My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMB10J26AHE3/52
- Part No.:
- SMB10J26AHE3/52
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMB10J26AHE3/52.pdf
- Description:
- TVS DIODE 26VWM 42.1VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:7,392
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMB10J26AHE3/52 from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for high-energy surge protection with 1000 W peak pulse power (10/1000 µs), 26 V stand-off voltage (VWM), and 42.1 V clamping voltage (VC) at 23.8 A peak pulse current. It is AEC-Q101 qualified and used to protect automotive sensor signal lines and MOSFET gate drivers against inductive switching transients.
For engineers reviewing the SMB10J26AHE3/52 datasheet, SMB10J26AHE3/52 pinout, SMB10J26AHE3/52 application, or SMB10J26AHE3/52 equivalent, key selection criteria include clamping performance under 10/1000 µs surges, AEC-Q101 qualification status, unidirectional polarity, thermal resistance (RθJA = 72 °C/W), and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector, activating when reverse voltage exceeds its 26 V stand-off threshold (VWM) and clamping transients to ≤42.1 V at 23.8 A. Its glass-passivated junction ensures stable breakdown behavior and low incremental surge resistance.
Designed for automotive-grade reliability, SMB10J26AHE3/52 meets AEC-Q101 stress tests and MSL Level 1 (260 °C reflow), with operating junction temperature range from –55 °C to +150 °C and thermal resistance of 72 °C/W (junction-to-ambient, mounted on 5.0 mm × 5.0 mm pads).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 26 V - Maximum continuous reverse operating voltage before clamping begins |
| VBR min/max | 28.9 V / 31.9 V - Breakdown voltage range at 1 mA test current, defining activation threshold |
| VC @ IPPM | 42.1 V - Clamped voltage during 23.8 A 10/1000 µs surge, limiting stress on protected ICs |
| PPPM | 1000 W - Peak pulse power handling per 10/1000 µs waveform, enabling robust ESD/lightning surge immunity |
| IFSM | 100 A - Non-repetitive forward surge current rating (8.3 ms half-sine), supporting high-energy fault events |
| RθJA | 72 °C/W - Thermal resistance junction-to-ambient on standard 5.0 mm × 5.0 mm pad layout, guiding PCB thermal design |
| AEC-Q101 | Qualified - Validated for automotive applications including engine control, ADAS sensors, and body electronics |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102; polarity indicated by cathode band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to ground or lower-potential rail in unidirectional configuration; carries surge current to reference plane |
| Cathode | Reverse-biased clamping terminal | Connected to protected line (e.g., CAN_H, LIN, sensor output); conducts when line voltage exceeds VWM |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Ensures stable, repeatable breakdown voltage and long-term reliability under repeated surge stress |
| AEC-Q101 qualification | Validates suitability for automotive powertrain, chassis, and ADAS systems requiring zero-defect reliability |
| MSL Level 1 rating | Enables single-reflow assembly without moisture sensitivity concerns (peak 260 °C) |
| Low incremental surge resistance | Minimizes voltage overshoot during fast transients, improving protection margin for downstream ICs |
| Automated placement compatibility | Standard SMB footprint and lead geometry support high-speed pick-and-place with >99.9% placement yield |
Applications
| Automotive Sensor Protection | Power Supply Input Protection |
|---|---|
Use Scenario: Protecting analog outputs of pressure, temperature, or position sensors in engine bay environments subject to load dump and inductive kick. IC Role / Device Role / Timing Role: Shunt clamping device placed between sensor signal line and ground, activated only during overvoltage events. Use Value: Limits transient voltage to ≤42.1 V, preventing damage to 3.3 V or 5 V sensor interface ICs while maintaining signal integrity during normal operation. | Use Scenario: Safeguarding 12 V/24 V automotive power rails feeding microcontrollers and communication transceivers. IC Role / Device Role / Timing Role: Primary surge suppression element located at board-level input connector, upstream of DC/DC converters. Use Value: Absorbs up to 1000 W of 10/1000 µs surge energy, meeting ISO 7637-2 Pulse 1/2/5a requirements without derating. |
| MOSFET Gate Driver Protection | CAN Bus Line Protection |
Use Scenario: Shielding high-side/low-side gate drivers in motor control modules from Miller-induced voltage spikes during switching. IC Role / Device Role / Timing Role: Fast-response clamp across driver output and source/ground, suppressing dv/dt-induced false turn-on. Use Value: Sub-1 ns response time and 42.1 V clamping prevent gate oxide breakdown in 40 V-rated MOSFETs during 100 V transients. | Use Scenario: Adding secondary protection to CAN_H/CAN_L lines in telematics and gateway ECUs exposed to ESD and bus faults. IC Role / Device Role / Timing Role: Unidirectional TVS on each line referenced to ground, complementing integrated transceiver ESD structures. Use Value: Maintains <1 µA leakage at 26 V, avoiding CAN bus bias current errors while clamping EFT bursts to safe levels. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ26A-E3/52 | Same VWM (26 V), same SMB package, but rated for 600 W PPPM (vs. 1000 W) | Limited to lower-energy transients; not AEC-Q101 qualified | Select when cost sensitivity outweighs automotive qualification and higher surge margin |
| 1.5SMC27A | Higher VWM (27 V), same 1000 W rating, but larger SMC (DO-214AB) package (4.5 mm × 3.9 mm vs. 3.94 mm × 2.20 mm) | Requires PCB layout change; higher RθJA (~50 °C/W) due to larger thermal mass | Choose only if existing SMC footprint is fixed and 1 V higher stand-off is acceptable |
Compared with SMBJ26A-E3/52 and 1.5SMC27A, SMB10J26AHE3/52 uniquely delivers 1000 W surge capability in the compact SMB footprint with full AEC-Q101 validation-enabling space-constrained automotive designs without sacrificing protection level or qualification compliance.
Availability
SMB10J26AHE3/52 is available at Aetrix Electronics and suitable for automotive sensor interfaces, power supply inputs, and CAN bus protection requiring stable component supply, AEC-Q101 compliance, and high-power transient suppression in SMB footprint.
Supply support for SMB10J26AHE3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability and automotive-grade performance.
The SMB10J series belongs to Vishay's TRANSZORB® TVS platform, engineered specifically for high-energy transient suppression in harsh automotive and industrial environments where AEC-Q101 validation and consistent clamping performance are mandatory.
FAQ
What is the clamping voltage of SMB10J26AHE3/52 at its rated peak pulse current?
The SMB10J26AHE3/52 has a maximum clamping voltage (VC) of 42.1 V when subjected to its rated peak pulse current (IPPM) of 23.8 A under the standard 10/1000 µs waveform. This value is measured at 25 °C ambient and confirms the device's ability to limit transient overvoltage to a safe level for downstream 3.3 V or 5 V logic circuits. The SMB10J26AHE3/52 datasheet specifies this parameter in the unidirectional electrical characteristics table.
Is SMB10J26AHE3/52 suitable for automotive applications?
Yes, SMB10J26AHE3/52 is explicitly AEC-Q101 qualified, as confirmed in the Vishay document 88422 revision 09-Jan-2024. Its qualification covers stress tests including temperature cycling, humidity bias HAST, and mechanical shock-making it suitable for engine control units, body electronics, and ADAS sensor modules. The HE3 suffix denotes RoHS-compliant and AEC-Q101 qualified construction, distinguishing it from commercial-grade variants.
What is the thermal resistance of SMB10J26AHE3/52, and how does it affect PCB layout?
The SMB10J26AHE3/52 has a typical junction-to-ambient thermal resistance (RθJA) of 72 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value assumes standard SMB pad layout per Vishay's recommended footprint. To maintain safe junction temperatures under repeated surges, designers must allocate adequate copper area and avoid excessive trace length between the SMB10J26AHE3/52 cathode/anode and their respective reference planes.
Does SMB10J26AHE3/52 have polarity marking, and how is it identified?
Yes, SMB10J26AHE3/52 is unidirectional and features a visible cathode band on the SMB (DO-214AA) package body. As stated in the Vishay datasheet, "for unidirectional types the color band denotes cathode end." This band must be oriented toward the higher-potential side of the protected line (e.g., connected to CAN_H or sensor output), while the anode connects to ground or return path-ensuring correct clamping direction during overvoltage events.
What is the maximum peak pulse power rating for SMB10J26AHE3/52, and under what conditions is it specified?
The SMB10J26AHE3/52 has a peak pulse power dissipation (PPPM) rating of 1000 W, specified for a 10/1000 µs double-exponential waveform at TA = 25 °C. This rating applies only to unidirectional operation and is derated linearly above 25 °C ambient per Figure 2 in the Vishay datasheet. The 1000 W rating reflects its high-power density design, distinguishing it from lower-rated SMBJ-series devices.
SMB10J26AHE3/52 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 26V
- Voltage - Breakdown (Min):
- 28.9V
- Voltage - Clamping (Max) @ Ipp:
- 42.1V
- Current - Peak Pulse (10/1000µs):
- 23.8A
- Power - Peak Pulse:
- 1000W (1kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMB10J26AHE3/52 FAQ
1.How can I place an order for SMB10J26AHE3/52 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMB10J26AHE3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMB10J26AHE3/52 reliable?
The price and inventory of SMB10J26AHE3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMB10J26AHE3/52 is usually 5 days.
3.What payment methods are accepted for SMB10J26AHE3/52?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMB10J26AHE3/52 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMB10J26AHE3/52?
SMB10J26AHE3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMB10J26AHE3/52 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMB10J26AHE3/52?
For technical support, including SMB10J26AHE3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMB10J26AHE3/52 requirements.
6.How does Aetrix verify that SMB10J26AHE3/52 is sourced from the original manufacturer or authorized distributors?
All SMB10J26AHE3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMB10J26AHE3/52 meets industry standards.
7.What is the process for return or replacement of SMB10J26AHE3/52?
All SMB10J26AHE3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMB10J26AHE3/52, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMB10J26AHE3/52 part is unused and in its original packaging.
Return procedure for SMB10J26AHE3/52:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMB10J26AHE3/52 Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
