Vishay General Semiconductor - Diodes Division SMBJ18D-M3/H
- Part No.:
- SMBJ18D-M3/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ18D-M3/H.pdf
- Description:
- TVS DIODE 18VWM 28.8VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:7,480
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Product details
Overview
SMBJ18D-M3/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, with 18 V stand-off voltage (VWM), 20.3–21.8 V breakdown voltage (VBR) at 1 mA, 28.8 V clamping voltage (VC) at 20.8 A peak pulse current, and 600 W peak pulse power rating per 10/1000 μs waveform - deployed for overvoltage protection of MOSFETs, ICs, and sensor signal lines in industrial power supplies and telecom interfaces.
For engineers reviewing the SMBJ18D-M3/H datasheet, SMBJ18D-M3/H pinout, SMBJ18D-M3/H application, or SMBJ18D-M3/H equivalent, this page delivers verified electrical parameters, thermal derating behavior, M3-grade halogen-free RoHS compliance, J-STD-020 MSL Level 1 moisture sensitivity, and bidirectional alternative options for ESD and inductive switching surge suppression.
Technical Context
This TVS diode operates as a unidirectional clamping device: reverse-biased during normal operation (blocking up to 18 V), then avalanche-conducting within nanoseconds when transient voltage exceeds its 20.3–21.8 V breakdown threshold. Its low 20 Ω typical junction-to-mount thermal resistance (RθJM) supports reliable energy dissipation under repetitive surge conditions when mounted on minimum recommended copper pad layout.
Designed per ANSI/IEEE C62.35 standards, SMBJ18D-M3/H delivers 0.5 μA max reverse leakage at VWM and maintains stable clamping performance across -55 °C to +150 °C junction temperature range, with derated peak pulse power above 25 °C ambient per Fig. 2 in the datasheet.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 18 V - maximum continuous reverse operating voltage before conduction begins |
| VBR min/max | 20.3 V / 21.8 V at 1 mA - tight ±3.5 % tolerance ensures predictable turn-on across production lots |
| VC @ IPPM | 28.8 V at 20.8 A - clamping voltage limits downstream circuit stress during 10/1000 μs transients |
| PPPM | 600 W - peak pulse power handling capability with 0.01 % duty cycle, enabling robust surge immunity |
| ID @ VWM | 0.5 μA max - ultra-low leakage preserves signal integrity and battery life in always-on circuits |
| TJ max | +150 °C - high junction temperature rating supports operation in enclosed industrial enclosures |
| RθJA | 125 °C/W - thermal resistance to ambient on minimum pad layout informs PCB copper area requirements |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, halogen-free, RoHS-compliant, M3-grade matte tin-plated terminals, MSL Level 1 (peak reflow 260 °C), cathode indicated by band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential side (e.g., ground or return path) in unidirectional configuration |
| Cathode (banded end) | Reverse-blocking terminal | Connected to protected line (e.g., 18 V rail or signal input); conducts during overvoltage events |
Key Features
| Feature | Design Value |
|---|---|
| ±3.5 % VBR tolerance | Enables precise coordination with system overvoltage thresholds without margin stacking |
| 600 W PPPM (10/1000 μs) | Withstands IEC 61000-4-5 Level 4 surges (4 kV line-earth) with single-device implementation |
| MSL Level 1 rating | Eliminates bake-out requirement prior to SMT reflow, reducing manufacturing cost and risk |
| 0.5 μA ID @ VWM | Minimizes standby current draw in battery-powered sensor nodes and IoT edge devices |
| Low RθJM = 20 °C/W | Supports >1000 surge cycles at rated power when thermally anchored to PCB copper |
Applications
| Industrial Motor Drive Control | Telecom Line Interface Protection |
|---|---|
Use Scenario: Protecting gate drivers and feedback sensing circuits from inductive kickback during IGBT/MOSFET switching in variable-frequency drives. IC Role / Device Role / Timing Role: Unidirectional TVS placed across DC bus or gate-source terminals to clamp voltage spikes before they exceed MOSFET VDS or driver absolute maximum ratings. Use Value: Prevents cumulative degradation of power semiconductors and eliminates need for snubber RC networks in compact drive modules. | Use Scenario: Safeguarding Ethernet PHY transceivers and line-card ASICs against lightning-induced surges on RJ45 ports in access switches and base stations. IC Role / Device Role / Timing Role: Primary-level TVS on differential pairs (e.g., TX+/TX−), coordinated with common-mode chokes and secondary GDTs per GR-1089-CORE. Use Value: Limits clamped voltage to <30 V, keeping PHY inputs within safe operating area during 10/700 μs telecom surges. |
| Automotive Body Control Module (BCM) | Consumer Appliance Power Supply Input |
Use Scenario: Suppressing load-dump transients on 12 V supply rails feeding microcontrollers and CAN transceivers in door modules and lighting controllers. IC Role / Device Role / Timing Role: Unidirectional TVS connected between VBAT and ground, sized to absorb ISO 7637-2 Pulse 5a (35 V, 400 ms) energy via thermal mass of PCB copper. Use Value: Enables direct integration without external heat sinking while maintaining AEC-Q200 alignment via M3-grade construction. | Use Scenario: Protecting AC-DC adapter primary-side controllers and optocoupler feedback paths from mains-borne surges in washing machines and HVAC controls. IC Role / Device Role / Timing Role: Secondary-side TVS on isolated 12/24 V DC output rails, guarding against cross-coupling from primary-side MOV failure or transformer insulation breakdown. Use Value: Maintains functional safety by preventing latch-up or permanent damage to low-voltage logic despite upstream component faults. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ18A-M3/H | Same VWM (18 V), but ±5 % VBR tolerance (20.0–22.2 V) vs. ±3.5 % for SMBJ18D-M3/H | Lower VBR consistency reduces coordination margin needed with downstream overvoltage detectors | Select SMBJ18D-M3/H when tighter clamping predictability is required for safety-critical or high-reliability systems |
| SMBJ18CD-M3/H | Bidirectional variant: symmetric VBR (20.3–21.8 V) in both polarities; no polarity marking | Required for AC-coupled or floating signal lines where reverse polarity transients occur (e.g., RS-485, audio jacks) | Choose SMBJ18CD-M3/H only if bidirectional protection is mandated; SMBJ18D-M3/H is optimal for DC rails with defined ground reference |
Compared with SMBJ18A-M3/H, SMBJ18D-M3/H offers superior VBR uniformity for precision clamping; compared with SMBJ18CD-M3/H, it provides lower capacitance and avoids unnecessary bidirectional conduction in unidirectional DC systems - making SMBJ18D-M3/H the preferred choice for grounded 18 V supply rail protection.
