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Vishay Siliconix SISS80DN-T1-GE3
- Part No.:
- SISS80DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8S
- Datasheet:
-
SISS80DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 20V 58.3A/210A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:11,696
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Product details
Overview
SiSS80DN-T1-GE3 from Vishay Siliconix is an N-channel 20 V TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8S package, delivering RDS(on) = 0.92 mΩ at VGS = 10 V, 115 μΩ at VGS = 4.5 V, and 3.0 mΩ at VGS = 2.5 V, with 210 A continuous drain current (TC = 25 °C), optimized for high-efficiency synchronous rectification in DC/DC converters.
For engineers reviewing the SiSS80DN-T1-GE3 datasheet, SiSS80DN-T1-GE3 pinout, SiSS80DN-T1-GE3 application, or SiSS80DN-T1-GE3 equivalent, key selection criteria include low RDS(on) at 4.5 V gate drive, ultra-low Qg (36 nC typ. at 4.5 V), robust UIS rating, and thermal performance with RthJC = 1.5 °C/W for high-current, space-constrained power stages.
Technical Context
This MOSFET employs TrenchFET® Gen IV process technology to achieve sub-1 mΩ on-resistance in a 3.3 mm × 3.3 mm leadless PowerPAK 1212-8S package, enabling high-current switching with minimal conduction loss. Its optimized Qgd/Qgs ratio and low Crss (120 pF) reduce switching losses and improve EMI behavior in hard-switched topologies.
The device features 100% Rg and UIS tested reliability, with VGS(th) = 0.6–1.5 V and tight threshold voltage distribution across temperature. Its body diode exhibits trr = 40–80 ns and Qrr = 30–60 nC, supporting efficient synchronous rectification without external Schottky replacement in buck converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum drain-source blocking voltage compatible with 12 V input rails and transient margin in point-of-load converters. |
| RDS(on) @ VGS = 10 V | 0.92 mΩ max - Enables <1 W conduction loss at 100 A, critical for high-current CPU/GPU VRMs. |
| RDS(on) @ VGS = 4.5 V | 1.15 mΩ max - Ensures low-loss operation with standard logic-level gate drivers in battery-powered systems. |
| Qg @ VGS = 4.5 V | 36 nC typ. - Reduces gate drive power and enables >1 MHz switching in compact DC/DC designs. |
| ID (continuous, TC = 25 °C) | 210 A - Supports single-device implementation in high-power server or telecom POL modules. |
| RthJC | 1.5 °C/W typical - Allows direct thermal coupling to heatsink or PCB copper for junction temperature control under full load. |
| VSD @ IS = 5 A | 0.71–1.1 V - Low forward voltage minimizes reverse recovery loss during synchronous rectification. |
Pinout & Package
SiSS80DN-T1-GE3 uses the leadless PowerPAK® 1212-8S package (3.3 mm × 3.3 mm footprint, 0.75 mm height), with exposed drain pads on bottom side for optimal thermal and electrical performance. The top-side marking includes "SISS80DN" and date code; no plating on singulated copper tips per Vishay specification.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications. |
| 5, 6, 7, 8 | Drain (D) | Four exposed drain terminals on bottom side provide low-inductance, low-resistance connection to PCB ground plane or heatsink. |
| G (top-center pad) | Gate (G) | Single top-side gate pad enables compact gate loop layout and minimizes parasitic inductance for fast switching. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers 0.92 mΩ RDS(on) at 10 V in 10.89 mm² footprint-enables higher power density than prior-gen 1212 packages. |
| Optimized Qgd/Qgs ratio | Reduces Miller plateau time and improves controllability during hard switching, lowering EMI and dv/dt-induced shoot-through risk. |
| 100% UIS tested | Guarantees ruggedness against inductive switching stress up to 40 A single-pulse avalanche current (EAS = 80 mJ). |
| Lead (Pb)-free & halogen-free | Complies with RoHS 2011/65/EU and Vishay's material categorization standard (doc# 99912) for industrial and automotive use. |
| PowerPAK 1212-8S thermal design | 1.5 °C/W RthJC enables >200 A operation with minimal case-to-heatsink thermal interface resistance. |
Applications
| Server Point-of-Load Converter | High-Current Battery Protection Circuit |
|---|---|
Use Scenario: 48 V to 0.8 V / 200 A conversion for AI accelerator cards using multiphase buck topology. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in high-side/low-side switch pair, operating at 500 kHz–1 MHz with 4.5 V gate drive. Use Value: 1.15 mΩ RDS(on) at 4.5 V reduces conduction loss by >35% vs. legacy 3.3 mΩ devices, improving system efficiency from 92% to 94.2% at full load. |
Use Scenario: Bidirectional current path control in 12 V/48 V battery management systems with active cell balancing and short-circuit protection. IC Role / Device Role / Timing Role: High-current load switch for battery disconnect, controlled via microcontroller GPIO with 2.5 V logic compatibility. Use Value: 3.0 mΩ RDS(on) at 2.5 V ensures reliable turn-on with low-power MCU outputs, limiting voltage drop to <150 mV at 50 A discharge current. |
| Telecom Rectifier Module | Industrial Motor Drive Half-Bridge |
Use Scenario: 54 V input to 12 V output telecom rectifier with >96% peak efficiency requirement and forced-air cooling. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved LLC resonant converter, handling 150 A RMS current. Use Value: 0.92 mΩ RDS(on) at 10 V and 1.5 °C/W RthJC enable stable 150 °C junction temperature under full load, eliminating need for additional heatsinking. |
Use Scenario: Half-bridge power stage in 24 V BLDC motor driver for factory automation, requiring 100 A peak phase current. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, driven by isolated gate driver with 10 V supply. Use Value: 40 ns turn-off delay and 8 ns fall time minimize dead-time losses, while 300 A pulsed rating supports motor stall conditions without failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 20 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLHS6342TRPBF | RDS(on) = 1.25 mΩ @ 4.5 V; Qg = 42 nC; PowerPAK® SO-8 package (larger 4.9 × 6.0 mm footprint) | Higher RDS(on) and larger package limit current density in space-constrained VRMs. | Preferred where SO-8 layout reuse is required and thermal budget allows ~15% higher conduction loss. |
| DMTH2006LPSQ-13 | RDS(on) = 0.85 mΩ @ 4.5 V; Qg = 48 nC; PowerDI™ 5060 package (5.0 × 6.0 mm); AEC-Q101 qualified | Automotive-qualified but larger footprint and higher Qg increase switching loss in high-frequency POLs. | Selected for automotive-grade designs needing qualification, not for highest-density server or telecom applications. |
Compared with IRLHS6342TRPBF and DMTH2006LPSQ-13, SiSS80DN-T1-GE3 offers the lowest RDS(on) per mm² (0.085 mΩ/mm²), smallest footprint, and best Qg/RDS(on) ratio-making it optimal for thermally constrained, high-frequency, high-current DC/DC stages where layout area and efficiency are prioritized over automotive qualification or legacy package compatibility.
Availability
SiSS80DN-T1-GE3 is available at Aetrix Electronics and suitable for server point-of-load converters, telecom rectifier modules, and high-current battery management systems requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.
Supply support for SiSS80DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, thermal reliability, and miniaturization.
SiSS80DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET product line, engineered specifically for high-current, high-frequency DC/DC conversion in datacenter, telecom, and industrial power systems where low RDS(on), fast switching, and thermal robustness are critical.
FAQ
What is the maximum continuous drain current for SiSS80DN-T1-GE3 at 70 °C case temperature?
The maximum continuous drain current for SiSS80DN-T1-GE3 is 169 A when the case temperature (TC) is maintained at 70 °C. This rating reflects derating from the 210 A value at 25 °C due to thermal limitations, and is validated under steady-state conditions with proper PCB copper area and airflow. SiSS80DN-T1-GE3 must be mounted on ≥1" × 1" FR4 board per datasheet note b to achieve this rating.
Does SiSS80DN-T1-GE3 support 2.5 V gate drive, and what is its RDS(on) at that voltage?
Yes, SiSS80DN-T1-GE3 is fully specified for 2.5 V gate drive, with RDS(on) = 3.0 mΩ maximum at VGS = 2.5 V and ID = 10 A. This enables direct interfacing with low-voltage microcontrollers and logic ICs without level-shifting, making SiSS80DN-T1-GE3 suitable for battery-powered load switching and portable equipment where gate drive voltage is constrained.
What is the thermal resistance from junction to case (RthJC) for SiSS80DN-T1-GE3, and how does it impact heatsink design?
SiSS80DN-T1-GE3 has a typical junction-to-case thermal resistance (RthJC) of 1.5 °C/W, with a maximum of 1.9 °C/W. This low value allows efficient heat transfer from the silicon die directly to the PCB copper or external heatsink through the exposed drain pads. When designing thermal management, SiSS80DN-T1-GE3 requires minimal thermal interface material and supports high-power operation even with modest heatsink surface area.
Is SiSS80DN-T1-GE3 suitable for synchronous rectification in a 500 kHz buck converter?
Yes, SiSS80DN-T1-GE3 is explicitly designed for synchronous rectification, with low Qg (36 nC typ. at 4.5 V), low Qgd/Qgs ratio, and fast switching times (td(off) = 42 ns typ., tf = 8 ns typ. at VGEN = 10 V). These characteristics minimize switching loss and ensure clean commutation at 500 kHz in buck converters, as confirmed in Vishay's application notes for synchronous buck topologies.
What packaging and compliance certifications apply to SiSS80DN-T1-GE3?
SiSS80DN-T1-GE3 is supplied in tape-and-reel format (T1) with Pb-free and halogen-free construction per RoHS Directive 2011/65/EU and Vishay's material categorization standard (doc# 99912). The "GE3" suffix denotes Vishay's green environmental compliance grade, including exemption 7a for lead in copper alloy leads. No additional automotive or military qualifications are applied to this variant.
SISS80DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® 1212-8S
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 58.3A (Ta), 210A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 0.92mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 122 nC @ 10 V
- Vgs (Max):
- +12V, -8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6450 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 65W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8S
SISS80DN-T1-GE3 FAQ
1.How can I place an order for SISS80DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SISS80DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SISS80DN-T1-GE3 reliable?
The price and inventory of SISS80DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS80DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SISS80DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS80DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SISS80DN-T1-GE3?
SISS80DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SISS80DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SISS80DN-T1-GE3?
For technical support, including SISS80DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS80DN-T1-GE3 requirements.
6.How does Aetrix verify that SISS80DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SISS80DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS80DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SISS80DN-T1-GE3?
All SISS80DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS80DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SISS80DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SISS80DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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