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Vishay General Semiconductor - Diodes Division SMBJ110AHM3/I
- Part No.:
- SMBJ110AHM3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ110AHM3/I.pdf
- Description:
- TVS DIODE 110VWM 177VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:8,574
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Product details
Overview
SMBJ110AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed for robust overvoltage protection of sensitive electronics. It features a 110 V stand-off voltage (VWM), 122–135 V breakdown voltage (VBR) at 1 mA, 177 V maximum clamping voltage (VC) at 3.4 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - deployed on power rails and signal lines in industrial motor drives and telecom interface circuits.
For engineers reviewing the SMBJ110AHM3/I datasheet, SMBJ110AHM3/I pinout, SMBJ110AHM3/I application, or SMBJ110AHM3/I equivalent, this page delivers verified electrical parameters, thermal derating behavior, AEC-Q101 qualification status, halogen-free RoHS compliance, and real-world clamping performance under surge conditions - critical for automotive-grade ESD/surge co-design and IEC 61000-4-5 system-level compliance validation.
Technical Context
This TVS diode operates as a unidirectional avalanche clamp, leveraging glass-passivated silicon junction technology to deliver sub-nanosecond response time and low incremental surge resistance. Its 177 V clamping voltage at 3.4 A ensures reliable protection of downstream MOSFET gate drivers and microcontroller I/O pins against lightning-induced surges and inductive switching transients.
The device is rated for -55 °C to +150 °C operating junction temperature, with thermal resistance RθJA = 100 °C/W (typ.) and RθJL = 20 °C/W (typ.), enabling stable operation on standard PCB copper pads without heatsinking in space-constrained designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 110 V - Maximum continuous reverse working voltage before clamping begins; defines safe operating margin above nominal rail voltage. |
| VBR (min/max) | 122 V / 135 V at 1 mA - Breakdown threshold range ensuring consistent avalanche initiation across production lots. |
| VC @ IPPM | 177 V at 3.4 A - Clamped voltage during 10/1000 µs surge; determines maximum stress imposed on protected ICs. |
| PPPM | 600 W - Peak pulse power handling capability; supports IEC 61000-4-5 Level 4 (4 kV) surge immunity testing. |
| IFSM | 100 A - Non-repetitive forward surge current rating (8.3 ms half-sine); validates robustness against accidental polarity reversal events. |
| TJ max | +150 °C - Maximum junction temperature; enables use in under-hood automotive modules and high-ambient industrial enclosures. |
| Package | SMB (DO-214AA) - Surface-mount outline with 5.59 mm × 4.06 mm footprint and 2.20 mm height; compatible with automated pick-and-place and reflow soldering. |
Pinout & Package
Package: SMB (DO-214AA), unidirectional configuration with cathode band marking on one end. Matte tin-plated leads meet J-STD-002 and JESD 22-B102 solderability standards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side connection point | Connected to ground or low-voltage reference; forms current path during reverse-biased clamping event. |
| Cathode | High-side connection point | Connected to protected line (e.g., 110 V DC bus or RS-485 A/B line); blocks conduction until VWM exceeded. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables single-device protection against IEC 61000-4-5 4 kV surge events without external series impedance. |
| AEC-Q101 qualified (HM3 suffix) | Validated for automotive powertrain and body electronics applications requiring zero-defect reliability and extended temperature operation. |
| Halogen-free & RoHS-compliant | Meets IPC-1752A material declaration requirements and EU Directive 2011/65/EU for environmentally responsible manufacturing. |
| MSL Level 1 (260 °C peak) | Supports lead-free reflow assembly without moisture sensitivity concerns or baking preconditioning. |
| Low clamping ratio (VC/VBR ≈ 1.4) | Minimizes voltage overshoot during transient events, reducing risk of latch-up or gate oxide damage in protected FETs and ICs. |
Applications
| Industrial Motor Drives | Telecom Power Interfaces |
|---|---|
|
Use Scenario: Protection of 110 V DC bus in servo amplifier front-end against inductive kickback from H-bridge switching. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between DC+ and chassis ground to limit voltage spikes to ≤177 V during turn-off. Use Value: Prevents destructive overvoltage on IGBT gate drivers and isolated DC-DC controller ICs during fault conditions. |
Use Scenario: Surge suppression on -48 V telecom power feed lines entering remote radio units (RRUs). IC Role / Device Role / Timing Role: Standoff-rated TVS connected anode-to-ground to absorb lightning-induced common-mode surges per IEC 61000-4-5. Use Value: Maintains <1 µs response time and holds clamped voltage below -55 V absolute rating of downstream PMICs and PHY ICs. |
| Automotive Body Control Modules | Industrial PLC Analog Inputs |
|
Use Scenario: Input protection for LIN bus transceivers powered from 12 V battery with load-dump transients up to 35 V. IC Role / Device Role / Timing Role: Secondary TVS stage after primary 35 V clamp, configured with 110 V VWM to avoid false triggering during normal operation. Use Value: Provides AEC-Q101-qualified backup protection when primary clamp fails or during extreme cold-crank conditions. |
Use Scenario: Overvoltage safeguard on 4–20 mA current loop inputs exposed to field wiring faults and ESD events. IC Role / Device Role / Timing Role: High-VWM TVS placed across input terminals to shunt >110 V transients before reaching precision op-amp front-end. Use Value: Eliminates need for active crowbar circuitry while preserving <0.1% gain accuracy and 16-bit ADC resolution. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ110AHE3/I | Same electrical specs, but RoHS-compliant commercial grade (not AEC-Q101 qualified); uses standard tin plating instead of whisker-tested matte tin. | Lacks automotive qualification; suitable for industrial/commercial systems where AEC-Q101 is not mandated. | Select SMBJ110AHE3/I for cost-sensitive non-automotive designs requiring identical clamping performance. |
| SMCJ110A-M3/5B | Same VWM/VC, but larger SMC (DO-214AB) package; higher PPPM = 1500 W; RθJA = 40 °C/W (lower thermal resistance). | Better thermal performance and surge margin; requires larger PCB area and higher assembly cost. | Choose SMCJ110A-M3/5B when system-level surge testing exceeds 600 W or ambient temperature exceeds 105 °C. |
Compared with SMBJ110AHM3/I, SMBJ110AHE3/I offers identical protection performance without automotive qualification, while SMCJ110A-M3/5B trades compact size for higher surge capacity and improved thermal dissipation - enabling selection based on qualification requirements and thermal design constraints.
Availability
SMBJ110AHM3/I is available at Aetrix Electronics and suitable for industrial motor drives, telecom power interfaces, automotive body control modules, and industrial PLC analog inputs requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for SMBJ110AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and power MOSFETs with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series was engineered for high-energy transient suppression in space-constrained surface-mount applications, targeting automotive, industrial, and telecom systems needing AEC-Q101-qualified, halogen-free protection components.
FAQ
What is the maximum clamping voltage of SMBJ110AHM3/I under a 10/1000 µs surge?
The SMBJ110AHM3/I has a maximum clamping voltage (VC) of 177 V at 3.4 A peak pulse current (IPPM) under the standardized 10/1000 µs waveform. This value is measured per Figure 1 in Vishay Document 88392 and defines the upper voltage limit imposed on protected circuitry during surge events. The SMBJ110AHM3/I maintains this clamping performance across its full operating temperature range (-55 °C to +150 °C) with minimal drift.
Is SMBJ110AHM3/I qualified for automotive applications?
Yes, SMBJ110AHM3/I is AEC-Q101 qualified, as confirmed by the "HM3" suffix in its ordering code - indicating halogen-free, RoHS-compliant construction with full automotive reliability testing including temperature cycling, humidity bias HAST, and mechanical shock. This qualification makes SMBJ110AHM3/I suitable for under-hood and body electronics where zero-defect operation is required.
What does the "HM3" suffix mean in SMBJ110AHM3/I?
The "HM3" suffix in SMBJ110AHM3/I denotes halogen-free, RoHS-compliant, and AEC-Q101-qualified construction. It specifies matte tin-plated leads meeting JESD 201 Class 2 whisker resistance, MSL Level 1 moisture sensitivity, and 260 °C peak reflow compatibility. This distinguishes SMBJ110AHM3/I from commercial-grade variants like SMBJ110A-E3/I and confirms its suitability for automotive and high-reliability industrial use.
Can SMBJ110AHM3/I be used in bidirectional protection circuits?
No, SMBJ110AHM3/I is a unidirectional TVS diode, identifiable by its cathode band marking and specified electrical characteristics for reverse-biased operation only. For bidirectional protection, Vishay offers the SMBJ110CA variant (with "CA" suffix), which provides symmetrical clamping in both polarities. Using SMBJ110AHM3/I in bidirectional configurations risks failure during positive transients due to lack of forward conduction capability.
What is the thermal resistance of SMBJ110AHM3/I, and how does it affect PCB layout?
SMBJ110AHM3/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal, as defined in Vishay Document 88392. This value assumes minimum recommended pad layout; increasing copper area or adding thermal vias reduces RθJA and improves sustained surge handling. Layout must maintain isolation between anode/cathode pads and avoid thermal coupling to heat-generating components.
SMBJ110AHM3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 110V
- Voltage - Breakdown (Min):
- 122V
- Voltage - Clamping (Max) @ Ipp:
- 177V
- Current - Peak Pulse (10/1000µs):
- 3.4A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ110AHM3/I FAQ
1.How can I place an order for SMBJ110AHM3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ110AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ110AHM3/I reliable?
The price and inventory of SMBJ110AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ110AHM3/I is usually 5 days.
3.What payment methods are accepted for SMBJ110AHM3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ110AHM3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ110AHM3/I?
SMBJ110AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ110AHM3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ110AHM3/I?
For technical support, including SMBJ110AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ110AHM3/I requirements.
6.How does Aetrix verify that SMBJ110AHM3/I is sourced from the original manufacturer or authorized distributors?
All SMBJ110AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ110AHM3/I meets industry standards.
7.What is the process for return or replacement of SMBJ110AHM3/I?
All SMBJ110AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ110AHM3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ110AHM3/I part is unused and in its original packaging.
Return procedure for SMBJ110AHM3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ110AHM3/I Tags
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DESD3V3E1BL-7B
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Diodes Incorporated
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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