Microchip Technology SMAJ11AE3/TR13
- Part No.:
- SMAJ11AE3/TR13
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
SMAJ11AE3/TR13.pdf
- Description:
- TVS DIODE 11VWM 18.2VC DO214AC
- Quantity:
- Payment:

- Shipping:

Inventory:3,171
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Product details
Overview
SMAJ11AE3/TR13 from Microsemi is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in DO-214AC (SMA) package, rated for 500 W peak pulse power at 10/1000 µs, with 11 V working standoff voltage (VWM), 12.2 V minimum breakdown voltage (VBR), and 18.2 V maximum clamping voltage (VC) at 27.4 A peak pulse current - deployed for ESD/EFT protection on DC power rails and I/O lines of industrial controllers and telecom interfaces.
For engineers reviewing the SMAJ11AE3/TR13 datasheet, SMAJ11AE3/TR13 pinout, SMAJ11AE3/TR13 application, or SMAJ11AE3/TR13 equivalent, this page delivers verified electrical parameters, IEC61000-4-2/4-4/4-5 compliance details, thermal derating behavior, RoHS-compliant plating specification, and direct alternative part comparisons - all validated against Microsemi MSC0270A Rev L.
Technical Context
This unidirectional TVS operates as a fast-acting shunt clamp: under normal bias it draws ≤1 µA standby current at 11 V, but triggers at ≥12.2 V to limit transient overvoltage to ≤18.2 V within <100 ps. Its junction-to-lead thermal resistance is 15 °C/W, enabling sustained 5 W dissipation at lead temperature of 75 °C when mounted per recommended footprint.
The device meets IEC61000-4-2 Level 4 (±15 kV contact), IEC61000-4-4 (40 A, 5/50 ns), and IEC61000-4-5 secondary lightning surge (42 Ω source, Class 4 up to 12 V VWM). Its RoHS-compliant matte-tin plating and void-free epoxy case comply with UL94V-0 and IPC/JEDEC J-STD-020B Level 1 moisture sensitivity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 11 V - Maximum continuous reverse operating voltage before leakage exceeds 1 µA; sets upper limit for protected line voltage. |
| VBR min @ IBR | 12.2 V @ 1 mA - Minimum voltage at which device enters avalanche conduction; ensures reliable triggering above nominal rail. |
| VC @ IPP | 18.2 V @ 27.4 A - Clamped voltage during 10/1000 µs surge; defines worst-case overvoltage seen by downstream ICs. |
| PPP | 500 W - Peak pulse power handling capability; determines survivability against standardized lightning-induced surges. |
| tclamp | <100 ps - Theoretical response time from 0 V to VBR; enables effective suppression of ESD events per IEC61000-4-2. |
| TJ range | –65 °C to +150 °C - Operating and storage temperature envelope; supports deployment in automotive engine bays and industrial enclosures. |
| Package | DO-214AC (SMA) - Surface-mount outline with C-bend leads; compatible with standard reflow profiles and FR4 PCB footprints. |
Pinout & Package
DO-214AC (SMA) package with two terminals: cathode marked by band on body; anode unmarked. Void-free thermosetting epoxy case (UL94V-0), matte-tin-plated C-bend leads solderable per MIL-STD-750 Method 2026. Weight: 0.064 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side connection to protected line | Connected to signal/power line requiring transient clamping; referenced to system ground via cathode path. |
| Cathode | Ground reference terminal | Marked by band; ties to chassis or PCB ground plane to complete low-impedance surge current path to earth. |
Key Features
| Feature | Design Value |
|---|---|
| 500 W peak pulse rating | Enables robust protection against IEC61000-4-5 secondary lightning surges (42 Ω source, Class 4) without derating at 25 °C. |
| RoHS-compliant "e3" suffix | Matte-tin plating meets EU RoHS Directive 2011/65/EU and JEDEC J-STD-020B Level 1 moisture sensitivity without dry pack. |
| Fast clamping response | <100 ps theoretical turn-on time ensures suppression of sub-nanosecond ESD transients per IEC61000-4-2 Level 4. |
| Steady-state power rating | 5 W at TL = 75 °C allows use in thermally constrained environments with minimal heatsinking. |
| Tape-and-reel packaging | TR13 suffix denotes 2500-unit 13-inch reel per EIA-481-1-A - optimized for automated SMT placement in high-volume production. |
Applications
| Industrial PLC I/O Protection | Telecom Power Rail Clamp |
|---|---|
Use Scenario: 24 V DC input/output channels in programmable logic controllers exposed to inductive switching noise and field wiring surges. IC Role / Device Role / Timing Role: Unidirectional shunt TVS placed between channel and ground to clamp transients before reaching isolation amplifiers or digital I/O drivers. Use Value: Limits voltage to ≤18.2 V during 27.4 A surges, preventing latch-up or gate oxide damage in downstream 3.3 V/5 V interface ICs. |
Use Scenario: -48 V telecom power distribution boards where hot-swap events and load-dump transients threaten PMICs and supervisory circuits. IC Role / Device Role / Timing Role: Standoff-rated TVS on primary DC feed line, triggered only during overvoltage events exceeding 11 V. Use Value: Withstands 500 W pulses while maintaining ≤1 µA leakage at nominal -48 V (reverse-biased), ensuring no impact on system efficiency. |
| Automotive Body Control Module | Medical Sensor Interface |
Use Scenario: LIN bus or 12 V sensor supply lines in body control modules subject to ISO 7637-2 pulse 1/2a/3a transients. IC Role / Device Role / Timing Role: Primary front-end protection element upstream of CAN/LIN transceivers and microcontroller GPIOs. Use Value: Clamps ISO 7637-2 Pulse 1 (−150 V, 50 ms) to safe levels using its 15 °C/W junction-to-lead thermal path and 150 °C max TJ. |
Use Scenario: Analog front-end inputs of patient monitoring devices connected to external electrodes or probes susceptible to ESD discharge. IC Role / Device Role / Timing Role: First-line defense against ±15 kV contact ESD per IEC61000-4-2, placed directly at connector entry point. Use Value: Sub-100 ps response ensures clamping occurs before ESD pulse couples into low-noise amplifier stages, preserving signal integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ11AHE3/TR13 | Same electrical specs, but with high-reliability screening (H-grade): 100% temperature cycling (−55 °C to +125 °C, 10×), surge testing (3×), and HTRB validation. | Required for avionics, downhole oil/gas, or military platforms where extended environmental stress validation is mandated. | Select SMAJ11AHE3/TR13 only if qualification to MIL-PRF-19500 JANTX or internal MA-screening requirements apply. |
| SMBJ11A-E3/52 | Same VWM/VBR/VC, but SMB package (DO-214AA); 600 W PPP rating and higher thermal resistance (20 °C/W junction-to-lead). | Better suited for higher-energy surges where board space permits larger footprint; less optimal for ultra-low-inductance layouts. | Choose SMBJ11A-E3/52 when surge energy exceeds 500 W margin or when existing design uses SMB footprint. |
Compared with SMAJ11AE3/TR13, the SMAJ11AHE3/TR13 adds qualification-level screening for harsh environments without altering clamping behavior, while SMBJ11A-E3/52 trades smaller size for higher power and relaxed thermal performance - making the original SMAJ11AE3/TR13 optimal for cost-sensitive, space-constrained industrial SMT designs requiring certified RoHS compliance and IEC61000-4-x immunity.
Availability
SMAJ11AE3/TR13 is available at Aetrix Electronics and suitable for industrial PLC I/O protection, telecom power rail clamping, automotive body control modules, and medical sensor interface designs requiring stable component supply across multi-year production cycles.
Supply support for SMAJ11AE3/TR13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, industrial, and communications markets.
The SMAJ series was designed specifically for surface-mount transient voltage suppression in space-constrained, high-surge environments - delivering 500 W pulse capability in the compact DO-214AC package with industry-standard RoHS compliance and thermal performance.
FAQ
What is the clamping voltage of SMAJ11AE3/TR13 at its rated peak pulse current?
The SMAJ11AE3/TR13 has a maximum clamping voltage (VC) of 18.2 V at 27.4 A peak pulse current (IPP) under the standard 10/1000 µs waveform. This value is measured per Figure 2 in Microsemi's MSC0270A Rev L datasheet and defines the upper voltage limit imposed on protected circuitry during surge events - critical for ensuring downstream ICs remain within absolute maximum ratings.
Is SMAJ11AE3/TR13 unidirectional or bidirectional, and how is polarity identified?
SMAJ11AE3/TR13 is a unidirectional TVS diode, indicated by the absence of "C" or "CA" in its part number suffix. Polarity is marked by a cathode band on the body; the banded end connects to system ground, while the unmarked end connects to the protected line. Bidirectional variants (e.g., SMAJ11CAE3/TR13) would have symmetric clamping in both directions and no polarity marking.
Does SMAJ11AE3/TR13 meet IEC61000-4-5 for secondary lightning surge protection?
Yes, SMAJ11AE3/TR13 is rated for secondary lightning protection per IEC61000-4-5 with 42 Ω source impedance at Class 4 level (up to 12 V VWM), and with 12 Ω source impedance at Class 2 level (up to 16 V VWM). Its 500 W peak pulse power rating and 18.2 V clamping voltage ensure compliance when applied per Microsemi's recommended layout and grounding practices.
What is the thermal resistance and steady-state power rating of SMAJ11AE3/TR13?
SMAJ11AE3/TR13 has a junction-to-lead thermal resistance of 15 °C/W and a steady-state power dissipation rating of 5 W at lead temperature (TL) = 75 °C. When mounted on FR4 with 1 oz copper and Microsemi's recommended footprint, it dissipates 1.56 W at ambient temperature (TA) = 25 °C - enabling reliable operation in thermally dense industrial PCB layouts without forced air cooling.
What does the "TR13" suffix indicate in SMAJ11AE3/TR13?
The "TR13" suffix in SMAJ11AE3/TR13 specifies tape-and-reel packaging: 2500 units per 13-inch reel, compliant with EIA-481-1-A standards. This format is optimized for high-speed pick-and-place assembly in automated SMT lines and ensures consistent feeding, reduced handling damage, and full traceability through Aetrix Electronics' logistics chain.
SMAJ11AE3/TR13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- DO-214AC, SMA
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 11V
- Voltage - Breakdown (Min):
- 12.2V
- Voltage - Clamping (Max) @ Ipp:
- 18.2V
- Current - Peak Pulse (10/1000µs):
- 27.4A
- Power - Peak Pulse:
- 500W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
SMAJ11AE3/TR13 FAQ
1.How can I place an order for SMAJ11AE3/TR13 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMAJ11AE3/TR13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMAJ11AE3/TR13 reliable?
The price and inventory of SMAJ11AE3/TR13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMAJ11AE3/TR13 is usually 5 days.
3.What payment methods are accepted for SMAJ11AE3/TR13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMAJ11AE3/TR13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMAJ11AE3/TR13?
SMAJ11AE3/TR13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMAJ11AE3/TR13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMAJ11AE3/TR13?
For technical support, including SMAJ11AE3/TR13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMAJ11AE3/TR13 requirements.
6.How does Aetrix verify that SMAJ11AE3/TR13 is sourced from the original manufacturer or authorized distributors?
All SMAJ11AE3/TR13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMAJ11AE3/TR13 meets industry standards.
7.What is the process for return or replacement of SMAJ11AE3/TR13?
All SMAJ11AE3/TR13 units undergo pre-shipment inspection (PSI). If there is an issue with SMAJ11AE3/TR13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMAJ11AE3/TR13 part is unused and in its original packaging.
Return procedure for SMAJ11AE3/TR13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMAJ11AE3/TR13 Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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