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Vishay General Semiconductor - Diodes Division SMBJ188AHE3_A/I
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- Part No.:
- SMBJ188AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ188AHE3_A/I.pdf
- Description:
- TVS DIODE 188VWM 328VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:8,310
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Product details
Overview
SMBJ188AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 188 V stand-off voltage (VWM), 209–231 V breakdown voltage (VBR) at 1 mA, 328 V maximum clamping voltage (VC) at 2.0 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform.
For engineers reviewing the SMBJ188AHE3_A/I datasheet, SMBJ188AHE3_A/I pinout, SMBJ188AHE3_A/I application, or SMBJ188AHE3_A/I equivalent, this device serves as a high-voltage clamping solution for industrial motor drives, telecom power supplies, and automotive ECUs where sustained surge immunity up to 150 °C junction temperature and AEC-Q101 qualification are required.
Technical Context
This TVS diode operates as a unidirectional avalanche clamp, leveraging glass-passivated silicon junction technology to deliver sub-nanosecond response time and low incremental surge resistance. Its thermal design supports 100 °C/W junction-to-ambient resistance on standard 0.2" × 0.2" copper pads, enabling reliable operation under repetitive transients at 0.01% duty cycle.
The SMBJ188AHE3_A/I is AEC-Q101 qualified and RoHS-compliant, with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Polarity is marked by a cathode band; it is not rated for bidirectional use and exhibits no reverse conduction below VWM.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 188 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC rail margin for 200 V nominal systems. |
| VBR (min/max) | 209 V / 231 V at 1 mA - Confirmed breakdown range ensures predictable turn-on across production lots and temperature. |
| VC @ IPPM | 328 V at 2.0 A - Clamping voltage limits downstream component stress during 10/1000 µs surges in high-voltage power stages. |
| PPPM | 600 W - Peak pulse power handling capability with 10/1000 µs waveform enables protection against lightning-induced transients per IEC 61000-4-5. |
| TJ max. | +150 °C - Maximum junction temperature rating supports operation in under-hood automotive and industrial environments. |
| RθJA | 100 °C/W - Thermal resistance value guides PCB copper pad sizing for thermal management without heatsinks. |
| IFSM | 100 A - Non-repetitive forward surge rating validates compatibility with high-energy inductive switch-off events. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with molded UL 94 V-0 compound and cathode band marking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / surge return path | Connected to system ground or low-side reference; carries full surge current during clamping. |
| Cathode | Protected line connection / high-side terminal | Connected to the line being protected (e.g., +200 V rail); voltage referenced to anode during clamping. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing-enables use in engine control modules and ADAS power domains. |
| 600 W peak pulse power (10/1000 µs) | Supports IEC 61000-4-5 Level 4 surge immunity (4 kV line-earth) when properly mounted on 5 mm × 5 mm copper pads. |
| Glass passivated junction | Ensures stable VBR tolerance and long-term leakage stability (<1 µA at VWM) across humidity and thermal stress. |
| MSL Level 1 (260 °C peak reflow) | Enables single-pass lead-free reflow assembly without moisture-related delamination or parametric shift. |
| Matte tin plating, JESD 201 Class 2 whisker resistant | Eliminates risk of tin whisker growth in high-reliability applications such as telecom base station power supplies. |
Applications
| Industrial Motor Drives | Telecom Power Supplies |
|---|---|
|
Use Scenario: Protection of 200 V DC bus against switching transients from IGBT gate drivers and regenerative braking. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between DC+ and chassis ground to limit voltage overshoot during fast dV/dt events. Use Value: Clamps 10/1000 µs surges to ≤328 V, preventing damage to 250 V-rated electrolytic capacitors and gate drivers. |
Use Scenario: Input-stage surge suppression on -48 V DC telecom rectifier outputs exposed to lightning-induced surges. IC Role / Device Role / Timing Role: High-voltage unidirectional TVS connected cathode-to-line, anode-to-ground to absorb common-mode transients. Use Value: Withstands 600 W pulses while maintaining <1 µA leakage at -48 V, avoiding standby power loss in always-on systems. |
| Automotive Engine Control Units | Renewable Energy Inverters |
|
Use Scenario: Protection of 12 V auxiliary circuits powered from boosted 200 V battery packs in 48 V mild-hybrid architectures. IC Role / Device Role / Timing Role: Clamp on post-boost DC/DC converter output to suppress load-dump transients and alternator ripple spikes. Use Value: AEC-Q101 qualification and 150 °C operation ensure compliance with ISO 7637-2 Pulse 5a/b requirements in under-hood environments. |
Use Scenario: DC-link overvoltage protection in solar string inverters where PV arrays generate up to 1500 V open-circuit voltage. IC Role / Device Role / Timing Role: Used in series-stacked configurations or as secondary clamp on intermediate DC rails (e.g., 200–400 V stages). Use Value: 328 V clamping voltage provides >20% margin above 250 V nominal rail, reducing failure risk during grid fault recovery. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ188AHM3_A/I | Halogen-free, RoHS-compliant, AEC-Q101 qualified - identical electrical specs but different material composition. | No functional difference; selected when halogen-free compliance is mandated by OEM environmental policy. | Direct substitution where halogen-free materials are required; same footprint, thermal, and electrical behavior. |
| SMCJ188AHE3_A/I | Same VWM/VBR/VC, but SMC (DO-214AB) package - 27% larger footprint, 1500 W PPPM, lower RθJA (50 °C/W). | Used where higher surge energy absorption (>600 W) or improved thermal dissipation is needed without changing circuit topology. | Choose when system-level surge testing exceeds 600 W or ambient temperatures exceed 105 °C with limited PCB copper area. |
Compared with SMBJ188AHE3_A/I, the HM3 variant offers identical performance with halogen-free construction, while the SMCJ188AHE3_A/I delivers 2.5× higher surge power in a larger package-enabling design flexibility for evolving IEC/ISO test margins without altering protection strategy.