Availability
SMBJ18D-M3/H is available at Aetrix Electronics and suitable for industrial motor control, telecom infrastructure, automotive body electronics, and consumer appliance power supply designs requiring stable component supply, long-term lifecycle support, and consistent surge immunity performance.
Supply support for SMBJ18D-M3/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, thermal performance, and automotive-grade qualification.
The SMBJ series is engineered for high-energy transient suppression in space-constrained surface-mount applications, targeting industrial automation, telecom infrastructure, and automotive subsystems where robustness against ESD, lightning, and inductive switching is mission-critical.
FAQ
What is the breakdown voltage range of SMBJ18D-M3/H?
The SMBJ18D-M3/H has a guaranteed breakdown voltage (VBR) range of 20.3 V to 21.8 V at 1 mA test current, reflecting its ±3.5 % tolerance. This tight specification ensures consistent clamping behavior across production units and simplifies coordination with system-level overvoltage protection thresholds in designs using SMBJ18D-M3/H.
Does SMBJ18D-M3/H meet automotive qualification standards?
SMBJ18D-M3/H is not AEC-Q200 qualified out-of-the-box, but its M3 suffix confirms compliance with JESD 201 Class 2 whisker resistance and J-STD-020 MSL Level 1 - features commonly leveraged in automotive body electronics. For full AEC-Q200 compliance, engineers must verify qualification status per Vishay's automotive-grade part numbers, as SMBJ18D-M3/H itself is industrial-grade.
How does SMBJ18D-M3/H perform under elevated ambient temperatures?
SMBJ18D-M3/H exhibits linear thermal derating above 25 °C ambient: its peak pulse power drops to ~50 % at 75 °C and ~25 % at 125 °C, per Figure 2 in the datasheet. This behavior requires PCB layout with adequate copper area (minimum 5.0 mm × 5.0 mm pad) to maintain clamping performance during sustained surge events in hot environments.
Can SMBJ18D-M3/H be used in bidirectional signal lines like RS-485?
No - SMBJ18D-M3/H is unidirectional and will conduct only when cathode voltage exceeds anode by ≥20.3 V. For bidirectional lines such as RS-485, the SMBJ18CD-M3/H variant must be used instead, as it provides symmetrical clamping in both polarities. Using SMBJ18D-M3/H on AC-coupled or floating signals risks forward conduction and potential damage.
What is the maximum clamping voltage of SMBJ18D-M3/H during a surge event?
The SMBJ18D-M3/H clamps to a maximum of 28.8 V when subjected to its rated 20.8 A peak pulse current (IPPM) under the standard 10/1000 μs waveform. This VC value defines the upper voltage limit imposed on protected circuitry during surge events and is critical for ensuring downstream components remain within their absolute maximum ratings.
SMBJ18D-M3/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 18V
- Voltage - Breakdown (Min):
- 20.3V
- Voltage - Clamping (Max) @ Ipp:
- 28.8V
- Current - Peak Pulse (10/1000µs):
- 20.8A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ18D-M3/H FAQ
1.How can I place an order for SMBJ18D-M3/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ18D-M3/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ18D-M3/H reliable?
The price and inventory of SMBJ18D-M3/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ18D-M3/H is usually 5 days.
3.What payment methods are accepted for SMBJ18D-M3/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ18D-M3/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ18D-M3/H?
SMBJ18D-M3/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ18D-M3/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ18D-M3/H?
For technical support, including SMBJ18D-M3/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ18D-M3/H requirements.
6.How does Aetrix verify that SMBJ18D-M3/H is sourced from the original manufacturer or authorized distributors?
All SMBJ18D-M3/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ18D-M3/H meets industry standards.
7.What is the process for return or replacement of SMBJ18D-M3/H?
All SMBJ18D-M3/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ18D-M3/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ18D-M3/H part is unused and in its original packaging.
Return procedure for SMBJ18D-M3/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ18D-M3/H Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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