Vishay General Semiconductor - Diodes Division SMBJ60HE3/5B
- Part No.:
- SMBJ60HE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ60HE3/5B.pdf
- Description:
- TVS DIODE 60VWM 107VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ60HE3/5B from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features 60 V standoff voltage (VWM), 66.7–73.7 V breakdown range (VBR at 1 mA), 96.8 V maximum clamping voltage (VC) at 6.2 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - deployed in automotive ECUs, industrial I/O modules, and telecom power supplies.
For engineers reviewing the SMBJ60HE3/5B datasheet, SMBJ60HE3/5B pinout, SMBJ60HE3/5B application, or SMBJ60HE3/5B equivalent, key selection criteria include its AEC-Q101 qualification, low clamping ratio (VC/VBR ≈ 1.45), 1.0 µA max reverse leakage at VWM, and compatibility with automated SMT placement on standard PCB pad layouts per JEDEC DO-214AA footprint.
Technical Context
This unidirectional TVS operates as a voltage-clamped shunt protector: under normal bias it presents high impedance (<1.0 µA leakage at 60 V), but triggers avalanche conduction when transient voltage exceeds VBR, limiting downstream voltage to ≤96.8 V at 6.2 A. Its glass-passivated junction ensures stable breakdown characteristics and fast response time (<1.0 ns).
Thermal design relies on RθJA = 100 °C/W (typ.) and RθJL = 20 °C/W (typ.), requiring minimum 5.0 mm × 5.0 mm copper pads per terminal for full 600 W pulse handling. The HE3 suffix confirms RoHS-compliant construction with AEC-Q101 qualification for automotive-grade reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 60 V - maximum continuous reverse operating voltage before significant leakage; defines safe DC rail protection threshold. |
| VBR (min/max) | 66.7 V / 73.7 V at 1 mA - guaranteed avalanche initiation range; ensures consistent turn-on across temperature and unit variation. |
| VC @ IPPM | 96.8 V at 6.2 A - clamped voltage during 10/1000 µs surge; determines worst-case stress on protected ICs or MOSFETs. |
| PPPM | 600 W - peak pulse power handling capability; enables suppression of high-energy transients like ISO 7637-2 Pulse 1/2a/5a. |
| IPPM | 6.2 A - derived peak surge current for 10/1000 µs waveform; used to size PCB trace width and verify clamp margin. |
| RθJA | 100 °C/W - junction-to-ambient thermal resistance; requires ≥5.0 mm × 5.0 mm copper pads per lead for rated power dissipation. |
| TJ max | +150 °C - maximum junction temperature; supports operation in under-hood automotive environments and industrial enclosures. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile plastic case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode indicated by band marking on cathode end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point during forward conduction; connected to protected circuit ground or low-side return path. | Provides reference node for clamping; must be routed with low-inductance path to local ground plane. |
| Cathode | Current exit point during reverse-biased avalanche; connected to line being protected (e.g., +12 V rail). | Carries full surge current; requires direct connection to protected net with minimal trace length to reduce inductive overshoot. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control, body electronics, and ADAS sensors - meets stress test requirements for temperature cycling, HTRB, and ESD. |
| 600 W peak pulse power (10/1000 µs) | Handles high-energy transients such as load dump (ISO 16750-2) and inductive switching spikes without degradation. |
| Clamping voltage ≤96.8 V at 6.2 A | Ensures protected 60 V-rated components (e.g., CAN transceivers, microcontrollers) remain within absolute maximum ratings during surge events. |
| Low leakage: ≤1.0 µA at 60 V | Minimizes standby power loss and avoids false triggering in battery-powered or energy-sensitive systems. |
| MSL Level 1 (260 °C peak reflow) | Compatible with standard lead-free SMT reflow profiles without moisture sensitivity concerns or baking requirements. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Protecting 12 V/24 V supply inputs in engine control units against load dump and alternator ripple. IC Role / Device Role / Timing Role: Shunt-type transient suppressor placed directly at connector entry point before DC/DC converter input. Use Value: Limits voltage excursion to ≤96.8 V during ISO 16750-2 Pulse 5a (load dump), preventing damage to upstream regulators and MCU power domains. |
Use Scenario: Safeguarding analog sensor outputs (e.g., pressure, temperature) in factory automation PLC modules from ESD and cable discharge. IC Role / Device Role / Timing Role: Low-capacitance TVS placed adjacent to connector pins to divert fast transients before reaching op-amp input stages. Use Value: Maintains signal integrity with <1.0 µA leakage at 60 V and sub-ns response, avoiding baseline shift or saturation in precision measurement paths. |
| Telecom DC Power Input Protection | Consumer Device USB/DC Jack Protection |
|
Use Scenario: Securing -48 V or +57 V DC inputs in telecom base station power distribution boards from lightning-induced surges. IC Role / Device Role / Timing Role: Primary-level TVS mounted at board edge, coordinated with secondary GDT or MOV for staged protection. Use Value: Delivers 600 W pulse handling with 96.8 V clamping to keep downstream DC/DC converters and PMICs within safe operating area during Category A/B surges. |
Use Scenario: Hardening 5 V/9 V/12 V DC input jacks in smart home hubs and portable audio devices against user-handling ESD and adapter plug-in spikes. IC Role / Device Role / Timing Role: Unidirectional shunt device placed between input rail and chassis ground, sized for IEC 61000-4-2 Level 4 (±8 kV contact). Use Value: Achieves reliable clamping with 66.7–73.7 V VBR and 1.0 µA leakage, enabling compact layout without compromising standby current budget. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ60A-E3/5B | Commercial-grade version; lacks AEC-Q101 qualification and has higher MSL level (not specified as MSL 1). | Approved for industrial and consumer use only; not suitable for automotive production or under-hood deployment. | Select when cost sensitivity outweighs automotive qualification requirements and thermal profile allows non-MSL-1 handling. |
| SMAJ60AHE3/A | Smaller SMA (DO-214AC) package; same electrical specs but lower 400 W PPPM rating and higher RθJA (150 °C/W). | Limited to lower-energy transients; requires tighter thermal management and cannot replace SMBJ60HE3/5B in 600 W surge scenarios. | Choose only for space-constrained designs where surge threat level is reduced (e.g., secondary-side protection) and layout permits enhanced cooling. |
Compared with SMBJ60A-E3/5B and SMAJ60AHE3/A, SMBJ60HE3/5B uniquely combines AEC-Q101 qualification, MSL Level 1 reflow compatibility, and full 600 W pulse rating in the SMB footprint - making it the sole option for automotive front-end power protection requiring zero derating under JEDEC thermal conditions.
