My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMBJ36AHE3_B/H
- Part No.:
- SMBJ36AHE3_B/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ36AHE3_B/H.pdf
- Description:
- 600W,36V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:
- Shipping:
Inventory:9,972
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ36AHE3_B/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 36 V stand-off voltage (VWM), 40.0–44.2 V breakdown voltage (VBR) at 1.0 mA, 58.1 V maximum clamping voltage (VC) at 10.3 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - deployed in automotive power supply inputs, industrial sensor interfaces, and telecom line protection.
For engineers reviewing the SMBJ36AHE3_B/H datasheet, SMBJ36AHE3_B/H pinout, SMBJ36AHE3_B/H application, or SMBJ36AHE3_B/H equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification status, clamping performance under 10.3 A surge, thermal resistance (RθJA = 100 °C/W), and compatibility with automated SMT placement on standard PCB pad layouts.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: when reverse voltage exceeds VWM = 36 V, it avalanches into low-impedance conduction to divert transient energy away from downstream ICs or MOSFETs. Its glass-passivated junction ensures stable breakdown characteristics and long-term reliability under repetitive surge stress.
The device is rated for 100 A non-repetitive forward surge current (IFSM), supports operating junction temperatures from –55 °C to +150 °C, and meets J-STD-020 MSL Level 1 with 260 °C reflow peak - confirming suitability for high-volume, lead-free manufacturing without moisture sensitivity concerns.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 36 V - maximum continuous reverse operating voltage before clamping begins; defines safe DC rail margin for 36 V nominal systems. |
| VBR (min/max) | 40.0 V / 44.2 V at IT = 1.0 mA - precise breakdown threshold ensures predictable turn-on timing during transients. |
| VC @ IPPM | 58.1 V at 10.3 A - clamping voltage limits protected circuit stress during worst-case 600 W surge events. |
| PPPM | 600 W - peak pulse power handling with 10/1000 µs waveform; validates protection against lightning-induced surges and inductive switching spikes. |
| IPPM | 10.3 A - maximum non-repetitive peak pulse current; determines minimum series impedance required for effective current limiting. |
| TJ max. | +150 °C - enables operation in under-hood automotive environments and high-ambient industrial enclosures. |
| RθJA | 100 °C/W - thermal resistance informs heatsinking requirements; no external heatsink needed for short-duration pulses on standard 5 mm × 5 mm copper pads. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile plastic case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode indicated by band marking on body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry (reverse-biased during protection) | Connected to system ground or low-side reference; forms return path for clamped surge current. |
| Cathode | Reverse voltage sensing node | Connected to protected line (e.g., 36 V rail); avalanche conduction initiates here when VWM exceeded. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing - suitable for engine control units and ADAS power supplies. |
| 600 W peak pulse power (10/1000 µs) | Withstands high-energy transients common in 12 V/24 V vehicle electrical systems without degradation. |
| Glass passivated junction | Ensures stable VBR tolerance and low leakage (<1.0 µA at VWM) across lifetime and temperature extremes. |
| MSL Level 1, 260 °C peak reflow | Enables single-pass lead-free reflow assembly without baking or special handling protocols. |
| Low incremental surge resistance | Minimizes VC overshoot during fast-rising transients, improving protection margin for sensitive 3.3 V or 5 V logic downstream. |
Applications
| Automotive Power Input Protection | Industrial Sensor Signal Line Clamp |
|---|---|
|
Use Scenario: Protecting 36 V battery-fed ECUs from load dump and alternator ripple transients. IC Role / Device Role / Timing Role: Shunt-type transient suppressor placed between power rail and chassis ground, responding within <1 ns to clamp voltage excursions. Use Value: Limits rail voltage to ≤58.1 V during 10.3 A surges, preventing damage to downstream PMICs and microcontrollers rated for 40 V absolute maximum. |
Use Scenario: Safeguarding analog outputs of pressure/temperature sensors in factory automation PLC modules. IC Role / Device Role / Timing Role: Unidirectional TVS connected between sensor output line and local ground, suppressing ESD and cable discharge events. Use Value: Clamps 8 kV contact ESD pulses to <58.1 V, preserving signal integrity and avoiding latch-up in 24 V loop-powered transmitters. |
| Telecom DC Power Feeder Protection | Motor Drive Gate Driver Supply Clamp |
|
Use Scenario: Securing -48 V telecom rectifier outputs against induced surges from nearby lightning strikes. IC Role / Device Role / Timing Role: Reverse-connected TVS on negative rail (cathode to -48 V, anode to ground) to clamp positive-going transients. Use Value: Maintains system uptime by absorbing 600 W surges without failure, meeting GR-1089-CORE immunity requirements. |
Use Scenario: Shielding isolated gate driver ICs from Miller-induced voltage spikes during IGBT/MOSFET switching. IC Role / Device Role / Timing Role: Local TVS on driver VDD rail (36 V-rated supply), placed adjacent to driver IC decoupling capacitor. Use Value: Prevents false turn-on and gate oxide overstress by clamping spikes to 58.1 V, enabling reliable 20 kHz+ PWM operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ36AHM3_B/H | Halogen-free, RoHS-compliant variant with identical electrical specs and AEC-Q101 qualification. | No functional difference; selected where halogen-free material compliance is mandated (e.g., EU automotive Tier 1 programs). | Choose SMBJ36AHM3_B/H when halogen-free bill-of-materials is required; otherwise SMBJ36AHE3_B/H offers standard RoHS compliance. |
| SMAJ36AHE3/A | Lower 400 W PPPM, SMA package (smaller footprint, higher RθJA = 140 °C/W), same VWM/VC ratings. | Not recommended for sustained or high-frequency surge environments due to lower power rating and thermal derating limitations. | Select SMBJ36AHE3_B/H over SMAJ36AHE3/A when 600 W surge capability or automotive under-hood thermal conditions apply. |
Compared with SMBJ36AHM3_B/H, SMBJ36AHE3_B/H provides identical protection performance with standard RoHS compliance; versus SMAJ36AHE3/A, it delivers 50 % higher surge power headroom and superior thermal management - critical for mission-critical 36 V rail protection in automotive and industrial settings.
