My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMAJ85AHE3_A/I
- Part No.:
- SMAJ85AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
SMAJ85AHE3_A/I.pdf
- Description:
- TVS DIODE 85VWM 137VC DO214AC
- Quantity:
- Payment:
- Shipping:
Inventory:2,567
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMAJ85AHE3_A/I from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMA (DO-214AC) package, designed for clamping inductive switching transients and ESD events on power and signal lines. It features 85 V stand-off voltage (VWM), 94.4–104 V breakdown voltage (VBR) at 1 mA, 137 V maximum clamping voltage (VC) at 2.2 A peak pulse current (IPPM), and 400 W peak pulse power (10/1000 μs waveform). It is AEC-Q101 qualified and used to protect MOSFETs, ICs, and sensor interfaces in automotive power systems.
For engineers reviewing the SMAJ85AHE3_A/I datasheet, SMAJ85AHE3_A/I pinout, SMAJ85AHE3_A/I application, or SMAJ85AHE3_A/I equivalent, key selection criteria include unidirectional polarity, 137 V clamping performance at 2.2 A, AEC-Q101 qualification status, thermal resistance (RθJA = 120 °C/W), and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.
Technical Context
This TVS diode operates as a voltage-clamping protection device in series with DC power rails or parallel to sensitive inputs. Its glass-passivated junction enables fast response (<1 ns), low incremental surge resistance, and stable clamping under repetitive 10/1000 μs transients at 0.01 % duty cycle. The unidirectional configuration provides forward conduction path only during reverse overvoltage events.
Designed for surface-mount use on PCBs with minimum recommended pad layout, it delivers 400 W peak pulse power up to 78 V and 300 W above that threshold. Its MSL Level 1 rating (JEDEC J-STD-020) and matte tin-plated leads ensure robust reflow solderability and long-term reliability in automotive-grade assemblies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 85 V - Maximum continuous reverse operating voltage before clamping initiates |
| VBR min/max | 94.4 V / 104 V at 1 mA - Confirmed breakdown range defining turn-on threshold tolerance |
| VC @ IPPM | 137 V at 2.2 A - Clamped voltage seen by protected circuit during worst-case 10/1000 μs surge |
| PPPM | 400 W (≤78 V), 300 W (>78 V) - Peak transient energy absorption capability per JEDEC standard waveform |
| ID @ VWM | 1.0 μA - Reverse leakage ensuring minimal standby power loss and signal integrity |
| TJ max | +150 °C - Maximum junction temperature enabling operation in under-hood automotive environments |
| RθJA | 120 °C/W - Thermal resistance indicating required PCB copper area for safe power dissipation |
Pinout & Package
Package: SMA (DO-214AC), surface-mount, low-profile case with cathode band marking. Dimensions: 4.93 mm × 3.99 mm × 2.29 mm (L × W × H); terminals are matte tin-plated for J-STD-002/JESD 22-B102 compliance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry (during normal bias) | Connected to lower-potential side of protected line; forms conduction path when reverse voltage exceeds VBR |
| Cathode | Reverse voltage reference / clamping node | Marked end; tied to higher-potential rail (e.g., VBUS); sinks surge current to ground during overvoltage |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive powertrain and chassis applications requiring high-reliability transient suppression |
| Glass passivated junction | Ensures stable VBR over lifetime and immunity to moisture-induced parameter drift |
| 400 W peak pulse power (10/1000 μs) | Supports IEC 61000-4-5 Level 4 surge immunity without external derating |
| MSL Level 1, 260 °C peak reflow | Enables single-pass lead-free reflow assembly without popcorn or delamination risk |
| Low clamping ratio (VC/VBR ≈ 1.39) | Minimizes stress on downstream MOSFET gate oxides and IC input structures |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Suppressing load-dump spikes (up to 120 V) on 12 V battery-fed ECUs in engine control modules. IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery rail and LDO input to clamp transients before regulation. Use Value: Limits voltage seen by downstream regulators to ≤137 V, preventing latch-up or permanent damage during ISO 7637-2 Pulse 5a events. | Use Scenario: Protecting analog front-end inputs of pressure/temperature sensors connected to CAN or LIN buses. IC Role / Device Role / Timing Role: Parallel-connected clamping device across sensor supply and signal pins to shunt ESD and coupled noise. Use Value: Maintains signal integrity with <1.0 μA leakage at 85 V, avoiding offset errors while surviving ±30 kV HBM ESD per AEC-Q101. |
| DC-DC Converter Input Stage | Motor Drive Gate Driver Protection |
Use Scenario: Safeguarding buck converter inputs against back-EMF from solenoid actuation in HVAC or seat control units. IC Role / Device Role / Timing Role: Primary overvoltage clamp on VIN pin of controller IC, positioned upstream of input capacitor. Use Value: Absorbs 400 W surges with 137 V clamping, keeping controller VIN within absolute maximum rating during 10 ms inductive kick events. | Use Scenario: Shielding high-side N-channel MOSFET gate drivers from Miller-induced voltage overshoot during fast switching. IC Role / Device Role / Timing Role: Clamp diode between gate and source to limit dV/dt-induced gate-source voltage excursions. Use Value: Fast <1 ns response prevents gate oxide rupture; 120 °C/W RθJA allows direct mounting near driver IC without thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ85A-E3/61 | Same electrical specs; RoHS-compliant commercial grade (non-AEC-Q101) | Lacks automotive qualification; unsuitable for safety-critical vehicle subsystems | Select when cost-sensitive industrial or consumer designs do not require AEC-Q101 validation |
| SMAJ85AHM3_A/I | Halogen-free variant; identical VWM, VBR, VC, and PPPM; same AEC-Q101 qualification | No functional difference; meets stricter material compliance (e.g., EU automotive OEM green procurement mandates) | Select when halogen-free materials are contractually required or for global OEM sourcing alignment |
Compared with SMAJ85AHE3_A/I, the SMAJ85A-E3/61 offers identical protection performance but lacks automotive qualification, while SMAJ85AHM3_A/I adds halogen-free construction without altering clamping behavior or thermal limits-making it a drop-in material-compliance upgrade rather than an electrical alternative.
