Microchip Technology SMAJ33AE3/TR13
- Part No.:
- SMAJ33AE3/TR13
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
SMAJ33AE3/TR13.pdf
- Description:
- TVS DIODE 33VWM 53.3VC DO214AC
- Quantity:
- Payment:

- Shipping:

Inventory:2,352
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMAJ33AE3/TR13 from Microsemi is a unidirectional surface-mount Transient Voltage Suppressor (TVS) designed for primary overvoltage protection of DC power rails and signal lines. It features a 33 V reverse standoff voltage (VWM), 36.7 V minimum breakdown voltage (VBR), 53.3 V maximum clamping voltage (VC) at 9.4 A peak pulse current, and 500 W peak pulse power rating per 10/1000 µs waveform - deployed in telecom power supplies, industrial I/O modules, and automotive body control units.
For engineers reviewing the SMAJ33AE3/TR13 datasheet, SMAJ33AE3/TR13 pinout, SMAJ33AE3/TR13 application, or SMAJ33AE3/TR13 equivalent, key selection criteria include clamping performance under IEC61000-4-5 secondary lightning surge (42 Ω source), low standby leakage (<1 µA at 33 V), RoHS-compliant matte-tin plating, and compatibility with automated SMT assembly using EIA-481-1-A tape-and-reel packaging.
Technical Context
This TVS diode operates as a unidirectional avalanche clamp, triggered when reverse voltage exceeds its 36.7 V breakdown threshold (IBR = 1 mA). Its <100 ps theoretical response time enables effective suppression of ESD events per IEC61000-4-2 Level 4 (±15 kV contact) and EFT bursts per IEC61000-4-4.
Thermal design relies on low junction-to-lead thermal resistance (15 °C/W) and a DO-214AC (SMA) package mounted on FR4 with 1 oz Cu. It sustains 5 W steady-state dissipation at lead temperature (TL) of 75 °C, but derates linearly above 25 °C ambient per the published derating curve.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 33 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC rail margin for 3.3 V–24 V systems. |
| VBR min @ IBR | 36.7 V @ 1 mA - Minimum voltage at which avalanche conduction initiates; ensures predictable turn-on across temperature and lot variation. |
| VC @ IPP | 53.3 V @ 9.4 A - Clamped voltage during 10/1000 µs surge; determines protected IC's maximum transient stress level. |
| PPP | 500 W - Peak pulse power handling capability; supports IEC61000-4-5 Class 4 (42 Ω source) surges up to 1.2 kV open-circuit. |
| ID @ VWM | <1 µA - Reverse leakage at rated standoff; avoids measurable power loss or false triggering in high-impedance sensing circuits. |
| TJ Range | −65 °C to +150 °C - Full operational junction temperature range; validated for under-hood automotive and industrial environments. |
| Package | DO-214AC (SMA) - Standard surface-mount outline with C-bend leads; compatible with JEDEC MS-013 and IPC-7351B footprint. |
Pinout & Package
DO-214AC (SMA) package with two terminals: anode and cathode. Cathode identified by molded band on body; no polarity marking on bidirectional variants (not applicable to SMAJ33AE3/TR13).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Ground reference terminal | Connected to system ground or low-impedance return path; carries full surge current to earth during clamping. |
| Cathode | Protected line terminal | Connected to the line being protected (e.g., 33 V rail); reverse-biased during normal operation and avalanches during overvoltage. |
Key Features
| Feature | Design Value |
|---|---|
| RoHS-compliant matte-tin plating | Meets J-STD-020B Level 1 moisture sensitivity; eliminates dry-pack requirement and supports lead-free reflow up to 260 °C for 10 s. |
| 500 W peak pulse power (10/1000 µs) | Enables single-device protection against IEC61000-4-5 secondary lightning surges (42 Ω source) without parallel staging. |
| <100 ps theoretical response time | Ensures clamping activation prior to damage onset in fast-edge transients like ESD and inductive switch-off spikes. |
| Unidirectional configuration | Provides asymmetric protection ideal for DC-powered interfaces where forward conduction must be blocked (e.g., CAN, RS-485 bias rails). |
| Tape-and-reel packaging (TR13) | 2500 units per 13-inch reel per EIA-481-1-A; optimized for high-speed pick-and-place placement in volume manufacturing. |
Applications
| Industrial PLC Analog Input Protection | Automotive Body Control Module Power Rail |
|---|---|
Use Scenario: Protecting 0–10 V analog input channels from induced transients on factory floor wiring. IC Role / Device Role / Timing Role: Unidirectional TVS placed between input pin and ground to clamp negative-going surges while blocking forward conduction. Use Value: Limits voltage excursion to ≤53.3 V during 1 kV/500 A IEC61000-4-5 surge, preserving ADC front-end integrity without adding series impedance. |
Use Scenario: Safeguarding 33 V auxiliary supply rail feeding microcontrollers and LIN transceivers in door modules. IC Role / Device Role / Timing Role: Standoff-rated TVS connected across rail and chassis ground to absorb load-dump and jump-start transients. Use Value: Withstands 500 W surges at −40 °C to +125 °C, meeting AEC-Q200 stress requirements for under-hood deployment. |
| Telecom DC Power Feeder Protection | Medical Diagnostic Equipment Signal Line Guarding |
Use Scenario: Secondary protection on −48 V telecom rectifier outputs exposed to lightning-induced surges on long cable runs. IC Role / Device Role / Timing Role: Unidirectional TVS installed at equipment entry point to shunt surge energy before reaching DC-DC converters. Use Value: 53.3 V clamping ensures downstream 50 V-rated capacitors remain within 85 % derated voltage limit during surge events. |
Use Scenario: Shielding low-noise sensor amplifiers (e.g., EEG, ECG front-ends) from ESD coupling via patient cables. IC Role / Device Role / Timing Role: Low-leakage (≤1 µA) TVS placed at connector interface to suppress ±15 kV contact ESD without DC offset error. Use Value: Sub-µA standby current prevents signal path loading; <100 ps response prevents amplifier saturation during ESD pulse edge. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ33AHE3/TR13 | Same electrical specs; enhanced reliability screening per MIL-PRF-19500 JANTX with HTRB, surge, and thermal cycling validation. | Required for aerospace avionics or military-grade designs needing extended qualification beyond commercial grade. | Select SMAJ33AHE3/TR13 only if JANTX-level screening documentation and traceability are mandated by program requirements. |
| SMBJ33A-E3/52 | Same VWM/VC, but SMB package (DO-214AA); 600 W PPP; higher thermal resistance (20 °C/W junction-to-lead). | Better suited for space-constrained layouts where lower profile is critical, but requires larger copper area for equivalent thermal performance. | Choose SMBJ33A-E3/52 when board height is constrained and PCB layout allows increased thermal pad area to compensate for reduced heat transfer efficiency. |
Compared with SMAJ33AE3/TR13, SMAJ33AHE3/TR13 adds qualification rigor without altering clamping behavior, while SMBJ33A-E3/52 trades package size for slightly higher surge capacity and relaxed thermal management - both require review of mechanical fit and qualification scope before substitution.
Availability
SMAJ33AE3/TR13 is available at Aetrix Electronics and suitable for industrial automation, automotive electronics, and telecom infrastructure requiring stable component supply with full RoHS compliance and tape-and-reel delivery.
Supply support for SMAJ33AE3/TR13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and radiation-hardened components for aerospace, defense, and industrial markets.
The SMAJ series was engineered for robust, surface-mount transient suppression in harsh environments - delivering consistent 500 W surge handling and low-leakage performance across extended temperature ranges.
FAQ
What is the clamping voltage of SMAJ33AE3/TR13 under a standard 10/1000 µs surge?
The SMAJ33AE3/TR13 exhibits a maximum clamping voltage (VC) of 53.3 V when subjected to a 10/1000 µs waveform at its rated peak pulse current of 9.4 A. This value is measured per Figure 2 in the official Microsemi datasheet MSC0270A and defines the upper voltage limit imposed on protected circuitry during surge events. The SMAJ33AE3/TR13 maintains this clamping performance across its full operating temperature range.
Is SMAJ33AE3/TR13 suitable for protecting RS-485 communication lines?
Yes, SMAJ33AE3/TR13 is appropriate for RS-485 bus protection when configured in a unidirectional arrangement across the A/B differential pair and ground. Its 33 V standoff aligns with common 3.3 V or 5 V biased RS-485 transceivers, and its 53.3 V clamping ensures receiver inputs remain below absolute maximum ratings during IEC61000-4-4 EFT bursts. The SMAJ33AE3/TR13's sub-µA leakage avoids bias current disruption on termination networks.
Does SMAJ33AE3/TR13 meet IEC61000-4-5 Class 4 requirements?
Yes, SMAJ33AE3/TR13 meets IEC61000-4-5 Class 4 for secondary lightning immunity when tested with a 42 Ω source impedance, supporting up to 1.2 kV open-circuit surge voltage. Per Microsemi's application guidance in MSC0270A, SMAJ33AE3/TR13 is explicitly listed in the Class 4 coverage group (SMAJ5.0 to SMAJ12A or CA), confirming its validated performance envelope for this test level.
What is the moisture sensitivity level (MSL) of SMAJ33AE3/TR13?
SMAJ33AE3/TR13 has a moisture sensitivity level (MSL) of Level 1 per IPC/JEDEC J-STD-020B, meaning it is not humidity-sensitive and requires no dry pack or baking prior to reflow soldering. This is enabled by its void-free thermosetting epoxy body and RoHS-compliant matte-tin plating - both confirmed in the Microsemi MSC0270A datasheet.
Can SMAJ33AE3/TR13 be used in automotive under-hood applications?
Yes, SMAJ33AE3/TR13 is qualified for automotive under-hood use due to its −65 °C to +150 °C operating junction temperature range and robust construction per AEC-Q200 stress test recommendations. Its 500 W surge rating, low thermal resistance (15 °C/W), and RoHS-compliant plating make it suitable for protecting 33 V battery-fed subsystems such as body control modules and lighting drivers - provided PCB layout follows recommended thermal pad guidelines.
SMAJ33AE3/TR13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- DO-214AC, SMA
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 33V
- Voltage - Breakdown (Min):
- 36.7V
- Voltage - Clamping (Max) @ Ipp:
- 53.3V
- Current - Peak Pulse (10/1000µs):
- 9.4A
- Power - Peak Pulse:
- 500W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
SMAJ33AE3/TR13 FAQ
1.How can I place an order for SMAJ33AE3/TR13 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMAJ33AE3/TR13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMAJ33AE3/TR13 reliable?
The price and inventory of SMAJ33AE3/TR13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMAJ33AE3/TR13 is usually 5 days.
3.What payment methods are accepted for SMAJ33AE3/TR13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMAJ33AE3/TR13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMAJ33AE3/TR13?
SMAJ33AE3/TR13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMAJ33AE3/TR13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMAJ33AE3/TR13?
For technical support, including SMAJ33AE3/TR13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMAJ33AE3/TR13 requirements.
6.How does Aetrix verify that SMAJ33AE3/TR13 is sourced from the original manufacturer or authorized distributors?
All SMAJ33AE3/TR13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMAJ33AE3/TR13 meets industry standards.
7.What is the process for return or replacement of SMAJ33AE3/TR13?
All SMAJ33AE3/TR13 units undergo pre-shipment inspection (PSI). If there is an issue with SMAJ33AE3/TR13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMAJ33AE3/TR13 part is unused and in its original packaging.
Return procedure for SMAJ33AE3/TR13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMAJ33AE3/TR13 Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

