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Vishay General Semiconductor - Diodes Division SMBJ75D-M3/I
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- Part No.:
- SMBJ75D-M3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ75D-M3/I.pdf
- Description:
- TVS DIODE 75VWM 119VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:2,629
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Product details
Overview
SMBJ75D-M3/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 75 V stand-off voltage (VWM), 84.6–90.8 V breakdown voltage (VBR) at 1.0 mA test current, 119 V maximum clamping voltage (VC) at 5.06 A peak pulse current (IPPM), and 600 W peak pulse power rating with 10/1000 μs waveform - deployed in industrial sensor interfaces and MOSFET gate protection circuits.
For engineers reviewing the SMBJ75D-M3/I datasheet, SMBJ75D-M3/I pinout, SMBJ75D-M3/I application, or SMBJ75D-M3/I equivalent, key selection criteria include clamping performance under 5.06 A surge, thermal resistance (RθJA = 125 °C/W on minimum pad), unidirectional polarity with cathode band marking, and M3 suffix compliance (halogen-free, RoHS, JESD 201 Class 2 whisker resistance).
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: when reverse voltage exceeds VBR, it avalanches to divert transient energy away from downstream components. Its low incremental surge resistance ensures minimal voltage overshoot during fast transients, while tight ±3.5 % VBR tolerance (84.6–90.8 V) enables precise coordination with system overvoltage thresholds.
Designed for 10/1000 μs surge waveforms at 0.01 % duty cycle, SMBJ75D-M3/I sustains 600 W peak pulse power and clamps to ≤119 V at 5.06 A. With TJ max = 150 °C and RθJM = 20 °C/W, it supports reliable operation on standard PCB copper pads without forced cooling in ambient temperatures up to +125 °C after derating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 75 V - maximum continuous reverse operating voltage before significant leakage; sets upper limit for protected line's normal DC operating range |
| VBR (Breakdown Voltage) | 84.6–90.8 V at 1.0 mA - precise avalanche initiation window enabling predictable turn-on margin above VWM |
| VC (Clamping Voltage) | 119 V at IPPM = 5.06 A - maximum voltage seen by protected circuit during 10/1000 μs surge; defines worst-case stress on downstream ICs |
| PPPM (Peak Pulse Power) | 600 W - surge energy handling capability per single 10/1000 μs event; validates suitability for IEC 61000-4-5 Level 3/4 threats |
| ID (Reverse Leakage) | ≤0.5 μA at VWM - negligible standby power loss and signal integrity impact on high-impedance nodes |
| RθJA | 125 °C/W - thermal resistance from junction to ambient on minimum recommended pad layout; determines safe power dissipation limits in real PCBs |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, halogen-free, RoHS-compliant, M3 grade (JESD 201 Class 2 whisker resistant), matte tin-plated leads. Cathode indicated by molded band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side connection point | Connected to ground or lowest potential node; completes shunt path during avalanche conduction |
| Cathode | High-side connection point | Connected to protected line; polarity marking (band) ensures correct orientation to block normal VWM and clamp surges |
Key Features
| Feature | Design Value |
|---|---|
| ±3.5 % VBR tolerance | Enables accurate coordination with 75 V system rails and eliminates need for design margin stacking |
| 600 W peak pulse power (10/1000 μs) | Validates protection against severe lightning-induced surges per IEC 61000-4-5 Ed. 3 |
| Low 0.5 μA leakage at VWM | Maintains signal integrity and battery life in always-on sensor and telemetry applications |
| MSL Level 1 (260 °C peak reflow) | Supports standard lead-free SMT assembly without moisture sensitivity concerns |
| M3 suffix compliance | Guarantees halogen-free materials, RoHS conformance, and whisker-resistant terminations for industrial reliability |
Applications
| Industrial Sensor Interface Protection | MOSFET Gate Drive Line Protection |
|---|---|
Use Scenario: Protecting 24 V analog input channels in PLC modules from inductive switching transients generated by solenoid valves and contactors. IC Role / Device Role / Timing Role: Unidirectional shunt TVS placed between signal line and ground, clamping surges before they reach precision ADC front-end. Use Value: Limits transient voltage to ≤119 V, preventing latch-up or damage to 3.3 V or 5 V interface ICs while maintaining <0.5 μA leakage during normal operation. |
Use Scenario: Safeguarding N-channel MOSFET gate terminals in motor drive half-bridges exposed to Miller-induced voltage spikes during high dV/dt switching. IC Role / Device Role / Timing Role: Clamping device connected from gate to source, suppressing positive-going spikes that could exceed VGS(max) ratings. Use Value: Fast response (<1 ns) and low clamping voltage ensure gate oxide remains within safe operating area even under repetitive 5.06 A surge events. |
| Telecom DC Power Rail Protection | Automotive Body Control Module (BCM) Inputs |
Use Scenario: Guarding +48 V telecom power distribution boards against load dump and hot-swap transients in central office equipment. IC Role / Device Role / Timing Role: Primary overvoltage clamp on main DC bus, coordinated with upstream fuses and secondary TVS arrays. Use Value: 600 W PPPM rating and 125 °C/W RθJA allow sustained protection without thermal runaway on standard FR4 layouts. |
Use Scenario: Protecting LIN bus inputs and switch sense pins in automotive BCMs subjected to ISO 7637-2 Pulse 1/2a/3a transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed at connector entry point, referenced to chassis ground to absorb negative-going spikes. Use Value: Tight VBR tolerance and 119 V VC ensure compatibility with 12 V nominal systems while meeting OEM surge immunity requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ75A-M3/I | Bidirectional variant; symmetric VBR (84.6–90.8 V) and VC (119 V) in both polarities; no cathode band marking | Required where AC-coupled or dual-polarity signal lines (e.g., RS-485, CAN) need protection without polarity constraints | Select SMBJ75A-M3/I only if bidirectional clamping is explicitly required; SMBJ75D-M3/I is optimal for DC rail or unidirectional signal protection. |
| SMCJ75A-M3/I | Larger SMC (DO-214AB) package; same VWM/VBR/VC specs but higher 1500 W PPPM rating and lower RθJA (60 °C/W) | Suitable for higher-energy surge environments (e.g., outdoor power supplies) where board space permits larger footprint | Choose SMCJ75A-M3/I when surge threat level exceeds 600 W or thermal management requires lower junction-to-ambient resistance. |
Compared with SMBJ75D-M3/I, SMBJ75A-M3/I offers polarity-agnostic clamping at identical electrical specs but sacrifices unidirectional optimization, while SMCJ75A-M3/I delivers superior power handling and thermal performance in a larger footprint - neither is pin-compatible, and both require layout revision.
