Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SM6S11ATHE3/I

Part No.:
SM6S11ATHE3/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-218AC
Datasheet:
AetrixSM6S11ATHE3/I.pdf
Description:
TVS DIODE 11VWM 18.2VC DO218AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,588

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SM6S11ATHE3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for automotive load dump protection. It features a 12.2 V minimum breakdown voltage (VBR), 11.0 V standoff voltage (VWM), 4600 W peak pulse power (10/1000 µs), AEC-Q101 qualification, and DO-218AC package with heatsink-anode polarity.

For engineers reviewing the SM6S11ATHE3/I datasheet, SM6S11ATHE3/I pinout, SM6S11ATHE3/I application, or SM6S11ATHE3/I equivalent, this device serves as a high-reliability, high-temperature (TJ = 175 °C) TVS for 12 V automotive power rail surge suppression under ISO7637-2 conditions - especially where low leakage (<10 µA at VWM) and low forward voltage (<1.9 V @ 100 A) are critical.

Technical Context

The SM6S11ATHE3/I employs passivated anisotropic rectifier technology to achieve stable clamping performance across temperature. Its junction-to-case thermal resistance is 0.95 °C/W, enabling effective heat dissipation into a metal heatsink - essential for sustained surge handling in engine bay environments.

It operates exclusively in unidirectional mode with anode-connected heatsink configuration, supporting robust load dump transients up to 10 ms exponential waveform per Fig. 2. The device meets MSL Level 1 (245 °C reflow peak) and JESD201 Class 2 whisker resistance requirements.

Key Specifications

ParameterValue and Actual Design Meaning
VBR (min)12.2 V - ensures reliable triggering above nominal 12 V system voltage before damaging transients reach downstream circuitry
VWM11.0 V - maximum continuous reverse operating voltage without significant leakage current
IPPM (10/1000 µs)253 A - peak surge current capability corresponding to 4600 W clamping power
VC @ IPPM18.2 V - maximum clamped voltage during rated surge, limiting stress on protected ICs
TJ max+175 °C - enables operation in under-hood automotive locations without derating
IFSM600 A - single half-sine surge rating (8.3 ms), supporting high-energy inductive switching events
RθJC0.95 °C/W - allows predictable thermal design when mounted to a heatsink

Pinout & Package

Package: DO-218AC - surface-mount, anode-heatsink configuration with matte tin-plated leads; compliant with UL 94 V-0, MSL Level 1, and JESD201 Class 2 whisker testing.

Pin/TerminalCircuit RoleDesign Meaning
Lead 1AnodeConnected internally to metal heatsink tab; must be soldered to PCB copper pour for thermal and electrical reference
Lead 2 / Metal HeatsinkAnode (common)Primary thermal path and low-inductance return path; functions as both mechanical anchor and current-carrying terminal

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive-grade reliability including temperature cycling, HTRB, and ESD per AEC standard
Junction passivation optimizedStable VBR drift <0.072 %/°C ensures consistent clamping across -55 °C to +175 °C operating range
Low leakage at VWM≤10 µA at 11.0 V and 25 °C - minimizes standby power loss in always-on vehicle modules
High surge capability4600 W (10/1000 µs) and 3600 W (10/10,000 µs) - exceeds ISO7637-2 Pulse 5a/b requirements for 12 V systems
Heatsink-anode polarityEnables direct thermal coupling to chassis ground while maintaining unidirectional conduction path

Applications

Automotive Load Dump ProtectionEngine Control Unit (ECU) Power Input

Use Scenario: Voltage spikes up to 40 V induced by alternator field coil de-energization during battery disconnect in 12 V vehicles.

IC Role / Device Role / Timing Role: Primary clamping device placed at main power entry point of body control module or infotainment head unit.

Use Value: Limits transient voltage to ≤18.2 V within 100 ns, protecting downstream DC/DC converters and microcontrollers rated for 20 V absolute maximum.

Use Scenario: High-current switching noise and back-EMF from fuel injectors, ignition coils, and solenoids coupled onto ECU 12 V supply rails.

IC Role / Device Role / Timing Role: Fast-response overvoltage clamp located immediately upstream of input filter capacitor bank.

Use Value: Absorbs 253 A surges without degradation, maintaining VIN stability during repeated cold-cranking and load-dump events per ISO7637-2.

ADAS Camera Module ProtectionTelematics Control Unit (TCU) Power Interface

Use Scenario: Transient coupling from adjacent high-power actuators (e.g., radar motor drives) into low-voltage camera power lines.

IC Role / Device Role / Timing Role: Secondary-level TVS on 5 V or 3.3 V internal rail, used in conjunction with primary front-end clamp.

Use Value: Low leakage (<10 µA) prevents signal integrity impact on image sensor bias supplies; DO-218AC footprint supports compact layout near connector interface.

Use Scenario: Long-haul CAN/LIN bus modules exposed to repeated load dump pulses during fleet vehicle operation.

IC Role / Device Role / Timing Role: Standalone TVS on main 12 V input, selected for high-temperature endurance and traceable sourcing.

Use Value: 175 °C junction rating ensures uninterrupted operation during extended parking in desert climates; HE3 suffix guarantees whisker-resistant plating for long-term solder joint integrity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SM6S11AHM3Same VBR, VWM, and package; HM3 suffix indicates halogen-free molding compound and enhanced moisture sensitivity level compliancePreferred for new designs targeting RoHS+REACH+halogen-free compliance; not drop-in due to different tape/reel packaging (HM3 vs HE3)Select HM3 for green manufacturing programs; verify reel orientation and sprocket hole alignment in pick-and-place setup
SMAJ11ALower PPPM (400 W vs 4600 W); SMA package (DO-214AC) with higher RθJA; no AEC-Q101 qualificationSuitable only for non-automotive, low-energy industrial applications; lacks load dump capability and high-temp reliabilityUse only in cost-sensitive consumer electronics where ISO7637-2 compliance is not required

Compared with SM6S11ATHE3/I, SM6S11AHM3 offers identical electrical and thermal performance with updated environmental compliance, while SMAJ11A provides basic TVS functionality at lower surge capacity and without automotive qualification - making SM6S11ATHE3/I the sole choice for AEC-Q101–mandated 12 V load dump protection.

Availability

SM6S11ATHE3/I is available at Aetrix Electronics and suitable for automotive electronics, engine control units, and telematics systems requiring stable component supply under extended temperature and high-surge conditions.

Supply support for SM6S11ATHE3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on automotive, industrial, and computing applications.

The SM6SxxAT family was engineered specifically for high-reliability automotive load dump protection, combining high-temperature junction capability (175 °C), ISO7637-2 compliance, and DO-218AC thermal efficiency to replace older axial-leaded and lower-power SMD TVS solutions.

FAQ

What is the maximum clamping voltage of the SM6S11ATHE3/I at its rated peak pulse current?

The SM6S11ATHE3/I has a maximum clamping voltage (VC) of 18.2 V when subjected to its rated peak pulse current of 253 A (10/1000 µs waveform). This value is measured per test condition in the Vishay datasheet (Document Number 87735, page 2) and defines the upper voltage limit imposed on protected circuitry during worst-case surge events. Maintaining VC below 20 V ensures compatibility with common 20 V-rated automotive power management ICs.

Is the SM6S11ATHE3/I suitable for new automotive designs despite the "Not For New Designs" note in the datasheet?

No - the "Not For New Designs" notice applies to the entire SM6SxxAT series, including SM6S11ATHE3/I. Vishay recommends SM6S11AHM3 as the designated replacement, which shares identical electrical specifications but adds halogen-free construction and updated MSL compliance. While SM6S11ATHE3/I remains available for legacy program support, new designs should use SM6S11AHM3 to ensure long-term supply and regulatory alignment.

How is the anode-heatsink configuration of the SM6S11ATHE3/I implemented in PCB layout?

The SM6S11ATHE3/I uses a DO-218AC package where Lead 1 and the metal heatsink tab are both electrically connected to the anode. In PCB layout, the heatsink pad must be soldered to a large copper pour tied to system ground or chassis potential - serving as both thermal path and low-inductance return. Lead 1 is routed separately to the positive rail; improper connection (e.g., floating heatsink) compromises surge current handling and thermal performance of the SM6S11ATHE3/I.

Does the SM6S11ATHE3/I meet ISO7637-2 Pulse 5a and 5b requirements for 12 V systems?

Yes - the SM6S11ATHE3/I is explicitly characterized for ISO7637-2 compliance in the datasheet (page 1, Features section), with load dump power curves shown in Figure 2. At TC = 25 °C, it sustains 4600 W for 10 ms exponential waveform - exceeding the 3500 W minimum required for Pulse 5a (alternator load dump) and supporting Pulse 5b (with external impedance) in typical 12 V automotive implementations using appropriate PCB copper area.

What is the leakage current specification of the SM6S11ATHE3/I at elevated temperature?

At VWM = 11.0 V and TJ = 175 °C, the SM6S11ATHE3/I exhibits a maximum reverse leakage current (ID) of 10 µA, as specified in the Electrical Characteristics table (page 2 of Document 87735). This elevated-temperature leakage value confirms stable blocking behavior in under-hood environments and is critical for low-quiescent-current automotive modules where cumulative leakage across multiple TVS devices could impact sleep-mode current budgets.

SM6S11ATHE3/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-218AC
Series:
PAR®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
11V
Voltage - Breakdown (Min):
12.2V
Voltage - Clamping (Max) @ Ipp:
18.2V
Current - Peak Pulse (10/1000µs):
253A
Power - Peak Pulse:
4600W (4.6kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-218AC

SM6S11ATHE3/I FAQ

1.How can I place an order for SM6S11ATHE3/I through Aetrix?

Please submit a Request for Quotation (RFQ) for SM6S11ATHE3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SM6S11ATHE3/I reliable?

The price and inventory of SM6S11ATHE3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM6S11ATHE3/I is usually 5 days.

3.What payment methods are accepted for SM6S11ATHE3/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM6S11ATHE3/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SM6S11ATHE3/I?

SM6S11ATHE3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SM6S11ATHE3/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SM6S11ATHE3/I?

For technical support, including SM6S11ATHE3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM6S11ATHE3/I requirements.

6.How does Aetrix verify that SM6S11ATHE3/I is sourced from the original manufacturer or authorized distributors?

All SM6S11ATHE3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM6S11ATHE3/I meets industry standards.

7.What is the process for return or replacement of SM6S11ATHE3/I?

All SM6S11ATHE3/I units undergo pre-shipment inspection (PSI). If there is an issue with SM6S11ATHE3/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SM6S11ATHE3/I part is unused and in its original packaging.

Return procedure for SM6S11ATHE3/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SM6S11ATHE3/I Tags

  • SM6S11ATHE3/I
  • SM6S11ATHE3/I PDF
  • SM6S11ATHE3/I Datasheet
  • SM6S11ATHE3/I Specifications
  • SM6S11ATHE3/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SM6S11ATHE3/I
  • Buy SM6S11ATHE3/I
  • SM6S11ATHE3/I Price
  • SM6S11ATHE3/I Distributor
  • SM6S11ATHE3/I Supplier
  • SM6S11ATHE3/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER