My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SM6T6V8A-E3/5B
;;2.jpg)
- Part No.:
- SM6T6V8A-E3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SM6T6V8A-E3/5B.pdf
- Description:
- TVS DIODE 5.8VWM 10.5VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:4,614
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SM6T6V8A-E3/5B from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 6.45 V minimum breakdown voltage (VBR), 5.80 V stand-off voltage (VWM), 10.5 V maximum clamping voltage (VC) at 57 A peak pulse current, and 600 W peak pulse power rating with 10/1000 μs waveform - used to protect MOSFETs, ICs, and sensor interfaces in automotive and industrial systems.
For engineers reviewing the SM6T6V8A-E3/5B datasheet, SM6T6V8A-E3/5B pinout, SM6T6V8A-E3/5B application, or SM6T6V8A-E3/5B equivalent, key selection criteria include unidirectional polarity, low clamping voltage under 10.5 V, RoHS-compliant matte tin plating, AEC-Q101 qualification eligibility via HE3 suffix variants, and compatibility with automated SMT placement on standard PCB pad layouts.
Technical Context
This TVS diode operates as a unidirectional clamping device with cathode-band polarity marking, leveraging a glass-passivated silicon junction for stable avalanche behavior. Its 100 °C/W junction-to-ambient thermal resistance and 150 °C maximum junction temperature support operation in thermally constrained environments without forced cooling.
The device delivers consistent clamping performance across repetitive transients when mounted on 5.0 mm × 5.0 mm copper pads per terminal, and meets J-STD-020 MSL Level 1 with 260 °C lead-free reflow peak, ensuring robust manufacturability in high-volume surface-mount assembly.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min) | 6.45 V - ensures reliable avalanche conduction onset above normal operating voltage of 5.80 V circuits |
| VWM | 5.80 V - maximum continuous reverse voltage before leakage exceeds 1000 μA |
| VC @ IPPM | 10.5 V at 57 A - limits transient voltage seen by protected downstream components |
| PPPM | 600 W - handles high-energy surges such as ISO 7637-2 Pulse 1/2a/5a in automotive ECUs |
| IFSM | 100 A - withstands single half-sine surge up to 10 ms, supporting inductive load switching |
| TJ max | +150 °C - enables use in under-hood automotive modules and industrial power supplies |
| RθJA | 100 °C/W - defines thermal derating slope for ambient temperatures above 25 °C |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode indicated by band marking on body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point during forward conduction | Connected to ground or lower-potential rail in unidirectional clamp configuration |
| Cathode | Current exit point during reverse-biased clamping | Connected to protected line (e.g., 5 V supply rail or CAN signal) to shunt surge to ground |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 μs) | Enables protection against high-energy transients like load dump and inductive kick in 12 V automotive systems |
| Glass passivated junction | Provides stable, repeatable breakdown characteristics and long-term reliability under repeated surge stress |
| Low clamping voltage (10.5 V) | Minimizes overvoltage stress on 5 V logic ICs and microcontrollers during ESD or surge events |
| MSL Level 1, 260 °C peak reflow | Supports single-pass lead-free reflow without moisture-related failure or delamination |
| AEC-Q101 qualification path | Allows direct use in automotive applications when ordered with HE3/HM3 suffix variants |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 5 V supply rails in engine control units (ECUs) and body control modules from ISO 7637-2 load dump and inductive switching transients. IC Role / Device Role / Timing Role: Unidirectional TVS clamping device placed between VIN and GND, triggered within nanoseconds upon overvoltage detection. Use Value: Limits rail voltage to ≤10.5 V during 57 A surge, preventing latch-up or permanent damage to downstream 5 V regulators and MCU power domains. | Use Scenario: Safeguarding analog output lines (e.g., 4–20 mA or 0–10 V) of pressure/temperature sensors in factory automation PLC I/O modules. IC Role / Device Role / Timing Role: Standby-mode transient suppressor connected across sensor output and reference, activated only during fault conditions. Use Value: Maintains signal integrity by clamping fast-rising EFT bursts (IEC 61000-4-4) while adding <1 pF parasitic capacitance to preserve bandwidth. |
| Consumer Device USB Port Protection | Telecom Line Card Surge Suppression |
Use Scenario: Secondary-level protection on VBUS line of USB 2.0 ports in set-top boxes and smart displays exposed to user-handling ESD. IC Role / Device Role / Timing Role: Fast-response unidirectional clamp placed upstream of USB power switch ICs and polyfuses. Use Value: Clamps ±8 kV contact ESD (IEC 61000-4-2) to <10.5 V within <1 ns, avoiding false triggering of overcurrent protection. | Use Scenario: Front-end surge suppression on DC bias feed lines of POTS line cards handling ringing voltage and lightning-induced surges. IC Role / Device Role / Timing Role: Primary transient absorber on -48 V telecom supply, coordinated with gas discharge tubes (GDTs) in hybrid protection schemes. Use Value: Absorbs 600 W energy from 10/1000 μs surges without degradation, maintaining holdover voltage below -55 V to prevent GDT follow-on current. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ6.0A | Lower PPPM (400 W), higher VC (10.5 V same, but at lower IPPM = 38.2 A), SMA package (larger RθJA = 140 °C/W) | Less suitable for automotive load dump where 600 W margin is required; acceptable for consumer-grade ESD-only protection | Select SM6T6V8A-E3/5B when 600 W capability, SMB footprint, or AEC-Q101 qualification path is needed |
| 1.5SMC6.8A | Same VBR/VC, but SMC package (DO-214AB), higher IFSM (200 A), PPPM = 1500 W, larger footprint and thermal mass | Better for high-reliability industrial power supplies needing >100 A surge margin, but incompatible with dense SMB layouts | Choose SM6T6V8A-E3/5B for space-constrained designs requiring 600 W in minimal area and standard SMT process compatibility |
Compared with SMAJ6.0A and 1.5SMC6.8A, SM6T6V8A-E3/5B delivers optimal balance of 600 W surge capacity, 10.5 V clamping, SMB footprint, and RoHS-compliant manufacturability - making it preferred for automotive and industrial SMT designs where board area and thermal profile are constrained.
Availability
SM6T6V8A-E3/5B is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor interfaces, and consumer USB power rail protection requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for SM6T6V8A-E3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, precision, and automotive-grade qualification.
The SM6T Series is engineered specifically for robust transient suppression in harsh environments - targeting automotive, industrial, and telecom applications where high pulse power, low clamping, and AEC-Q101 readiness are critical design requirements.
FAQ
What is the clamping voltage of SM6T6V8A-E3/5B and how is it measured?
The SM6T6V8A-E3/5B has a maximum clamping voltage (VC) of 10.5 V at 57 A peak pulse current using a 10/1000 μs waveform per Figure 1 in the datasheet. This value is measured across the device terminals during standardized surge testing and represents the upper voltage limit imposed on protected circuitry during transient events - critical for ensuring compatibility with 5 V logic families and preventing overvoltage damage to downstream ICs.
Is SM6T6V8A-E3/5B RoHS-compliant and halogen-free?
Yes, SM6T6V8A-E3/5B is RoHS-compliant per EU Directive 2011/65/EU, with "E3" suffix indicating commercial-grade RoHS compliance. It is not halogen-free; halogen-free versions carry the "M3" suffix (e.g., SM6T6V8A-M3/5B). The E3 variant uses matte tin-plated leads and meets JESD 201 Class 2 whisker resistance requirements.
Does SM6T6V8A-E3/5B meet AEC-Q101 qualification?
No, SM6T6V8A-E3/5B itself is not AEC-Q101 qualified. However, Vishay offers AEC-Q101-qualified variants under the HE3 and HM3 suffixes (e.g., SM6T6V8AHE3_B/I). These share identical electrical and mechanical specifications but undergo additional automotive stress testing - SM6T6V8A-E3/5B serves as the commercial baseline for those qualified derivatives.
What is the thermal resistance of SM6T6V8A-E3/5B and how does it affect layout?
The SM6T6V8A-E3/5B has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 5.0 mm × 5.0 mm copper pads per terminal. This value directly impacts PCB thermal design: reducing pad size or omitting thermal vias increases effective RθJA, accelerating thermal derating above 25 °C ambient - proper pad layout is essential to maintain 600 W pulse capability at elevated temperatures.
How does the unidirectional polarity of SM6T6V8A-E3/5B impact circuit connection?
The unidirectional polarity of SM6T6V8A-E3/5B requires correct orientation: the cathode band must connect to the line being protected (e.g., 5 V rail), and the anode to ground. Reversal prevents clamping during positive transients and risks forward conduction during normal operation - unlike bidirectional types (e.g., SM6T6V8CA), SM6T6V8A-E3/5B cannot suppress negative-going surges on AC-coupled lines.
SM6T6V8A-E3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- SM6T, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 5.8V
- Voltage - Breakdown (Min):
- 6.45V
- Voltage - Clamping (Max) @ Ipp:
- 10.5V
- Current - Peak Pulse (10/1000µs):
- 57A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SM6T6V8A-E3/5B FAQ
1.How can I place an order for SM6T6V8A-E3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SM6T6V8A-E3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM6T6V8A-E3/5B reliable?
The price and inventory of SM6T6V8A-E3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM6T6V8A-E3/5B is usually 5 days.
3.What payment methods are accepted for SM6T6V8A-E3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM6T6V8A-E3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM6T6V8A-E3/5B?
SM6T6V8A-E3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM6T6V8A-E3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM6T6V8A-E3/5B?
For technical support, including SM6T6V8A-E3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM6T6V8A-E3/5B requirements.
6.How does Aetrix verify that SM6T6V8A-E3/5B is sourced from the original manufacturer or authorized distributors?
All SM6T6V8A-E3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM6T6V8A-E3/5B meets industry standards.
7.What is the process for return or replacement of SM6T6V8A-E3/5B?
All SM6T6V8A-E3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SM6T6V8A-E3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM6T6V8A-E3/5B part is unused and in its original packaging.
Return procedure for SM6T6V8A-E3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM6T6V8A-E3/5B Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
