Microchip Technology SM1615E3/TR13

Overview

SM1615E3/TR13 from Microsemi (now Microchip) is a unidirectional 8-line transient voltage suppressor (TVS) diode array in SO-16 package, rated for 300 W peak pulse power (8/20 µs), 15 V standoff voltage (V_WM), and clamping voltage of 24 V at 1 A - designed to protect 3.3 V to 24 V interfaces including DRAM, SRAM, and low-voltage I/O transceivers against ESD (IEC 61000-4-2), EFT (IEC 61000-4-4), and lightning-induced surges.

For engineers reviewing the SM1615E3/TR13 datasheet, SM1615E3/TR13 pinout, SM1615E3/TR13 application, or SM1615E3/TR13 equivalent, this device serves as board-level surge protection for high-speed digital interfaces where low capacitance (400 pF @ 0 V), precise standoff matching, and thermal stability across –55°C to +150°C are critical selection criteria.

Technical Context

The SM1615E3/TR13 integrates eight independent unidirectional TVS diodes in a single SO-16 surface-mount package, each configured with anode-to-rail and cathode-to-line topology for rail-clamped transient suppression. It operates with a 15 V working maximum voltage (V_WM) and guaranteed breakdown at ≥16.7 V (V_BR @ 1 mA), enabling safe margin above 13.3 V nominal 12 V–15 V system rails.

Its clamping performance is characterized at two current levels: 24 V max at 1 A and 30 V max at 5 A (per line), with leakage current ≤1 µA at V_WM and temperature coefficient of V_BR at +13 mV/°C - confirming positive drift suitable for high-temperature industrial environments.

Key Specifications

Pinout & Package

Molded SO-16 surface-mount package (JEDEC MS-013AC), 10.10 mm × 4.01 mm × 1.75 mm, UL 94V-0 rated epoxy encapsulation, pin #1 identified by dot marking on top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Compared with SMAJ15A and SP1003-010, SM1615E3/TR13 uniquely balances 15 V standoff, 300 W per-line surge capacity, and 400 pF capacitance in a single SO-16 footprint - making it the most space- and cost-efficient choice for protecting multi-line 15 V interfaces without compromising thermal derating or ESD immunity.

Availability

SM1615E3/TR13 is available at Aetrix Electronics and suitable for DDR memory subsystems, industrial PLC I/O modules, RS-485 communication ports, and automotive infotainment display links requiring stable component supply and long-term production continuity.

Supply support for SM1615E3/TR13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (acquired by Microchip Technology in 2018) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and radiation-hardened components for aerospace, defense, and industrial markets.

The SM16XX TVSarray™ series was developed specifically for board-level transient suppression in high-density digital systems - emphasizing low capacitance, precise V_WM tolerance, and thermal resilience across extended temperature ranges.

FAQ

What is the polarity configuration of SM1615E3/TR13?

The SM1615E3/TR13 is a unidirectional TVS diode array. Each of its eight channels connects anode to the protected I/O line and cathode to a common 15 V supply rail (pins 2,4,6,8,10,12,14,16). This configuration enables rail-synchronized clamping without reverse conduction, making SM1615E3/TR13 ideal for protecting unidirectional or DC-biased signal paths such as memory address/data buses and 15 V logic interfaces.

Does SM1615E3/TR13 meet IEC 61000-4-2 and IEC 61000-4-4 standards?

Yes, SM1615E3/TR13 is explicitly designed and characterized to meet IEC 61000-4-2 (ESD immunity up to ±15 kV contact) and IEC 61000-4-4 (electrical fast transients up to 4 kV) requirements. Its 300 W peak pulse power rating (8/20 µs waveform) and sub-µA leakage at 15 V V_WM ensure compliance when implemented with proper PCB layout - confirming SM1615E3/TR13 as a validated solution for board-level surge protection in certified industrial and telecom equipment.

What is the meaning of the "E3/TR13" suffix in SM1615E3/TR13?

The "E3" denotes tape-and-reel packaging per EIA-481-1-A standard, and "TR13" specifies a 13-inch reel containing 2,500 units - consistent with Microsemi's packaging nomenclature in MSC0885.PDF. This distinguishes SM1615E3/TR13 from tube-packaged variants (e.g., SM1615) and confirms its suitability for high-volume SMT assembly. The underlying electrical and thermal specifications remain identical across packaging variants.

Can SM1615E3/TR13 be used to protect bidirectional data lines like I²C or SPI?

SM1615E3/TR13 is unidirectional and therefore not recommended for true bidirectional buses like I²C or SPI without external biasing. Its cathodes must be tied to a stable positive rail (e.g., 15 V), limiting clamping to positive transients only. For bidirectional protection, Microsemi's SM1615C (bidirectional variant, device marking MBH) is specified - confirming that SM1615E3/TR13 should only be applied where signal polarity is known and rail-referenced clamping is acceptable.

What is the thermal derating behavior of SM1615E3/TR13 above 25°C?

SM1615E3/TR13 exhibits a positive temperature coefficient for breakdown voltage (+13 mV/°C), meaning V_BR increases linearly with junction temperature - preserving clamping margin at elevated temperatures. Peak pulse power derating follows standard SO-16 thermal resistance curves: full 300 W rating applies up to +85°C ambient; above that, linear derating begins until 0 W at +150°C. This behavior is documented in MSC0885.PDF and confirmed in SM1615E3/TR13's thermal characterization data.