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Vishay General Semiconductor - Diodes Division SMBJ120AHE3_A/I

Part No.:
SMBJ120AHE3_A/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSMBJ120AHE3_A/I.pdf
Description:
TVS DIODE 120VWM 193VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,826

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Product details

Overview

SMBJ120AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 120 V standoff voltage (VWM), 133–147 V breakdown range (VBR at 1 mA), 193 V maximum clamping voltage (VC) at 3.1 A peak pulse current, and 600 W peak pulse power rating per 10/1000 µs waveform - deployed in industrial motor drives, automotive ECUs, and telecom power supplies.

For engineers reviewing the SMBJ120AHE3_A/I datasheet, SMBJ120AHE3_A/I pinout, SMBJ120AHE3_A/I application, or SMBJ120AHE3_A/I equivalent, this page delivers verified electrical specs, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), junction temperature limit (+150 °C), and RoHS-compliant packaging details to support ESD/surge protection design-in and BOM validation.

Technical Context

This unidirectional TVS diode operates as a voltage-clamped shunt protector: under normal conditions it presents high impedance (<1 µA leakage at 120 V), then rapidly avalanches below 147 V to clamp transients. Its glass-passivated junction ensures stable breakdown behavior and low incremental surge resistance.

Designed for automated SMT assembly on standard PCB pads (0.2" × 0.2"), it meets J-STD-020 MSL Level 1, supports 260 °C lead-free reflow, and is qualified to AEC-Q101 for automotive-grade reliability - with cathode band marking for polarity identification.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 120 V - Maximum continuous reverse operating voltage before conduction begins; sets upper limit for protected line voltage.
VBR (min/max) 133 V / 147 V at 1 mA - Confirmed breakdown range defining turn-on threshold; ensures reliable triggering above system nominal voltage.
VC @ IPPM 193 V at 3.1 A - Clamped voltage during 10/1000 µs surge; determines maximum stress imposed on downstream ICs or MOSFETs.
PPPM 600 W - Peak pulse power handling capability; defines survivability against lightning-induced or inductive-switching transients.
RθJA 100 °C/W - Junction-to-ambient thermal resistance on standard 5 mm × 5 mm copper pads; informs derating requirements above 25 °C ambient.
TJ max. +150 °C - Maximum allowable junction temperature; enables operation in under-hood automotive or high-temperature industrial enclosures.
AEC-Q101 Qualified - Validated for automotive electronics per stress test standard; supports use in engine control units and ADAS power domains.

Pinout & Package

Package: SMB (DO-214AA), surface-mount, molded plastic case with matte tin-plated leads. Cathode identified by black band on body end.

Pin/Terminal Circuit Role Design Meaning
Anode Low-side connection point Connected to ground or return path; completes clamping loop when transient exceeds VBR.
Cathode High-side connection point Connected to protected line (e.g., 12 V rail); avalanche conduction occurs from cathode to anode during overvoltage.

Key Features

Feature Design Value
600 W peak pulse power (10/1000 µs) Enables suppression of high-energy transients from relay switching or load dump without failure.
193 V clamping voltage at 3.1 A Limits voltage overshoot on 120 V systems to safe levels for 150 V-rated MOSFETs and controllers.
AEC-Q101 qualification Validates reliability for automotive applications including powertrain and body electronics modules.
MSL Level 1, 260 °C reflow compatible Supports single-pass lead-free assembly without moisture-related popcorn failure or delamination.
Glass passivated junction Ensures stable VBR tolerance and long-term parameter consistency across temperature and life cycles.

Applications

Industrial Motor Drives Automotive Engine Control Units

Use Scenario: Protection of gate drivers and MCU power rails against inductive kickback from IGBTs and solenoids.

IC Role / Device Role / Timing Role: Unidirectional shunt TVS placed between 12 V supply and ground near power stage.

Use Value: Clamps 193 V surges to prevent latch-up or oxide breakdown in 150 V-rated gate drivers and microcontrollers.

Use Scenario: Safeguarding 12 V battery-supplied sensors and communication interfaces (LIN/CAN PHY) in engine bays.

IC Role / Device Role / Timing Role: Primary overvoltage clamp on main power input to ECU module.

Use Value: Withstands load dump pulses up to ISO 7637-2 Pulse 5a while maintaining <1 µA leakage at 120 V standby.

Telecom Power Supplies Renewable Energy Inverters

Use Scenario: Input-stage surge protection for AC/DC front-end converters exposed to lightning-induced surges on outdoor lines.

IC Role / Device Role / Timing Role: First-line TVS on DC bus prior to bulk capacitor and PFC controller.

Use Value: 600 W rating absorbs 10/1000 µs transients without degradation; RθJA = 100 °C/W allows thermal design on standard FR4.

Use Scenario: DC-link protection in solar string inverters subjected to grid-switching transients and PV array arcing events.

IC Role / Device Role / Timing Role: Parallel-mounted TVS on 120 V DC bus feeding MPPT controller and isolation stage.

Use Value: AEC-Q101 qualification ensures reliability under extended thermal cycling (−40 °C to +125 °C ambient).

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ120AHM3_A/I Halogen-free, RoHS-compliant, AEC-Q101 qualified - identical electrical specs and package. No functional difference; selected where halogen-free material compliance is mandated (e.g., EU automotive Tier 1). Direct material substitution when halogen-free requirement applies; same layout and thermal performance.
SMCJ120AHE3_A/I Same VWM/VBR/VC, but in larger SMC (DO-214AB) package with 1500 W PPPM and lower RθJA (50 °C/W). Higher power handling and better thermal dissipation; requires larger PCB footprint and different pad layout. Choose when system-level surge tests exceed 600 W or ambient temperatures exceed 85 °C with sustained duty.

Compared with SMBJ120AHE3_A/I, SMBJ120AHM3_A/I offers identical protection performance with halogen-free construction, while SMCJ120AHE3_A/I provides higher surge margin and thermal headroom at the cost of increased board area - enabling trade-offs between footprint, power rating, and material compliance.

Availability

SMBJ120AHE3_A/I is available at Aetrix Electronics and suitable for industrial motor drives, automotive engine control units, and telecom power supplies requiring stable component supply with AEC-Q101 assurance and RoHS compliance.

Supply support for SMBJ120AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability and application-specific performance.

The SMBJ series is engineered for high-reliability transient suppression in harsh environments - targeting automotive, industrial, and telecom infrastructure where consistent clamping and long-term stability are critical.

FAQ

What is the maximum clamping voltage of SMBJ120AHE3_A/I under a 10/1000 µs surge?

The SMBJ120AHE3_A/I has a maximum clamping voltage (VC) of 193 V when subjected to its rated peak pulse current of 3.1 A using the standardized 10/1000 µs waveform. This value is measured per Figure 1 in Vishay document 88392 and defines the upper voltage limit imposed on protected circuitry during transient events. The SMBJ120AHE3_A/I maintains this clamping performance across its full operating temperature range (−55 °C to +150 °C).

Is SMBJ120AHE3_A/I qualified for automotive applications?

Yes, SMBJ120AHE3_A/I is AEC-Q101 qualified, as confirmed in the Vishay datasheet revision 09-Jan-2024 (document 88392), Section "MECHANICAL DATA". This qualification validates its suitability for automotive powertrain, chassis, and body electronics where robustness against thermal cycling, humidity, and mechanical shock is required. The "HE3" suffix explicitly denotes AEC-Q101 compliance, distinguishing it from commercial-grade variants.

What is the standoff voltage (VWM) and why does it matter for SMBJ120AHE3_A/I?

The standoff voltage (VWM) of SMBJ120AHE3_A/I is 120 V - the maximum DC or RMS voltage the device can withstand continuously without significant leakage current (<1 µA). This parameter ensures the SMBJ120AHE3_A/I remains non-conductive during normal operation while allowing precise matching to system bus voltages (e.g., 120 V DC rails), preventing false triggering and minimizing power loss.

Does SMBJ120AHE3_A/I have a defined thermal resistance, and how is it measured?

Yes, SMBJ120AHE3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W, measured with the device mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per JEDEC standards. This value is critical for thermal derating calculations: at 85 °C ambient, the SMBJ120AHE3_A/I must be operated below ~3.2 W average power to maintain TJ ≤ 150 °C. The SMBJ120AHE3_A/I's RθJA assumes standard FR4 PCB layout with no additional heatsinking.

How does the SMBJ120AHE3_A/I differ from bidirectional TVS diodes like SMBJ120CA?

The SMBJ120AHE3_A/I is unidirectional and functions only in reverse-bias mode - conducting during positive transients on the cathode side relative to anode. In contrast, SMBJ120CA is bidirectional and clamps transients of either polarity, making it suitable for AC lines or differential signal protection. The SMBJ120AHE3_A/I offers lower leakage at VWM and is preferred for DC power rail protection where polarity is fixed and forward conduction must be avoided.

SMBJ120AHE3_A/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
120V
Voltage - Breakdown (Min):
133V
Voltage - Clamping (Max) @ Ipp:
193V
Current - Peak Pulse (10/1000µs):
3.1A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBJ)

SMBJ120AHE3_A/I FAQ

1.How can I place an order for SMBJ120AHE3_A/I through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBJ120AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBJ120AHE3_A/I reliable?

The price and inventory of SMBJ120AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ120AHE3_A/I is usually 5 days.

3.What payment methods are accepted for SMBJ120AHE3_A/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ120AHE3_A/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBJ120AHE3_A/I?

SMBJ120AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBJ120AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBJ120AHE3_A/I?

For technical support, including SMBJ120AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ120AHE3_A/I requirements.

6.How does Aetrix verify that SMBJ120AHE3_A/I is sourced from the original manufacturer or authorized distributors?

All SMBJ120AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ120AHE3_A/I meets industry standards.

7.What is the process for return or replacement of SMBJ120AHE3_A/I?

All SMBJ120AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ120AHE3_A/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBJ120AHE3_A/I part is unused and in its original packaging.

Return procedure for SMBJ120AHE3_A/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBJ120AHE3_A/I Tags

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  • SMBJ120AHE3_A/I Datasheet
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  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMBJ120AHE3_A/I
  • Buy SMBJ120AHE3_A/I
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