Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMAJ11AHE3_A/I

Part No.:
SMAJ11AHE3_A/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AC, SMA
Datasheet:
AetrixSMAJ11AHE3_A/I.pdf
Description:
TVS DIODE 11VWM 18.2VC DO214AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,277

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMAJ11AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMA (DO-214AC) package, designed for clamping fast-rising ESD and surge transients on power and signal lines. It features 11 V standoff voltage (VWM), 12.2–13.5 V breakdown voltage (VBR) at 1 mA, 18.2 V maximum clamping voltage (VC) at 22 A peak pulse current, and 400 W peak pulse power rating with 10/1000 μs waveform - used to protect MOSFET gates, microcontroller I/O, and automotive sensor interfaces.

For engineers reviewing the SMAJ11AHE3_A/I datasheet, SMAJ11AHE3_A/I pinout, SMAJ11AHE3_A/I application, or SMAJ11AHE3_A/I equivalent, this AEC-Q101 qualified TVS offers verified surge immunity for 12 V automotive subsystems, industrial PLC inputs, and USB/RS-485 line protection where low-leakage (<1 μA at VWM) and sub-nanosecond response are critical.

Technical Context

This unidirectional TVS operates as a voltage-clamped shunt protector: under normal bias it presents <1 μA reverse leakage at 11 V, but triggers avalanche conduction when transient voltage exceeds 12.2 V, limiting downstream voltage to ≤18.2 V at 22 A surge. Its glass-passivated junction ensures stable VBR tolerance (±5%) and low temperature coefficient (0.080 %/°C).

Mounted on standard 5.0 mm × 5.0 mm copper pads, it delivers 400 W peak pulse power up to 78 V and derates to 300 W above that threshold; thermal resistance is 120 °C/W (junction-to-ambient) and 30 °C/W (junction-to-lead), supporting reliable operation up to +150 °C junction temperature.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 11 V - Maximum continuous reverse operating voltage before leakage exceeds 1 μA; sets safe margin below system rail (e.g., 12 V automotive).
VBR @ IT = 1 mA 12.2–13.5 V - Breakdown onset range; guarantees clamping activation within 1.3 V window for predictable overvoltage response.
VC @ IPPM = 22 A 18.2 V - Clamped voltage during 10/1000 μs surge; limits stress on protected ICs such as CAN transceivers or MCU GPIOs.
PPPM 400 W - Peak pulse power handling with 10/1000 μs waveform; sufficient for ISO 7637-2 Pulse 1/2a/3a and IEC 61000-4-5 Level 3 surges.
IFSM 40 A - Non-repetitive forward surge rating (8.3 ms half-sine); supports robustness against load dump events in automotive applications.
TJ max. +150 °C - Maximum junction temperature; enables use in under-hood automotive modules and industrial enclosures without active cooling.
Package SMA (DO-214AC) - Surface-mount outline with 5.28 mm × 4.50 mm footprint; compatible with automated pick-and-place and reflow soldering per J-STD-020 MSL level 1.

Pinout & Package

Package: SMA (DO-214AC), molded plastic case with matte tin-plated leads; cathode indicated by band on one end; polarity-critical for unidirectional operation.

Pin/Terminal Circuit Role Design Meaning
Anode Low-side connection Connected to ground or return path; completes clamping loop when transient exceeds VBR.
Cathode High-side connection Connected to protected line (e.g., 12 V supply or signal trace); reverse-biased during normal operation.

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing - required for engine control units and ADAS sensors.
400 W peak pulse power (10/1000 μs) Withstands high-energy transients common in 12 V vehicle electrical systems without degradation across >1000 surges.
Glass passivated junction Ensures stable VBR and low leakage over lifetime; eliminates risk of parametric drift due to moisture or contamination.
MSL level 1 (260 °C peak) Compatible with standard lead-free reflow profiles; no floor life limitation or baking required prior to assembly.
Low clamping ratio (VC/VBR ≈ 1.43) Minimizes overvoltage overshoot during clamping - critical for protecting 3.3 V or 5 V logic interfaces downstream of protection.

Applications

Automotive Body Control Module (BCM) Industrial PLC Digital Input

Use Scenario: Protects LIN bus transceiver and power supply inputs from load dump and alternator ripple in BCMs.

IC Role / Device Role / Timing Role: Shunt TVS placed between 12 V rail and chassis ground; clamps transients within 1 ns to prevent latch-up in transceiver ICs.

Use Value: Enables compliance with ISO 16750-2 (load dump up to 35 V) and extends system MTBF by suppressing >99% of repetitive surges.

Use Scenario: Shields 24 V digital input channels from inductive kickback when solenoids or relays de-energize.

IC Role / Device Role / Timing Role: Unidirectional clamp on input side of optocoupler isolation stage; absorbs 400 W pulses without affecting signal integrity.

Use Value: Eliminates need for external RC snubbers and reduces BOM count while maintaining IEC 61000-4-4 Level 4 immunity.

USB 2.0 Data Line Protection Automotive Camera Power Rail

Use Scenario: Safeguards D+/D− lines against ESD events (>8 kV contact) in automotive infotainment USB ports.

IC Role / Device Role / Timing Role: Low-capacitance TVS (CJ < 100 pF at 0 V) placed inline with data traces; responds in <1 ns to divert ESD current.

Use Value: Preserves signal rise/fall times (<10% distortion at 480 Mbps) while meeting IEC 61000-4-2 Level 4 requirements.

Use Scenario: Guards 12 V power feed to rear-view camera modules exposed to ignition noise and jump-start surges.

IC Role / Device Role / Timing Role: Primary overvoltage clamp upstream of DC/DC converter; triggered only during >12.2 V transients to avoid false trips.

Use Value: Prevents camera blackouts and resets during cranking and battery recovery, improving ASIL-B functional safety compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ11A-E3/61 Same electrical specs and SMA package, but commercial-grade (non-AEC-Q101) and RoHS-compliant without halogen-free certification. Approved for consumer electronics and non-automotive industrial use; not qualified for under-hood automotive deployment. Select when cost sensitivity outweighs automotive qualification requirements and ambient temperature stays below +125 °C.
SMAJ11AHM3_A/I Identical AEC-Q101 qualification and performance, but halogen-free molding compound and matte tin plating compliant with JESD201 Class 2 whisker resistance. Required for automotive OEMs mandating halogen-free materials and enhanced long-term intermetallic stability in high-vibration environments. Choose for Tier 1 automotive programs requiring full material compliance documentation and extended reliability validation.

Compared with SMAJ11AHE3_A/I, the SMAJ11A-E3/61 lacks automotive qualification and thermal robustness for under-hood use, while SMAJ11AHM3_A/I adds halogen-free compliance at identical clamping performance - making SMAJ11AHE3_A/I the optimal balance of AEC-Q101 assurance and broad industrial applicability.

Availability

SMAJ11AHE3_A/I is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC input protection, and USB interface hardening requiring stable component supply and full AEC-Q101 traceability.

Supply support for SMAJ11AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.

The SMAJ series was developed specifically for robust transient suppression in harsh environments - emphasizing AEC-Q101 qualification, tight VBR tolerance, and repeatable clamping performance across temperature and lifetime.

FAQ

What is the maximum clamping voltage of SMAJ11AHE3_A/I at its rated peak pulse current?

The SMAJ11AHE3_A/I has a maximum clamping voltage (VC) of 18.2 V at 22 A peak pulse current (IPPM) with a 10/1000 μs waveform. This value is guaranteed per Vishay's datasheet revision 09-Jan-2024 and defines the upper voltage limit imposed on protected circuitry during surge events. The clamping performance remains stable across -55 °C to +150 °C operating junction temperature.

Is SMAJ11AHE3_A/I suitable for bidirectional signal line protection?

No - SMAJ11AHE3_A/I is a unidirectional TVS diode, intended for DC-biased lines like power rails or single-ended signals referenced to ground. For bidirectional protection (e.g., RS-485, CAN, or AC-coupled data lines), the bidirectional variant SMAJ11CA must be used. Using SMAJ11AHE3_A/I on bidirectional paths risks forward conduction and improper clamping behavior.

Does SMAJ11AHE3_A/I meet automotive qualification standards?

Yes - SMAJ11AHE3_A/I is explicitly AEC-Q101 qualified, as confirmed in Vishay's ordering information table (page 3) and thermal characteristics note. This qualification covers stress tests including HTGB, HTRB, TCT, and ESD, validating its suitability for automotive powertrain, chassis, and body electronics applications per industry requirements.

What is the standoff voltage rating and leakage current of SMAJ11AHE3_A/I at room temperature?

SMAJ11AHE3_A/I has a standoff voltage (VWM) of 11 V and maximum reverse leakage current (ID) of 1.0 μA at 25 °C, measured at rated VWM. This low leakage ensures minimal power loss in always-on circuits and avoids false triggering in high-impedance sensing nodes - critical for battery-powered automotive modules and precision analog front-ends.

Can SMAJ11AHE3_A/I be used in lead-free reflow processes without preconditioning?

Yes - SMAJ11AHE3_A/I meets MSL level 1 per J-STD-020, with a maximum peak reflow temperature of 260 °C. It requires no floor life management or baking prior to assembly, enabling direct placement into standard lead-free reflow ovens using IPC/JEDEC profiles. Matte tin plating ensures solderability per J-STD-002 and JESD22-B102.

SMAJ11AHE3_A/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AC, SMA
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
11V
Voltage - Breakdown (Min):
12.2V
Voltage - Clamping (Max) @ Ipp:
18.2V
Current - Peak Pulse (10/1000µs):
22A
Power - Peak Pulse:
400W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AC (SMA)

SMAJ11AHE3_A/I FAQ

1.How can I place an order for SMAJ11AHE3_A/I through Aetrix?

Please submit a Request for Quotation (RFQ) for SMAJ11AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMAJ11AHE3_A/I reliable?

The price and inventory of SMAJ11AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMAJ11AHE3_A/I is usually 5 days.

3.What payment methods are accepted for SMAJ11AHE3_A/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMAJ11AHE3_A/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMAJ11AHE3_A/I?

SMAJ11AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMAJ11AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMAJ11AHE3_A/I?

For technical support, including SMAJ11AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMAJ11AHE3_A/I requirements.

6.How does Aetrix verify that SMAJ11AHE3_A/I is sourced from the original manufacturer or authorized distributors?

All SMAJ11AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMAJ11AHE3_A/I meets industry standards.

7.What is the process for return or replacement of SMAJ11AHE3_A/I?

All SMAJ11AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMAJ11AHE3_A/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMAJ11AHE3_A/I part is unused and in its original packaging.

Return procedure for SMAJ11AHE3_A/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMAJ11AHE3_A/I Tags

  • SMAJ11AHE3_A/I
  • SMAJ11AHE3_A/I PDF
  • SMAJ11AHE3_A/I Datasheet
  • SMAJ11AHE3_A/I Specifications
  • SMAJ11AHE3_A/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMAJ11AHE3_A/I
  • Buy SMAJ11AHE3_A/I
  • SMAJ11AHE3_A/I Price
  • SMAJ11AHE3_A/I Distributor
  • SMAJ11AHE3_A/I Supplier
  • SMAJ11AHE3_A/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER