Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Taiwan Semiconductor Corporation SMBJ26H

Part No.:
SMBJ26H
Manufacturer:
Taiwan Semiconductor Corporation
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSMBJ26H.pdf
Description:
600W, 32.1V, 10%, UNIDIRECTIONAL
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,263

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMBJ26H from Taiwan Semiconductor is a unidirectional 600W surface-mount transient voltage suppressor (TVS) diode in DO-214AA (SMB) package, with 26V working stand-off voltage (VWM), 28.9–35.3V breakdown voltage (VBR @ 1mA), and 46.6V maximum clamping voltage (VC @ 13.5A). It delivers fast response (<1.0ps), low leakage (<1μA @ 26V), and AEC-Q101 qualification for automotive-grade surge protection.

For engineers reviewing the SMBJ26H datasheet, SMBJ26H pinout, SMBJ26H application, or SMBJ26H equivalent, key selection criteria include clamping performance under ISO 7637-2 Pulse 1/2a/2b/3a/3b transients, thermal derating above 25°C, unidirectional polarity marking, and compatibility with automated SMT placement on PCBs requiring robust ESD and load-dump immunity.

Technical Context

The SMBJ26H operates as a unidirectional avalanche diode, triggered when reverse voltage exceeds its VBR range (28.9–35.3V), diverting transient energy to ground while clamping the protected line to ≤46.6V at 13.5A peak impulse current (IPP). Its glass-passivated junction ensures stable breakdown and low leakage.

Designed for 10/1000µs waveform compliance, it supports non-repetitive peak power dissipation of 600W at 25°C, with thermal resistance RθJA = 55°C/W and RθJC = 10°C/W. Junction temperature range is –55°C to +150°C, and moisture sensitivity level is J-STD-020 Level 1.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 26 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC/AC signal margin.
VBR min/max 28.9 / 35.3 V @ 1 mA - Verified avalanche onset range; ensures reliable triggering across process variation and temperature.
VC @ IPP 46.6 V @ 13.5 A - Clamped voltage during 10/1000µs surge; determines maximum stress on downstream ICs.
PPK 600 W - Peak pulse power handling per single transient; enables protection against ISO 7637-2 Pulse 5a (load dump).
ID @ VWM <1 µA - Reverse leakage at rated stand-off; minimizes quiescent power loss and avoids false triggering.
Package DO-214AA (SMB) - Standardized SMT footprint (4.58 × 3.94 × 2.29 mm); compatible with JEDEC MS-012AC and automated reflow.

Pinout & Package

DO-214AA (SMB) package: cathode-banded unidirectional configuration; anode and cathode terminals are axially aligned along the body, with cathode band denoting terminal polarity. Matte tin-plated leads meet J-STD-002 solderability requirements.

Pin/Terminal Circuit Role Design Meaning
Anode (non-banded end) Input/Line side connection Connected to protected circuit node (e.g., power rail or signal line); carries surge current into device during clamping.
Cathode (banded end) Ground-reference terminal Connected to system ground or low-impedance return path; establishes reference for clamping action and defines unidirectional polarity.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive underhood and chassis applications per stress test requirements (HTOL, TC, UHAST, etc.).
Glass passivated junction Ensures stable VBR over lifetime and improved humidity resistance vs. epoxy-passivated alternatives.
Clamping ratio VC/VBR ≤1.62 (46.6V / 28.9V) - Low ratio indicates efficient energy diversion with minimal overvoltage exposure.
ISO 7637-2 compliance Meets Pulse 1 (inductive load disconnect), Pulse 2a/2b (switching transients), and Pulse 3a/3b (board-level EFT) immunity requirements.
Moisture sensitivity level 1 Zero bake requirement prior to reflow; supports standard SMT assembly without dry-pack or floor-life constraints.

Applications

Automotive Power Rail Protection Industrial Sensor Interface Protection

Use Scenario: 12V battery-fed ECUs exposed to load dump (ISO 7637-2 Pulse 5a) and alternator ripple.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between power input and ground to clamp surges before they reach LDOs or microcontrollers.

Use Value: Limits voltage excursion to ≤46.6V during 600W transients, preserving 3.3V/5V logic supply integrity and avoiding latch-up or gate oxide damage.

Use Scenario: 4–20mA current-loop sensors in factory automation subject to ESD and cable-induced transients.

IC Role / Device Role / Timing Role: TVS installed across sensor output terminals to shunt fast transients before reaching analog front-end amplifiers or ADC inputs.

Use Value: Sub-1ps response ensures clamping occurs before sensitive op-amps saturate; <1µA leakage prevents loop current error at 20mA full scale.

LED Driver Input Protection Automotive CAN Bus Node Protection

Use Scenario: Constant-current LED drivers powered from vehicle battery with high di/dt switching noise.

IC Role / Device Role / Timing Role: SMBJ26H placed at driver input to absorb inductive kickback from relay coils or motor drivers sharing same rail.

Use Value: 13.5A IPP rating handles repetitive 8.3ms half-sine surges up to 100A IFSM, preventing MOSFET gate oxide failure in driver ICs.

Use Scenario: CAN transceiver nodes in body control modules subjected to EFT bursts and coupling from adjacent harnesses.

IC Role / Device Role / Timing Role: Unidirectional TVS on CAN_H and CAN_L lines referenced to chassis ground to suppress common-mode transients.

