Vishay General Semiconductor - Diodes Division SMBJ51AHM3_A/H
- Part No.:
- SMBJ51AHM3_A/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ51AHM3_A/H.pdf
- Description:
- TVS DIODE 51VWM 82.4VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ51AHM3_A/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping fast-rising voltage transients on power and signal lines. It features 51 V stand-off voltage (VWM), 600 W peak pulse power (10/1000 µs), 82.4 V maximum clamping voltage at 7.3 A peak pulse current, and operates across -55 °C to +150 °C junction temperature range - used for protecting MOSFETs, ICs, and sensor interfaces in industrial power supplies.
For engineers reviewing the SMBJ51AHM3_A/H datasheet, SMBJ51AHM3_A/H pinout, SMBJ51AHM3_A/H application, or SMBJ51AHM3_A/H equivalent, this page delivers verified electrical parameters, thermal derating behavior, AEC-Q101 qualification status, and direct replacement guidance for automotive-grade surge protection design.
Technical Context
This TVS diode uses a glass-passivated silicon junction optimized for low incremental surge resistance and sub-nanosecond response time. Its unidirectional polarity enables integration into DC-biased circuits where reverse conduction must be blocked until breakdown threshold is exceeded.
The device complies with IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT), and ISO 7637-2 (automotive transients), and is rated for 100 A non-repetitive forward surge current (8.3 ms half-sine). Thermal resistance is 100 °C/W junction-to-ambient (on 5.0 mm × 5.0 mm copper pads).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 51 V - maximum continuous reverse voltage before significant leakage; sets operating margin below clamping threshold |
| VBR (Breakdown Voltage) | 56.7–62.7 V at 1 mA - guaranteed conduction onset range; ensures reliable triggering above normal operating voltage |
| VC (Clamping Voltage) | 82.4 V at IPPM = 7.3 A - peak voltage seen by protected circuit during 10/1000 µs surge; defines worst-case stress level |
| PPPM (Peak Pulse Power) | 600 W - energy-handling capability under standardized 10/1000 µs waveform; determines survivability against lightning-induced surges |
| ID (Reverse Leakage) | 1.0 µA max at 51 V - minimal standby power loss and signal integrity impact in high-impedance circuits |
| TJ max | +150 °C - enables use in under-hood automotive environments and thermally constrained PCB layouts |
| Package | SMB (DO-214AA) - industry-standard surface-mount outline with 5.59 mm × 4.06 mm footprint and 2.20 mm height; compatible with automated pick-and-place |
Pinout & Package
Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102; polarity indicated by cathode band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential side of protected line; conducts during forward surge events (e.g., reverse battery connection) |
| Cathode | Reverse-biased clamping terminal | Connected to higher-potential side; initiates avalanche breakdown when reverse voltage exceeds VBR, shunting surge current to ground |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control units and ADAS sensors; supports PPAP documentation requirements |
| Halogen-free & RoHS-compliant | HM3 suffix denotes halogen-free molding compound meeting JEDEC J-STD-020 MSL Level 1 (260 °C peak reflow) |
| 600 W peak pulse power | Withstands 10/1000 µs transients up to 7.3 A without degradation - sufficient for ISO 7637-2 Pulse 1/2a/5a compliance |
| Low clamping ratio (VC/VBR ≈ 1.31) | Minimizes overvoltage exposure during clamping; improves system-level robustness compared to higher-ratio TVS devices |
| Fast response time (< 1 ns) | Activates before sensitive downstream components experience damaging overvoltage; critical for protecting high-speed logic and analog inputs |
Applications
| Automotive Power Distribution | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Protecting 12 V/24 V power rails in body control modules against load dump and alternator transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between supply rail and chassis ground to clamp positive-going surges above 51 V. Use Value: Limits voltage excursion to ≤82.4 V during 7.3 A surge, preventing latch-up or gate oxide damage in connected PMICs and microcontrollers. |
Use Scenario: Safeguarding analog output lines (e.g., 4–20 mA current loops) in pressure/temperature transmitters exposed to EFT noise. IC Role / Device Role / Timing Role: TVS mounted across signal and return lines to absorb repetitive 5 kHz burst transients per IEC 61000-4-4. Use Value: Sub-1 ns response ensures clamping occurs before transient propagates into op-amp input stages, preserving measurement accuracy. |
| DC-DC Converter Input Stage | Motor Drive Gate Driver Protection |
|
Use Scenario: Input-side surge suppression for isolated buck converters in factory automation PLCs. IC Role / Device Role / Timing Role: Unidirectional TVS installed upstream of input filter capacitor to divert surge energy before reaching switching FETs. Use Value: 600 W rating handles repeated 10/1000 µs pulses from nearby contactor switching without parametric shift or failure. |
Use Scenario: Clamping Miller-induced voltage spikes on high-side gate driver outputs in BLDC motor inverters. IC Role / Device Role / Timing Role: TVS placed between gate and source terminals of SiC MOSFETs to limit dv/dt-induced overshoot during turn-off. Use Value: 82.4 V clamping voltage stays below 100 V gate-source absolute maximum rating, avoiding gate oxide rupture. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ51AHE3_A/H | Same electrical specs, but RoHS-compliant (non-halogen-free) and commercial-grade only - lacks AEC-Q101 qualification | Not suitable for automotive production; acceptable for industrial control or consumer power adapters | Select SMBJ51AHE3_A/H only if AEC-Q101 is not required and halogen-free material is not mandated by end-equipment standards |
| SMCJ51A-H | Higher 1500 W PPPM rating in larger SMC (DO-214AB) package; same VWM, VBR, VC, and TJ max | Requires larger PCB area and higher mounting thermal mass; better suited for high-energy surge zones like main AC/DC input | Choose SMCJ51A-H when system-level testing reveals 600 W insufficient for worst-case lightning surge immunity per IEC 61000-4-5 |
Compared with SMBJ51AHE3_A/H, SMBJ51AHM3_A/H adds halogen-free construction and AEC-Q101 validation for automotive use; versus SMCJ51A-H, it trades 2.5× pulse power for 30 % smaller footprint and lower thermal mass - enabling placement closer to protected IC pins.
Availability
SMBJ51AHM3_A/H is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor nodes, and DC-DC converter designs requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for SMBJ51AHM3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with manufacturing and engineering centers across Americas, Asia, and Europe.
The SMBJ series was developed specifically for high-reliability transient suppression in automotive, industrial, and telecom infrastructure - emphasizing AEC-Q101 qualification, tight parameter distributions, and robust surge endurance.
FAQ
What is the maximum clamping voltage of SMBJ51AHM3_A/H at its rated peak pulse current?
The SMBJ51AHM3_A/H has a maximum clamping voltage (VC) of 82.4 V at its specified peak pulse current (IPPM) of 7.3 A under the 10/1000 µs waveform condition. This value is measured per IEC 61000-4-5 test methodology and defines the upper voltage limit imposed on protected circuitry during surge events. The SMBJ51AHM3_A/H maintains this clamping performance across its full operating temperature range.
Is SMBJ51AHM3_A/H qualified for automotive applications?
Yes, SMBJ51AHM3_A/H is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HM3" and documentation in datasheet revision 09-Jan-2024. This qualification covers stress tests including high-temperature operating life, temperature cycling, and mechanical shock - validating suitability for under-hood and chassis-mounted automotive systems. The SMBJ51AHM3_A/H meets requirements for engine control, lighting, and ADAS subsystems.
How does the halogen-free construction of SMBJ51AHM3_A/H affect its assembly process?
The SMBJ51AHM3_A/H uses halogen-free molding compound compliant with JEDEC J-STD-020 MSL Level 1, allowing peak reflow temperatures up to 260 °C without preconditioning. Its matte tin-plated leads meet J-STD-002 and JESD 22-B102 solderability standards, supporting both lead-free and SnPb processes. No special handling or baking is required prior to SMT assembly - identical to standard SMBJ51AHE3_A/H except for material composition.
What is the reverse leakage current specification for SMBJ51AHM3_A/H at its stand-off voltage?
The SMBJ51AHM3_A/H specifies a maximum reverse leakage current (ID) of 1.0 µA at its 51 V stand-off voltage (VWM) and 25 °C ambient temperature. This low leakage ensures minimal power loss in always-on circuits and avoids loading high-impedance sensor references. At elevated temperatures (e.g., 125 °C), leakage remains below 50 µA - verified in Vishay's thermal characterization data.
Can SMBJ51AHM3_A/H be used in bidirectional transient protection applications?
No, SMBJ51AHM3_A/H is a unidirectional TVS diode, indicated by the "A" suffix and cathode band marking. For bidirectional protection, Vishay offers the SMBJ51CA variant (with "CA" suffix), which provides symmetrical clamping in both polarities. Using SMBJ51AHM3_A/H in bidirectional configurations risks forward conduction during negative transients, potentially damaging downstream circuitry or failing to suppress the event.
SMBJ51AHM3_A/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 51V
- Voltage - Breakdown (Min):
- 56.7V
- Voltage - Clamping (Max) @ Ipp:
- 82.4V
- Current - Peak Pulse (10/1000µs):
- 7.3A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ51AHM3_A/H FAQ
1.How can I place an order for SMBJ51AHM3_A/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ51AHM3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ51AHM3_A/H reliable?
The price and inventory of SMBJ51AHM3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ51AHM3_A/H is usually 5 days.
3.What payment methods are accepted for SMBJ51AHM3_A/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ51AHM3_A/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ51AHM3_A/H?
SMBJ51AHM3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ51AHM3_A/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ51AHM3_A/H?
For technical support, including SMBJ51AHM3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ51AHM3_A/H requirements.
6.How does Aetrix verify that SMBJ51AHM3_A/H is sourced from the original manufacturer or authorized distributors?
All SMBJ51AHM3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ51AHM3_A/H meets industry standards.
7.What is the process for return or replacement of SMBJ51AHM3_A/H?
All SMBJ51AHM3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ51AHM3_A/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ51AHM3_A/H part is unused and in its original packaging.
Return procedure for SMBJ51AHM3_A/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ51AHM3_A/H Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated
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