Availability
SMBJ188AHE3_A/I is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and automotive engine control units requiring stable component supply with AEC-Q101 traceability and RoHS compliance.
Supply support for SMBJ188AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific optimization.
The SMBJ series is part of Vishay's TRANSZORB® TVS platform, engineered for high-energy transient suppression in automotive, industrial, and telecom infrastructure where consistent clamping and AEC-Q101 validation are mandatory.
FAQ
What is the maximum clamping voltage of SMBJ188AHE3_A/I at its rated peak pulse current?
The SMBJ188AHE3_A/I has a maximum clamping voltage (VC) of 328 V at 2.0 A peak pulse current (IPPM) under the standard 10/1000 µs waveform. This value is measured per Figure 1 in Vishay document 88392 and defines the upper voltage limit imposed on protected circuitry during surge events. The SMBJ188AHE3_A/I maintains this clamping performance across its full operating temperature range (-55 °C to +150 °C).
Is SMBJ188AHE3_A/I suitable for bidirectional transient protection?
No, SMBJ188AHE3_A/I is a unidirectional TVS diode and is not rated for bidirectional operation. Its electrical characteristics-including breakdown and clamping-are specified only for reverse-biased conditions. For bidirectional protection, Vishay recommends the SMBJ188CA variant. Using SMBJ188AHE3_A/I in bidirectional applications may result in forward conduction and failure during negative transients.
Does SMBJ188AHE3_A/I meet automotive qualification standards?
Yes, SMBJ188AHE3_A/I is AEC-Q101 qualified, as confirmed in the Vishay datasheet (document 88392, page 3, footnote 1). This qualification covers stress tests including HTGB, H3TRB, TCT, and mechanical shock, validating its suitability for automotive powertrain and body electronics. The "HE3" suffix explicitly denotes AEC-Q101 compliance in Vishay's ordering nomenclature.
What is the thermal resistance of SMBJ188AHE3_A/I, and how does it affect PCB layout?
The SMBJ188AHE3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value assumes minimum recommended pad layout per Vishay's package drawing. To maintain TJ ≤ 150 °C under worst-case 5.0 W steady-state dissipation, designers must allocate ≥250 mm² total copper area per terminal or add thermal vias-otherwise, derating is required.
How does the leakage current of SMBJ188AHE3_A/I compare at its 188 V stand-off voltage?
At VWM = 188 V and TA = 25 °C, the SMBJ188AHE3_A/I exhibits a maximum reverse leakage current (ID) of 1.0 µA, as specified in the Electrical Characteristics table (page 2 of document 88392). This ultra-low leakage ensures minimal power loss in high-impedance monitoring circuits and preserves efficiency in always-on telecom or automotive subsystems powered from 188 V rails.
SMBJ188AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 188V
- Voltage - Breakdown (Min):
- 209V
- Voltage - Clamping (Max) @ Ipp:
- 328V
- Current - Peak Pulse (10/1000µs):
- 2A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ188AHE3_A/I FAQ
1.How can I place an order for SMBJ188AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ188AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ188AHE3_A/I reliable?
The price and inventory of SMBJ188AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ188AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SMBJ188AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ188AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ188AHE3_A/I?
SMBJ188AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ188AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ188AHE3_A/I?
For technical support, including SMBJ188AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ188AHE3_A/I requirements.
6.How does Aetrix verify that SMBJ188AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SMBJ188AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ188AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SMBJ188AHE3_A/I?
All SMBJ188AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ188AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ188AHE3_A/I part is unused and in its original packaging.
Return procedure for SMBJ188AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ188AHE3_A/I Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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