steps.
Industrial DC/DC Module	Telecom Base Station PSU
Use Scenario: Isolated 48 V-to-12 V intermediate bus converter in DIN-rail mounted power supply with 10-year field life requirement. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant topology, operating continuously at 65 °C ambient. Use Value: R_thJC = 1.5 °C/W allows direct thermal interface to chassis, maintaining T_J < 125 °C without heatsink; 100% UIS tested ensures reliability under line surge conditions.	Use Scenario: 48 V input, 3.3 V/50 A output non-isolated buck converter powering RF power amplifiers in macro cell base stations. IC Role / Device Role / Timing Role: High-current low-side switch in high-density, air-cooled module with strict EMI limits. Use Value: Low C_iss = 3327 pF and C_rss = 150 pF reduce Miller effect, enabling clean switching with minimal gate ringing and lower radiated emissions.

Server VRM Output Stage

GPU Core Power Delivery

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 600 A peak.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in low-side position, operating at 500 kHz–1 MHz with tight dead-time control.

Use Value: 1.38 mΩ R_DS(on) minimizes I²R loss; integrated Schottky reduces reverse recovery loss during dead time, improving full-load efficiency by ~0.8%.

Use Scenario: Point-of-load regulator delivering 0.7–1.1 V to GPU cores under dynamic load transients exceeding 300 A/μs.

IC Role / Device Role / Timing Role: Low-side switch in interleaved multiphase topology, requiring fast turn-on and low Q_gd for stable control loop response.

Use Value: 5.8 nC Q_gd and 24.7 nC Q_g at 4.5 V enable clean switching edge and reduced gate drive loss, supporting stable regulation under rapid load steps.

Industrial DC/DC Module

Telecom Base Station PSU

Use Scenario: Isolated 48 V-to-12 V intermediate bus converter in DIN-rail mounted power supply with 10-year field life requirement.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant topology, operating continuously at 65 °C ambient.

Use Value: R_thJC = 1.5 °C/W allows direct thermal interface to chassis, maintaining T_J < 125 °C without heatsink; 100% UIS tested ensures reliability under line surge conditions.

Use Scenario: 48 V input, 3.3 V/50 A output non-isolated buck converter powering RF power amplifiers in macro cell base stations.

IC Role / Device Role / Timing Role: High-current low-side switch in high-density, air-cooled module with strict EMI limits.

Use Value: Low C_iss = 3327 pF and C_rss = 150 pF reduce Miller effect, enabling clean switching with minimal gate ringing and lower radiated emissions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET with integrated Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-GE3	R_DS(on) = 1.75 mΩ @ 10 V; same PowerPAK 1212-8S package; higher Q_g (32.5 nC @ 4.5 V)	Lower current rating (150 A vs. 178.3 A); suitable where thermal margin exceeds electrical margin	Select when cost sensitivity outweighs peak efficiency needs and layout space permits slightly higher losses
IRFH7107TRPBF	R_DS(on) = 1.45 mΩ @ 10 V; PQFN 5×6 mm package; no integrated Schottky diode	Requires external Schottky; larger footprint; higher total solution size and BOM count	Choose only if existing design uses IR's PQFN footprint and external diode integration is already validated

Compared with SiR626DP-T1-GE3 and IRFH7107TRPBF, SiSS66DN-T1-GE3 offers the lowest R_DS(on) × Q_g FOM and monolithic Schottky integration-enabling smaller PCB area, higher efficiency at 1 MHz+, and simplified thermal design in space-constrained VRMs and telecom modules.

Availability

SiSS66DN-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery, industrial DC/DC modules, and telecom base station PSUs requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SiSS66DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power solutions.

The SiSS66DN-T1-GE3 belongs to Vishay's SKYFET® family-designed specifically for high-frequency synchronous rectification in DC/DC converters where low conduction loss, fast body diode recovery, and thermal robustness are critical.

FAQ

What is the maximum continuous drain current rating for SiSS66DN-T1-GE3 at 70 °C case temperature?

The SiSS66DN-T1-GE3 supports 142.6 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal constraints of the PowerPAK 1212-8S package and ensures safe operation within the 150 °C maximum junction temperature limit. Designers must verify board-level thermal resistance to maintain this rating in actual application conditions.

Does SiSS66DN-T1-GE3 include an integrated Schottky diode, and how is it connected internally?

Yes, SiSS66DN-T1-GE3 integrates a monolithic Schottky diode as part of its SKYFET® architecture. The Schottky anode is connected to the source terminal (pins 1–4), and the cathode is tied to the drain (pins 6–8). This configuration enables synchronous rectification without external components and ensures matched thermal behavior between MOSFET and diode, critical for stable performance under dynamic loads.

What is the typical reverse recovery time (t_rr) of the integrated Schottky diode in SiSS66DN-T1-GE3?

The typical reverse recovery time (t_rr) of the integrated Schottky diode in SiSS66DN-T1-GE3 is 47 ns, measured at I_F = 10 A and di/dt = 100 A/μs with T_J = 25 °C. This ultra-fast recovery eliminates minority-carrier storage delay, significantly reducing switching loss during dead-time intervals compared to standard body diodes-directly contributing to higher efficiency in high-frequency buck converters.

Is SiSS66DN-T1-GE3 suitable for 48 V input DC/DC converter applications?

SiSS66DN-T1-GE3 is rated for V_DS = 30 V, making it unsuitable as a primary high-side switch in 48 V input topologies. However, it is well-suited for secondary-side synchronous rectification in isolated 48 V-to-12 V or 48 V-to-5 V converters where drain-source voltage remains below 30 V. Its low R_DS(on) and integrated Schottky deliver measurable efficiency gains in such configurations.

What is the gate threshold voltage range (V_GS(th)) for SiSS66DN-T1-GE3, and how does it affect drive compatibility?

The gate threshold voltage V_GS(th) for SiSS66DN-T1-GE3 is specified from 1.0 V to 2.5 V at I_D = 250 μA. This low and tightly bounded range ensures reliable turn-on with standard 3.3 V or 5 V gate drivers, while minimizing shoot-through risk in half-bridge configurations. The narrow spread also supports consistent timing across production lots in high-volume power supply manufacturing.

SISS66DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® 1212-8S

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 49.1A (Ta), 178.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.38mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 85.5 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 3327 pF @ 15 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 5.1W (Ta), 65.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8S

SISS66DN-T1-GE3 FAQ

1.How can I place an order for SISS66DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISS66DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISS66DN-T1-GE3 reliable?

The price and inventory of SISS66DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS66DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISS66DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS66DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISS66DN-T1-GE3?

SISS66DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISS66DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISS66DN-T1-GE3?

For technical support, including SISS66DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS66DN-T1-GE3 requirements.

6.How does Aetrix verify that SISS66DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISS66DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS66DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISS66DN-T1-GE3?

All SISS66DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS66DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISS66DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISS66DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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