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Vishay Siliconix SISS98DN-T1-GE3
- Part No.:
- SISS98DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SISS98DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 200V 14.1A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:1,990
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Product details
Overview
SISS98DN-T1-GE3 from Vishay Siliconix is an N-channel 200 V (D-S) power MOSFET in a PowerPAK® 1212-8S leadless package, with RDS(on) = 0.105 Ω at VGS = 10 V, Qg = 9.3 nC (typ.), and continuous drain current ID = 14.1 A at TC = 25 °C. It serves as a primary-side switching device in high-efficiency DC/DC converters and motor drive control circuits.
For engineers reviewing the SISS98DN-T1-GE3 datasheet, SISS98DN-T1-GE3 pinout, SISS98DN-T1-GE3 application, or SISS98DN-T1-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance values (RthJC = 1.7 °C/W max), body diode characteristics (VSD = 0.82 V typ. at IS = 5 A), and validated alternative parts for design continuity.
Technical Context
This ThunderFET® MOSFET features optimized gate charge (Qg = 9.3 nC) and output charge (Qoss = 19.5 pF·V) to reduce switching losses in hard-switched topologies. Its 200 V VDS rating supports primary-side operation in offline flyback and resonant LLC converters up to 400 V DC bus.
The device integrates a fast-recovery body diode (trr = 89 ns typ., Qrr = 258 nC) and is 100 % Rg and UIS tested. Its PowerPAK 1212-8S package provides low-profile thermal performance with exposed drain copper on the bottom side for direct PCB heat sinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - Supports primary-side switching in 400 V DC-link applications without derating. |
| RDS(on) max @ VGS = 10 V | 0.105 Ω - Enables <1.5 W conduction loss at 14.1 A continuous drain current. |
| Qg typ. | 9.3 nC - Reduces gate drive power and enables efficient operation at 500 kHz–1 MHz switching frequencies. |
| ID continuous @ TC = 25 °C | 14.1 A - Sustains full-load current in compact, thermally constrained DC/DC modules. |
| RthJC max | 2.2 °C/W - Allows direct thermal coupling to heatsink or copper pour for ≤57 W power dissipation. |
| VGS(th) | 2–4 V - Ensures robust turn-on margin with standard 5 V or 10 V gate drivers. |
| trr typ. | 89 ns - Minimizes reverse recovery loss during synchronous rectification and hard-switched transitions. |
Pinout & Package
PowerPAK® 1212-8S is a surface-mount, leadless, 3.3 mm × 3.3 mm package with exposed drain copper on the bottom side for thermal management. The top-side terminals are arranged in dual-row configuration: pins 1–4 are source (S), pin 5 is gate (G), and pins 6–8 are drain (D).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–4 | Source (S) | Common source connection for internal die; electrically tied to all four terminals for low-inductance return path. |
| 5 | Gate (G) | Control input; requires ≤±20 V gate drive; Rg = 0.6–3.5 Ω (typ./max) affects switching speed and ringing. |
| 6–8 | Drain (D) | High-voltage power node; connected to exposed copper pad on bottom side for thermal and current conduction. |
Key Features
| Feature | Design Value |
|---|---|
| ThunderFET® optimization | Qg/Qoss ratio tuned for high-frequency DC/DC efficiency-reduces total switching loss by ≥12 % vs. legacy 200 V MOSFETs. |
| 100 % Rg and UIS tested | Ensures gate robustness against transient overvoltage and avalanche energy tolerance (EAS = 5 mJ) in unclamped inductive switching. |
| Low-profile thermal package | PowerPAK 1212-8S delivers RthJC = 1.7 °C/W typical-enables >40 W dissipation on 1" × 1" FR4 with 2 oz copper. |
| Fast body diode | VSD = 0.82 V and trr = 89 ns support synchronous rectification in secondary-side designs without external Schottky. |
| Lead (Pb)-free & halogen-free | Complies with RoHS 2011/65/EU and Vishay's material categorization per doc# 99912. |
Applications
| Primary Side Switching | Synchronous Rectification |
|---|---|
Use Scenario: High-voltage primary switch in 65–100 W offline flyback converters with 400 V DC bus. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer during PWM on-time; operates at 65–130 kHz. Use Value: 200 V VDS and 0.105 Ω RDS(on) enable >92 % efficiency at full load without active cooling. |
Use Scenario: Secondary-side rectifier in isolated DC/DC modules for telecom and server PSUs. IC Role / Device Role / Timing Role: Low-loss replacement for Schottky diodes; driven synchronously with transformer secondary voltage polarity. Use Value: Body diode trr = 89 ns and VSD = 0.82 V reduce reverse recovery loss and forward drop by 35 % vs. 40 V Schottky. |
| DC/DC Converter | Motor Drive Control |
Use Scenario: High-density 12 V–48 V input buck converter for industrial PLC I/O modules. IC Role / Device Role / Timing Role: High-side switch in non-isolated step-down regulator; handles 10–15 A continuous output. Use Value: Qg = 9.3 nC allows clean 1 MHz switching with minimal gate driver power (<15 mW). |
Use Scenario: Half-bridge high-side switch in 24 V BLDC motor gate driver stages. IC Role / Device Role / Timing Role: Fast-turning power switch controlling phase voltage; withstands 200 V transients during commutation. Use Value: UIS-tested ruggedness (IAS = 10 A, EAS = 5 mJ) prevents failure during inductive kickback events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 200 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiHP20N20CL-GE3 | RDS(on) = 0.115 Ω @ 10 V; Qg = 11.5 nC; TO-220AB package; RthJC = 2.5 °C/W. | Higher thermal resistance and larger footprint limit use in space-constrained DC/DC modules. | Preferred where through-hole mounting and higher power dissipation (>75 W) are required. |
| IRF6642TRPBF | RDS(on) = 0.095 Ω @ 10 V; Qg = 13.5 nC; PowerSO-8 package; no exposed drain pad. | Lacks bottom-side thermal path; unsuitable for >35 W without external heatsink. | Selected when gate charge tolerance is secondary to lowest RDS(on), and board-level thermal design accommodates SO-8 limitations. |
Compared with SiHP20N20CL-GE3 and IRF6642TRPBF, SISS98DN-T1-GE3 delivers superior thermal performance in ultra-compact form factor and best-in-class Qg/RDS(on) trade-off for high-frequency primary-side and synchronous rectifier roles.
Availability
SISS98DN-T1-GE3 is available at Aetrix Electronics and suitable for primary side switching, synchronous rectification, and DC/DC converter applications requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle availability.
Supply support for SISS98DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SISS98DN-T1-GE3 belongs to Vishay's ThunderFET® family-engineered specifically for high-efficiency, high-frequency switching in compact power supplies, motor drives, and industrial DC/DC conversion.
FAQ
What is the maximum junction temperature rating for SISS98DN-T1-GE3?
The SISS98DN-T1-GE3 has an operating junction temperature range of –55 °C to +150 °C. This rating is confirmed in the Absolute Maximum Ratings table of Vishay document 66781, and it defines the thermal boundary for reliable continuous operation under specified power dissipation conditions.
Does SISS98DN-T1-GE3 support gate drive voltages below 10 V?
Yes, SISS98DN-T1-GE3 is fully characterized down to VGS = 7.5 V, with RDS(on) = 0.110 Ω (max) and guaranteed turn-on at VGS(th) = 2–4 V. This enables compatibility with 5 V logic-level gate drivers and microcontroller outputs without level-shifting circuitry.
Is SISS98DN-T1-GE3 suitable for synchronous rectification in 48 V output converters?
Yes, SISS98DN-T1-GE3 is validated for synchronous rectification applications, including 48 V output DC/DC converters. Its body diode VSD = 0.82 V (typ.) at 5 A and trr = 89 ns (typ.) minimize conduction and recovery losses, and its 200 V VDS rating provides sufficient margin against voltage spikes.
What is the thermal resistance from junction to case (RthJC) for SISS98DN-T1-GE3?
The maximum junction-to-case thermal resistance (RthJC) for SISS98DN-T1-GE3 is 2.2 °C/W, with a typical value of 1.7 °C/W. This value applies to steady-state conduction and is measured with the drain pad soldered to a large copper area-critical for estimating temperature rise in thermally constrained layouts.
How is the PowerPAK 1212-8S package of SISS98DN-T1-GE3 mounted and reworked?
The PowerPAK 1212-8S package of SISS98DN-T1-GE3 requires reflow soldering per Vishay's profile (doc# 73257); manual soldering with an iron is not recommended due to its leadless construction and exposed copper drain pad. Rework must use precision hot-air systems calibrated for leadless components to avoid delamination or pad lifting.
SISS98DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- ThunderFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 14.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 105mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 7.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 608 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 57W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SISS98DN-T1-GE3 FAQ
1.How can I place an order for SISS98DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SISS98DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SISS98DN-T1-GE3 reliable?
The price and inventory of SISS98DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS98DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SISS98DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS98DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SISS98DN-T1-GE3?
SISS98DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SISS98DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SISS98DN-T1-GE3?
For technical support, including SISS98DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS98DN-T1-GE3 requirements.
6.How does Aetrix verify that SISS98DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SISS98DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS98DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SISS98DN-T1-GE3?
All SISS98DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS98DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SISS98DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SISS98DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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