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Vishay General Semiconductor - Diodes Division SMBJ100AHM3_B/I
- Part No.:
- SMBJ100AHM3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ100AHM3_B/I.pdf
- Description:
- 600W,100V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,252
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Product details
Overview
SMBJ100AHM3_B/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 100 V stand-off voltage (VWM), 111–123 V breakdown voltage (VBR) at 1 mA, 162 V maximum clamping voltage (VC) at 3.7 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - used to protect MOSFETs, ICs, and sensor interfaces in industrial power supplies.
For engineers reviewing the SMBJ100AHM3_B/I datasheet, SMBJ100AHM3_B/I pinout, SMBJ100AHM3_B/I application, or SMBJ100AHM3_B/I equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification status, halogen-free RoHS compliance, thermal resistance (RθJA = 100 °C/W), and clamping performance under repetitive surge conditions.
Technical Context
This TVS diode operates as a fast-acting shunt protector: when reverse voltage exceeds VBR, it avalanches to clamp transient energy away from downstream circuitry. Its glass-passivated junction ensures stable breakdown characteristics and low leakage (<1.0 µA at VWM), while the SMB package supports automated placement and meets MSL level 1 (260 °C reflow peak).
The device is rated for 150 °C maximum junction temperature and derates linearly above 25 °C ambient; its 100 °C/W junction-to-ambient thermal resistance requires minimum 5.0 mm × 5.0 mm copper pad per terminal for full 600 W pulse handling. It is not intended for bidirectional protection - use SMBJ100CA for symmetrical clamping.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 100 V - maximum continuous reverse voltage before significant leakage; defines operating margin below clamping threshold |
| VBR (Breakdown Voltage) | 111–123 V at 1 mA - guaranteed avalanche initiation range; ensures predictable turn-on during transients |
| VC (Clamping Voltage) | 162 V at IPPM = 3.7 A - peak voltage seen by protected circuit during 10/1000 µs surge; determines stress on downstream components |
| PPPM (Peak Pulse Power) | 600 W - maximum transient energy dissipation capability with 10/1000 µs waveform at 0.01% duty cycle |
| ID (Reverse Leakage) | ≤1.0 µA at VWM - minimal standby power loss and signal integrity impact in high-impedance circuits |
| TJ max. | 150 °C - sets upper limit for thermal design; requires PCB copper area and airflow planning for sustained operation |
| Package | SMB (DO-214AA) - standardized surface-mount outline with cathode band marking; compatible with JEDEC MS-012AC |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, molded plastic case with matte tin-plated leads. Cathode indicated by a band on the body; anode is unmarked end. Meets UL 94 V-0 flammability rating and JESD 201 Class 2 whisker resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink node | Connected to protected line; conducts avalanche current to ground or lower-potential rail during overvoltage events |
| Anode (unbanded end) | Reference potential node | Typically tied to system ground or common return path; completes current loop during clamping action |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing - suitable for under-hood and ADAS power rails |
| Halogen-free & RoHS-compliant | HM3 suffix denotes halogen-free molding compound and lead finish - meets EU Directive 2011/65/EU and IPC-1752A material declarations |
| 600 W peak pulse power | Handles IEC 61000-4-5 Level 4 surges (4 kV, 2 Ω source) without degradation when mounted on 5.0 mm × 5.0 mm copper pads |
| Fast response time | Sub-nanosecond avalanche turn-on - limits voltage overshoot before protection engages, critical for MOSFET gate and logic IC inputs |
| Low incremental surge resistance | Ensures stable clamping voltage across varying surge currents - reduces risk of secondary overstress during multi-pulse events |
Applications
| Industrial Motor Drives | Automotive Body Control Modules |
|---|---|
|
Use Scenario: Protection of IGBT gate drivers against switching-induced voltage spikes in 24 V DC bus systems. IC Role / Device Role / Timing Role: Unidirectional shunt clamp placed between gate and source, triggered within <1 ns of overvoltage onset. Use Value: Limits gate-source voltage to ≤162 V during 600 W transients, preventing IGBT destruction without adding propagation delay to PWM signals. |
Use Scenario: Safeguarding LIN bus transceivers and microcontroller I/O pins from load dump and jump-start surges. IC Role / Device Role / Timing Role: Standoff protection on 12 V supply rail upstream of LDO regulators and communication ICs. Use Value: Clamps 100 V-rated rail to 162 V during 12 V battery dump events, maintaining regulator input within safe dropout range. |
| Telecom Power Rectifiers | Industrial Sensor Signal Conditioning |
|
Use Scenario: Input-stage protection for AC/DC front-ends exposed to lightning-induced surges on telecom base station power feeds. IC Role / Device Role / Timing Role: Primary-level TVS on bulk DC output after bridge rectifier and bulk capacitor. Use Value: Absorbs 600 W pulses without thermal runaway, preserving hold-up time and avoiding false shutdowns in -48 V systems. |
Use Scenario: Shielding analog front-end amplifiers and ADC inputs in factory-floor pressure/temperature sensors. IC Role / Device Role / Timing Role: Low-leakage (≤1 µA) standoff clamp on 5 V or 3.3 V sensor supply and signal lines. Use Value: Prevents latch-up in precision op-amps during ESD events while introducing negligible offset error or noise. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ100AHE3_B/I | RoHS-compliant but not halogen-free; same electrical specs and AEC-Q101 qualification | Acceptable where halogen content is unrestricted; identical thermal and clamping behavior | Select when cost sensitivity outweighs halogen-free requirement and automotive compliance is mandatory |
| SMBJ100A-M3/5B | Same halogen-free and RoHS compliance; differs only in packaging (3200-unit 13" reel vs. I-tape-and-reel) | No functional difference; suited for high-volume SMT production with different feeder compatibility | Choose based on assembly line tape format requirements - electrical and reliability performance are identical |
Compared with SMBJ100AHM3_B/I, the HE3 variant trades halogen-free construction for slightly lower unit cost while retaining AEC-Q101 qualification, whereas the M3/5B variant offers identical specifications in a larger reel format optimized for automated placement throughput - all three share identical VWM, VC, and PPPM ratings.
Availability
SMBJ100AHM3_B/I is available at Aetrix Electronics and suitable for industrial motor drives, automotive body control modules, and telecom power rectifiers requiring stable component supply with halogen-free and AEC-Q101-compliant transient protection.
Supply support for SMBJ100AHM3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific optimization.
The SMBJ series targets robust, surface-mount transient suppression in harsh environments - engineered for automotive, industrial, and telecom systems where repeatable clamping and long-term stability under surge stress are critical.
FAQ
What is the maximum clamping voltage of SMBJ100AHM3_B/I at its rated peak pulse current?
The SMBJ100AHM3_B/I has a maximum clamping voltage (VC) of 162 V at its specified peak pulse current (IPPM) of 3.7 A with a 10/1000 µs waveform. This value is measured under standard test conditions (TA = 25 °C, mounted on 5.0 mm × 5.0 mm copper pads) and defines the upper voltage limit imposed on protected circuitry during transient events. The SMBJ100AHM3_B/I maintains this clamping performance across its qualified operating temperature range.
Is SMBJ100AHM3_B/I suitable for bidirectional transient protection?
No, SMBJ100AHM3_B/I is a unidirectional TVS diode - it conducts only in reverse bias and must be installed with the cathode toward the protected line. For bidirectional protection, Vishay specifies the SMBJ100CA variant. Using SMBJ100AHM3_B/I in a bidirectional configuration would result in forward conduction during negative transients, potentially damaging the device or failing to suppress.
Does SMBJ100AHM3_B/I meet automotive reliability standards?
Yes, SMBJ100AHM3_B/I is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HM3" and documentation (Document Number: 88392). This qualification covers stress tests including temperature cycling, high-temperature reverse bias, and ESD, making SMBJ100AHM3_B/I suitable for automotive power distribution, body electronics, and ADAS subsystems where field reliability is mandated.
What is the thermal resistance of SMBJ100AHM3_B/I, and how does it affect layout?
The SMBJ100AHM3_B/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on minimum recommended pad layout (0.2" × 0.2" copper per terminal). To sustain full 600 W pulse capability, PCB layout must provide adequate copper area and thermal vias; reducing pad size increases junction temperature and de-rates pulse power. RθJL is 20 °C/W, indicating efficient heat transfer to leads.
How does the HM3 suffix differentiate SMBJ100AHM3_B/I from other SMBJ100A variants?
The "HM3" suffix indicates halogen-free, RoHS-compliant construction with matte tin-plated leads meeting JESD 201 Class 2 whisker resistance - distinct from "E3" (RoHS only) and "HE3" (RoHS + AEC-Q101, but not halogen-free). All three share identical electrical specs and package dimensions, but HM3 satisfies stricter environmental mandates in automotive and green-electronics programs where brominated flame retardants are prohibited.
SMBJ100AHM3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 100V
- Voltage - Breakdown (Min):
- 111V
- Voltage - Clamping (Max) @ Ipp:
- 162V
- Current - Peak Pulse (10/1000µs):
- 3.7A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ100AHM3_B/I FAQ
1.How can I place an order for SMBJ100AHM3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ100AHM3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ100AHM3_B/I reliable?
The price and inventory of SMBJ100AHM3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ100AHM3_B/I is usually 5 days.
3.What payment methods are accepted for SMBJ100AHM3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ100AHM3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ100AHM3_B/I?
SMBJ100AHM3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ100AHM3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ100AHM3_B/I?
For technical support, including SMBJ100AHM3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ100AHM3_B/I requirements.
6.How does Aetrix verify that SMBJ100AHM3_B/I is sourced from the original manufacturer or authorized distributors?
All SMBJ100AHM3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ100AHM3_B/I meets industry standards.
7.What is the process for return or replacement of SMBJ100AHM3_B/I?
All SMBJ100AHM3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ100AHM3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ100AHM3_B/I part is unused and in its original packaging.
Return procedure for SMBJ100AHM3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ100AHM3_B/I Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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