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Vishay General Semiconductor - Diodes Division SMB10J40AHE3_B/H
- Part No.:
- SMB10J40AHE3_B/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMB10J40AHE3_B/H.pdf
- Description:
- 1KW,40V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:
- Shipping:
Inventory:6,989
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Product details
Overview
SMB10J40AHE3_B/H from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for high-energy surge protection with 1000 W peak pulse power (10/1000 µs), 40 V stand-off voltage (VWM), and 64.5 V maximum clamping voltage (VC) at 15.5 A peak pulse current. It protects automotive-grade signal lines and power rails against inductive switching transients and ESD events.
For engineers reviewing the SMB10J40AHE3_B/H datasheet, SMB10J40AHE3_B/H pinout, SMB10J40AHE3_B/H application, or SMB10J40AHE3_B/H equivalent, this AEC-Q101 qualified device offers verified clamping performance, low incremental surge resistance, and MSL Level 1 reflow compatibility - critical for automotive sensor interfaces, DC power input stages, and industrial I/O protection circuits.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: under normal bias it presents <1.0 µA reverse leakage at 40 V, then rapidly avalanches when transient voltage exceeds its 44.4–49.1 V breakdown range (tested at 1 mA). Its glass-passivated junction ensures stable parametric behavior across -55 °C to +150 °C operating temperature.
The SMB10J40AHE3_B/H delivers 1000 W peak pulse power handling with 72 °C/W junction-to-ambient thermal resistance and 20 °C/W junction-to-lead resistance. Its unidirectional polarity features cathode band marking and supports 100 A non-repetitive forward surge current (8.3 ms half-sine), making it suitable for DC-biased protection paths where polarity is fixed.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 40 V - Maximum continuous reverse operating voltage before significant leakage; defines upper limit of protected circuit's steady-state voltage. |
| VBR min/max | 44.4 V / 49.1 V - Breakdown occurs within this range at 1 mA test current; ensures reliable triggering above system nominal voltage. |
| VC @ IPPM | 64.5 V - Clamps transients to ≤64.5 V at 15.5 A peak pulse current (10/1000 µs), limiting stress on downstream ICs like MCUs or transceivers. |
| PPPM | 1000 W - Peak pulse power rating per 10/1000 µs waveform; enables robust suppression of ISO 7637-2 Pulse 1/2a/5a surges in automotive systems. |
| ID @ VWM | ≤1.0 µA - Ultra-low reverse leakage at rated stand-off voltage, minimizing standby power loss in battery-powered applications. |
| TJ max | +150 °C - Maximum junction temperature rating; supports operation in under-hood automotive environments and industrial enclosures. |
| AEC-Q101 | Qualified - Validated for automotive reliability including temperature cycling, HTRB, and ESD testing per AEC standard; required for Tier-1 vehicle subsystems. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102; meets UL 94 V-0 flammability rating. Cathode indicated by color band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / transient return path | Connected to lower-potential side (e.g., GND or negative rail); completes clamping loop during overvoltage event. |
| Cathode | Protected line connection / surge sink node | Connected to line being protected (e.g., 12 V supply or CAN_H); avalanche conduction diverts surge current to anode/GND. |
Key Features
| Feature | Design Value |
|---|---|
| Unidirectional clamping | Enables DC-biased protection without rectification issues; avoids false triggering on negative-going signals in single-supply systems. |
| AEC-Q101 qualification | Validates long-term reliability in automotive environments including thermal shock, humidity, and vibration - mandatory for ADAS and body control modules. |
| Low incremental surge resistance | Minimizes voltage overshoot during fast transients (e.g., load dump), improving margin for 40 V-rated components downstream. |
| MSL Level 1 (260 °C peak) | Supports standard lead-free reflow without moisture-related delamination; eliminates pre-bake requirement for high-volume SMT assembly. |
| Glass passivated junction | Ensures stable VBR and leakage over time and temperature; prevents parameter drift in harsh industrial or automotive under-hood conditions. |
Applications
| Automotive Power Input Protection | Industrial Sensor Signal Line Protection |
|---|---|
Use Scenario: Protecting 12 V/24 V power inputs in automotive ECUs against ISO 7637-2 load dump pulses and alternator ripple. IC Role / Device Role / Timing Role: Shunt TVS diode placed between power rail and chassis ground; clamps transients within nanoseconds. Use Value: Limits voltage to ≤64.5 V during 1000 W surges, safeguarding downstream DC-DC converters and microcontrollers rated for 40 V absolute maximum. |
Use Scenario: Shielding analog sensor outputs (e.g., pressure, temperature) in factory automation PLCs from EFT and surge coupling. IC Role / Device Role / Timing Role: Unidirectional TVS connected between signal line and local ground; absorbs sub-µs transients induced by nearby motor switching. Use Value: Maintains signal integrity with <1.0 µA leakage at 40 V, preventing offset errors in 16-bit ADC front-ends while surviving 15.5 A peak pulses. |
| Automotive CAN Bus Node Protection | Consumer Power Adapter Output Protection |
Use Scenario: Secondary-level surge protection for CAN_H/CAN_L lines in gateway modules exposed to battery transients and ESD. IC Role / Device Role / Timing Role: Paired unidirectional TVS devices (one per line) referenced to common ground; triggered only on overvoltage relative to GND. Use Value: Provides 64.5 V clamping with 72 °C/W thermal resistance, enabling sustained operation in sealed enclosures without derating below 1000 W peak power. |
Use Scenario: Output-stage protection in USB PD and Qi wireless charging adapters against output short-circuit transients and hot-plug spikes. IC Role / Device Role / Timing Role: TVS placed after secondary-side rectifier; clamps flyback-induced voltage spikes on 20 V output rails. Use Value: Withstands 100 A non-repetitive forward surge (8.3 ms), protecting synchronous rectifiers and output capacitors during fault recovery cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ40A-E3/52 | Same SMB package, 40 V VWM, but rated for 600 W PPPM (vs. 1000 W); no AEC-Q101 qualification. | Limited to commercial-grade consumer or industrial equipment without automotive reliability requirements. | Select when cost sensitivity outweighs automotive qualification and higher surge immunity. |
| SMCJ40AHE3_A/H | Higher-power SMC (DO-214AB) package with identical 40 V VWM and 1000 W PPPM, AEC-Q101 qualified. | Requires larger PCB footprint (7.11 mm × 6.22 mm vs. SMB's 4.57 mm × 3.94 mm); suited for primary-side or high-current nodes. | Choose when system-level surge energy exceeds SMB10J40AHE3_B/H's thermal limits or layout allows larger package. |
Compared with SMBJ40A-E3/52, SMB10J40AHE3_B/H delivers 67% higher peak pulse power and automotive qualification; versus SMCJ40AHE3_A/H, it offers 30% smaller footprint with identical electrical specs - enabling compact, AEC-Q101-compliant protection in space-constrained modules.
Availability
SMB10J40AHE3_B/H is available at Aetrix Electronics and suitable for automotive ECU power inputs, industrial sensor interface protection, and consumer power adapter output stages requiring stable component supply, full traceability, and AEC-Q101 compliance.
Supply support for SMB10J40AHE3_B/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and power efficiency.
The SMB10JxxA series targets high-density, high-reliability transient suppression in automotive and industrial systems, delivering enhanced power density and AEC-Q101 validation in the compact SMB footprint.
FAQ
What is the clamping voltage of SMB10J40AHE3_B/H at its rated peak pulse current?
The SMB10J40AHE3_B/H has a maximum clamping voltage (VC) of 64.5 V when subjected to its specified peak pulse current of 15.5 A (10/1000 µs waveform). This value is measured under standardized test conditions and defines the upper voltage limit imposed on the protected circuit during transient events, ensuring compatibility with 40 V-rated downstream components.
Is SMB10J40AHE3_B/H suitable for automotive applications?
Yes, SMB10J40AHE3_B/H is AEC-Q101 qualified and explicitly designated for automotive use with the "HE3" suffix. It undergoes rigorous stress testing including temperature cycling, highly accelerated life testing (HALT), and ESD verification - meeting requirements for engine control units, body electronics, and ADAS sensor modules.
What does the "_B/H" suffix in SMB10J40AHE3_B/H indicate?
The "_B/H" suffix denotes packaging configuration: "B" indicates tape-and-reel format per EIA-481 standards, and "H" specifies a 7-inch diameter reel containing 750 units. This ordering code ensures correct logistics handling and automated placement compatibility in high-volume SMT lines.
How does SMB10J40AHE3_B/H differ from bidirectional TVS diodes like SMB8J40CA?
SMB10J40AHE3_B/H is unidirectional and optimized for DC-biased circuits, offering 1000 W peak pulse power and 100 A forward surge rating. In contrast, SMB8J40CA is bidirectional with 800 W PPPM and no forward surge rating - making SMB10J40AHE3_B/H preferable for power rail protection where polarity is fixed and higher energy handling is required.
What is the thermal resistance of SMB10J40AHE3_B/H, and why does it matter?
SMB10J40AHE3_B/H has a typical junction-to-ambient thermal resistance (RθJA) of 72 °C/W and junction-to-lead resistance (RθJL) of 20 °C/W. These values determine how effectively heat dissipates during repetitive surge events; lower RθJL supports higher transient duty cycles when mounted on adequate copper pads, while RθJA guides board-level thermal design for sustained operation.
SMB10J40AHE3_B/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 40V
- Voltage - Breakdown (Min):
- 44.4V
- Voltage - Clamping (Max) @ Ipp:
- 64.5V
- Current - Peak Pulse (10/1000µs):
- 15.5A
- Power - Peak Pulse:
- 1000W (1kW)
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMB10J40AHE3_B/H FAQ
1.How can I place an order for SMB10J40AHE3_B/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMB10J40AHE3_B/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMB10J40AHE3_B/H reliable?
The price and inventory of SMB10J40AHE3_B/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMB10J40AHE3_B/H is usually 5 days.
3.What payment methods are accepted for SMB10J40AHE3_B/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMB10J40AHE3_B/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMB10J40AHE3_B/H?
SMB10J40AHE3_B/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMB10J40AHE3_B/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMB10J40AHE3_B/H?
For technical support, including SMB10J40AHE3_B/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMB10J40AHE3_B/H requirements.
6.How does Aetrix verify that SMB10J40AHE3_B/H is sourced from the original manufacturer or authorized distributors?
All SMB10J40AHE3_B/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMB10J40AHE3_B/H meets industry standards.
7.What is the process for return or replacement of SMB10J40AHE3_B/H?
All SMB10J40AHE3_B/H units undergo pre-shipment inspection (PSI). If there is an issue with SMB10J40AHE3_B/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMB10J40AHE3_B/H part is unused and in its original packaging.
Return procedure for SMB10J40AHE3_B/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMB10J40AHE3_B/H Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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