Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SM6T12AHE3/5B

Part No.:
SM6T12AHE3/5B
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSM6T12AHE3/5B.pdf
Description:
TVS DIODE 10.2VWM 16.7VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,902

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SM6T12AHE3/5B from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, rated for 12 V breakdown voltage (VBR = 11.4–12.6 V at 1.0 mA), 10.2 V stand-off voltage (VWM), and 16.7 V clamping voltage (VC) at 36.0 A peak pulse current (IPPM). It delivers 600 W peak pulse power with 10/1000 μs waveform and is AEC-Q101 qualified for automotive electronics protection.

For engineers reviewing the SM6T12AHE3/5B datasheet, SM6T12AHE3/5B pinout, SM6T12AHE3/5B application, or SM6T12AHE3/5B equivalent, key selection considerations include clamping performance under 36 A surge, unidirectional polarity with cathode band marking, RoHS-compliant AEC-Q101 qualification, and SMB package compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.

Technical Context

This TVS diode operates as a fast-acting overvoltage clamp in series with sensitive downstream circuitry, leveraging an avalanche breakdown mechanism to limit transient voltages before they damage ICs or MOSFETs. Its low inductance and glass-passivated junction enable sub-nanosecond response to ESD and switching transients.

The device is characterized under standardized 10/1000 μs and 8/20 μs waveforms, with thermal resistance RθJA = 100 °C/W and RθJL = 20 °C/W, supporting operation from −65 °C to +150 °C junction temperature. It meets MSL Level 1 per J-STD-020 and is rated for 100 A non-repetitive forward surge current (IFSM).

Key Specifications

ParameterValue and Actual Design Meaning
VBR (min/max)11.4 V / 12.6 V at 1.0 mA - defines precise avalanche onset threshold for reliable clamping initiation
VWM10.2 V - maximum continuous reverse voltage before leakage exceeds 5.0 μA, ensuring no false triggering
VC @ IPPM16.7 V at 36.0 A (10/1000 μs) - limits transient voltage seen by protected IC to safe level
PPPM600 W - peak surge energy absorption capability under standard lightning/inductive-switching stress
IFSM100 A - withstands single half-sine 10 ms surge without degradation, critical for motor drive inputs
TJ max.+150 °C - enables use in under-hood automotive environments and high-power industrial enclosures

Pinout & Package

Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode indicated by band marking on unidirectional devices.

Pin/TerminalCircuit RoleDesign Meaning
AnodeCurrent entry terminal during forward conduction or transient clampingConnected to ground or low-impedance return path; forms clamping loop with cathode
Cathode (banded end)Current exit terminal; defines polarity for unidirectional operationConnected to protected line (e.g., CAN_H, USB_VBUS); clamps to ground when overvoltage occurs

Key Features

FeatureDesign Value
600 W peak pulse power (10/1000 μs)Enables robust protection against ISO 7637-2 Pulse 1/2a/5a and IEC 61000-4-5 surges in automotive ECUs
AEC-Q101 qualifiedValidated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per AEC specification
Glass passivated chip junctionEnsures stable VBR and low leakage over lifetime, even under humidity and thermal stress
Low inductance SMB packageMinimizes voltage overshoot during fast transients (<1 ns rise time), improving clamping fidelity

Applications

Automotive Power Line ProtectionIndustrial Sensor Interface Protection

Use Scenario: Protecting 12 V battery-fed control modules (e.g., body control units) from load dump and alternator transients.

IC Role / Device Role: Unidirectional TVS placed between power rail and chassis ground to clamp positive-going surges.

Use Value: Limits peak voltage to ≤16.7 V during 36 A transients, preventing damage to 16 V-rated DC-DC converters and microcontrollers.

Use Scenario: Safeguarding analog sensor outputs (e.g., pressure, temperature) connected to PLC input cards in factory automation.

IC Role / Device Role: Point-of-entry TVS on signal lines to absorb ESD and inductive kickback from solenoid drivers.

Use Value: Clamps 8/20 μs surges to ≤21.7 V while maintaining <5 μA leakage at 10.2 V, preserving signal integrity and ADC accuracy.

Consumer USB Port ESD ProtectionTelecom Line Card Surge Suppression

Use Scenario: Secondary-level ESD protection on VBUS and D+/D− lines of USB 2.0 host ports in set-top boxes and smart displays.

IC Role / Device Role: Standoff-clamp TVS with low capacitance (typ. 200 pF at 0 V) placed upstream of USB transceivers.

Use Value: Withstands ±15 kV contact discharge per IEC 61000-4-2 while adding minimal signal distortion due to SMB footprint and low parasitic inductance.

Use Scenario: Primary surge protection on Ethernet PHY power rails (e.g., 3.3 V bias supply) in VoIP gateways and DSLAM line cards.

IC Role / Device Role: Fast-response unidirectional clamp on isolated DC supplies feeding magnetics and PHY ICs.

Use Value: Absorbs 600 W lightning-induced surges without latch-up, enabling compliance with GR-1089-CORE Level 3 (200 V/100 A 10/1000 μs) requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMAJ12A-E3/5BSame SMB package, but lower 400 W PPPM; VC = 19.9 V @ 20.1 A; not AEC-Q101 qualifiedSuitable for commercial-grade consumer electronics where automotive qualification is unnecessarySelect when cost sensitivity outweighs automotive reliability requirements and surge energy is ≤400 W
1.5SMC12AHigher 1500 W PPPM, larger SMC (DO-214AB) package; VC = 19.2 V @ 78.1 A; AEC-Q101 available only in HE3 variantUsed where higher surge margin is needed and PCB space allows larger footprintChoose when system-level surge testing requires >600 W headroom and layout accommodates SMC pad dimensions

Compared with SMAJ12A-E3/5B and 1.5SMC12A, SM6T12AHE3/5B uniquely balances AEC-Q101 qualification, 600 W capability, and SMB footprint-making it optimal for space-constrained automotive modules requiring validated reliability without board redesign.

Availability

SM6T12AHE3/5B is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor interfaces, consumer USB power delivery systems, and telecom line card designs requiring stable component supply across production lifecycles.

Supply support for SM6T12AHE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability and application-specific performance.

The SM6T Series is engineered for high-energy transient suppression in harsh environments, targeting automotive, industrial, and telecom applications where AEC-Q101 qualification, consistent clamping, and automated assembly compatibility are mandatory.

FAQ

What is the clamping voltage of SM6T12AHE3/5B at its rated peak pulse current?

The SM6T12AHE3/5B has a maximum clamping voltage (VC) of 16.7 V when subjected to its rated peak pulse current of 36.0 A under the standard 10/1000 μs waveform. This value is measured per Figure 1 in the Vishay datasheet 88385 and ensures downstream components see limited overvoltage during surge events. The SM6T12AHE3/5B maintains this clamping performance across its qualified operating temperature range.

Is SM6T12AHE3/5B suitable for automotive applications?

Yes, SM6T12AHE3/5B is AEC-Q101 qualified, as confirmed by its "HE3" suffix and documentation in Vishay's SM6T series datasheet. It undergoes rigorous stress testing-including temperature cycling, high-temperature reverse bias, and ESD-to meet automotive reliability standards. The SM6T12AHE3/5B is explicitly recommended for engine control units, body electronics, and infotainment systems exposed to load dump and ISO 7637-2 transients.

What does the "HE3" and "/5B" suffix mean in SM6T12AHE3/5B?

The "HE3" suffix denotes RoHS-compliant construction with AEC-Q101 qualification, while "/5B" specifies packaging in 13-inch diameter plastic tape and reel containing 3200 units. This configuration supports high-volume SMT assembly. The SM6T12AHE3/5B ordering code ensures traceability, whisker-tested matte tin plating, and compliance with JESD 201 Class 2 requirements.

How does SM6T12AHE3/5B differ from bidirectional variants like SM6T12CA?

SM6T12AHE3/5B is unidirectional, with polarity marked by a cathode band and intended for DC line protection where only positive transients occur. In contrast, SM6T12CA is bidirectional, offering symmetrical clamping for AC-coupled or differential lines (e.g., RS-485). The SM6T12AHE3/5B has lower leakage at VWM (5.0 μA vs. 10 μA for SM6T12CA) and is optimized for 12 V rail protection in automotive power domains.

What is the thermal resistance of SM6T12AHE3/5B, and how does it affect PCB layout?

The SM6T12AHE3/5B has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. To maintain safe junction temperatures under sustained power dissipation, designers must adhere to this pad layout. Reducing pad area increases RθJA, risking thermal runaway during repetitive surges. The SM6T12AHE3/5B's RθJL of 20 °C/W further emphasizes the need for solid thermal connection to PCB copper planes.

SM6T12AHE3/5B Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
SM6T, TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
10.2V
Voltage - Breakdown (Min):
11.4V
Voltage - Clamping (Max) @ Ipp:
16.7V
Current - Peak Pulse (10/1000µs):
36A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBJ)

SM6T12AHE3/5B FAQ

1.How can I place an order for SM6T12AHE3/5B through Aetrix?

Please submit a Request for Quotation (RFQ) for SM6T12AHE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SM6T12AHE3/5B reliable?

The price and inventory of SM6T12AHE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM6T12AHE3/5B is usually 5 days.

3.What payment methods are accepted for SM6T12AHE3/5B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM6T12AHE3/5B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SM6T12AHE3/5B?

SM6T12AHE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SM6T12AHE3/5B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SM6T12AHE3/5B?

For technical support, including SM6T12AHE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM6T12AHE3/5B requirements.

6.How does Aetrix verify that SM6T12AHE3/5B is sourced from the original manufacturer or authorized distributors?

All SM6T12AHE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM6T12AHE3/5B meets industry standards.

7.What is the process for return or replacement of SM6T12AHE3/5B?

All SM6T12AHE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SM6T12AHE3/5B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SM6T12AHE3/5B part is unused and in its original packaging.

Return procedure for SM6T12AHE3/5B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SM6T12AHE3/5B Tags

  • SM6T12AHE3/5B
  • SM6T12AHE3/5B PDF
  • SM6T12AHE3/5B Datasheet
  • SM6T12AHE3/5B Specifications
  • SM6T12AHE3/5B Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SM6T12AHE3/5B
  • Buy SM6T12AHE3/5B
  • SM6T12AHE3/5B Price
  • SM6T12AHE3/5B Distributor
  • SM6T12AHE3/5B Supplier
  • SM6T12AHE3/5B Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER