Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Taiwan Semiconductor Corporation SMBJ10C

Part No.:
SMBJ10C
Manufacturer:
Taiwan Semiconductor Corporation
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSMBJ10C.pdf
Description:
600W, 12.4V, 10%, BIDIRECTIONAL,
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,681

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMBJ10C from Taiwan Semiconductor is a bidirectional transient voltage suppressor (TVS) diode in DO-214AA (SMB) package, designed for high-energy ESD and surge protection in signal/power lines. It features 10 V working stand-off voltage (VWM), 18.8 V maximum clamping voltage (VC) at 33 A peak pulse current, and 600 W peak pulse power rating with sub-1 ps response time.

For engineers reviewing the SMBJ10C datasheet, SMBJ10C pinout, SMBJ10C application, or SMBJ10C equivalent, key selection criteria include bipolar clamping symmetry, low leakage (<10 µA at 10 V), ISO 7637-2 Pulse 1/2a/2b/3a/3b compliance, and suitability for automotive load-dump and inductive switching transient suppression.

Technical Context

The SMBJ10C is a unidirectional-capable but explicitly configured bidirectional TVS device-confirmed by its "C" suffix and specification notes stating electrical characteristics apply in both directions. Its glass-passivated junction ensures stable breakdown behavior, and it meets JESD201 Class 2 whisker resistance and J-STD-020 Level 1 moisture sensitivity requirements.

Thermal performance is defined by 10 °C/W junction-to-case (RθJC) and 55 °C/W junction-to-ambient (RθJA) resistance. The device operates across –55 °C to +150 °C junction temperature range and supports 100 A non-repetitive forward surge (IFSM) only in unidirectional mode-irrelevant for SMBJ10C due to its bipolar configuration.

Key Specifications

ParameterValue and Actual Design Meaning
VWM10 V - Maximum continuous reverse voltage before clamping begins; defines safe operating margin for 12 V nominal systems.
VBR min / max11.1 V / 13.6 V - Breakdown occurs within this band at 1 mA test current; ensures reliable turn-on during transients.
VC @ IPP18.8 V at 33 A - Clamped voltage seen by protected circuit during 10/1000 µs surge; limits downstream stress.
PPK600 W - Peak pulse power handling per single 10/1000 µs waveform; supports automotive-level surge immunity.
ID @ VWM<10 µA - Doubled leakage limit vs. unidirectional variants per spec note; confirms bipolar design trade-off.
Response time<1.0 ps - Enables suppression of fast ESD events (IEC 61000-4-2) before IC damage occurs.
PackageDO-214AA (SMB) - Surface-mount outline with 0.090 g mass; compatible with automated placement and reflow.

Pinout & Package

DO-214AA (SMB) package: molded plastic case with matte tin-plated leads, polarity indicated by cathode band (not functional in bidirectional operation). Symmetrical terminal structure supports identical clamping in both directions.

Pin/TerminalCircuit RoleDesign Meaning
Anode/Cathode (bidirectional)Reversible surge conduction pathNo functional polarity; either terminal serves as input/output for transient energy diversion.
CaseNon-electrical mechanical interfacePlastic body provides insulation and thermal path; no internal connection to die.

Key Features

FeatureDesign Value
Glass passivated junctionEnsures stable, repeatable breakdown voltage over temperature and lifetime; eliminates parameter drift under humidity/stress.
ISO 7637-2 complianceValidated for automotive Pulse 1 (inductive load dump), Pulse 2a/2b (switching transients), and Pulse 3a/3b (line impedance coupling).
Sub-1 ps responseClamps ESD events faster than typical CMOS gate oxide breakdown time-prevents latent damage in unprotected ICs.
Level 1 moisture sensitivityZero bake requirement before SMT assembly; reduces manufacturing cost and avoids thermal stress on PCB.
Halogen-free & RoHSMeets IEC 61249-2-21 and EU Directive 2011/65/EU; supports green electronics compliance without performance compromise.

Applications

Automotive Power Line ProtectionIndustrial Sensor Interface Protection

Use Scenario: 12 V battery-fed control modules exposed to load-dump surges up to 40 V and inductive kickback from solenoids/relays.

IC Role / Device Role / Timing Role: Bidirectional clamping element placed between power rail and ground, absorbing energy before it reaches MCU power pins or CAN transceivers.

Use Value: Limits voltage excursion to ≤18.8 V during 33 A transients, preventing latch-up or permanent damage to 5 V/3.3 V logic supplies.

Use Scenario: Analog sensor outputs (e.g., RTD, thermocouple amplifiers) routed through long cables in factory automation environments.

IC Role / Device Role / Timing Role: Low-capacitance shunt protector on differential signal pair, suppressing EFT bursts (IEC 61000-4-4) and contact ESD (±8 kV air/±6 kV contact).

Use Value: Sub-1 ps response ensures clamping initiates before amplifier input stage saturates or sustains gate oxide rupture.

LED Driver Output ProtectionUSB Port ESD Shielding

Use Scenario: Constant-current LED drivers powering exterior lighting where cable harnesses act as antennas for radiated transients.

IC Role / Device Role / Timing Role: Bidirectional TVS placed across driver output terminals to clamp reverse-polarity connection errors and lightning-induced surges.

Use Value: 600 W peak power rating handles repetitive 10/1000 µs pulses common in outdoor lighting EMC testing (ISO 16750-2).

Use Scenario: USB 2.0 data lines (D+/D−) on host controllers exposed to user-handling ESD in consumer electronics.

IC Role / Device Role / Timing Role: Low-leakage (≤10 µA) bidirectional suppressor mounted directly at connector, minimizing trace inductance for optimal high-frequency clamping.

Use Value: 18.8 V clamping prevents overshoot beyond USB PHY absolute maximum ratings (–0.5 V to 4.0 V), avoiding data corruption or port lockup.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMBJ10CA (Taiwan Semiconductor)Identical VWM, VBR, VC, and PPK; "CA" denotes same bidirectional construction with alternate marking code.No functional difference; used interchangeably in BOMs where marking or internal lot tracking differs.Select SMBJ10CA only if required by OEM sourcing documentation or legacy design reuse.
SMLJ10C (Littelfuse)Same DO-214AA package, 10 V VWM, 18.8 V VC @ 33 A, but rated for 1000 W PPK (higher surge margin).Better suited for harsher environments (e.g., commercial vehicle alternator load-dump) where 600 W may be marginal.Choose SMLJ10C when system-level surge testing exceeds ISO 7637-2 Pulse 5a (load dump) requirements.

Compared with SMBJ10C, SMBJ10CA offers identical protection performance with alternate marking, while SMLJ10C provides higher 1000 W surge capacity in the same footprint-enabling design margin extension without layout change.

Availability

SMBJ10C is available at Aetrix Electronics and suitable for automotive infotainment power rails, industrial sensor interfaces, LED lighting drivers, and USB port ESD protection requiring stable component supply and full traceability.

Supply support for SMBJ10C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in protection devices, rectifiers, and MOSFETs since 1979.

The SMBJ series was developed specifically for surface-mount surge immunity in automotive and industrial systems, emphasizing robustness against ISO 7637-2 and IEC 61000-4-x threats while maintaining tight parametric tolerances and high reliability.

FAQ

What is the clamping voltage of SMBJ10C and how is it measured?

The SMBJ10C has a maximum clamping voltage (VC) of 18.8 V, measured at 33 A peak impulse current with a 10/1000 µs waveform per IEC 61000-4-5. This value represents the highest voltage the device allows across its terminals during standardized surge testing, ensuring downstream components remain within safe operating limits. The SMBJ10C maintains this clamping performance bidirectionally.

Is SMBJ10C unidirectional or bidirectional, and how can I identify its polarity?

SMBJ10C is a bidirectional TVS diode, confirmed by its "C" suffix and explicit specification notes stating electrical characteristics apply in both directions. Unlike unidirectional variants (e.g., SMBJ10A), it has no functional anode/cathode-either terminal conducts equally during positive or negative transients. No cathode band is present or required on the DO-214AA package.

Does SMBJ10C meet automotive ESD and surge standards?

Yes, SMBJ10C meets ISO 7637-2 for automotive transient immunity (Pulse 1, 2a, 2b, 3a, 3b) and supports IEC 61000-4-2 ESD (±8 kV contact, ±15 kV air) and IEC 61000-4-4 EFT (4 kV) due to its sub-1 ps response and low clamping voltage. Its glass-passivated junction and –55 °C to +150 °C operating range further validate its suitability for under-hood automotive use.

What is the leakage current specification for SMBJ10C at its working voltage?

At its 10 V working stand-off voltage (VWM), SMBJ10C exhibits a maximum blocking leakage current (ID) of 10 µA-double the 5 µA limit specified for unidirectional variants per datasheet Note 5. This elevated leakage is an inherent trade-off of its symmetric bidirectional construction and remains well below levels that would affect typical 12 V system bias networks.

Can SMBJ10C replace SMBJ10A in an existing design?

No-SMBJ10C and SMBJ10A are not interchangeable. SMBJ10A is unidirectional with a cathode band and asymmetric conduction (forward-biased in one direction), while SMBJ10C is bidirectional with no polarity marking and equal clamping in both directions. Substituting one for the other risks incorrect circuit behavior, especially in DC-biased lines where reverse conduction must be blocked.

SMBJ10C Specifications

Product attributes
Attribute value
Manufacturer:
Taiwan Semiconductor Corporation
Package/Case:
DO-214AA, SMB
Series:
SMBJ
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
-
Bidirectional Channels:
1
Voltage - Reverse Standoff (Typ):
10V
Voltage - Breakdown (Min):
11.1V
Voltage - Clamping (Max) @ Ipp:
18.8V
Current - Peak Pulse (10/1000µs):
33A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMB)

SMBJ10C FAQ

1.How can I place an order for SMBJ10C through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBJ10C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBJ10C reliable?

The price and inventory of SMBJ10C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ10C is usually 5 days.

3.What payment methods are accepted for SMBJ10C?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ10C transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBJ10C?

SMBJ10C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBJ10C order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBJ10C?

For technical support, including SMBJ10C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ10C requirements.

6.How does Aetrix verify that SMBJ10C is sourced from the original manufacturer or authorized distributors?

All SMBJ10C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ10C meets industry standards.

7.What is the process for return or replacement of SMBJ10C?

All SMBJ10C units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ10C, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBJ10C part is unused and in its original packaging.

Return procedure for SMBJ10C:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBJ10C Tags

  • SMBJ10C
  • SMBJ10C PDF
  • SMBJ10C Datasheet
  • SMBJ10C Specifications
  • SMBJ10C Images
  • Taiwan Semiconductor Corporation
  • Taiwan Semiconductor Corporation SMBJ10C
  • Buy SMBJ10C
  • SMBJ10C Price
  • SMBJ10C Distributor
  • SMBJ10C Supplier
  • SMBJ10C Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER