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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISS78LDN-T1-GE3

Name: SISS78LDN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS78LDN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISS78LDN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8SH

Datasheet:: SISS78LDN-T1-GE3.pdf

Description:: MOSFET N-CH 70V 19.4A/66.7A PPAK

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Product details

Overview

SiSS78LDN-T1-GE3 from Vishay Siliconix is an N-channel 70 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8S package, with R_DS(on) = 5.8 mΩ @ V_GS = 10 V, Q_g = 32 nC (typ), and continuous drain current I_D = 66.7 A at T_C = 25 °C. It serves as a high-efficiency primary-side switch or synchronous rectifier in DC/DC converters.

For engineers reviewing the SiSS78LDN-T1-GE3 datasheet, SiSS78LDN-T1-GE3 pinout, SiSS78LDN-T1-GE3 application, or SiSS78LDN-T1-GE3 equivalent, key selection criteria include its low R_DS(on) × Q_oss figure-of-merit, 100% R_g and UIS tested reliability, and optimized gate charge for fast switching in high-frequency bus converters.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to achieve ultra-low conduction and switching losses. Its R_DS(on) × Q_oss FOM is specifically tuned for high-efficiency synchronous rectification and primary-side switching in isolated topologies.

The device features a robust body diode with t_rr = 32 ns (typ) and Q_rr = 27 nC (typ) at I_F = 10 A, enabling reliable operation in hard-switched and resonant converter stages without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	70 V - Maximum drain-source blocking voltage; suitable for 48 V input bus and 60 V transient clamping in telecom and server power supplies.
R_DS(on) @ 10 V	5.8 mΩ max - Enables <1.5 W conduction loss at 60 A, critical for high-current output rails in bus converters.
Q_g @ 10 V	32 nC typ - Supports efficient 500 kHz–1 MHz switching with moderate gate drive strength (e.g., 2 A peak driver).
I_D (T_C = 25 °C)	66.7 A - Sustains high continuous current when mounted on heatsinked PCB areas or thermal pads.
R_thJC	1.7 °C/W typical - Allows direct thermal path from die to copper pad; enables >50 W dissipation with modest case-to-heatsink interface.
V_GS(th)	1.0–2.3 V - Ensures clean turn-on with standard 3.3 V or 5 V logic-level gate drivers without level shifting.
C_iss	2280 pF typ - Low input capacitance reduces Miller-induced oscillation risk and eases gate drive design stability.

Pinout & Package

SiSS78LDN-T1-GE3 uses the leadless PowerPAK® 1212-8S package (3.3 mm × 3.3 mm footprint, 0.75 mm nominal height), with exposed drain copper on the bottom side for enhanced thermal performance and dual-side source/gate terminals on top.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 (Top)	Source (S)	Four parallel top-side source terminals reduce source inductance and improve current sharing in paralleled configurations.
5, 6, 7, 8 (Top)	Drain (D)	Four top-side drain terminals provide low-inductance connection for gate-drive return paths and auxiliary sensing.
G (Top center)	Gate (G)	Single central gate terminal minimizes gate loop inductance and improves switching consistency across temperature.
Bottom (entire exposed area)	Drain (D)	Primary thermal and current path; requires full-solder coverage to PCB thermal pad for optimal R_thJC and power handling.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers industry-leading R_DS(on) × Q_oss FOM for reduced switching + conduction loss trade-off in high-frequency SMPS.
100% R_g and UIS tested	Ensures gate robustness against overvoltage transients and ruggedness under unclamped inductive switching stress.
Low V_GS(th) variation	ΔV_GS(th)/T_J = –4.6 mV/°C ensures stable turn-on threshold across –55 °C to +150 °C junction range.
Optimized body diode	t_rr = 32 ns and Q_rr = 27 nC enable zero-voltage switching (ZVS) assist in LLC and phase-shifted full-bridge designs.
Lead (Pb)-free & halogen-free	Complies with RoHS 2011/65/EU and Vishay's Green Standard (Doc. #99912), supporting eco-conscious industrial and telecom manufacturing.

Applications

Server DC/DC Bus Converter	Telecom 48 V Intermediate Bus
Use Scenario: High-density 48 V to 12 V step-down conversion in rack-mounted servers using multiphase buck topology. IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 600 kHz with synchronous rectification on secondary side. Use Value: 5.8 mΩ R_DS(on) limits conduction loss to <1.2 W at 50 A, while 32 nC Q_g enables efficient gate drive with integrated controller ICs like UCD7242.	Use Scenario: Isolated 48 V to 5 V/3.3 V conversion in telecom line cards requiring high reliability and low EMI. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward converter. Use Value: Low Q_rr (27 nC) and fast t_rr (32 ns) minimize reverse recovery loss and ringing, reducing need for external snubbers and improving efficiency by ~0.8% at full load.
Industrial PLC Power Module	EV Onboard Charger Auxiliary Supply
Use Scenario: 24 V input to 5 V/15 V isolated auxiliary supply powering microcontrollers and I/O drivers in programmable logic controllers. IC Role / Device Role / Timing Role: Primary-side switch in flyback converter operating up to 100 kHz with reinforced isolation. Use Value: 70 V V_DS rating accommodates 24 V input with 100% margin for surge events per IEC 61000-4-5 Level 3 (1 kV), ensuring long-term reliability.	Use Scenario: 400 V DC–to–12 V auxiliary supply in EV onboard chargers, where compact size and thermal resilience are critical. IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration driving transformer primary in resonant LLC stage. Use Value: R_thJC = 1.7 °C/W allows direct mounting to aluminum chassis, enabling >45 W continuous dissipation without external heatsink-reducing BOM count and footprint.

Server DC/DC Bus Converter

Telecom 48 V Intermediate Bus

Use Scenario: High-density 48 V to 12 V step-down conversion in rack-mounted servers using multiphase buck topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 600 kHz with synchronous rectification on secondary side.

Use Value: 5.8 mΩ R_DS(on) limits conduction loss to <1.2 W at 50 A, while 32 nC Q_g enables efficient gate drive with integrated controller ICs like UCD7242.

Use Scenario: Isolated 48 V to 5 V/3.3 V conversion in telecom line cards requiring high reliability and low EMI.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward converter.

Use Value: Low Q_rr (27 nC) and fast t_rr (32 ns) minimize reverse recovery loss and ringing, reducing need for external snubbers and improving efficiency by ~0.8% at full load.

Industrial PLC Power Module

EV Onboard Charger Auxiliary Supply

Use Scenario: 24 V input to 5 V/15 V isolated auxiliary supply powering microcontrollers and I/O drivers in programmable logic controllers.

IC Role / Device Role / Timing Role: Primary-side switch in flyback converter operating up to 100 kHz with reinforced isolation.

Use Value: 70 V V_DS rating accommodates 24 V input with 100% margin for surge events per IEC 61000-4-5 Level 3 (1 kV), ensuring long-term reliability.

Use Scenario: 400 V DC–to–12 V auxiliary supply in EV onboard chargers, where compact size and thermal resilience are critical.

IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration driving transformer primary in resonant LLC stage.

Use Value: R_thJC = 1.7 °C/W allows direct mounting to aluminum chassis, enabling >45 W continuous dissipation without external heatsink-reducing BOM count and footprint.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 70 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH7085TRPBF	R_DS(on) = 6.2 mΩ @ 10 V; Q_g = 35 nC; same PowerSO-8 package but not leadless; higher R_thJA (40 °C/W vs. 21 °C/W).	Less suited for thermally constrained layouts; requires larger PCB copper area for equivalent thermal performance.	Prefer SiSS78LDN-T1-GE3 when board space and thermal resistance are critical; IRFH7085TRPBF offers broader distributor availability.
SISD78LDN-T1-GE3	Same die, dual-die version in PowerPAK® 1212-8S; R_DS(on) = 11.6 mΩ @ 10 V; I_D = 47 A; shares identical pinout and footprint.	Used in lower-current, cost-sensitive designs where redundancy or paralleling is unnecessary.	Select SiSS78LDN-T1-GE3 for single-device 60+ A applications; SISD78LDN-T1-GE3 is appropriate for 30–45 A designs needing same layout compatibility.

Compared with IRFH7085TRPBF and SISD78LDN-T1-GE3, SiSS78LDN-T1-GE3 delivers superior thermal performance (R_thJC = 1.7 °C/W), lower conduction loss, and tighter R_DS(on) × Q_oss optimization-making it the preferred choice for high-power density, high-frequency DC/DC conversion where thermal headroom and efficiency margins are constrained.

Availability

SiSS78LDN-T1-GE3 is available at Aetrix Electronics and suitable for server DC/DC bus converters, telecom intermediate bus supplies, and industrial PLC auxiliary power modules requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for SiSS78LDN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for industrial, automotive, and computing markets.

The SiSS78LDN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-frequency, high-current DC/DC conversion in datacenter, telecom, and industrial power systems where low R_DS(on) × Q_g and robust avalanche capability are essential.

FAQ

What is the maximum continuous drain current rating for SiSS78LDN-T1-GE3 at 70 °C case temperature?

The SiSS78LDN-T1-GE3 supports 53.3 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects derating due to thermal limitations and assumes proper PCB thermal design with adequate copper area and solder coverage on the bottom-side drain pad.

Does SiSS78LDN-T1-GE3 require a gate resistor for stable switching in a 600 kHz buck converter?

Yes - while SiSS78LDN-T1-GE3 has low gate resistance (R_g = 0.82 Ω typ), a series gate resistor of 2–5 Ω is recommended to dampen ringing, control dV/dt, and prevent shoot-through in high-side configurations. The 32 nC total gate charge necessitates sufficient drive strength (≥2 A peak) from the controller's gate driver stage.

Can SiSS78LDN-T1-GE3 be used as a synchronous rectifier in a 100 kHz forward converter?

Yes - SiSS78LDN-T1-GE3 is qualified for synchronous rectification applications, including forward converters. Its low V_SD (0.77 V typ at 5 A), fast body diode t_rr (32 ns), and low Q_rr (27 nC) reduce conduction and recovery losses, improving efficiency by up to 1.2% compared to Schottky alternatives at 100 kHz.

What is the recommended minimum PCB pad layout for SiSS78LDN-T1-GE3's PowerPAK® 1212-8S package?

The recommended minimum PCB pad layout for SiSS78LDN-T1-GE3 follows Vishay Application Note 826: a 3.86 mm × 2.39 mm thermal pad for the bottom drain, with 0.99 mm wide source/gate traces and 1.725 mm × 0.405 mm top-side terminal pads. Full-solder coverage of the bottom drain pad is mandatory to achieve the specified R_thJC = 1.7 °C/W.

Is SiSS78LDN-T1-GE3 suitable for use in automotive ADAS power supplies?

No - SiSS78LDN-T1-GE3 is not AEC-Q101 qualified and lacks automotive-specific qualification testing (e.g., HTOL, UHAST, ESD). While its -55 °C to +150 °C operating range overlaps with automotive requirements, Vishay positions this part for industrial, telecom, and computing applications-not automotive safety-critical systems.

SISS78LDN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® 1212-8SH

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 70 V

Current - Continuous Drain (Id) @ 25°C:: 19.4A (Ta), 66.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.8mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2280 pF @ 35 V

FET Feature:: -

Power Dissipation (Max):: 4.8W (Ta), 57W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8SH

SISS78LDN-T1-GE3 FAQ

1.How can I place an order for SISS78LDN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISS78LDN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISS78LDN-T1-GE3 reliable?

The price and inventory of SISS78LDN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS78LDN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISS78LDN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS78LDN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISS78LDN-T1-GE3?

SISS78LDN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISS78LDN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISS78LDN-T1-GE3?

For technical support, including SISS78LDN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS78LDN-T1-GE3 requirements.

6.How does Aetrix verify that SISS78LDN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISS78LDN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS78LDN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISS78LDN-T1-GE3?

All SISS78LDN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS78LDN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISS78LDN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISS78LDN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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