Vishay General Semiconductor - Diodes Division SMBJ110A-E3/5B
- Part No.:
- SMBJ110A-E3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ110A-E3/5B.pdf
- Description:
- TVS DIODE 110VWM 177VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:2,060
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ110A-E3/5B from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed to protect sensitive electronics against voltage transients induced by inductive load switching and lightning surges. It features a 110 V stand-off voltage (VWM), 122–135 V breakdown voltage (VBR) at 1 mA, 177 V maximum clamping voltage (VC) at 3.4 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform.
For engineers reviewing the SMBJ110A-E3/5B datasheet, SMBJ110A-E3/5B pinout, SMBJ110A-E3/5B application, or SMBJ110A-E3/5B equivalent, this device is selected for robust overvoltage protection on DC power rails, MOSFET gate drivers, and industrial sensor signal lines where fast response (<1 ps), low clamping ratio, and AEC-Q101-qualified reliability are required.
Technical Context
The SMBJ110A-E3/5B operates as a unidirectional avalanche diode, conducting only in reverse bias above its breakdown threshold to shunt transient energy to ground. Its glass-passivated junction ensures stable VBR tolerance (±5%) and low incremental surge resistance, enabling precise clamping within ±5% of rated VC across production lots.
Thermally, it delivers 5.0 W steady-state power dissipation at TA = 50 °C with RθJA = 100 °C/W and RθJL = 20 °C/W, supporting operation up to +150 °C junction temperature. Polarity is marked by a cathode band; no marking applies to bidirectional variants.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 110 V - Maximum continuous reverse operating voltage before conduction begins; defines safe DC rail margin for 120 VAC-derived supplies. |
| VBR @ IT = 1 mA | 122–135 V - Breakdown voltage range confirming tight tolerance for predictable clamping onset in high-voltage industrial systems. |
| VC @ IPPM = 3.4 A | 177 V - Clamped voltage during 10/1000 µs transient; limits downstream IC stress to ≤177 V under worst-case 600 W surge. |
| PPPM | 600 W - Peak pulse power handling per single 10/1000 µs event; supports IEC 61000-4-5 Level 4 surge immunity testing. |
| IFSM | 100 A - Non-repetitive forward surge rating (8.3 ms half-sine); protects against accidental polarity reversal or inrush events. |
| TJ max. | +150 °C - Maximum junction temperature enabling use in under-hood automotive and high-ambient industrial environments. |
| Package | SMB (DO-214AA) - Standardized surface-mount outline with 0.205" × 0.130" footprint; compatible with automated pick-and-place and reflow profiles up to 260 °C peak. |
Pinout & Package
Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads, UL 94 V-0 rated, MSL Level 1 compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current input / transient return path | Connected to protected line (e.g., DC+ rail); conducts during reverse transient when cathode is grounded. |
| Cathode | Clamping reference / ground connection | Must be tied to system ground or low-impedance return; establishes clamping threshold relative to ground potential. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables compliance with IEC 61000-4-5 surge immunity requirements for industrial control and telecom infrastructure. |
| 177 V clamping voltage at 3.4 A | Provides 37% clamping ratio (VC/VWM), limiting voltage overshoot to safe levels for 150 V-rated MOSFETs and gate drivers. |
| Glass passivated junction | Ensures long-term stability of VBR and leakage (<1 µA at VWM) across temperature and lifetime in harsh environments. |
| RoHS-compliant, commercial grade (E3 suffix) | Meets global environmental regulations without halogen content restrictions; suitable for consumer, industrial, and computing applications. |
| MSL Level 1, 260 °C reflow compatible | Eliminates moisture sensitivity concerns and enables standard SMT assembly without baking or special handling. |
Applications
| Industrial Motor Drives | Automotive Body Control Modules |
|---|---|
|
Use Scenario: Protection of IGBT gate driver supply rails against inductive kickback from solenoid valves and relay coils. IC Role / Device Role / Timing Role: Unidirectional TVS clamping transient spikes on 12 V or 24 V DC bus lines upstream of gate driver ICs. Use Value: Prevents gate oxide damage by limiting voltage to ≤177 V during 600 W surges, extending driver IC lifetime in factory automation systems. |
Use Scenario: Safeguarding LIN bus transceivers and microcontroller I/O pins from load dump and jump-start transients. IC Role / Device Role / Timing Role: Standoff protection element placed between LIN line and ground, activated only during >122 V events. Use Value: Maintains signal integrity below 110 V normal operation while clamping 12 V system transients to <177 V, meeting ISO 7637-2 Pulse 5a requirements. |
| Telecom Power Supply Inputs | Renewable Energy Inverter DC Links |
|
Use Scenario: Overvoltage suppression on -48 V telecom rectifier outputs exposed to lightning-induced surges on outdoor cabling. IC Role / Device Role / Timing Role: Primary transient shunt on DC input stage, coordinated with upstream MOVs for staged energy absorption. Use Value: Responds in <1 ps to clamp 10/1000 µs surges to 177 V, preventing latch-up in PMICs and protecting isolated DC/DC controllers. |
Use Scenario: Protection of photovoltaic string combiner box inputs against lightning-induced common-mode transients on 1000 V DC strings. IC Role / Device Role / Timing Role: Secondary-level clamping device on PV+ rail, used in parallel arrays to distribute 600 W surge energy. Use Value: Withstands repeated 1000 V DC bias while clamping transients to 177 V, reducing failure rate in solar farm monitoring electronics. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ110A-M3/5B | Halogen-free, RoHS-compliant variant with identical electrical specs and SMB package. | No functional difference; selected where halogen-free materials are mandated by OEM sustainability policies. | Choose M3/5B for green manufacturing programs requiring halogen-free bill-of-materials. |
| SMBJ110AHM3_B/I | AEC-Q101 qualified, halogen-free, 13" tape-and-reel packaging; same VWM, VBR, VC, PPPM. | Qualified for automotive under-hood use; validated for temperature cycling, humidity, and mechanical shock per AEC-Q101. | Specify HM3_B/I for automotive-grade designs requiring certified reliability beyond commercial spec. |
Compared with SMBJ110A-E3/5B, the M3/5B offers identical performance with halogen-free construction, while SMBJ110AHM3_B/I adds AEC-Q101 qualification for automotive deployment-neither is pin-compatible with bidirectional variants like SMBJ110CA, and all require cathode-grounded layout.
Availability
SMBJ110A-E3/5B is available at Aetrix Electronics and suitable for industrial motor drives, telecom power inputs, renewable energy inverters, and automotive body control modules requiring stable component supply, consistent lead-time visibility, and full traceability.
Supply support for SMBJ110A-E3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series is engineered for high-energy transient suppression in space-constrained surface-mount applications, targeting industrial, automotive, and telecom systems where robustness and repeatable clamping performance are critical.
FAQ
What is the maximum clamping voltage of SMBJ110A-E3/5B under a 10/1000 µs surge?
The SMBJ110A-E3/5B has a maximum clamping voltage (VC) of 177 V when subjected to its rated peak pulse current of 3.4 A with a 10/1000 µs waveform. This value is measured per Figure 1 in Vishay document 88392 and defines the upper voltage limit imposed on protected circuitry during standardized surge events. The SMBJ110A-E3/5B maintains this clamping performance across its full operating temperature range.
Is SMBJ110A-E3/5B suitable for automotive applications?
The SMBJ110A-E3/5B is a commercial-grade, RoHS-compliant part and is not AEC-Q101 qualified. For automotive under-hood or safety-critical use, Vishay offers the SMBJ110AHM3_B/I variant, which carries full AEC-Q101 qualification. The SMBJ110A-E3/5B may be used in non-automotive or non-safety-related vehicle subsystems (e.g., infotainment power rails) but requires explicit customer validation per ISO/TS 16949 design controls.
What does the "E3/5B" suffix indicate in SMBJ110A-E3/5B?
The "E3" suffix denotes RoHS-compliant, commercial-grade construction with matte tin-plated leads; "5B" specifies packaging in 13-inch diameter plastic tape-and-reel with 3200 units per reel. This ordering code aligns with Vishay's standard commercial distribution channel and is distinct from AEC-Q101 variants (HE3/HM3) or halogen-free-only versions (M3). The SMBJ110A-E3/5B meets JESD201 Class 2 whisker resistance and J-STD-020 MSL Level 1 reflow requirements.
How does SMBJ110A-E3/5B differ from bidirectional variants like SMBJ110CA?
The SMBJ110A-E3/5B is unidirectional, with polarity marked by a cathode band and intended for DC line-to-ground protection. In contrast, SMBJ110CA is bidirectional, lacks polarity marking, and clamps symmetrically in both directions-making it suitable for AC signal lines or differential buses. Their VBR, VC, and PPPM values differ slightly due to internal structure; SMBJ110A-E3/5B cannot substitute for SMBJ110CA without circuit redesign and grounding reassessment.
What thermal derating applies to SMBJ110A-E3/5B above 25 °C ambient?
SMBJ110A-E3/5B follows Vishay's standard derating curve (Figure 2 in doc 88392): its peak pulse power capability decreases linearly above TA = 25 °C, reaching ~50% of 600 W at TA = 100 °C. Steady-state power dissipation (PD) is rated at 5.0 W at TA = 50 °C and must be further reduced per RθJA = 100 °C/W. Layout with 0.2" × 0.2" copper pads per terminal is required to achieve published ratings. The SMBJ110A-E3/5B remains fully operational up to TJ = +150 °C.
SMBJ110A-E3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 110V
- Voltage - Breakdown (Min):
- 122V
- Voltage - Clamping (Max) @ Ipp:
- 177V
- Current - Peak Pulse (10/1000µs):
- 3.4A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ110A-E3/5B FAQ
1.How can I place an order for SMBJ110A-E3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ110A-E3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ110A-E3/5B reliable?
The price and inventory of SMBJ110A-E3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ110A-E3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ110A-E3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ110A-E3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ110A-E3/5B?
SMBJ110A-E3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ110A-E3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ110A-E3/5B?
For technical support, including SMBJ110A-E3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ110A-E3/5B requirements.
6.How does Aetrix verify that SMBJ110A-E3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ110A-E3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ110A-E3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ110A-E3/5B?
All SMBJ110A-E3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ110A-E3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ110A-E3/5B part is unused and in its original packaging.
Return procedure for SMBJ110A-E3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ110A-E3/5B Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

;;2.jpg)