Vishay General Semiconductor - Diodes Division SMBG58AHE3/5B
- Part No.:
- SMBG58AHE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-215AA, SMB Gull Wing
- Datasheet:
-
SMBG58AHE3/5B.pdf
- Description:
- TVS DIODE 58VWM 93.6VC DO215AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBG58AHE3/5B from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMBG (DO-215AA) package, designed for robust overvoltage protection of sensitive electronics. It features a 58 V stand-off voltage (VWM), 64.4–71.2 V breakdown voltage (VBR) at 1 mA, 600 W peak pulse power (10/1000 µs), 93.6 V clamping voltage (VC) at 6.4 A, and AEC-Q101 qualification for automotive-grade reliability.
For engineers reviewing the SMBG58AHE3/5B datasheet, SMBG58AHE3/5B pinout, SMBG58AHE3/5B application, or SMBG58AHE3/5B equivalent, key selection criteria include clamping performance under 10/1000 µs surge, unidirectional polarity with cathode band marking, RoHS-compliant matte tin terminations, and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.
Technical Context
This TVS diode operates as a fast-acting shunt protector that clamps transient voltages above its breakdown threshold to safeguard downstream ICs and MOSFETs. Its glass-passivated junction ensures stable leakage (<1.0 µA at VWM) and low incremental surge resistance, enabling consistent clamping across repetitive 0.01% duty-cycle surges.
The device is rated for 150 °C maximum junction temperature and exhibits 100 °C/W junction-to-ambient thermal resistance when mounted per recommended pad layout. Its 100 A IFSM rating supports high-energy 8.3 ms half-sine surge events, while MSL Level 1 moisture sensitivity allows uncompromised reflow at 260 °C peak.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 58 V - Maximum continuous reverse operating voltage before conduction begins |
| VBR (min/max) | 64.4 V / 71.2 V at 1 mA - Confirmed breakdown range ensuring reliable turn-on margin above VWM |
| VC @ IPPM | 93.6 V at 6.4 A - Clamped voltage during full 600 W surge, defining worst-case stress on protected circuit |
| PPPM | 600 W (10/1000 µs) - Peak transient energy handling capacity under standardized waveform |
| IFSM | 100 A (8.3 ms half-sine) - Surge current capability for non-repetitive line transients |
| TJ max. | 150 °C - Maximum junction temperature enabling operation in under-hood automotive environments |
| Leakage ID | <1.0 µA at 58 V - Minimal standby power loss and signal integrity impact in high-impedance circuits |
Pinout & Package
Package: SMBG (DO-215AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode identified by molded band on one end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal in forward bias; connected to system ground or low-side reference | Provides return path during clamping; must be routed with low-inductance trace to minimize VL = L·di/dt overshoot |
| Cathode | Current exit terminal in forward bias; marked with band; connected to protected line | Defines polarity-sensitive placement-reversal disables protection and risks catastrophic failure |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control units and body electronics requiring extended temperature and reliability compliance |
| 600 W peak pulse power (10/1000 µs) | Withstands ISO 7637-2 Pulse 1, 2a, 3a/b and IEC 61000-4-5 surge test levels without degradation |
| Glass passivated junction | Ensures stable VBR tolerance and long-term leakage stability under thermal cycling and humidity exposure |
| MSL Level 1, 260 °C peak reflow | Enables single-pass lead-free reflow without popcorn effect or intermetallic delamination |
| Low profile SMBG package | 0.235–0.255 inch length enables compact placement near connectors or IC power pins without board real estate penalty |
Applications
| Automotive Power Line Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting LIN bus transceivers and microcontroller I/O lines against load dump and alternator ripple in 12 V vehicle systems. IC Role / Device Role / Timing Role: Unidirectional shunt clamp placed between supply rail and ground, activated within <1 ps to limit transients to ≤93.6 V. Use Value: Prevents latch-up or gate oxide damage in 3.3 V/5 V logic interfaces exposed to up to 100 V load dump spikes. | Use Scenario: Shielding analog front-end inputs of pressure/temperature sensors in factory automation PLC modules from ESD and switching noise. IC Role / Device Role / Timing Role: Low-leakage (≤1 µA) standoff device maintaining signal fidelity during normal operation while clamping >64.4 V transients. Use Value: Enables direct connection to 24 V sensor supply rails without additional series impedance, preserving bandwidth and SNR. |
| Telecom DC Power Input Protection | Consumer USB-C Port ESD Suppression |
Use Scenario: Safeguarding PoE-powered network switches and base station RF modules against lightning-induced surges on 48 V DC input lines. IC Role / Device Role / Timing Role: Primary-level TVS placed upstream of DC-DC converters, absorbing 600 W pulses before downstream regulation stages. Use Value: Reduces need for multi-stage protection, lowering BOM count while meeting IEC 61000-4-5 Level 3 (2 kV/1 kA) requirements. | Use Scenario: Adding secondary-level surge immunity to USB-C receptacles in portable monitors and docking stations handling 20 V PD charging. IC Role / Device Role / Timing Role: Unidirectional clamp on VBUS line referenced to chassis ground, triggered only during overvoltage-not during normal 5–20 V operation. Use Value: Maintains USB-IF compliance by avoiding false triggering during hot-plug transitions while blocking 15 kV contact ESD per IEC 61000-4-2. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ58A-E3/5B | Same VWM (58 V), but lower PPPM = 600 W (same rating), higher VC = 93.6 V (identical), different package (SMB vs. SMBG); slightly larger footprint | Compatible in board space-constrained designs where DO-214AA (SMB) pad layout exists; not drop-in due to mechanical mismatch | Select SMBJ58A-E3/5B only if legacy SMB footprint is fixed and thermal derating margin permits same power handling. |
| 1.5KE58A | Higher PPPM = 1500 W, axial DO-201AD package, VC = 95.0 V, no AEC-Q101 qualification, higher leakage (5.0 µA) | Used in non-automotive industrial power supplies where board-level mounting and vibration resistance are less critical | Choose 1.5KE58A for cost-sensitive, non-SMT applications needing higher surge headroom-but not for automotive or high-density PCBs. |
Compared with SMBJ58A-E3/5B and 1.5KE58A, SMBG58AHE3/5B delivers AEC-Q101 assurance, optimized SMT manufacturability in DO-215AA, and identical clamping performance in a smaller footprint-making it the preferred choice for new automotive and space-constrained industrial designs.
Availability
SMBG58AHE3/5B is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor nodes, telecom power supplies, and consumer USB-C PD systems requiring stable component supply with AEC-Q101 validation and RoHS compliance.
Supply support for SMBG58AHE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, precision, and automotive-grade qualification.
The SMBG series was developed specifically for high-reliability surface-mount transient suppression in automotive and industrial environments, balancing low clamping voltage, fast response, and robust surge endurance in compact packages.
FAQ
What is the clamping voltage of SMBG58AHE3/5B at its rated peak pulse current?
The SMBG58AHE3/5B has a maximum clamping voltage (VC) of 93.6 V at its specified peak pulse current (IPPM) of 6.4 A, measured under the standard 10/1000 µs waveform. This value defines the upper voltage limit imposed on protected circuitry during a full 600 W transient event and is confirmed in the Vishay Electrical Characteristics table for SMBG58AHE3/5B.
Is SMBG58AHE3/5B suitable for automotive applications?
Yes, SMBG58AHE3/5B is AEC-Q101 qualified and explicitly rated for automotive use, including under-hood environments with operating junction temperatures up to 150 °C. Its RoHS-compliant HE3 suffix denotes AEC-Q101 qualification, and its construction meets requirements for vibration resistance, thermal cycling, and long-term reliability in engine control, body electronics, and infotainment systems.
What does the "HE3/5B" suffix indicate in SMBG58AHE3/5B?
The "HE3" suffix identifies the SMBG58AHE3/5B as RoHS-compliant and AEC-Q101 qualified, while "5B" specifies packaging in 13-inch diameter plastic tape and reel with a base quantity of 3200 units. This distinguishes it from "52" (7-inch reel, 750 units) and confirms compliance with automotive supply chain traceability and handling standards.
How does SMBG58AHE3/5B differ from bidirectional TVS diodes like SMBG58CA?
SMBG58AHE3/5B is unidirectional and features a cathode band for polarity-sensitive placement, whereas SMBG58CA is bidirectional with no polarity marking and symmetric clamping in both directions. The unidirectional SMBG58AHE3/5B offers lower leakage (<1.0 µA vs. ≤5.0 µA for CA types) and is intended for DC line protection, while SMBG58CA suits AC or floating signal line applications.
What is the thermal resistance of SMBG58AHE3/5B, and how does it affect layout design?
SMBG58AHE3/5B has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on the recommended 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. To maintain safe junction temperature under repeated surges, PCB layout must replicate this pad area and avoid excessive trace length or isolation-otherwise, thermal derating becomes necessary per Figure 2 in the Vishay datasheet.
SMBG58AHE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-215AA, SMB Gull Wing
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 58V
- Voltage - Breakdown (Min):
- 64.4V
- Voltage - Clamping (Max) @ Ipp:
- 93.6V
- Current - Peak Pulse (10/1000µs):
- 6.4A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBG)
SMBG58AHE3/5B FAQ
1.How can I place an order for SMBG58AHE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBG58AHE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBG58AHE3/5B reliable?
The price and inventory of SMBG58AHE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBG58AHE3/5B is usually 5 days.
3.What payment methods are accepted for SMBG58AHE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBG58AHE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBG58AHE3/5B?
SMBG58AHE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBG58AHE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBG58AHE3/5B?
For technical support, including SMBG58AHE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBG58AHE3/5B requirements.
6.How does Aetrix verify that SMBG58AHE3/5B is sourced from the original manufacturer or authorized distributors?
All SMBG58AHE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBG58AHE3/5B meets industry standards.
7.What is the process for return or replacement of SMBG58AHE3/5B?
All SMBG58AHE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBG58AHE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBG58AHE3/5B part is unused and in its original packaging.
Return procedure for SMBG58AHE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBG58AHE3/5B Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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