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Vishay General Semiconductor - Diodes Division SMBJ110CD-M3/I
- Part No.:
- SMBJ110CD-M3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ110CD-M3/I.pdf
- Description:
- TVS DIODE 110VWM 174VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:11,508
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Product details
Overview
SMBJ110CD-M3/I from Vishay General Semiconductor is a bidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed for clamping voltage transients on signal or power lines. It features a 110 V stand-off voltage (VWM), 124–133 V breakdown voltage (VBR) at 1 mA, 600 W peak pulse power (10/1000 μs), and clamps to ≤174 V at 3.45 A surge current - used to protect MOSFETs and sensor interfaces in industrial motor drives.
For engineers reviewing the SMBJ110CD-M3/I datasheet, SMBJ110CD-M3/I pinout, SMBJ110CD-M3/I application, or SMBJ110CD-M3/I equivalent, key selection criteria include bidirectional clamping capability, ±3.5 % VBR tolerance, low leakage (<0.5 μA at VWM), MSL Level 1 moisture sensitivity, and halogen-free RoHS-compliant construction per JESD 201 Class 2 whisker test.
Technical Context
This bidirectional TVS operates symmetrically across both polarities, with identical electrical characteristics in forward and reverse directions. Its silicon avalanche structure enables sub-nanosecond response to ESD and lightning-induced surges, while low incremental surge resistance ensures stable clamping under repetitive 0.01 % duty cycle pulses.
The device is rated for 150 °C maximum junction temperature and derates linearly above 25 °C ambient, delivering 5.0 W power dissipation at case temperature (TM = 50 °C) and 1.0 W at TA = 25 °C on minimum recommended pad layout. Thermal resistance junction-to-ambient is 125 °C/W.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 110 V - maximum continuous reverse stand-off voltage before significant conduction begins |
| VBR min/max | 124 V / 133 V at 1 mA - tight ±3.5 % tolerance ensures predictable turn-on across production lots |
| VC @ IPPM | ≤174 V at 3.45 A - clamping voltage defines worst-case overvoltage seen by protected circuitry |
| PPPM | 600 W (10/1000 μs waveform) - peak surge energy handling capacity for transient immunity compliance |
| ID @ VWM | ≤0.5 μA - ultra-low leakage preserves signal integrity and minimizes standby power loss |
| TJ max | 150 °C - enables reliable operation in high-temperature industrial environments |
| Package | SMB (DO-214AA) - surface-mount footprint compatible with automated assembly and IPC-7351B standard |
Pinout & Package
Two-terminal bidirectional device in SMB (DO-214AA) package; no polarity marking required. Matte tin-plated leads meet J-STD-002 and JESD 22-B102 solderability standards. Molding compound complies with UL 94 V-0.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode | Bidirectional surge path | Terminals are functionally symmetric; either terminal serves as input/output for transient suppression in AC or floating DC lines |
| Case | Thermal and mechanical interface | Exposed copper pad area (min. 5.0 mm × 5.0 mm) required for thermal management and mechanical anchoring |
Key Features
| Feature | Design Value |
|---|---|
| ±3.5 % VBR tolerance | Enables precise coordination with system overvoltage thresholds without margin stacking |
| 600 W peak pulse rating | Meets IEC 61000-4-5 Level 4 (4 kV line-to-line) surge immunity requirements |
| MSL Level 1 rating | Allows unlimited floor life and reflow at 260 °C peak without baking preconditioning |
| Halogen-free & RoHS | Complies with EU RoHS Directive 2011/65/EU and JEDEC J-STD-20E environmental mandates |
| Low clamping ratio (VC/VBR ≈ 1.39) | Minimizes let-through voltage stress on downstream ICs during fast-rising transients |
Applications
| Industrial Motor Drive Protection | Automotive Sensor Interface |
|---|---|
Use Scenario: Suppresses switching spikes from IGBT gate drivers and regenerative braking feedback in 24–48 V DC bus systems. IC Role / Device Role / Timing Role: Bidirectional TVS placed across motor phase terminals or DC link capacitors to clamp inductive kickback. Use Value: Prevents gate oxide damage to power MOSFETs by limiting transient voltage to ≤174 V during 3.45 A surge events. | Use Scenario: Shields LIN/CAN physical layer receivers and Hall-effect position sensors from load dump and jump-start transients. IC Role / Device Role / Timing Role: Placed at connector entry point to absorb 12 V automotive bus transients up to ISO 7637-2 Pulse 5a. Use Value: Maintains signal fidelity with <0.5 μA leakage at 110 V stand-off, avoiding false triggering in low-current sensor bias networks. |
| Telecom Power Feeding | Consumer Appliance Control Board |
Use Scenario: Protects PoE-powered Ethernet switch ports and remote PHY devices from induced surges on long cable runs. IC Role / Device Role / Timing Role: Bidirectional clamping element on data pair lines to limit common-mode transients without disrupting DC bias. Use Value: Symmetric VBR (124–133 V) ensures equal protection for positive/negative polarity surges on differential pairs. | Use Scenario: Safeguards microcontroller GPIOs and relay driver circuits in washing machine control boards exposed to relay coil flyback. IC Role / Device Role / Timing Role: Mounted directly at board edge connectors to shunt ESD and inductive energy before reaching logic-level components. Use Value: 125 °C/W RθJA allows thermal design margin on compact PCBs with limited copper area. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ110CA-E3/52 | Same VWM/VBR/PPPM specs; lead-free matte tin plating per J-STD-002, but not M3 whisker-tested | No difference in surge protection performance; lacks JESD 201 Class 2 whisker qualification for high-reliability industrial use | Select SMBJ110CD-M3/I when whisker resistance and extended temperature cycling reliability are required |
| P6SMB110CA | Identical SMB package and bidirectional 110 V rating; 600 W PPPM, but VBR tolerance ±5 % (vs. ±3.5 %) | Higher VBR variation increases risk of premature conduction or insufficient clamping margin in precision systems | Choose SMBJ110CD-M3/I where tighter VBR control is needed for coordinated protection schemes |
Compared with SMBJ110CA-E3/52 and P6SMB110CA, the SMBJ110CD-M3/I delivers superior process control via ±3.5 % VBR tolerance and guaranteed JESD 201 Class 2 whisker resistance - critical for long-life industrial deployments where field failure modes must be minimized.
