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Vishay Siliconix SISS70DN-T1-GE3
- Part No.:
- SISS70DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8S
- Datasheet:
-
SISS70DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 125V 8.5A/31A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,000
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Product details
Overview
SiSS70DN-T1-GE3 from Vishay Siliconix is an N-channel 125 V (D-S) TrenchFET® Power MOSFET with ThunderFET® technology, optimized for high-efficiency primary-side switching and synchronous rectification in DC/DC converters. It delivers RDS(on) = 0.0298 Ω at VGS = 10 V, Qg = 10.2 nC typ., and 31 A continuous drain current at TC = 25 °C in a PowerPAK® 1212-8S leadless package.
For engineers reviewing the SiSS70DN-T1-GE3 datasheet, SiSS70DN-T1-GE3 pinout, SiSS70DN-T1-GE3 application, or SiSS70DN-T1-GE3 equivalent, this device is selected for high-frequency, high-current power conversion stages where low conduction loss, fast switching, and robust avalanche capability are critical - especially in compact industrial and automotive DC/DC modules.
Technical Context
This MOSFET employs trench-gate architecture with ThunderFET optimization to balance RDS(on), total gate charge (Qg = 10.2 nC), output charge (Qoss = 26 pC), and reverse transfer capacitance (Crss = 8 pF). Its 125 V VDS rating supports wide-input-range flyback and active clamp forward topologies.
The device features a fully rated body diode with trr = 46 ns and Qrr = 82 nC, enabling efficient synchronous rectification without external Schottky diodes. Thermal resistance RthJC = 1.5 °C/W (typ.) supports high-power density designs when mounted on thermally enhanced PCBs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 125 V - Supports input rails up to 100 V DC with margin for voltage spikes in isolated converters. |
| RDS(on) max @ VGS = 10 V | 0.0298 Ω - Enables ≤ 8.5 A continuous current at <1 W conduction loss under typical thermal conditions. |
| ID continuous @ TC = 25 °C | 31 A - Sustains high peak-load currents in motor drive half-bridges and load switch applications. |
| Qg typ. | 10.2 nC - Reduces gate drive power and enables clean 100+ kHz switching in LLC resonant converters. |
| EAS | 20 mJ - Withstands single-pulse avalanche energy during inductive turn-off transients without failure. |
| RthJC max | 1.9 °C/W - Allows direct thermal coupling to heatsink or copper pour for >40 W dissipation in compact layouts. |
| trr & Qrr | 46 ns / 82 nC - Minimizes body diode switching loss and EMI in synchronous rectifier operation. |
Pinout & Package
SiSS70DN-T1-GE3 uses the PowerPAK® 1212-8S - a 3.3 mm × 3.3 mm, 0.75 mm height, leadless surface-mount package with exposed drain paddle on the bottom side for optimal thermal performance. The top-side terminals are arranged in dual-row configuration with pins 1–4 as source (S), pins 5–8 as drain (D), and pin 1 (top-left corner, marked by dot) adjacent to gate (G) on the short edge.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Top-left, dot-marked) | Gate (G) | Low-impedance control input; requires <1.2 Ω gate resistor to damp ringing due to Rg = 0.24–2.4 Ω. |
| 2, 3, 4 | Source (S) | Common source node; electrically tied to internal substrate; must be connected to low-inductance ground plane. |
| 5, 6, 7, 8 | Drain (D) | High-current power output; internally connected to exposed copper paddle - requires full-solder coverage for thermal integrity. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® with ThunderFET® technology | Simultaneously minimizes RDS(on), Qg, Qsw, and Qoss - enabling high efficiency across 100 kHz–1 MHz switching frequencies. |
| 100 % Rg and UIS tested | Ensures gate robustness against ESD and reliable unclamped inductive switching performance in real-world motor and converter loads. |
| PowerPAK® 1212-8S package | 0.75 mm profile and exposed drain paddle deliver 1.5 °C/W RthJC - enabling >2× power density vs. SO-8 in space-constrained DC/DC modules. |
| Body diode trr = 46 ns | Reduces reverse recovery loss and associated voltage overshoot in synchronous rectifier mode - critical for >95 % efficiency at light loads. |
| VGS(th) = 2.5–4.5 V | Enables clean turn-on with standard 5 V or 3.3 V logic-level gate drivers - no level-shifting required in low-voltage control circuits. |
Applications
| Primary Side Switching | Synchronous Rectification |
|---|---|
|
Use Scenario: High-voltage flyback or active-clamp forward converter operating from 36–75 V DC input in telecom power supplies. IC Role / Device Role: Primary-side power switch handling 31 A pulsed drain current and 125 V blocking. Use Value: Low Qg and Qoss reduce switching losses; 20 mJ EAS withstands leakage inductance spikes without snubber. |
Use Scenario: Secondary-side rectification in 12 V/20 A isolated DC/DC module for server VRMs. IC Role / Device Role: Synchronous rectifier replacing Schottky diode to cut conduction loss by >40 % at 20 A. Use Value: Fast 46 ns trr and low VSD = 0.8 V minimize reverse recovery loss and improve light-load efficiency. |
| Motor Drive Control | Load Switch |
|
Use Scenario: Half-bridge gate driver stage in 24 V BLDC motor controller for industrial automation. IC Role / Device Role: High-side or low-side switching element controlling phase current up to 31 A. Use Value: 125 V VDS provides margin against back-EMF spikes; RDS(on) = 0.0298 Ω limits I²R heating at full load. |
Use Scenario: Hot-swap and inrush current limiting in 48 V industrial PLC backplane power distribution. IC Role / Device Role: Single N-channel load switch with integrated gate driver support and overcurrent protection interface. Use Value: 31 A continuous rating and 50 A pulsed capability enable robust 100 W+ load switching with minimal voltage drop. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 125 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | SO-8 package; RDS(on) = 0.032 Ω; Qg = 12.5 nC; RthJA = 62 °C/W (vs. 25 °C/W for SiSS70DN-T1-GE3). | Lower power density; unsuitable for >10 W/cm² layouts; requires larger heatsinking. | Select when legacy SO-8 footprint compatibility is mandatory and thermal budget allows higher RthJA. |
| DMTH1250UTS-13 | PowerDI™ 5060 package; RDS(on) = 0.027 Ω; Qg = 11.8 nC; trr = 65 ns; no UIS rating specified. | Higher body diode recovery time increases synchronous rectifier loss; lacks 100 % UIS test assurance. | Choose for cost-sensitive designs where slightly lower RDS(on) offsets slower diode recovery and missing UIS validation. |
Compared with IRF7470PBF and DMTH1250UTS-13, SiSS70DN-T1-GE3 offers superior thermal performance (1.5 °C/W RthJC), faster body diode recovery (46 ns), and guaranteed UIS testing - making it preferred for high-density, high-reliability DC/DC and motor drive applications where layout space and transient robustness are constrained.
Availability
SiSS70DN-T1-GE3 is available at Aetrix Electronics and suitable for industrial power supplies, automotive DC/DC converters, and embedded motor control systems requiring stable component supply, Pb-free/halogen-free compliance, and long-term lifecycle continuity.
Supply support for SiSS70DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and miniaturization.
The SiSS70DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-frequency, high-current power conversion in space-constrained industrial and automotive applications.
FAQ
What is the maximum continuous drain current rating for SiSS70DN-T1-GE3 at 70 °C case temperature?
The SiSS70DN-T1-GE3 supports 24.8 A continuous drain current at TC = 70 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK® 1212-8S package under sustained power dissipation. Engineers must verify board-level thermal design - including copper area and airflow - to sustain this current without exceeding TJ = 150 °C. The SiSS70DN-T1-GE3 datasheet confirms this value under "Continuous drain current" with note "TC = 70 °C".
Does SiSS70DN-T1-GE3 have a qualified avalanche rating, and what does it mean for circuit design?
Yes, SiSS70DN-T1-GE3 is 100 % tested for Unclamped Inductive Switching (UIS) and rated for 20 mJ single-pulse avalanche energy (EAS) at TJ = 25 °C. This means the SiSS70DN-T1-GE3 can safely absorb inductive energy from transformer leakage or motor windings during turn-off without failure - eliminating need for external clamping circuits in many flyback and half-bridge designs. The rating is validated per JEDEC JESD24-1.
What is the gate threshold voltage range for SiSS70DN-T1-GE3, and how does it affect gate drive selection?
The SiSS70DN-T1-GE3 has a gate-source threshold voltage (VGS(th)) range of 2.5 V to 4.5 V at ID = 250 μA. This logic-compatible range ensures reliable turn-on with standard 3.3 V or 5 V microcontroller outputs or gate drivers. Because the SiSS70DN-T1-GE3 achieves full enhancement at VGS ≥ 10 V, designers should target ≥10 V gate drive for minimum RDS(on) and optimal switching speed - confirmed by its RDS(on) spec at VGS = 10 V.
Can SiSS70DN-T1-GE3 be used in synchronous rectification, and what body diode parameters support that use?
Yes, SiSS70DN-T1-GE3 is explicitly recommended for synchronous rectification per Vishay's application notes and datasheet. Its body diode exhibits VSD = 0.8 V (typ.) at IS = 6.8 A and ultrafast trr = 46 ns (typ.), with Qrr = 82 nC - significantly lower than standard MOSFETs. These values directly reduce conduction and recovery losses in secondary-side rectification, enabling >95 % efficiency in 12 V/20 A DC/DC modules. The SiSS70DN-T1-GE3 datasheet lists these parameters under "Drain-Source Body Diode Characteristics."
What is the thermal resistance from junction to case (RthJC) for SiSS70DN-T1-GE3, and why is it critical in layout design?
The SiSS70DN-T1-GE3 has a typical junction-to-case thermal resistance (RthJC) of 1.5 °C/W, with a maximum of 1.9 °C/W. This low value is enabled by the exposed drain paddle in the PowerPAK® 1212-8S package, which must be soldered to a large copper thermal pad. It is critical because it determines how effectively heat transfers from the die to the PCB - enabling >40 W power dissipation with proper copper area. Layouts ignoring this requirement will exceed TJ = 150 °C even below rated current. The SiSS70DN-T1-GE3 datasheet specifies RthJC in the "Thermal Resistance Ratings" table.
SISS70DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8S
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 125 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.5A (Ta), 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 29.8mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15.3 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 535 pF @ 62.5 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.1W (Ta), 65.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8S
SISS70DN-T1-GE3 FAQ
1.How can I place an order for SISS70DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SISS70DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SISS70DN-T1-GE3 reliable?
The price and inventory of SISS70DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS70DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SISS70DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS70DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SISS70DN-T1-GE3?
SISS70DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SISS70DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SISS70DN-T1-GE3?
For technical support, including SISS70DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS70DN-T1-GE3 requirements.
6.How does Aetrix verify that SISS70DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SISS70DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS70DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SISS70DN-T1-GE3?
All SISS70DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS70DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SISS70DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SISS70DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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