Availability
SMAJ85AHE3_A/I is available at Aetrix Electronics and suitable for automotive power distribution, industrial sensor interface design, and motor drive gate protection requiring stable component supply and full AEC-Q101 traceability.
Supply support for SMAJ85AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability and automotive-grade qualification.
The SMAJ series is engineered specifically for high-energy transient suppression in harsh environments, targeting automotive, industrial, and telecom infrastructure where robustness against ISO 7637-2 and IEC 61000-4-5 threats is mandatory.
FAQ
What is the clamping voltage of SMAJ85AHE3_A/I at its rated peak pulse current?
The SMAJ85AHE3_A/I has a maximum clamping voltage (VC) of 137 V at 2.2 A peak pulse current (IPPM), measured using the standardized 10/1000 μs waveform. This value defines the upper voltage limit imposed on protected circuits during surge events and is critical for ensuring downstream components remain within their absolute maximum ratings. The SMAJ85AHE3_A/I maintains this clamping performance across its qualified operating temperature range.
Is SMAJ85AHE3_A/I suitable for automotive applications?
Yes, SMAJ85AHE3_A/I is AEC-Q101 qualified, making it suitable for automotive applications including engine control units, body electronics, and ADAS sensor modules. Its qualification covers stress tests for temperature cycling, humidity, mechanical shock, and surge immunity-ensuring reliability in under-hood and cabin environments. The SMAJ85AHE3_A/I also meets MSL Level 1 for lead-free reflow, supporting modern automotive PCB assembly processes.
What does the "HE3" suffix indicate in SMAJ85AHE3_A/I?
"HE3" denotes RoHS-compliant construction with AEC-Q101 qualification; the "H" refers to the packaging code (13″ tape and reel), "E3" confirms RoHS compliance, and the underscore "_A/I" specifies revision A in 7500-unit 13″ reel format. This distinguishes SMAJ85AHE3_A/I from commercial-grade variants like SMAJ85A-E3/61 and halogen-free versions such as SMAJ85AHM3_A/I. All HE3-suffix parts share identical electrical performance and automotive qualification.
How does SMAJ85AHE3_A/I compare to bidirectional TVS diodes like SMAJ85CA?
SMAJ85AHE3_A/I is unidirectional and intended for DC line protection with defined polarity, whereas SMAJ85CA is bidirectional and suited for AC or floating signal lines. The SMAJ85AHE3_A/I exhibits forward conduction below ~0.7 V (typical VF), while SMAJ85CA clamps symmetrically in both directions. Their VWM, VBR, and VC values differ accordingly-SMAJ85AHE3_A/I has 85 V VWM and 94.4–104 V VBR, while SMAJ85CA has 85 V VWM but dual-directional VBR. Select SMAJ85AHE3_A/I for polarized power rails.
What PCB layout guidance applies to SMAJ85AHE3_A/I for optimal thermal and surge performance?
For optimal performance, mount SMAJ85AHE3_A/I on 0.2″ × 0.2″ (5.0 mm × 5.0 mm) copper pads per terminal, per Vishay's recommended layout. Use internal or external copper planes to reduce thermal resistance (RθJA = 120 °C/W). Keep traces short and wide between the SMAJ85AHE3_A/I and protected node to minimize inductance, preserving sub-ns response. Avoid thermal relief on pads to maximize heat transfer, especially in high-duty-cycle surge environments.
SMAJ85AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 85V
- Voltage - Breakdown (Min):
- 94.4V
- Voltage - Clamping (Max) @ Ipp:
- 137V
- Current - Peak Pulse (10/1000µs):
- 2.2A
- Power - Peak Pulse:
- 300W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
SMAJ85AHE3_A/I FAQ
1.How can I place an order for SMAJ85AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMAJ85AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMAJ85AHE3_A/I reliable?
The price and inventory of SMAJ85AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMAJ85AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SMAJ85AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMAJ85AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMAJ85AHE3_A/I?
SMAJ85AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMAJ85AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMAJ85AHE3_A/I?
For technical support, including SMAJ85AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMAJ85AHE3_A/I requirements.
6.How does Aetrix verify that SMAJ85AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SMAJ85AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMAJ85AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SMAJ85AHE3_A/I?
All SMAJ85AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMAJ85AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMAJ85AHE3_A/I part is unused and in its original packaging.
Return procedure for SMAJ85AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMAJ85AHE3_A/I Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