Availability
SMBJ110CD-M3/I is available at Aetrix Electronics and suitable for industrial motor drives, automotive sensor interfaces, telecom power feeding, and consumer appliance control boards requiring stable component supply and full traceability.
Supply support for SMBJ110CD-M3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability and application-specific performance.
The SMBJ series was engineered for robust transient suppression in harsh environments - targeting industrial automation, transportation, and infrastructure systems where surge immunity and long-term stability are non-negotiable.
FAQ
What does the "CD" suffix indicate in SMBJ110CD-M3/I?
The "CD" suffix denotes a bidirectional configuration: SMBJ110CD-M3/I provides symmetrical transient suppression for both polarities, unlike unidirectional "D" variants. This eliminates need for polarity-aware placement and supports AC-coupled or floating DC lines. Electrical characteristics including VBR, VC, and IPPM apply identically in either direction - confirmed in Vishay document 87606, Section "DEVICES FOR BIDIRECTIONAL APPLICATIONS".
Is SMBJ110CD-M3/I suitable for IEC 61000-4-5 testing?
Yes, SMBJ110CD-M3/I is rated for 600 W peak pulse power with a 10/1000 μs waveform, meeting IEC 61000-4-5 Level 4 (4 kV line-to-line) surge immunity when properly mounted on minimum recommended pad layout. Its 174 V clamping voltage at 3.45 A ensures protected circuits remain below safe operating limits during standardized surge events - verified in Vishay's primary characteristics table and Fig. 1 pulse power curve.
What is the meaning of the "M3" suffix in SMBJ110CD-M3/I?
The "M3" suffix indicates halogen-free, RoHS-compliant construction with matte tin-plated leads qualified to JESD 201 Class 2 for whisker resistance. It also meets MSL Level 1 per J-STD-020, allowing reflow at 260 °C peak without pre-baking. This makes SMBJ110CD-M3/I appropriate for high-reliability industrial and automotive applications where long-term intermetallic growth must be mitigated.
How does SMBJ110CD-M3/I differ from unidirectional SMBJ110D-M3/I?
SMBJ110CD-M3/I is bidirectional with no cathode band and identical behavior in both directions, whereas SMBJ110D-M3/I is unidirectional with a cathode band and conducts only in reverse bias. The CD version has same VWM (110 V) and PPPM (600 W), but its VBR range (124–133 V) applies to both polarities - enabling use in AC signal paths or differential bus protection where polarity reversal may occur.
What thermal derating applies to SMBJ110CD-M3/I at elevated ambient temperatures?
SMBJ110CD-M3/I derates linearly above 25 °C ambient: power dissipation drops from 1.0 W at TA = 25 °C to zero at TA = 150 °C, per Vishay Fig. 5. On minimum recommended pad layout, it sustains 5.0 W at TM = 50 °C case temperature. RθJA is 125 °C/W, so 1.0 W dissipation yields ~125 °C junction rise - requiring careful PCB copper area planning to stay within 150 °C TJ max.
SMBJ110CD-M3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 110V
- Voltage - Breakdown (Min):
- 124V
- Voltage - Clamping (Max) @ Ipp:
- 174V
- Current - Peak Pulse (10/1000µs):
- 3.45A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ110CD-M3/I FAQ
1.How can I place an order for SMBJ110CD-M3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ110CD-M3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ110CD-M3/I reliable?
The price and inventory of SMBJ110CD-M3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ110CD-M3/I is usually 5 days.
3.What payment methods are accepted for SMBJ110CD-M3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ110CD-M3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ110CD-M3/I?
SMBJ110CD-M3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ110CD-M3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ110CD-M3/I?
For technical support, including SMBJ110CD-M3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ110CD-M3/I requirements.
6.How does Aetrix verify that SMBJ110CD-M3/I is sourced from the original manufacturer or authorized distributors?
All SMBJ110CD-M3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ110CD-M3/I meets industry standards.
7.What is the process for return or replacement of SMBJ110CD-M3/I?
All SMBJ110CD-M3/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ110CD-M3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ110CD-M3/I part is unused and in its original packaging.
Return procedure for SMBJ110CD-M3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ110CD-M3/I Tags
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ESD9B5.0ST5G
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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