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Vishay General Semiconductor - Diodes Division SMBG58AHE3/5B

Part No.:
SMBG58AHE3/5B
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-215AA, SMB Gull Wing
Datasheet:
AetrixSMBG58AHE3/5B.pdf
Description:
TVS DIODE 58VWM 93.6VC DO215AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,859

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Product details

Overview

SMBG58AHE3/5B from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMBG (DO-215AA) package, designed for robust overvoltage protection of sensitive electronics. It features a 58 V stand-off voltage (VWM), 64.4–71.2 V breakdown voltage (VBR) at 1 mA, 600 W peak pulse power (10/1000 µs), 93.6 V clamping voltage (VC) at 6.4 A, and AEC-Q101 qualification for automotive-grade reliability.

For engineers reviewing the SMBG58AHE3/5B datasheet, SMBG58AHE3/5B pinout, SMBG58AHE3/5B application, or SMBG58AHE3/5B equivalent, key selection criteria include clamping performance under 10/1000 µs surge, unidirectional polarity with cathode band marking, RoHS-compliant matte tin terminations, and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.

Technical Context

This TVS diode operates as a fast-acting shunt protector that clamps transient voltages above its breakdown threshold to safeguard downstream ICs and MOSFETs. Its glass-passivated junction ensures stable leakage (<1.0 µA at VWM) and low incremental surge resistance, enabling consistent clamping across repetitive 0.01% duty-cycle surges.

The device is rated for 150 °C maximum junction temperature and exhibits 100 °C/W junction-to-ambient thermal resistance when mounted per recommended pad layout. Its 100 A IFSM rating supports high-energy 8.3 ms half-sine surge events, while MSL Level 1 moisture sensitivity allows uncompromised reflow at 260 °C peak.

Key Specifications

ParameterValue and Actual Design Meaning
VWM58 V - Maximum continuous reverse operating voltage before conduction begins
VBR (min/max)64.4 V / 71.2 V at 1 mA - Confirmed breakdown range ensuring reliable turn-on margin above VWM
VC @ IPPM93.6 V at 6.4 A - Clamped voltage during full 600 W surge, defining worst-case stress on protected circuit
PPPM600 W (10/1000 µs) - Peak transient energy handling capacity under standardized waveform
IFSM100 A (8.3 ms half-sine) - Surge current capability for non-repetitive line transients
TJ max.150 °C - Maximum junction temperature enabling operation in under-hood automotive environments
Leakage ID<1.0 µA at 58 V - Minimal standby power loss and signal integrity impact in high-impedance circuits

Pinout & Package

Package: SMBG (DO-215AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode identified by molded band on one end.

Pin/TerminalCircuit RoleDesign Meaning
AnodeCurrent entry terminal in forward bias; connected to system ground or low-side referenceProvides return path during clamping; must be routed with low-inductance trace to minimize VL = L·di/dt overshoot
CathodeCurrent exit terminal in forward bias; marked with band; connected to protected lineDefines polarity-sensitive placement-reversal disables protection and risks catastrophic failure

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive applications including engine control units and body electronics requiring extended temperature and reliability compliance
600 W peak pulse power (10/1000 µs)Withstands ISO 7637-2 Pulse 1, 2a, 3a/b and IEC 61000-4-5 surge test levels without degradation
Glass passivated junctionEnsures stable VBR tolerance and long-term leakage stability under thermal cycling and humidity exposure
MSL Level 1, 260 °C peak reflowEnables single-pass lead-free reflow without popcorn effect or intermetallic delamination
Low profile SMBG package0.235–0.255 inch length enables compact placement near connectors or IC power pins without board real estate penalty

Applications

Automotive Power Line ProtectionIndustrial Sensor Interface Protection

Use Scenario: Protecting LIN bus transceivers and microcontroller I/O lines against load dump and alternator ripple in 12 V vehicle systems.

IC Role / Device Role / Timing Role: Unidirectional shunt clamp placed between supply rail and ground, activated within <1 ps to limit transients to ≤93.6 V.

Use Value: Prevents latch-up or gate oxide damage in 3.3 V/5 V logic interfaces exposed to up to 100 V load dump spikes.

Use Scenario: Shielding analog front-end inputs of pressure/temperature sensors in factory automation PLC modules from ESD and switching noise.

IC Role / Device Role / Timing Role: Low-leakage (≤1 µA) standoff device maintaining signal fidelity during normal operation while clamping >64.4 V transients.

Use Value: Enables direct connection to 24 V sensor supply rails without additional series impedance, preserving bandwidth and SNR.

Telecom DC Power Input ProtectionConsumer USB-C Port ESD Suppression

Use Scenario: Safeguarding PoE-powered network switches and base station RF modules against lightning-induced surges on 48 V DC input lines.

IC Role / Device Role / Timing Role: Primary-level TVS placed upstream of DC-DC converters, absorbing 600 W pulses before downstream regulation stages.

Use Value: Reduces need for multi-stage protection, lowering BOM count while meeting IEC 61000-4-5 Level 3 (2 kV/1 kA) requirements.

Use Scenario: Adding secondary-level surge immunity to USB-C receptacles in portable monitors and docking stations handling 20 V PD charging.

IC Role / Device Role / Timing Role: Unidirectional clamp on VBUS line referenced to chassis ground, triggered only during overvoltage-not during normal 5–20 V operation.

Use Value: Maintains USB-IF compliance by avoiding false triggering during hot-plug transitions while blocking 15 kV contact ESD per IEC 61000-4-2.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMBJ58A-E3/5BSame VWM (58 V), but lower PPPM = 600 W (same rating), higher VC = 93.6 V (identical), different package (SMB vs. SMBG); slightly larger footprintCompatible in board space-constrained designs where DO-214AA (SMB) pad layout exists; not drop-in due to mechanical mismatchSelect SMBJ58A-E3/5B only if legacy SMB footprint is fixed and thermal derating margin permits same power handling.
1.5KE58AHigher PPPM = 1500 W, axial DO-201AD package, VC = 95.0 V, no AEC-Q101 qualification, higher leakage (5.0 µA)Used in non-automotive industrial power supplies where board-level mounting and vibration resistance are less criticalChoose 1.5KE58A for cost-sensitive, non-SMT applications needing higher surge headroom-but not for automotive or high-density PCBs.

Compared with SMBJ58A-E3/5B and 1.5KE58A, SMBG58AHE3/5B delivers AEC-Q101 assurance, optimized SMT manufacturability in DO-215AA, and identical clamping performance in a smaller footprint-making it the preferred choice for new automotive and space-constrained industrial designs.

Availability

SMBG58AHE3/5B is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor nodes, telecom power supplies, and consumer USB-C PD systems requiring stable component supply with AEC-Q101 validation and RoHS compliance.

Supply support for SMBG58AHE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, precision, and automotive-grade qualification.

The SMBG series was developed specifically for high-reliability surface-mount transient suppression in automotive and industrial environments, balancing low clamping voltage, fast response, and robust surge endurance in compact packages.

FAQ

What is the clamping voltage of SMBG58AHE3/5B at its rated peak pulse current?

The SMBG58AHE3/5B has a maximum clamping voltage (VC) of 93.6 V at its specified peak pulse current (IPPM) of 6.4 A, measured under the standard 10/1000 µs waveform. This value defines the upper voltage limit imposed on protected circuitry during a full 600 W transient event and is confirmed in the Vishay Electrical Characteristics table for SMBG58AHE3/5B.

Is SMBG58AHE3/5B suitable for automotive applications?

Yes, SMBG58AHE3/5B is AEC-Q101 qualified and explicitly rated for automotive use, including under-hood environments with operating junction temperatures up to 150 °C. Its RoHS-compliant HE3 suffix denotes AEC-Q101 qualification, and its construction meets requirements for vibration resistance, thermal cycling, and long-term reliability in engine control, body electronics, and infotainment systems.

What does the "HE3/5B" suffix indicate in SMBG58AHE3/5B?

The "HE3" suffix identifies the SMBG58AHE3/5B as RoHS-compliant and AEC-Q101 qualified, while "5B" specifies packaging in 13-inch diameter plastic tape and reel with a base quantity of 3200 units. This distinguishes it from "52" (7-inch reel, 750 units) and confirms compliance with automotive supply chain traceability and handling standards.

How does SMBG58AHE3/5B differ from bidirectional TVS diodes like SMBG58CA?

SMBG58AHE3/5B is unidirectional and features a cathode band for polarity-sensitive placement, whereas SMBG58CA is bidirectional with no polarity marking and symmetric clamping in both directions. The unidirectional SMBG58AHE3/5B offers lower leakage (<1.0 µA vs. ≤5.0 µA for CA types) and is intended for DC line protection, while SMBG58CA suits AC or floating signal line applications.

What is the thermal resistance of SMBG58AHE3/5B, and how does it affect layout design?

SMBG58AHE3/5B has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on the recommended 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. To maintain safe junction temperature under repeated surges, PCB layout must replicate this pad area and avoid excessive trace length or isolation-otherwise, thermal derating becomes necessary per Figure 2 in the Vishay datasheet.

SMBG58AHE3/5B Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-215AA, SMB Gull Wing
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
58V
Voltage - Breakdown (Min):
64.4V
Voltage - Clamping (Max) @ Ipp:
93.6V
Current - Peak Pulse (10/1000µs):
6.4A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBG)

SMBG58AHE3/5B FAQ

1.How can I place an order for SMBG58AHE3/5B through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBG58AHE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBG58AHE3/5B reliable?

The price and inventory of SMBG58AHE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBG58AHE3/5B is usually 5 days.

3.What payment methods are accepted for SMBG58AHE3/5B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBG58AHE3/5B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBG58AHE3/5B?

SMBG58AHE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBG58AHE3/5B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBG58AHE3/5B?

For technical support, including SMBG58AHE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBG58AHE3/5B requirements.

6.How does Aetrix verify that SMBG58AHE3/5B is sourced from the original manufacturer or authorized distributors?

All SMBG58AHE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBG58AHE3/5B meets industry standards.

7.What is the process for return or replacement of SMBG58AHE3/5B?

All SMBG58AHE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBG58AHE3/5B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBG58AHE3/5B part is unused and in its original packaging.

Return procedure for SMBG58AHE3/5B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBG58AHE3/5B Tags

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  • Vishay General Semiconductor - Diodes Division SMBG58AHE3/5B
  • Buy SMBG58AHE3/5B
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