Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMBJ54AHE3_B/I

Part No.:
SMBJ54AHE3_B/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSMBJ54AHE3_B/I.pdf
Description:
600W,54V 5%,UNIDIR,SMB TVS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,515

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMBJ54AHE3_B/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 54 V stand-off voltage (VWM), 60.0–66.3 V breakdown voltage (VBR) at 1 mA, 6.9 A peak pulse current (IPPM) under 10/1000 µs waveform, and 600 W peak pulse power dissipation - used to protect MOSFETs, ICs, and sensor interfaces in industrial power supplies.

For engineers reviewing the SMBJ54AHE3_B/I datasheet, SMBJ54AHE3_B/I pinout, SMBJ54AHE3_B/I application, or SMBJ54AHE3_B/I equivalent, key selection criteria include clamping voltage (87.1 V at IPPM), unidirectional polarity with cathode band marking, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), and RoHS-compliant matte tin-plated leads suitable for automated SMT placement.

Technical Context

This TVS diode operates as a fast-acting shunt protector: when reverse voltage exceeds VWM = 54 V, it enters avalanche breakdown to clamp transient energy within nanoseconds. Its glass-passivated junction ensures stable leakage (<1.0 µA at VWM) and low incremental surge resistance, enabling consistent clamping performance across repetitive surges.

The device is rated for 150 °C maximum junction temperature and derates linearly above 25 °C ambient per Figure 2; its 10/1000 µs waveform capability supports protection against inductive switching spikes and lightning-induced surges in DC power rails and automotive subsystems.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 54 V - maximum continuous reverse operating voltage before clamping begins
VBR (min/max) 60.0 V / 66.3 V at IT = 1 mA - guaranteed breakdown range defining turn-on threshold
VC @ IPPM 87.1 V - clamped voltage during 6.9 A 10/1000 µs transient, limiting stress on downstream components
PPPM 600 W - peak pulse power handling capacity under standard surge waveform
IPPM 6.9 A - maximum non-repetitive surge current the device safely conducts without failure
RθJA 100 °C/W - thermal resistance from junction to ambient on standard 0.2" × 0.2" copper pads
TJ max. 150 °C - maximum allowable junction temperature for reliable long-term operation

Pinout & Package

Package: SMB (DO-214AA), surface-mount, low-profile plastic case with matte tin-plated leads; cathode indicated by molded band on one end.

Pin/Terminal Circuit Role Design Meaning
Anode Forward conduction terminal (reverse-biased during clamping) Connected to lower-potential side of protected line; enables unidirectional clamping from cathode to anode
Cathode Avalanche clamping terminal (marked with band) Connected to higher-potential side (e.g., VIN rail); conducts surge current to ground when VAK > VBR

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD robustness
600 W peak pulse power Handles high-energy transients from inductive load switching without degradation
87.1 V clamping voltage at 6.9 A Provides defined overvoltage ceiling to prevent damage to 60 V-rated downstream ICs or MOSFETs
MSL Level 1 (260 °C peak reflow) Compatible with standard lead-free SMT assembly processes without moisture sensitivity concerns
Glass-passivated junction Ensures stable VBR tolerance and low leakage (<1.0 µA) across temperature and lifetime

Applications

Industrial Power Supply Protection Automotive Body Control Module (BCM)

Use Scenario: Protecting 48 V DC input stage of programmable logic controllers (PLCs) against load dump and relay coil flyback.

IC Role / Device Role / Timing Role: Unidirectional shunt TVS placed between VIN and GND to clamp positive-going transients before they reach DC-DC controller ICs.

Use Value: Limits voltage excursion to ≤87.1 V during 6.9 A surges, preserving 60 V input-rated buck converters and gate drivers.

Use Scenario: Safeguarding LIN bus transceivers and microcontroller I/O pins in BCMs exposed to battery voltage spikes.

IC Role / Device Role / Timing Role: Standoff-rated TVS on 12 V supply rail, triggered only during >54 V events such as jump-start transients.

Use Value: Prevents latch-up or oxide breakdown in 5 V/3.3 V logic domains by clamping before downstream LDOs saturate.

Telecom DC Feeder Line Protection Motor Drive Gate Driver Protection

Use Scenario: Shielding PoE-powered Ethernet switch ports from induced surges on 48 V DC feeder lines.

IC Role / Device Role / Timing Role: Primary-level TVS on midspan injector output, absorbing common-mode surges before isolation transformers.

Use Value: Withstands 600 W pulses while maintaining <1.0 µA leakage at 54 V, ensuring minimal standby power loss.

Use Scenario: Protecting high-side N-channel MOSFET gate drivers in BLDC inverters from Miller-induced voltage spikes.

IC Role / Device Role / Timing Role: Clamping diode across gate-source terminals to suppress dv/dt-induced false turn-on during switching transitions.

Use Value: Fast response (<1 ns) and low clamping voltage (87.1 V) prevent gate oxide overstress in 60 V-rated drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ54AHM3_B/I Halogen-free, RoHS-compliant, AEC-Q101 qualified - identical electrical specs but different material composition No functional difference; selected where halogen-free compliance is mandated (e.g., EU automotive Tier 1 requirements) Choose SMBJ54AHM3_B/I when halogen-free materials are required; otherwise SMBJ54AHE3_B/I offers standard RoHS compliance.
SMBJ54A-E3/5B Same electrical specs, commercial grade (non-AEC-Q101), packaged in 13" tape-and-reel (3200 pcs) with base P/N-E3 suffix Not qualified for automotive use; suitable for industrial/commercial designs with less stringent reliability validation needs Select SMBJ54A-E3/5B for cost-sensitive non-automotive applications where AEC-Q101 is not required.

Compared with SMBJ54AHM3_B/I and SMBJ54A-E3/5B, the SMBJ54AHE3_B/I provides AEC-Q101 qualification and standard RoHS compliance in 13" tape-and-reel packaging - making it optimal for automotive and high-reliability industrial designs requiring traceable, validated surge protection without halogen restrictions.

Availability

SMBJ54AHE3_B/I is available at Aetrix Electronics and suitable for industrial power supplies, automotive body control modules, telecom DC feeder lines, and motor drive gate driver circuits requiring stable component supply with full AEC-Q101 traceability and RoHS compliance.

Supply support for SMBJ54AHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.

The SMBJ series is engineered for robust transient suppression in harsh environments - targeting automotive, industrial, and telecom systems where precise clamping, high surge immunity, and long-term stability are critical.

FAQ

What is the clamping voltage of SMBJ54AHE3_B/I at its rated peak pulse current?

The SMBJ54AHE3_B/I has a maximum clamping voltage (VC) of 87.1 V when subjected to its rated peak pulse current (IPPM) of 6.9 A under the standard 10/1000 µs waveform. This value is measured at TA = 25 °C and defines the upper voltage limit imposed on protected circuitry during surge events - critical for ensuring compatibility with 60 V-rated downstream components. The SMBJ54AHE3_B/I maintains this clamping performance across its specified operating temperature range.

Is SMBJ54AHE3_B/I qualified for automotive applications?

Yes, SMBJ54AHE3_B/I is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HE3" and documentation in the SMBJ5.0A–SMBJ188A datasheet (Document Number: 88392, Revision: 09-Jan-2024). This qualification covers stress tests including temperature cycling, highly accelerated life testing (HALT), and ESD robustness - validating SMBJ54AHE3_B/I for use in automotive subsystems such as body control modules, infotainment power rails, and ADAS sensor interfaces.

What does the "_B/I" suffix mean in SMBJ54AHE3_B/I?

The "_B/I" suffix in SMBJ54AHE3_B/I indicates two attributes: "B" denotes the revision level (Revision B per Vishay's internal coding), and "I" specifies the packaging format - 13-inch diameter plastic tape-and-reel containing 3200 units. This matches the ordering information table in the official datasheet, where "I" corresponds to the preferred package code for high-volume SMT assembly. The SMBJ54AHE3_B/I is RoHS-compliant and AEC-Q101 qualified.

How does SMBJ54AHE3_B/I differ from bidirectional variants like SMBJ54CA?

SMBJ54AHE3_B/I is unidirectional, with polarity marked by a cathode band and intended for DC line protection where surge direction is known (e.g., VIN-to-GND). In contrast, SMBJ54CA is bidirectional, offering symmetrical clamping for AC or floating lines - but with higher leakage and no cathode marking. The SMBJ54AHE3_B/I exhibits lower reverse leakage (<1.0 µA at 54 V) and is optimized for single-polarity protection in automotive and industrial DC systems.

What is the thermal resistance of SMBJ54AHE3_B/I, and how does it affect PCB layout?

The SMBJ54AHE3_B/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on minimum recommended 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value assumes standard FR-4 board construction; increasing pad area or adding thermal vias reduces RθJA, improving surge endurance. For sustained surge duty cycles or elevated ambient temperatures, PCB layout must allocate adequate copper to maintain TJ ≤ 150 °C - a key design constraint for reliable SMBJ54AHE3_B/I operation.

SMBJ54AHE3_B/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
54V
Voltage - Breakdown (Min):
60V
Voltage - Clamping (Max) @ Ipp:
87.1V
Current - Peak Pulse (10/1000µs):
6.9A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
Telecom
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMB)

SMBJ54AHE3_B/I FAQ

1.How can I place an order for SMBJ54AHE3_B/I through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBJ54AHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBJ54AHE3_B/I reliable?

The price and inventory of SMBJ54AHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ54AHE3_B/I is usually 5 days.

3.What payment methods are accepted for SMBJ54AHE3_B/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ54AHE3_B/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBJ54AHE3_B/I?

SMBJ54AHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBJ54AHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBJ54AHE3_B/I?

For technical support, including SMBJ54AHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ54AHE3_B/I requirements.

6.How does Aetrix verify that SMBJ54AHE3_B/I is sourced from the original manufacturer or authorized distributors?

All SMBJ54AHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ54AHE3_B/I meets industry standards.

7.What is the process for return or replacement of SMBJ54AHE3_B/I?

All SMBJ54AHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ54AHE3_B/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBJ54AHE3_B/I part is unused and in its original packaging.

Return procedure for SMBJ54AHE3_B/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBJ54AHE3_B/I Tags

  • SMBJ54AHE3_B/I
  • SMBJ54AHE3_B/I PDF
  • SMBJ54AHE3_B/I Datasheet
  • SMBJ54AHE3_B/I Specifications
  • SMBJ54AHE3_B/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMBJ54AHE3_B/I
  • Buy SMBJ54AHE3_B/I
  • SMBJ54AHE3_B/I Price
  • SMBJ54AHE3_B/I Distributor
  • SMBJ54AHE3_B/I Supplier
  • SMBJ54AHE3_B/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER