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Vishay Siliconix SIZF928DT-T1-GE3
- Part No.:
- SIZF928DT-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerWDFN
- Datasheet:
-
SIZF928DT-T1-GE3.pdf
- Description:
- MOSFET 2N-CH 30V 33A 8POWERPAIR
- Quantity:
- Payment:
- Shipping:
Inventory:6,064
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Product details
Overview
SIZF928DT-T1-GE3 from Vishay Siliconix is a dual N-channel 30 V TrenchFET® Gen V power MOSFET in PowerPAIR® 6 × 5F package, featuring channel-1 RDS(on) = 2.45 mΩ @ 10 V and channel-2 RDS(on) = 0.75 mΩ @ 10 V, Qg = 8.5 nC (Ch-1) / 35 nC (Ch-2), and rated for CPU core power and synchronous buck converter applications.
For engineers reviewing the SIZF928DT-T1-GE3 datasheet, SIZF928DT-T1-GE3 pinout, SIZF928DT-T1-GE3 application, or SIZF928DT-T1-GE3 equivalent, this device delivers asymmetric dual-channel performance optimized for high-efficiency point-of-load (POL) conversion with low conduction loss in the high-current path and fast switching in the control path.
Technical Context
This dual MOSFET integrates two independently rated N-channel silicon die in a single leadless PowerPAIR® 6 × 5F package: Channel-1 supports 88 A continuous drain current at TC = 25 °C with 2.45 mΩ RDS(on), while Channel-2 handles 248 A at same condition with 0.75 mΩ RDS(on). Both channels share 30 V VDS, ±12 V/16 V VGS, and operate across -55 °C to +150 °C junction temperature range.
The device uses trench-based silicon process with 100 % Rg and UIS testing, and features asymmetric gate charge profiles - Channel-1 has lower Qg (8.5 nC @ 4.5 V) for fast turn-on in high-side switching roles, while Channel-2's higher Qg (35 nC @ 4.5 V) supports robust low-side conduction in synchronous rectification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V per channel - defines maximum blocking voltage in DC/DC primary-side and synchronous rectifier paths |
| RDS(on) Ch-1 @ 10 V | 2.45 mΩ - enables <1 W conduction loss at 20 A in high-side switch position of POL converters |
| RDS(on) Ch-2 @ 10 V | 0.75 mΩ - minimizes I²R loss under 100+ A load currents typical in server CPU VRMs |
| Qg Ch-1 @ 4.5 V | 8.5 nC - supports <20 ns turn-on delay and <10 ns fall time for high-frequency (>1 MHz) PWM control |
| Qg Ch-2 @ 4.5 V | 35 nC - balances switching speed and gate drive strength for low-side synchronous rectification |
| TJ Range | -55 °C to +150 °C - ensures operation in thermally demanding server and telecom chassis environments |
| RthJC Ch-1 / Ch-2 | 4.4 °C/W / 1.7 °C/W - enables direct thermal coupling to PCB copper for passive cooling in space-constrained POL modules |
Pinout & Package
PowerPAIR® 6 × 5F is a leadless surface-mount package with exposed copper thermal pads on bottom side; dimensions: 6.0 mm × 5.0 mm × 0.75 mm (L × W × H); eight terminals arranged in dual-row configuration with symmetric pin numbering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source-1 / Drain-2 | Common node between Channel-1 source and Channel-2 drain - used for half-bridge mid-point connection |
| 2 | Gate-1 | Control input for Channel-1 - requires <8.5 nC charge for full enhancement at 4.5 V |
| 3 | Drain-1 | High-side switch output - connects to input rail in buck topology |
| 4 | Source-2 | Low-side return path - ties to ground or output capacitor negative terminal |
| 5 | Gate-2 | Control input for Channel-2 - driven with higher current capability due to 35 nC Qg |
| 6 | Drain-2 | Low-side switch output - connects to output inductor and load |
| 7–8 | Thermal Pad (exposed copper) | Primary heat dissipation path - must be soldered to large PCB copper area for RthJA ≤ 28 °C/W |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen V silicon | Enables 0.75 mΩ RDS(on) in compact PowerPAIR® package without requiring external heatsink |
| Asymmetric channel optimization | Channel-1 (fast-switching) and Channel-2 (high-current) allow independent gate drive tuning in synchronous buck designs |
| 100 % Rg and UIS tested | Guarantees gate resistance consistency (0.2–2 Ω Ch-1; 0.15–1.5 Ω Ch-2) and ruggedness against unclamped inductive switching stress |
| Lead (Pb)-free and halogen-free | Meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile requirements up to 260 °C peak |
| Exposed thermal pad design | Provides direct thermal path from die to PCB - reduces RthJC to 1.7 °C/W (Ch-2), enabling >200 W power handling in 1" × 1" layout |
Applications
| CPU Core Power Delivery | Synchronous Buck Converter |
|---|---|
|
Use Scenario: High-current, multi-phase VRM supplying modern x86 and ARM processors in servers and workstations. IC Role / Device Role / Timing Role: SIZF928DT-T1-GE3 serves as integrated high-side/low-side pair per phase - Channel-1 as control FET, Channel-2 as power FET. Use Value: 0.75 mΩ RDS(on) on Channel-2 cuts conduction loss by >40 % vs. discrete 3.5 mΩ solutions, improving full-load efficiency by 1.2 % at 150 A. |
Use Scenario: Isolated or non-isolated step-down regulator for FPGA, ASIC, or GPU power rails in telecom infrastructure. IC Role / Device Role / Timing Role: SIZF928DT-T1-GE3 implements half-bridge topology with Channel-1 driving high-side and Channel-2 conducting low-side current. Use Value: Asymmetric Qg (8.5 nC / 35 nC) allows optimized gate driver selection - reducing dead-time losses while maintaining ZVS capability above 500 kHz. |
| Computer/Server Peripherals | Telecom DC/DC Conversion |
|
Use Scenario: Compact 12 V-to-1 V POL module for PCIe add-in cards, NVMe SSDs, and memory buffers. IC Role / Device Role / Timing Role: SIZF928DT-T1-GE3 operates as primary switching pair in multiphase interleaved buck stage. Use Value: PowerPAIR® 6 × 5F footprint (6 mm × 5 mm) saves >35 % board area versus dual-SO-8 layout, enabling <10 mm² per phase. |
Use Scenario: 48 V input DC/DC converter powering baseband units and remote radio heads in 5G macro cells. IC Role / Device Role / Timing Role: SIZF928DT-T1-GE3 functions as secondary-side synchronous rectifier in LLC resonant converter output stage. Use Value: 0.75 mΩ RDS(on) at 10 V enables >95 % efficiency at 60 A output, reducing thermal load on heatsink by 8 W vs. Schottky diode solution. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiZF904DT-T1-GE3 | Lower RDS(on) (0.55 mΩ Ch-2 @ 10 V), same 30 V rating, but higher Qg (42 nC Ch-2 @ 4.5 V) | Better conduction loss at ultra-high current (>300 A), but requires stronger gate driver and increases switching loss above 1 MHz | Select when optimizing for peak efficiency at >200 A loads and gate drive capability supports ≥2 A peak current |
| IRFH7107TRPBF | Single-channel 30 V MOSFET (0.72 mΩ @ 10 V), SO-8 package, no integrated dual-channel topology | Requires two discrete devices and additional layout area; lacks internal source-drain common node for half-bridge integration | Select only when design mandates SO-8 footprint or requires independent thermal management per channel |
Compared with SiZF904DT-T1-GE3, SIZF928DT-T1-GE3 trades 0.2 mΩ higher RDS(on) for 7 nC lower Qg - favoring high-frequency POL designs where switching loss dominates. Versus IRFH7107TRPBF, it eliminates interconnect inductance and halves PCB footprint by integrating both channels in one PowerPAIR® package.
Availability
SIZF928DT-T1-GE3 is available at Aetrix Electronics and suitable for CPU core power delivery, synchronous buck converter design, and telecom DC/DC conversion requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for SIZF928DT-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency silicon solutions.
The SIZF928DT-T1-GE3 belongs to Vishay's PowerPAIR® Gen V TrenchFET® family, engineered specifically for high-density, high-efficiency point-of-load and multiphase VRM applications in datacenter and telecom infrastructure.
FAQ
What is the maximum continuous drain current rating for each channel of the SIZF928DT-T1-GE3 at TC = 25 °C?
The SIZF928DT-T1-GE3 specifies 88 A for Channel-1 and 248 A for Channel-2 at case temperature 25 °C. These values reflect steady-state conduction capability under ideal heatsinking conditions and are validated per Vishay's absolute maximum ratings table. Derating applies above 25 °C case temperature - e.g., Channel-2 drops to 198 A at TC = 70 °C. The SIZF928DT-T1-GE3 datasheet confirms these ratings in the Absolute Maximum Ratings section on page 1.
Does the SIZF928DT-T1-GE3 support 4.5 V gate drive for both channels, and what are the corresponding RDS(on) values?
Yes, the SIZF928DT-T1-GE3 is fully characterized at VGS = 4.5 V: Channel-1 RDS(on) is 3.80 mΩ max, and Channel-2 RDS(on) is 1.20 mΩ max. These values enable logic-level compatibility with standard 5 V microcontroller or PWM controller outputs. The SIZF928DT-T1-GE3 specification table on page 2 confirms these parameters under "RDS(on) max. (Ω) at VGS = 4.5 V".
How is thermal management handled in the PowerPAIR® 6 × 5F package of the SIZF928DT-T1-GE3?
The SIZF928DT-T1-GE3 uses an exposed copper thermal pad (pins 7–8) that must be soldered directly to a large PCB copper pour to achieve specified RthJC values: 4.4 °C/W (Ch-1) and 1.7 °C/W (Ch-2). Vishay recommends minimum 28 mm² copper area per channel and via stitching to inner ground planes. The SIZF928DT-T1-GE3 thermal resistance table on page 1 and PAD pattern document #76480 define exact land patterns.
What is the body diode reverse recovery performance of the SIZF928DT-T1-GE3, and why does it matter in synchronous buck designs?
Channel-1 exhibits trr = 20–40 ns and Qrr = 10–20 nC; Channel-2 shows trr = 50–100 ns and Qrr = 50–100 nC. Low Qrr minimizes shoot-through risk and reduces switching loss during dead-time transitions. In synchronous buck topologies, this allows tighter dead-time control and improves light-load efficiency. The SIZF928DT-T1-GE3 datasheet reports these values in the "Drain-Source Body Diode Characteristics" section on page 3.
Is the SIZF928DT-T1-GE3 qualified for automotive applications, and what is its temperature rating?
No, the SIZF928DT-T1-GE3 is not AEC-Q101 qualified and is intended for industrial/commercial use only. Its operating junction temperature range is -55 °C to +150 °C, matching server and telecom thermal requirements but lacking automotive-specific reliability testing (e.g., HTOL, ESD, vibration). Vishay explicitly positions this part for CPU core power and POL applications - not automotive ECUs or ADAS systems. The SIZF928DT-T1-GE3 datasheet states this in the "Product Summary" and "Applications" sections on page 1.
SIZF928DT-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- 8-PowerWDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc)
- Rds On (Max) @ Id, Vgs:
- 2.45mOhm @ 10A, 10V, 0.75mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- Power - Max:
- 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-PowerPair® (6x5)
SIZF928DT-T1-GE3 FAQ
1.How can I place an order for SIZF928DT-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIZF928DT-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIZF928DT-T1-GE3 reliable?
The price and inventory of SIZF928DT-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIZF928DT-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIZF928DT-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIZF928DT-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIZF928DT-T1-GE3?
SIZF928DT-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIZF928DT-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIZF928DT-T1-GE3?
For technical support, including SIZF928DT-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIZF928DT-T1-GE3 requirements.
6.How does Aetrix verify that SIZF928DT-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIZF928DT-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIZF928DT-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIZF928DT-T1-GE3?
All SIZF928DT-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIZF928DT-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIZF928DT-T1-GE3 part is unused and in its original packaging.
Return procedure for SIZF928DT-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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