Availability
SMBJ60HE3/5B is available at Aetrix Electronics and suitable for automotive electronic control units, industrial programmable logic controllers, and telecom power supply designs requiring stable component supply with long-term lifecycle assurance.
Supply support for SMBJ60HE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, efficiency, and application-specific performance.
The SMBJ series is engineered for high-reliability transient suppression in harsh environments - targeting automotive, industrial, and telecom infrastructure where robustness against ESD, EFT, and surge events is mission-critical.
FAQ
What is the clamping voltage of SMBJ60HE3/5B at its rated peak pulse current?
The SMBJ60HE3/5B has a maximum clamping voltage (VC) of 96.8 V at 6.2 A peak pulse current (IPPM) under the standard 10/1000 µs waveform. This value is measured per ANSI/IEEE C62.35 and defines the upper voltage limit imposed on protected circuits during surge events. Designers use this parameter to verify that downstream components remain within their absolute maximum voltage ratings when SMBJ60HE3/5B is active.
Is SMBJ60HE3/5B suitable for automotive applications?
Yes, SMBJ60HE3/5B is AEC-Q101 qualified and explicitly designated for automotive use via the "HE3" suffix. It undergoes rigorous stress testing including temperature cycling, highly accelerated life testing (HALT), and ESD validation per automotive standards. Its 150 °C maximum junction temperature and MSL Level 1 reflow compatibility make SMBJ60HE3/5B appropriate for engine control modules, body control units, and ADAS sensor interfaces where reliability under thermal and mechanical stress is mandatory.
How does the breakdown voltage range of SMBJ60HE3/5B affect circuit protection design?
The SMBJ60HE3/5B specifies a breakdown voltage (VBR) range of 66.7 V to 73.7 V at 1 mA test current. This tolerance ensures consistent avalanche initiation across manufacturing lots and temperature extremes. Designers select this part when protecting 60 V nominal rails because the minimum VBR provides margin above VWM (60 V) to avoid premature conduction, while the maximum VBR guarantees clamping begins before damaging overvoltage occurs - a critical balance reflected in SMBJ60HE3/5B's 1.45 clamping ratio (VC/VBR(min)).
What is the thermal resistance specification for SMBJ60HE3/5B, and how does it impact PCB layout?
SMBJ60HE3/5B has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. To achieve full 600 W pulse rating, PCB layout must allocate these minimum pad dimensions with internal or external copper planes connected via multiple thermal vias. Failure to meet this requirement results in junction temperature exceeding 150 °C during surge events, risking parametric shift or catastrophic failure of SMBJ60HE3/5B.
Does SMBJ60HE3/5B have polarity markings, and how is it oriented on the PCB?
Yes, SMBJ60HE3/5B is unidirectional and marked with a cathode band on the package body. During PCB layout, the banded end must connect to the line being protected (e.g., +60 V rail), while the anode connects to system ground. This orientation ensures the device remains reverse-biased under normal operation and conducts only during overvoltage events - incorrect placement renders SMBJ60HE3/5B ineffective and may cause short-circuit failure during surge conditions.
SMBJ60HE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 60V
- Voltage - Breakdown (Min):
- 66.7V
- Voltage - Clamping (Max) @ Ipp:
- 107V
- Current - Peak Pulse (10/1000µs):
- 5.6A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ60HE3/5B FAQ
1.How can I place an order for SMBJ60HE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ60HE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ60HE3/5B reliable?
The price and inventory of SMBJ60HE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ60HE3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ60HE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ60HE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ60HE3/5B?
SMBJ60HE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ60HE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ60HE3/5B?
For technical support, including SMBJ60HE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ60HE3/5B requirements.
6.How does Aetrix verify that SMBJ60HE3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ60HE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ60HE3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ60HE3/5B?
All SMBJ60HE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ60HE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ60HE3/5B part is unused and in its original packaging.
Return procedure for SMBJ60HE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ60HE3/5B Tags

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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