Use Value: 26V VWM aligns with 12V automotive nominal rails; clamping at 46.6V keeps differential swing within ±40V absolute limit for ISO 11898-2 compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ26AH Narrower VBR range (28.9–31.9V) and lower VC (42.1V @ 14.9A); tighter tolerance improves predictability in precision clamping designs. Better suited for systems requiring tighter clamping voltage control and lower overshoot during fast transients. Select SMBJ26AH when VBR consistency and reduced VC are prioritized over cost; identical package and mounting.
SMAJ26A Lower PPK (400W), higher RθJA (70°C/W), and SMA package (smaller footprint, lower thermal mass). Acceptable for lower-energy transients (e.g., IEC 61000-4-2 ESD only), but insufficient for ISO 7637-2 Pulse 5a load dump. Choose SMAJ26A only for space-constrained consumer or industrial boards where 600W surge immunity is not required.

Compared with SMBJ26AH, the SMBJ26H offers broader VBR tolerance and slightly higher clamping voltage-beneficial for cost-sensitive automotive modules where margin accommodates process spread. Against SMAJ26A, SMBJ26H provides 50% higher surge power rating and superior thermal performance, making it mandatory for under-hood automotive applications.

Availability

SMBJ26H is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor interfaces, LED lighting drivers, and CAN bus node protection requiring stable component supply across extended temperature and high-reliability environments.

Supply support for SMBJ26H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated semiconductor manufacturer specializing in discrete power devices, TVS diodes, rectifiers, and MOSFETs, with global AEC-Q101 certification capabilities.

The SMBJH series was developed specifically for automotive-grade transient suppression, emphasizing AEC-Q101 reliability, ISO 7637-2 compliance, and robust SMT manufacturability in DO-214AA packaging.

FAQ

What is the maximum clamping voltage of the SMBJ26H under standard test conditions?

The SMBJ26H has a maximum clamping voltage (VC) of 46.6 V when subjected to a 10/1000 µs surge waveform at 13.5 A peak impulse current (IPP), measured per ANSI/IEEE C62.35. This value is guaranteed across the full operating temperature range and defines the upper voltage limit imposed on protected circuits during transient events.

Is the SMBJ26H suitable for bidirectional transient protection?

No, the SMBJ26H is a unidirectional TVS diode, indicated by the absence of "C" or "CA" suffix and confirmed by its single-polarity marking (cathode band). For bidirectional protection, use SMBJ26CH or SMBJ26CAH variants, which provide symmetrical clamping in both polarities and are explicitly rated for bipolar applications.

Does the SMBJ26H meet automotive qualification standards?

Yes, the SMBJ26H is AEC-Q101 qualified and meets ISO 7637-2 Pulse 1, 2a, 2b, 3a, and 3b requirements. It is rated for junction temperatures from –55°C to +150°C and packaged in moisture-sensitivity Level 1 DO-214AA (SMB) housing, making it suitable for under-hood and chassis-mounted automotive electronics.

What is the leakage current specification for SMBJ26H at its working voltage?

The SMBJ26H exhibits a maximum blocking leakage current (ID) of 1 µA when biased at its 26 V working stand-off voltage (VWM), tested at 25°C. This low leakage ensures minimal power loss in always-on automotive systems and avoids interference with precision analog or current-loop circuits.

How does the SMBJ26H compare to the SMBJ26AH in terms of electrical performance?

The SMBJ26AH features a tighter breakdown voltage range (28.9–31.9 V vs. 28.9–35.3 V) and lower clamping voltage (42.1 V vs. 46.6 V at rated IPP), resulting in more consistent and aggressive transient suppression. Both share identical DO-214AA packaging, AEC-Q101 qualification, and ISO 7637-2 compliance, but SMBJ26AH is preferred where clamping precision is critical.

SMBJ26H Specifications

Product attributes
Attribute value
Manufacturer:
Taiwan Semiconductor Corporation
Package/Case:
DO-214AA, SMB
Series:
SMBJH
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
26V
Voltage - Breakdown (Min):
28.9V
Voltage - Clamping (Max) @ Ipp:
46.6V
Current - Peak Pulse (10/1000µs):
13.5A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMB)

SMBJ26H FAQ

1.How can I place an order for SMBJ26H through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBJ26H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBJ26H reliable?

The price and inventory of SMBJ26H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ26H is usually 5 days.

3.What payment methods are accepted for SMBJ26H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ26H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBJ26H?

SMBJ26H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBJ26H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBJ26H?

For technical support, including SMBJ26H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ26H requirements.

6.How does Aetrix verify that SMBJ26H is sourced from the original manufacturer or authorized distributors?

All SMBJ26H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ26H meets industry standards.

7.What is the process for return or replacement of SMBJ26H?

All SMBJ26H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ26H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBJ26H part is unused and in its original packaging.

Return procedure for SMBJ26H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBJ26H Tags

  • SMBJ26H
  • SMBJ26H PDF
  • SMBJ26H Datasheet
  • SMBJ26H Specifications
  • SMBJ26H Images
  • Taiwan Semiconductor Corporation
  • Taiwan Semiconductor Corporation SMBJ26H
  • Buy SMBJ26H
  • SMBJ26H Price
  • SMBJ26H Distributor
  • SMBJ26H Supplier
  • SMBJ26H Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER