Vishay General Semiconductor - Diodes Division SMBJ28AHE3_B/I
- Part No.:
- SMBJ28AHE3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ28AHE3_B/I.pdf
- Description:
- 600W,28V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ28AHE3_B/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed for robust overvoltage protection of sensitive electronics. It features a 28 V stand-off voltage (VWM), 31.1–34.4 V breakdown voltage (VBR) at 1.0 mA test current, and clamps transients up to 45.4 V at 13.2 A peak pulse current (IPPM) under 10/1000 µs waveform - deployed on power rails and signal lines in industrial motor drives and automotive ECUs.
For engineers reviewing the SMBJ28AHE3_B/I datasheet, SMBJ28AHE3_B/I pinout, SMBJ28AHE3_B/I application, or SMBJ28AHE3_B/I equivalent, key selection criteria include its AEC-Q101 qualification, 600 W peak pulse power rating, low 0.098 %/°C VBR temperature coefficient, and compatibility with automated SMT assembly on 0.2" × 0.2" copper pads.
Technical Context
This unidirectional TVS diode operates as a clamping device in reverse-biased configuration, conducting only when transient voltage exceeds its breakdown threshold. Its glass-passivated junction ensures stable leakage performance (<1.0 µA at VWM) and fast response time (<1.0 ns), enabling effective suppression of ESD, lightning-induced surges, and inductive switching spikes.
The SMBJ28AHE3_B/I is rated for 100 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine), supports continuous power dissipation of 5.0 W at 50 °C ambient, and maintains operation across –55 °C to +150 °C junction temperature range - validated per J-STD-020 MSL Level 1 with 260 °C reflow peak.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 28 V - maximum continuous reverse operating voltage before clamping begins; defines safe DC/AC working margin |
| VBR (min/max) | 31.1 V / 34.4 V at 1.0 mA - precise breakdown window ensures predictable turn-on without premature conduction |
| VC @ IPPM | 45.4 V at 13.2 A - clamping voltage limits downstream IC stress during 10/1000 µs transients |
| PPPM | 600 W - peak pulse power handling capability under standardized surge waveform (duty cycle ≤ 0.01 %) |
| IPPM | 13.2 A - maximum non-repetitive surge current supported at VC, critical for IEC 61000-4-5 compliance |
| TJ max. | +150 °C - enables reliable operation in under-hood automotive and high-temperature industrial environments |
| Leakage ID | ≤1.0 µA at 28 V - minimal standby power loss and no interference with low-current sensor biasing |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102; polarity indicated by cathode band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry (reverse-biased in protection mode) | Connected to protected line (e.g., 24 V rail); conducts during overvoltage events to shunt energy to ground |
| Cathode | Forward current exit / reference terminal | Connected to system ground or lower-potential return path; establishes clamping reference point |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing - suitable for engine control and ADAS modules |
| 600 W peak pulse power | Withstands IEC 61000-4-5 Level 4 surges (4 kV line-to-ground) without degradation when mounted on 5 mm × 5 mm copper pads |
| Glass passivated junction | Ensures stable VBR and low leakage over lifetime - critical for long-term field reliability in industrial PLCs |
| MSL Level 1 moisture sensitivity | Allows unlimited floor life and standard reflow profile (peak 260 °C) without baking - simplifies manufacturing logistics |
| Low incremental surge resistance | Minimizes clamping voltage overshoot during fast-rising transients - improves protection margin for 3.3 V/5 V logic interfaces |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Protecting 24 V supply inputs in body control modules against load dump and alternator ripple. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between battery rail and DC-DC input stage. Use Value: Limits transient excursions to ≤45.4 V, preventing damage to downstream regulators rated for 40 V absolute max. |
Use Scenario: Shielding analog output lines (e.g., 4–20 mA current loop) from ESD and cable discharge events. IC Role / Device Role / Timing Role: Low-leakage (≤1.0 µA) TVS connected across signal and ground near connector entry. Use Value: Maintains signal integrity with negligible offset error while suppressing ±8 kV contact ESD per IEC 61000-4-2. |
| Telecom Line Card Surge Suppression | Motor Drive Gate Driver Protection |
|
Use Scenario: Safeguarding Ethernet PHY power pins (3.3 V) from induced surges on nearby AC mains traces. IC Role / Device Role / Timing Role: Fast-response (sub-ns) TVS placed adjacent to PHY IC, referenced to local ground plane. Use Value: Clamps 10/1000 µs surges to 45.4 V before voltage propagates into sensitive transceiver circuitry. |
Use Scenario: Preventing gate oxide failure in MOSFET drivers due to Miller-induced voltage spikes during switching. IC Role / Device Role / Timing Role: TVS installed between gate and source terminals of high-side driver FETs. Use Value: Absorbs >13 A transient currents without latch-up, preserving driver IC functionality during fault conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ28AHM3_B/I | Halogen-free, RoHS-compliant variant with identical electrical specs and AEC-Q101 qualification | No functional difference; selected where halogen-free materials are mandated by OEM environmental policy | Direct material substitution when halogen-free compliance is required; same footprint and thermal behavior |
| SMCJ28AHE3_A/I | Higher-power 1500 W version in larger SMC (DO-214AB) package; VWM = 28 V, VC = 45.7 V @ 33.0 A | Used where higher surge repetition rate or longer duration transients exceed SMBJ28AHE3_B/I's 600 W limit | Choose when system-level surge testing requires >600 W capability; requires PCB layout change due to larger package |
Compared with SMBJ28AHE3_B/I, the SMBJ28AHM3_B/I offers identical protection performance with halogen-free construction, while the SMCJ28AHE3_A/I delivers 2.5× higher pulse power in a physically larger package - enabling design flexibility for varying surge severity and environmental compliance requirements.
Availability
SMBJ28AHE3_B/I is available at Aetrix Electronics and suitable for automotive ECU designs, industrial sensor nodes, telecom line cards, and motor drive gate driver circuits requiring stable component supply with AEC-Q101 assurance and full traceability.
Supply support for SMBJ28AHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series was engineered for high-reliability transient suppression in space-constrained, high-surge environments - targeting automotive, industrial, and communications systems where consistent clamping and long-term stability are mission-critical.
FAQ
What is the maximum clamping voltage of SMBJ28AHE3_B/I under standard surge conditions?
The SMBJ28AHE3_B/I clamps to a maximum of 45.4 V when subjected to a 10/1000 µs transient waveform at its rated peak pulse current of 13.2 A. This value is measured per ANSI/IEEE C62.35 and confirmed in Vishay's datasheet revision 09-Jan-2024, ensuring predictable overvoltage limiting for downstream 40 V-rated components. The SMBJ28AHE3_B/I maintains this clamping performance across its full operating temperature range.
Is SMBJ28AHE3_B/I qualified for automotive applications?
Yes, SMBJ28AHE3_B/I is AEC-Q101 qualified, as explicitly stated in the Vishay ordering information table and mechanical data section. This qualification covers stress tests including high-temperature reverse bias, temperature cycling, and ESD - validating its suitability for under-hood and chassis-mounted automotive electronics. The "HE3" suffix denotes RoHS-compliant and AEC-Q101 qualified construction, making SMBJ28AHE3_B/I appropriate for engine control units and ADAS modules.
How does the SMBJ28AHE3_B/I differ from bidirectional variants like SMBJ28CA?
The SMBJ28AHE3_B/I is unidirectional, meaning it conducts only in reverse bias above its breakdown voltage and blocks forward current beyond ~3.5 V. In contrast, SMBJ28CA is bidirectional with symmetrical clamping in both polarities - used where AC signals or reversible voltage transients require protection. The SMBJ28AHE3_B/I has a cathode band marking and is optimized for DC rail protection, whereas SMBJ28CA lacks polarity marking and supports differential line protection such as RS-485 bus lines.
What is the thermal resistance and power derating behavior of SMBJ28AHE3_B/I?
SMBJ28AHE3_B/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on minimum recommended pad layout, and junction-to-lead resistance (RθJL) of 20 °C/W. Its 5.0 W steady-state power dissipation is rated at TA = 50 °C and must be linearly derated above that temperature - dropping to zero at 150 °C junction temperature. Derating curves are provided in Figure 2 of the Vishay datasheet 88392.
Can SMBJ28AHE3_B/I be used in place of SMBJ24AHE3_B/I in an existing design?
Substituting SMBJ28AHE3_B/I for SMBJ24AHE3_B/I is feasible only if the protected circuit's maximum normal operating voltage is ≤28 V and transient clamping margin remains sufficient - since VWM increases from 24 V to 28 V and VC rises from 38.9 V to 45.4 V. Engineers must verify that the higher clamping voltage does not exceed the absolute maximum rating of downstream components. The SMBJ28AHE3_B/I shares identical SMB package, pinout, and thermal profile, enabling drop-in replacement where voltage margins allow.
SMBJ28AHE3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 28V
- Voltage - Breakdown (Min):
- 31.1V
- Voltage - Clamping (Max) @ Ipp:
- 45.4V
- Current - Peak Pulse (10/1000µs):
- 13.2A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ28AHE3_B/I FAQ
1.How can I place an order for SMBJ28AHE3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ28AHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ28AHE3_B/I reliable?
The price and inventory of SMBJ28AHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ28AHE3_B/I is usually 5 days.
3.What payment methods are accepted for SMBJ28AHE3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ28AHE3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ28AHE3_B/I?
SMBJ28AHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ28AHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ28AHE3_B/I?
For technical support, including SMBJ28AHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ28AHE3_B/I requirements.
6.How does Aetrix verify that SMBJ28AHE3_B/I is sourced from the original manufacturer or authorized distributors?
All SMBJ28AHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ28AHE3_B/I meets industry standards.
7.What is the process for return or replacement of SMBJ28AHE3_B/I?
All SMBJ28AHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ28AHE3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ28AHE3_B/I part is unused and in its original packaging.
Return procedure for SMBJ28AHE3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ28AHE3_B/I Tags

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Toshiba Semiconductor and Storage

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