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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISS76LDN-T1-GE3

Name: SISS76LDN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS76LDN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISS76LDN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8SH

Datasheet:: SISS76LDN-T1-GE3.pdf

Description:: MOSFET N-CH 70V 19.6A/67.4A PPAK

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Product details

Overview

SiSS76LDN-T1-GE3 from Vishay Siliconix is an N-channel 70 V (D-S) TrenchFET® Gen IV power MOSFET in a PowerPAK® 1212-8S package, delivering R_DS(on) = 6.25 mΩ at V_GS = 4.5 V, Q_g = 16.5 nC (typ.), and continuous I_D = 67.4 A at T_C = 25 °C. It serves as a high-efficiency primary-side switch or synchronous rectifier in DC/DC converters.

For engineers reviewing the SiSS76LDN-T1-GE3 datasheet, SiSS76LDN-T1-GE3 pinout, SiSS76LDN-T1-GE3 application, or SiSS76LDN-T1-GE3 equivalent, key selection criteria include its low R_DS(on) × Q_oss figure-of-merit, 100% R_g and UIS tested reliability, and optimized performance for bus converters operating at 3.3 V gate drive.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to achieve ultra-low conduction and switching losses. Its gate charge profile is tuned specifically for minimal R_DS(on) × Q_oss, enabling high-frequency operation in hard-switched topologies with reduced switching loss and improved efficiency.

The device features a robust body diode with t_rr = 29 ns (typ.) and Q_rr = 21 nC (typ.), supporting reliable synchronous rectification. Thermal design is enabled by R_thJC = 1.7 °C/W (typ.) and a leadless PowerPAK 1212-8S package with exposed drain copper on the bottom side for direct thermal path to PCB.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	70 V - Maximum drain-source blocking voltage suitable for 48 V input bus and 60 V transient clamping in industrial DC/DC systems.
R_DS(on) @ 4.5 V	6.25 mΩ max - Enables <1 W conduction loss at 40 A, critical for high-current synchronous rectifiers.
Q_g @ 3.3 V	16.5 nC typ. - Low gate charge supports efficient 3.3 V logic-level drive without external level shifting.
I_D (T_C = 25 °C)	67.4 A - High continuous current rating enables single-device solutions in compact 50–100 W bus converters.
R_thJC	1.7 °C/W typ. - Enables direct heatsinking via PCB copper, allowing >40 W dissipation with modest thermal pad area.
V_GS(th)	0.4–1.6 V - Ultra-low threshold ensures turn-on compatibility with 3.3 V microcontrollers and gate drivers.
Q_oss	26.2 nC - Low output charge reduces turn-off energy and improves light-load efficiency in resonant converters.

Pinout & Package

PowerPAK® 1212-8S is a 3.3 mm × 3.3 mm, 8-terminal, leadless surface-mount package with exposed drain (pins 1–4 and 5–8) on the bottom side and source/gate terminals on the top side. The package provides low-inductance, high-current paths and superior thermal performance via direct PCB copper contact.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain (D)	Top-side drain terminals - electrically connected to bottom-side exposed copper; used for high-current drain routing and thermal conduction.
5, 6, 7, 8	Drain (D)	Top-side drain terminals - redundant connections to same internal drain node; enhance current sharing and reduce parasitic inductance.
Source (S)	Source (S)	Terminals located between drain pins on top side - forms low-inductance source loop with adjacent gate; referenced for gate drive.
G	Gate (G)	Single top-side gate terminal - designed for low-R_g (0.3–1.5 Ω) control; requires <17 nC total charge for full enhancement.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers industry-leading R_DS(on) × Q_g and R_DS(on) × Q_oss FOMs for high-frequency, high-efficiency switching.
100% R_g and UIS tested	Ensures gate robustness against overvoltage transients and ruggedness under unclamped inductive switching stress.
Optimized for 3.3 V drive	R_DS(on) = 6.9 mΩ max at V_GS = 3.3 V enables direct interface with low-voltage MCUs and PWM controllers.
Low Q_rr body diode	Q_rr = 21 nC (typ.) and t_rr = 29 ns (typ.) minimize reverse recovery loss and EMI in synchronous rectification.
Leadless PowerPAK 1212-8S	Reduces package inductance and thermal resistance vs. SO-8; enables >2× power density in space-constrained board layouts.

Applications

Server VRM Output Stage	Industrial 48 V Bus Converter
Use Scenario: High-current, high-efficiency buck converter supplying core voltage to multi-core CPUs in data center servers. IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 300–600 kHz with 3.3 V gate drive from integrated controller. Use Value: 6.25 mΩ R_DS(on) and 16.5 nC Q_g enable >95% efficiency at 60 A load while minimizing thermal footprint on dense VRM PCBs.	Use Scenario: Isolated or non-isolated step-down converter converting 48 V intermediate bus to 12 V for motor drives and PLC I/O modules. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side of active-clamp forward or LLC topology. Use Value: Low Q_rr and fast t_rr reduce cross-conduction loss and improve light-load regulation stability in wide-input industrial supplies.
Telecom DC/DC Brick	Automotive ADAS Power Supply
Use Scenario: Compact 50–100 W telecom brick requiring high power density and 100% burn-in reliability. IC Role / Device Role / Timing Role: Primary-side switch in half-bridge or active-clamp forward topology with 400 kHz switching frequency. Use Value: 100% UIS testing and -55 to +150 °C TJ range ensure field reliability in thermally stressed telecom environments.	Use Scenario: 12 V auxiliary supply for radar ECU or camera module in ADAS domain controller. IC Role / Device Role / Timing Role: Low-side switch controlling 5–10 A load with 3.3 V MCU GPIO drive. Use Value: V_GS(th) = 0.4–1.6 V guarantees clean turn-on with automotive-grade microcontrollers, eliminating need for gate driver ICs.

Server VRM Output Stage

Industrial 48 V Bus Converter

Use Scenario: High-current, high-efficiency buck converter supplying core voltage to multi-core CPUs in data center servers.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 300–600 kHz with 3.3 V gate drive from integrated controller.

Use Value: 6.25 mΩ R_DS(on) and 16.5 nC Q_g enable >95% efficiency at 60 A load while minimizing thermal footprint on dense VRM PCBs.

Use Scenario: Isolated or non-isolated step-down converter converting 48 V intermediate bus to 12 V for motor drives and PLC I/O modules.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side of active-clamp forward or LLC topology.

Use Value: Low Q_rr and fast t_rr reduce cross-conduction loss and improve light-load regulation stability in wide-input industrial supplies.

Telecom DC/DC Brick

Automotive ADAS Power Supply

Use Scenario: Compact 50–100 W telecom brick requiring high power density and 100% burn-in reliability.

IC Role / Device Role / Timing Role: Primary-side switch in half-bridge or active-clamp forward topology with 400 kHz switching frequency.

Use Value: 100% UIS testing and -55 to +150 °C TJ range ensure field reliability in thermally stressed telecom environments.

Use Scenario: 12 V auxiliary supply for radar ECU or camera module in ADAS domain controller.

IC Role / Device Role / Timing Role: Low-side switch controlling 5–10 A load with 3.3 V MCU GPIO drive.

Use Value: V_GS(th) = 0.4–1.6 V guarantees clean turn-on with automotive-grade microcontrollers, eliminating need for gate driver ICs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 70 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-GE3	R_DS(on) = 5.8 mΩ @ 4.5 V, Q_g = 21.5 nC, same PowerPAK 1212-8S package	Slightly lower R_DS(on) but higher Q_g; better for low-frequency, high-current apps; less optimal for 3.3 V drive	Prefer when lowest conduction loss dominates and gate drive strength permits higher Q_g.
IRLHS6342TRPBF	R_DS(on) = 7.0 mΩ @ 4.5 V, Q_g = 14.5 nC, PowerPAK SC-70-6 package (smaller, lower current)	Lower I_D (22 A), smaller footprint; not suitable for >30 A loads or high-power thermal management	Select only for space-constrained, sub-30 W designs where 67.4 A rating is unnecessary.

Compared with SiR626DP-T1-GE3 and IRLHS6342TRPBF, SiSS76LDN-T1-GE3 uniquely balances ultra-low R_DS(on) × Q_oss, 3.3 V drive capability, and 67.4 A current handling-making it optimal for high-density, high-efficiency 48 V bus converters where both switching and conduction losses must be minimized simultaneously.

Availability

SiSS76LDN-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial 48 V bus converters, and telecom DC/DC bricks requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SiSS76LDN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SiSS76LDN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered for high-efficiency, high-frequency DC/DC conversion in computing, industrial, and telecom infrastructure.

FAQ

What is the maximum continuous drain current for SiSS76LDN-T1-GE3 at 70 °C case temperature?

The maximum continuous drain current for SiSS76LDN-T1-GE3 is 54 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK 1212-8S package under sustained power dissipation. Engineers designing for ambient conditions above 25 °C must use this value-not the 67.4 A rating at 25 °C-to ensure safe junction temperature operation in SiSS76LDN-T1-GE3-based circuits.

Does SiSS76LDN-T1-GE3 support 3.3 V logic-level gate drive?

Yes, SiSS76LDN-T1-GE3 is fully characterized for 3.3 V gate drive: R_DS(on) is guaranteed at 6.9 mΩ max at V_GS = 3.3 V and I_D = 10 A. Its V_GS(th) range of 0.4–1.6 V ensures reliable turn-on with standard 3.3 V microcontrollers and gate drivers. This eliminates the need for level-shifting circuitry in SiSS76LDN-T1-GE3 applications such as low-voltage synchronous rectifiers.

What is the thermal resistance from junction to case (R_thJC) for SiSS76LDN-T1-GE3?

The typical junction-to-case thermal resistance (R_thJC) for SiSS76LDN-T1-GE3 is 1.7 °C/W, with a maximum of 2.2 °C/W. This low value is enabled by the PowerPAK 1212-8S package's exposed drain copper on the bottom side, which provides a direct thermal path to the PCB. When designing heatsinking for SiSS76LDN-T1-GE3, this parameter governs the upper bound of power dissipation achievable with board-level copper area alone.

Is SiSS76LDN-T1-GE3 suitable for synchronous rectification?

Yes, SiSS76LDN-T1-GE3 is explicitly recommended for synchronous rectification per its Applications section. Its low Q_rr (21 nC typ.), fast t_rr (29 ns typ.), and low R_DS(on) minimize reverse recovery loss and conduction loss in secondary-side switching. The device's body diode is fully characterized and rated for continuous I_S = 51.8 A at T_C = 25 °C-making SiSS76LDN-T1-GE3 well-suited for high-current, high-frequency synchronous rectifier designs.

What does "TrenchFET® Gen IV" mean for SiSS76LDN-T1-GE3 performance?

TrenchFET® Gen IV refers to Vishay's fourth-generation trench-gate MOSFET process, optimized for ultra-low R_DS(on) × Q_g and R_DS(on) × Q_oss figures-of-merit. For SiSS76LDN-T1-GE3, this translates to 6.25 mΩ R_DS(on) at 4.5 V with only 16.5 nC Q_g (at 3.3 V), enabling high-efficiency operation in 300–1000 kHz DC/DC converters. The Gen IV architecture also improves ruggedness, evidenced by 100% UIS testing of every SiSS76LDN-T1-GE3 unit.

SISS76LDN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® 1212-8SH

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 70 V

Current - Continuous Drain (Id) @ 25°C:: 19.6A (Ta), 67.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 3.3V, 4.5V

Rds On (Max) @ Id, Vgs:: 6.25mOhm @ 10A, 4.5V

Vgs(th) (Max) @ Id:: 1.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33.5 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2780 pF @ 35 V

FET Feature:: -

Power Dissipation (Max):: 4.8W (Ta), 57W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8SH

SISS76LDN-T1-GE3 FAQ

1.How can I place an order for SISS76LDN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISS76LDN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISS76LDN-T1-GE3 reliable?

The price and inventory of SISS76LDN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS76LDN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISS76LDN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS76LDN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISS76LDN-T1-GE3?

SISS76LDN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISS76LDN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISS76LDN-T1-GE3?

For technical support, including SISS76LDN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS76LDN-T1-GE3 requirements.

6.How does Aetrix verify that SISS76LDN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISS76LDN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS76LDN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISS76LDN-T1-GE3?

All SISS76LDN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS76LDN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISS76LDN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISS76LDN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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