Availability
SMBJ36AHE3_B/H is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor interfaces, and telecom power supply protection requiring stable component supply, AEC-Q101 traceability, and consistent surge performance across production batches.
Supply support for SMBJ36AHE3_B/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, precision, and automotive qualification.
The SMBJ series is engineered for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom applications where robustness, repeatable clamping, and AEC-Q101 validation are mandatory.
FAQ
What is the clamping voltage of SMBJ36AHE3_B/H at its rated peak pulse current?
The SMBJ36AHE3_B/H has a maximum clamping voltage (VC) of 58.1 V at its rated peak pulse current (IPPM) of 10.3 A, measured with a 10/1000 µs waveform. This value defines the upper voltage limit imposed on the protected circuit during a full-power transient event and is confirmed in the Vishay datasheet Document Number 88392, page 2. The SMBJ36AHE3_B/H maintains this clamping performance across its qualified operating temperature range.
Is SMBJ36AHE3_B/H qualified for automotive applications?
Yes, SMBJ36AHE3_B/H is AEC-Q101 qualified, as explicitly stated in the Vishay ordering information table (page 3) and noted in the Mechanical Data section. This qualification covers stress tests including high-temperature reverse bias, temperature cycling, and ESD, making SMBJ36AHE3_B/H suitable for use in engine control units, body electronics, and ADAS power domains where automotive-grade reliability is required.
What does the "HE3" suffix indicate in SMBJ36AHE3_B/H?
The "HE3" suffix in SMBJ36AHE3_B/H denotes a RoHS-compliant, AEC-Q101 qualified version with standard (non-halogen-free) molding compound. Per Vishay's ordering documentation, "HE3" identifies the commercial-grade, automotive-qualified variant - distinct from "HM3" (halogen-free + AEC-Q101) and "E3" (RoHS only, non-automotive). The "_B/H" indicates packaging in 7″ tape-and-reel with 750 units per reel.
How does SMBJ36AHE3_B/H differ from bidirectional TVS diodes like SMBJ36CA?
SMBJ36AHE3_B/H is unidirectional and functions only during reverse-voltage transients on its cathode terminal, while SMBJ36CA is bidirectional and clamps voltage excursions in both polarities. The unidirectional SMBJ36AHE3_B/H offers lower leakage (<1.0 µA at VWM) and is preferred for DC power rail protection; SMBJ36CA would be used where AC-coupled or floating signal lines require symmetrical clamping, such as in RS-485 or CAN bus termination networks.
What is the thermal resistance and maximum junction temperature of SMBJ36AHE3_B/H?
SMBJ36AHE3_B/H has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2″ × 0.2″ (5.0 mm × 5.0 mm) copper pads, and a maximum operating junction temperature (TJ) of +150 °C. These values are specified in the Thermal Characteristics table (page 3) and enable reliable operation in under-hood automotive and high-ambient industrial environments without forced cooling, provided PCB layout adheres to the recommended pad dimensions.
SMBJ36AHE3_B/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 36V
- Voltage - Breakdown (Min):
- 40V
- Voltage - Clamping (Max) @ Ipp:
- 58.1V
- Current - Peak Pulse (10/1000µs):
- 10.3A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ36AHE3_B/H FAQ
1.How can I place an order for SMBJ36AHE3_B/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ36AHE3_B/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ36AHE3_B/H reliable?
The price and inventory of SMBJ36AHE3_B/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ36AHE3_B/H is usually 5 days.
3.What payment methods are accepted for SMBJ36AHE3_B/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ36AHE3_B/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ36AHE3_B/H?
SMBJ36AHE3_B/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ36AHE3_B/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ36AHE3_B/H?
For technical support, including SMBJ36AHE3_B/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ36AHE3_B/H requirements.
6.How does Aetrix verify that SMBJ36AHE3_B/H is sourced from the original manufacturer or authorized distributors?
All SMBJ36AHE3_B/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ36AHE3_B/H meets industry standards.
7.What is the process for return or replacement of SMBJ36AHE3_B/H?
All SMBJ36AHE3_B/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ36AHE3_B/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ36AHE3_B/H part is unused and in its original packaging.
Return procedure for SMBJ36AHE3_B/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ36AHE3_B/H Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