Availability
SMBJ75D-M3/I is available at Aetrix Electronics and suitable for industrial sensor interfaces, MOSFET gate protection, and telecom DC power rail applications requiring stable component supply, long-term lifecycle support, and consistent M3-grade material compliance.
Supply support for SMBJ75D-M3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and power MOSFETs with emphasis on reliability, efficiency, and application-specific performance.
The SMBJ series was engineered for high-reliability transient suppression in space-constrained surface-mount designs, targeting industrial automation, telecom infrastructure, and automotive electronics where precise clamping and robust surge immunity are critical.
FAQ
What is the clamping voltage of SMBJ75D-M3/I at its rated peak pulse current?
The SMBJ75D-M3/I has a maximum clamping voltage (VC) of 119 V at its specified peak pulse current (IPPM) of 5.06 A under a 10/1000 μs waveform. This value is measured per ANSI/IEEE C62.35 standards and represents the highest voltage the protected circuit will experience during a full-rated surge event. The SMBJ75D-M3/I maintains this clamping performance across its qualified temperature range.
Is SMBJ75D-M3/I suitable for protecting 24 V DC power supplies?
Yes, SMBJ75D-M3/I is well-suited for 24 V DC supply protection: its 75 V stand-off voltage (VWM) provides ample margin above 24 V nominal, while its 84.6–90.8 V breakdown range ensures reliable activation only during overvoltage events. The 119 V clamping voltage limits stress on downstream regulators and controllers, and its 600 W PPPM rating handles common inductive-switching transients found in industrial 24 V systems.
Does SMBJ75D-M3/I have a bidirectional version?
Yes - the bidirectional counterpart is SMBJ75A-M3/I (with 'A' suffix instead of 'D'). While SMBJ75D-M3/I is unidirectional and marked with a cathode band, SMBJ75A-M3/I provides symmetrical clamping in both directions and omits the polarity band. Both share identical VWM, VBR, VC, and PPPM ratings, but differ in polarity behavior and marking; they are not interchangeable without circuit review.
What does the 'M3' suffix mean in SMBJ75D-M3/I?
The 'M3' suffix in SMBJ75D-M3/I denotes Vishay's industrial-grade qualification: halogen-free molding compound, full RoHS compliance, and passing JESD 201 Class 2 whisker resistance testing. It also confirms matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. The 'I' indicates 13" tape-and-reel packaging (3200 units per reel), distinguishing it from 'H' (7" reel, 750 units).
How does SMBJ75D-M3/I perform thermally on a standard PCB?
SMBJ75D-M3/I exhibits a typical junction-to-ambient thermal resistance (RθJA) of 125 °C/W when mounted on the minimum recommended pad layout per Vishay's datasheet. This means a 1 W steady-state power dissipation would raise junction temperature by ~125 °C above ambient - underscoring why it is rated for pulsed operation only. For continuous use, derating per Figure 5 is mandatory; its 150 °C max junction temperature allows operation up to +125 °C ambient with appropriate derating.
SMBJ75D-M3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 75V
- Voltage - Breakdown (Min):
- 84.6V
- Voltage - Clamping (Max) @ Ipp:
- 119V
- Current - Peak Pulse (10/1000µs):
- 5.06A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ75D-M3/I FAQ
1.How can I place an order for SMBJ75D-M3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ75D-M3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ75D-M3/I reliable?
The price and inventory of SMBJ75D-M3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ75D-M3/I is usually 5 days.
3.What payment methods are accepted for SMBJ75D-M3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ75D-M3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ75D-M3/I?
SMBJ75D-M3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ75D-M3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ75D-M3/I?
For technical support, including SMBJ75D-M3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ75D-M3/I requirements.
6.How does Aetrix verify that SMBJ75D-M3/I is sourced from the original manufacturer or authorized distributors?
All SMBJ75D-M3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ75D-M3/I meets industry standards.
7.What is the process for return or replacement of SMBJ75D-M3/I?
All SMBJ75D-M3/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ75D-M3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ75D-M3/I part is unused and in its original packaging.
Return procedure for SMBJ75D-M3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ75D-M3/I Tags
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Diodes Incorporated
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