Vishay General Semiconductor - Diodes Division SMAJ170AHE3_A/H
- Part No.:
- SMAJ170AHE3_A/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
SMAJ170AHE3_A/H.pdf
- Description:
- TVS DIODE 170VWM 275VC DO214AC
- Quantity:
- Payment:

- Shipping:

Inventory:4,635
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMAJ170AHE3_A/H from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode designed for robust overvoltage protection in DC power rails and signal lines. It features a 170 V stand-off voltage (VWM), 189–209 V breakdown voltage (VBR) at 1 mA, 275 V maximum clamping voltage (VC) at 1.09 A peak pulse current, and 400 W peak pulse power rating with 10/1000 μs waveform - deployed in automotive ECUs, industrial I/O modules, and telecom power supplies.
For engineers reviewing the SMAJ170AHE3_A/H datasheet, SMAJ170AHE3_A/H pinout, SMAJ170AHE3_A/H application, or SMAJ170AHE3_A/H equivalent, key selection criteria include verified clamping performance under 1.09 A surge, AEC-Q101 qualification status, SMA (DO-214AC) package thermal resistance (RθJA = 120 °C/W), and unidirectional polarity marking for correct PCB orientation.
Technical Context
This TVS diode operates as a fast-acting shunt protector: when reverse voltage exceeds VBR (189–209 V), it avalanches to clamp transient energy within nanoseconds. Its glass-passivated junction ensures stable leakage (<1.0 μA at 170 V) and low incremental surge resistance, enabling precise voltage limiting without thermal runaway.
Designed for high-reliability environments, SMAJ170AHE3_A/H meets MSL Level 1 per J-STD-020, supports lead-free reflow up to 260 °C peak, and is AEC-Q101 qualified - confirming suitability for automotive under-hood and chassis applications where junction temperature may reach 150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 170 V - maximum continuous reverse operating voltage before conduction begins |
| VBR min/max | 189 V / 209 V at 1 mA - guaranteed avalanche initiation window for predictable turn-on |
| VC @ IPPM | 275 V at 1.09 A - clamped voltage during full-rated 10/1000 μs transient, limiting downstream stress |
| PPPM | 400 W - peak pulse power handling capability with standard lightning/surge waveform |
| ID @ VWM | ≤1.0 μA - ultra-low leakage preserves system efficiency in high-impedance bias networks |
| TJ max | +150 °C - enables operation in engine bay or industrial enclosures without derating |
| RθJA | 120 °C/W - thermal resistance defines required copper pad area (0.2" × 0.2") for safe 3.3 W dissipation |
Pinout & Package
Package: SMA (DO-214AC) - surface-mount plastic case with matte tin-plated leads, UL 94 V-0 rated molding compound, and cathode band marking for unidirectional polarity identification.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point in forward bias; connected to protected circuit ground or low-side rail | Must be tied to lowest potential node in protected path to ensure proper clamping direction |
| Cathode | Current exit point in forward bias; marked by band; connected to line under protection | Band orientation on PCB must align with positive rail or signal line to be clamped |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, humidity, and mechanical shock |
| Glass-passivated junction | Ensures stable VBR tolerance and long-term leakage stability across 10+ year service life |
| MSL Level 1 rating | Enables standard SMT reflow without moisture sensitivity concerns or baking requirements |
| 400 W peak pulse power | Handles IEC 61000-4-5 Level 4 surges (4 kV line-to-ground) without degradation |
| Low clamping ratio (VC/VBR ≈ 1.38) | Minimizes voltage overshoot during transients, protecting 200 V-rated MOSFETs and gate drivers |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Protection |
|---|---|
Use Scenario: 12 V/24 V battery-fed control modules exposed to load dump (ISO 7637-2 Pulse 5a) and alternator ripple. IC Role / Device Role / Timing Role: Shunt TVS placed between power input and ground to clamp spikes up to 120 V within <1 ns. Use Value: Prevents latch-up or gate oxide damage in MCU power management ICs by limiting transient voltage to ≤275 V at 1.09 A. | Use Scenario: Analog sensor outputs (e.g., pressure, temperature) routed through noisy factory floors with ESD and inductive coupling. IC Role / Device Role / Timing Role: Unidirectional TVS on signal line to ground, absorbing ±8 kV contact ESD (IEC 61000-4-2) and 100 V/m RF-induced transients. Use Value: Maintains sub-μA leakage to avoid offset drift in 24-bit ADC front-ends while clamping to <275 V. |
| Telecom DC Power Input Protection | Motor Drive Gate Driver Supply Protection |
Use Scenario: -48 V telecom rectifier outputs feeding switching regulators, subject to lightning-induced surges on long cable runs. IC Role / Device Role / Timing Role: Primary TVS on input rail, coordinated with upstream MOVs to handle multi-kA events per IEC 61643-21. Use Value: Withstands 400 W pulses without parameter shift, ensuring sustained protection across 10⁵ surge cycles. | Use Scenario: Isolated gate driver supplies (e.g., for 600 V IGBTs) in variable-frequency drives, vulnerable to Miller-induced transients. IC Role / Device Role / Timing Role: Local TVS on 15 V gate supply rail to suppress >100 V ringing caused by high dV/dt switching. Use Value: Clamps within 1 ns to prevent false turn-on of power devices, preserving PWM fidelity and reducing shoot-through risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ170A-E3/61 | Same electrical specs, RoHS-compliant commercial grade (non-AEC-Q101) | Lacks automotive qualification; not approved for under-hood use per OEM requirements | Select when cost-sensitive industrial or consumer designs do not require AEC-Q101 validation |
| SMAJ170AHM3_A/H | Halogen-free, RoHS-compliant, AEC-Q101 qualified - identical clamping and thermal specs | Same automotive use cases; preferred where halogen-free compliance is mandated (e.g., EU automotive Tier 1) | Choose for green manufacturing programs requiring halogen-free materials without sacrificing performance |
Compared with SMAJ170AHE3_A/H, SMAJ170A-E3/61 offers identical protection performance but lacks AEC-Q101 validation for automotive deployment, while SMAJ170AHM3_A/H delivers identical reliability with halogen-free construction - making the HE3 variant optimal for cost-constrained AEC-Q101 applications and HM3 for environmentally regulated vehicle platforms.
Availability
SMAJ170AHE3_A/H is available at Aetrix Electronics and suitable for automotive electronic control units, industrial programmable logic controllers, and telecom power systems requiring stable component supply with full AEC-Q101 traceability and long-lifecycle support.
Supply support for SMAJ170AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, precision, and automotive-grade validation.
The SMAJ series is engineered specifically for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom applications where consistent clamping, low leakage, and AEC-Q101 compliance are mandatory.
FAQ
What is the maximum clamping voltage of SMAJ170AHE3_A/H at its rated peak pulse current?
The SMAJ170AHE3_A/H has a maximum clamping voltage (VC) of 275 V at its rated peak pulse current of 1.09 A with a 10/1000 μs waveform. This value is measured under standardized test conditions and defines the upper voltage limit imposed on protected circuits during surge events - critical for ensuring compatibility with 300 V-rated downstream components. The SMAJ170AHE3_A/H maintains this clamping performance across its full operating temperature range.
Is SMAJ170AHE3_A/H qualified to AEC-Q101, and what does that mean for automotive use?
Yes, SMAJ170AHE3_A/H is explicitly AEC-Q101 qualified, as confirmed in Vishay's ordering information and device marking ("HE3" suffix). This qualification validates its reliability under automotive environmental stresses including temperature cycling, humidity, mechanical shock, and high-temperature operating life - enabling direct use in engine control units, body electronics, and ADAS power domains without additional qualification testing. The SMAJ170AHE3_A/H meets all stress test requirements defined in the AEC-Q101 standard.
What is the thermal resistance and power dissipation capability of SMAJ170AHE3_A/H?
SMAJ170AHE3_A/H has a typical junction-to-ambient thermal resistance (RθJA) of 120 °C/W and a steady-state power dissipation (PD) rating of 3.3 W at TA = 50 °C on infinite heatsink. When mounted on the recommended 0.2" × 0.2" copper pads per terminal, it safely handles continuous dissipation up to 3.3 W - sufficient for leakage-based heating in high-impedance bias networks. The SMAJ170AHE3_A/H thermal design supports reliable operation up to +150 °C junction temperature.
How does the unidirectional configuration of SMAJ170AHE3_A/H affect its circuit placement?
The unidirectional configuration of SMAJ170AHE3_A/H requires correct polarity alignment: the cathode (marked by a band) must connect to the line being protected (e.g., +170 V rail), and the anode to ground. Reversing polarity prevents clamping during positive transients and risks catastrophic failure under reverse bias. This directional behavior makes SMAJ170AHE3_A/H ideal for DC power rails but unsuitable for AC or bidirectional signal lines - where SMAJ170CA variants would apply. Always verify band orientation during layout.
What packaging and reel options are available for SMAJ170AHE3_A/H?
SMAJ170AHE3_A/H is supplied in 7" diameter plastic tape and reel format with a base quantity of 1800 units per reel (package code "H"). It uses matte tin-plated leads compliant with J-STD-002 and JESD 22-B102 solderability standards, and meets JESD 201 Class 2 whisker resistance. The SMAJ170AHE3_A/H reel packaging supports high-speed automated placement and is compatible with standard SMT reflow profiles up to 260 °C peak temperature.
SMAJ170AHE3_A/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 170V
- Voltage - Breakdown (Min):
- 189V
- Voltage - Clamping (Max) @ Ipp:
- 275V
- Current - Peak Pulse (10/1000µs):
- 1.09A
- Power - Peak Pulse:
- 300W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
SMAJ170AHE3_A/H FAQ
1.How can I place an order for SMAJ170AHE3_A/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMAJ170AHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMAJ170AHE3_A/H reliable?
The price and inventory of SMAJ170AHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMAJ170AHE3_A/H is usually 5 days.
3.What payment methods are accepted for SMAJ170AHE3_A/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMAJ170AHE3_A/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMAJ170AHE3_A/H?
SMAJ170AHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMAJ170AHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMAJ170AHE3_A/H?
For technical support, including SMAJ170AHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMAJ170AHE3_A/H requirements.
6.How does Aetrix verify that SMAJ170AHE3_A/H is sourced from the original manufacturer or authorized distributors?
All SMAJ170AHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMAJ170AHE3_A/H meets industry standards.
7.What is the process for return or replacement of SMAJ170AHE3_A/H?
All SMAJ170AHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with SMAJ170AHE3_A/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMAJ170AHE3_A/H part is unused and in its original packaging.
Return procedure for SMAJ170AHE3_A/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMAJ170AHE3_A/H Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

